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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Genehmigungsbehörde | Anzahl der Kanäle | Ausgangstyp | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Strom - Ausgang / Kanal | DatEnrate | Aufstieg / Fallzeit (Typ) | Spannung - Ausgang (max) | Spannung - Vorwärts (VF) (Typ) | Strom - DC Forward (if) (max) | Spannung - Isolation | Spannung - Staat | Strom - Auf Status (It (RMS)) (max) | Strom - Hold (ih) | Eingänge - SETE 1/SETE 2 | Transiente immunität der gemeinsamen modus (min) | Ausbreitungsverzögerung TPLH / TPHL (max) | Strom Halbertragungsverhöltnis (min) | Strom Halbertragungsverhöltnis (max) | Einschalen / Ausschalten (Typ) | VCE -Sättigung (max) | NULL -KREUZungskreis | Statischer DV/DT (min) | Strom - LED -Tigger (IFT) (max) | Zeit Drehen |
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![]() | 4n28m | 0,1800 | ![]() | 9622 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 110 ° C. | K. Loch | 0,400 ", 10,16 mm) | DC | 1 | Transistor -MIT -Basis | 6-DIP | Herunterladen | Ear99 | 8541.49.8000 | 1 | - - - | - - - | 80V | 1,2 v | 60 mA | 5000 VRMs | 10% @ 10 mA | - - - | 3 µs, 3 µs | 500mv | |||||||||||||||||||
TCDT1100G | 0,2070 | ![]() | 4853 | 0.00000000 | Vishay Semiconductor Opto Division | - - - | Rohr | Aktiv | -55 ° C ~ 110 ° C. | K. Loch | 0,400 ", 10,16 mm) | TCDT1100 | DC | 1 | Transistor | 6-DIP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 7 µs, 6,7 µs | 32V | 1,25 V. | 60 mA | 5000 VRMs | 40% @ 10 mA | - - - | 11 µs, 7 µs | 300mV | ||||||||||||||||
![]() | PS2911-1-V-F3-LA | - - - | ![]() | 8014 | 0.00000000 | Cel | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 4-smd, Flache Leitungen | DC | 1 | Transistor | 4-mini-Flat | Herunterladen | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.49.8000 | 3.500 | 40 ma | 5 µs, 10 µs | 40V | 1.1V | 50 ma | 2500 VRMs | 150% @ 1ma | 300% @ 1ma | 40 µs, 120 µs | 300mV | |||||||||||||||||
H11AA3S (TA) -V | - - - | ![]() | 5632 | 0.00000000 | Everlight Electronics Co Ltd | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd, Möwenflügel | H11AA | AC, DC | 1 | Transistor -MIT -Basis | 6-smd | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 3907171244 | Ear99 | 8541.49.8000 | 1.000 | - - - | 10 µs, 10 µs (max) | 80V | 1,2 v | 60 mA | 5000 VRMs | 50% @ 10 mA | - - - | 10 µs, 10 µs (max) | 400mV | ||||||||||||||||
![]() | MOC3043FR2M | - - - | ![]() | 6240 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | - - - | Oberflächenhalterung | 6-smd, Möwenflügel | Moc304 | - - - | 1 | Triac | 6-smd | - - - | 1 (unbegrenzt) | UnberÜHrt Ereichen | MOC3043FR2M-NDR | Ear99 | 8541.49.8000 | 1.000 | - - - | 60 mA | 7500vpk | 400 V | 400 µA (Typ) | Ja | - - - | 5ma | - - - | ||||||||||||||||
![]() | SFH601-3x019 | - - - | ![]() | 5413 | 0.00000000 | Vishay Semiconductor Opto Division | - - - | Rohr | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd, Möwenflügel | SFH601 | DC | 1 | Transistor -MIT -Basis | 6-smd | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 2 µs, 2 µs | 100V | 1,25 V. | 60 mA | 5000 VRMs | 100% @ 10ma | 200% @ 10ma | 3 µs, 2,3 µs | 400mV | |||||||||||||||
![]() | TLP632 (f) | - - - | ![]() | 9713 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Veraltet | -55 ° C ~ 100 ° C. | K. Loch | 6-DIP (0,300 ", 7,62 mm) | TLP632 | DC | 1 | Transistor | 6-DIP | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Tlp632f | Ear99 | 8541.49.8000 | 50 | 50 ma | 2 µs, 3 µs | 55 v | 1,15 V | 60 mA | 5000 VRMs | 50% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | |||||||||||||||
![]() | EL3083M | 0,9270 | ![]() | 3053 | 0.00000000 | Everlight Electronics Co Ltd | - - - | Rohr | Aktiv | -55 ° C ~ 100 ° C. | K. Loch | 0,400 ", 10,16 mm) | EL3083 | CSA, Demko, Fimko, Nemko, Semko, UL | 1 | Triac | 6-DIP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 3903830001 | Ear99 | 8541.49.8000 | 65 | 1,5 V (max) | 60 mA | 5000 VRMs | 800 V | 100 ma | 280 µA (Typ) | Ja | 600 V/µs | 5ma | - - - | |||||||||||||||
![]() | ILQ1615-4 | 3.1800 | ![]() | 4446 | 0.00000000 | Vishay Semiconductor Opto Division | - - - | Rohr | Aktiv | -55 ° C ~ 110 ° C. | K. Loch | 0,300 ", 7,62 mm) | ILQ1615 | DC | 4 | Transistor | 16-DIP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 1.000 | 50 ma | 2 µs, 2 µs | 70V | 1,15 V | 60 mA | 5300 VRMs | 160% @ 10 mA | 320% @ 10 mA | 3 µs, 2,3 µs | - - - | ||||||||||||||||
![]() | EL1110 (TB) -V | - - - | ![]() | 9082 | 0.00000000 | Everlight Electronics Co Ltd | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 6-Soic (0,295 ", 7,50 mm BreiTe), 5 Leads | EL1110 | DC | 1 | Transistor -MIT -Basis | 5-Sop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 2 µs, 3 µs | 80V | 1,5 V (max) | 60 mA | 5000 VRMs | 50% @ 5ma | 600% @ 5ma | 4 µs, 3 µs | 400mV | ||||||||||||||||
![]() | PC81710NIP | - - - | ![]() | 6979 | 0.00000000 | Scharfe Mikroelektronik | - - - | Band & Rollen (TR) | Veraltet | -30 ° C ~ 100 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | DC | 1 | Transistor | 4-smd | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 4 µs, 3 µs | 80V | 1,2 v | 10 ma | 5000 VRMs | 100% @ 500 ähm | 600% @ 500 ähm | - - - | 200mv | |||||||||||||||||
![]() | 4n30m | - - - | ![]() | 9316 | 0.00000000 | Everlight Electronics Co Ltd | - - - | Rohr | Aktiv | -55 ° C ~ 100 ° C. | K. Loch | 0,400 ", 10,16 mm) | DC | 1 | Darlington MIT Basis | 6-DIP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 65 | - - - | - - - | 55 v | 1,2 v | 60 mA | 5000 VRMs | 100% @ 10ma | - - - | 5 µs, 40 µs (max) | 1V | |||||||||||||||||
![]() | H11A3SR2VM | - - - | ![]() | 8647 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -40 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd, Möwenflügel | H11a | DC | 1 | Transistor -MIT -Basis | 6-smd | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 1.000 | - - - | - - - | 30V | 1,18 v | 60 mA | 7500vpk | 20% @ 10 mA | - - - | 2 µs, 2 µs | 400mV | ||||||||||||||||
![]() | HCPL0701V | 1.3200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 85 ° C. | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | DC | 1 | Darlington MIT Basis | 8-soic | Herunterladen | Ear99 | 8541.49.8000 | 227 | 60 mA | - - - | 18V | 1,25 V. | 20 ma | 2500 VRMs | 500% @ 1,6 mA | 2600% @ 1,6 mA | 300 ns, 1,6 µs | - - - | |||||||||||||||||||
![]() | TLP781 (BL, F) | - - - | ![]() | 4864 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Veraltet | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | TLP781 | DC | 1 | Transistor | 4-DIP | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | TLP781BLF | 5a991g | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 200% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | |||||||||||||||
![]() | 4N31SD | - - - | ![]() | 5987 | 0.00000000 | Onsemi | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd, Möwenflügel | 4n31 | DC | 1 | Darlington MIT Basis | 6-smd | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 4N31SD-NDR | Ear99 | 8541.49.8000 | 1.000 | 150 Ma | - - - | 30V | 1,2 v | 80 Ma | 5300 VRMs | 50% @ 10 mA | - - - | 5 µs, 40 µs (max) | 1,2 v | |||||||||||||||
![]() | CNY17F-2S-TA1 | 0,1260 | ![]() | 7961 | 0.00000000 | Lite-on Inc. | CNY17f | Band & Rollen (TR) | Aktiv | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd, Möwenflügel | CNY17 | DC | 1 | Transistor | 6-smd | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | CNY17F2STA1 | Ear99 | 8541.49.8000 | 1.000 | 150 Ma | 5 µs, 5 µs | 70V | 1,45 v | 60 mA | 5000 VRMs | 63% @ 10 mA | 125% @ 10 mA | - - - | 300mV | |||||||||||||||
PS2801-1-LA | - - - | ![]() | 8721 | 0.00000000 | Cel | - - - | Streiflen | Abgebrochen bei Sic | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 4-Soic (0,173 ", 4,40 mm BreiTe) | DC | 1 | Transistor | 4-SSOP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | PS28011LA | Ear99 | 8541.49.8000 | 50 | 50 ma | 3 µs, 5 µs | 80V | 1.1V | 50 ma | 2500 VRMs | 100% @ 5ma | 300% @ 5ma | 6 µs, 5 µs | 300mV | ||||||||||||||||
PS2801A-1-F3-A | - - - | ![]() | 2437 | 0.00000000 | Cel | Nepoc | Band & Rollen (TR) | Abgebrochen bei Sic | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 4-Soic (0,173 ", 4,40 mm BreiTe) | DC | 1 | Transistor | 4-SSOP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 3.500 | 30 ma | 5 µs, 7 µs | 70V | 1,2 v | 30 ma | 2500 VRMs | 50% @ 5ma | 400% @ 5ma | - - - | 300mV | |||||||||||||||||
![]() | H11l2300W | - - - | ![]() | 6499 | 0.00000000 | Onsemi | - - - | Rohr | Veraltet | - - - | K. Loch | 0,400 ", 10,16 mm) | H11l | DC | 1 | Offener Sammler | - - - | 6-DIP | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 50 | 50 ma | 1MHz | - - - | - - - | 10 ma | 5300 VRMs | 1/0 | - - - | - - - | |||||||||||||||
![]() | TLP160J (TPR, U, C, F) | - - - | ![]() | 3973 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | -40 ° C ~ 100 ° C. | Oberflächenhalterung | 6-Soic (0,173 ", 4,40 mm BreiTe), 4 Leads | TLP160J | Ur | 1 | Triac | 6-mfsop, 4 Blei | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 3.000 | 1,15 V | 50 ma | 2500 VRMs | 600 V | 70 Ma | 1 Ma (Typ) | NEIN | 500 V/µs | 10 ma | 30 µs | ||||||||||||||||
PS8352AL2-VAX | 19.6700 | ![]() | 530 | 0.00000000 | Renesas Electronics America Inc. | Nepoc | Klebeband (CT) Schneiden | Aktiv | -40 ° C ~ 110 ° C. | Oberflächenhalterung | 8-Soic (0,268 ", 6,80 mm Breit) | PS8352 | DC | 1 | Analog Zum Digitalkonverter | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 20 | - - - | 3,1 µs, 3,1 µs | - - - | - - - | 5000 VRMs | - - - | - - - | - - - | - - - | |||||||||||||||||
SFH601-3x016 | 1.5400 | ![]() | 3424 | 0.00000000 | Vishay Semiconductor Opto Division | - - - | Rohr | Aktiv | -55 ° C ~ 100 ° C. | K. Loch | 0,400 ", 10,16 mm) | SFH601 | DC | 1 | Transistor -MIT -Basis | 6-DIP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 2 µs, 2 µs | 100V | 1,25 V. | 60 mA | 5000 VRMs | 100% @ 10ma | 200% @ 10ma | 3 µs, 2,3 µs | 400mV | ||||||||||||||||
MCT2S1 (TB) | - - - | ![]() | 3616 | 0.00000000 | Everlight Electronics Co Ltd | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 6-smd, Möwenflügel | MCT2 | DC | 1 | Transistor -MIT -Basis | 6-smd | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 390717t207 | Ear99 | 8541.49.8000 | 1.000 | - - - | 3 µs, 3 µs | 80V | 1,23V | 60 mA | 5000 VRMs | 20% @ 10 mA | - - - | 3 µs, 3 µs | 400mV | ||||||||||||||||
![]() | PS2561-1-VWA | - - - | ![]() | 3890 | 0.00000000 | Renesas Electronics America Inc. | Nepoc | Rohr | Aktiv | -55 ° C ~ 100 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | PS2561 | DC | 1 | Transistor | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | 559-1268 | Ear99 | 8541.49.8000 | 100 | 50 ma | 3 µs, 5 µs | 80V | 1.17V | 80 Ma | 5000 VRMs | 130% @ 5ma | 260% @ 5ma | - - - | 300mV | |||||||||||||||
![]() | MOC3082TVM | 0,3500 | ![]() | 251 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 85 ° C. | K. Loch | 0,400 ", 10,16 mm) | Moc308 | IEC/EN/DIN, UL | 1 | Triac | 6-DIP | Herunterladen | Ear99 | 8541.49.8000 | 865 | 1,3 v | 60 mA | 4170 VRMs | 800 V | 500 µA (Typ) | Ja | 600 V/µs | 10 ma | - - - | |||||||||||||||||||
![]() | TLP9148J (OGI-TL, F) | - - - | ![]() | 5576 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Schüttgut | Veraltet | - - - | 264-TLP9148J (OGI-TLF) | Ear99 | 8541.49.8000 | 1 | |||||||||||||||||||||||||||||||||||
![]() | SFH6186-4T | 1.0200 | ![]() | 2 | 0.00000000 | Vishay Semiconductor Opto Division | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | SFH6186 | DC | 1 | Transistor | 4-smd | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 1.000 | 50 ma | 3,5 µs, 5 µs | 55 v | 1.1V | 60 mA | 5300 VRMs | 160% @ 1ma | 320% @ 1ma | 6 µs, 5,5 µs | 400mV | |||||||||||||||
![]() | PS9513L2-E3-AX | 4.3200 | ![]() | 7765 | 0.00000000 | Renesas Electronics America Inc. | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 100 ° C. | Oberflächenhalterung | 8-smd, Möwenflügel | PS9513 | DC | 1 | Offener Sammler | 4,5 V ~ 20V | 8-DIP-Möwenflügel | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 1.000 | 15 Ma | 1 mbit / s | - - - | 1,65 v | 25ma | 5000 VRMs | 1/0 | 15kV/µs | 750 ns, 500 ns | |||||||||||||||
![]() | IL2-lb | - - - | ![]() | 3689 | 0.00000000 | Vishay Semiconductor Opto Division | - - - | Schüttgut | Veraltet | - - - | - - - | - - - | IL2 | - - - | - - - | - - - | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 2.000 | - - - | - - - | - - - | - - - | - - - | - - - | - - - | - - - | - - - |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus