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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Genehmigungsbehörde | Anzahl der Kanäle | Ausgangstyp | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Strom - Ausgang / Kanal | DatEnrate | Aufstieg / Fallzeit (Typ) | Spannung - Ausgang (max) | Spannung - Vorwärts (VF) (Typ) | Strom - DC Forward (if) (max) | Spannung - Isolation | Spannung - Staat | Strom - Auf Status (It (RMS)) (max) | Strom - Hold (ih) | Eingänge - SETE 1/SETE 2 | Transiente immunität der gemeinsamen modus (min) | Ausbreitungsverzögerung TPLH / TPHL (max) | Strom Halbertragungsverhöltnis (min) | Strom Halbertragungsverhöltnis (max) | Einschalen / Ausschalten (Typ) | VCE -Sättigung (max) | NULL -KREUZungskreis | Statischer DV/DT (min) | Strom - LED -Tigger (IFT) (max) | Zeit Drehen |
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![]() | 6n138m | 0,2562 | ![]() | 7361 | 0.00000000 | Lite-on Inc. | - - - | Rohr | Aktiv | -20 ° C ~ 85 ° C. | K. Loch | 0,400 ", 10,16 mm) | 6N138 | DC | 1 | Darlington MIT Basis | 8-DIP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 100 | 50 ma | - - - | 7v | 1.1V | 20 ma | 5000 VRMs | 300% @ 1,6 mA | 2600% @ 1,6 mA | 1,6 µs, 10 µs | - - - | ||||||||||||||||
![]() | TLP291 (gr-tp, e) | - - - | ![]() | 7257 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 4-soic (0,179 ", 4,55 mm BreiTe) | TLP291 | DC | 1 | Transistor | 4-so | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 2.500 | 50 ma | 4 µs, 7 µs | 80V | 1,25 V. | 50 ma | 3750 VRMs | 100% @ 5ma | 300% @ 5ma | 7 µs, 7 µs | 300mV | ||||||||||||||||
![]() | TLP781F (D4grt7fd, f | - - - | ![]() | 4341 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,400 ", 10,16 mm) | TLP781f | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP781F (D4grt7fdftr | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 100% @ 5ma | 300% @ 5ma | 3 µs, 3 µs | 400mV | ||||||||||||||||
![]() | FODM121R2V | 1.0000 | ![]() | 8227 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 110 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | DC | 1 | Transistor | 4-smd | Herunterladen | Ear99 | 8541.49.8000 | 1 | 80 Ma | 3 µs, 3 µs | 80V | 1,3 V (max) | 50 ma | 3750 VRMs | 50% @ 5ma | 600% @ 5ma | - - - | 400mV | |||||||||||||||||||
![]() | TLP759 (D4MB3F4, J, F. | - - - | ![]() | 6129 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | K. Loch | 8-DIP (0,300 ", 7,62 mm) | TLP759 | DC | 1 | Transistor -MIT -Basis | 8-DIP | Herunterladen | 264-TLP759 (D4MB3F4JF | Ear99 | 8541.49.8000 | 1 | 8ma | - - - | - - - | 1,65 v | 25 ma | 5000 VRMs | 20% @ 16 ma | - - - | - - - | - - - | |||||||||||||||||
![]() | TLP628M (LF5, e | 0,9100 | ![]() | 9981 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -55 ° C ~ 125 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | TLP628 | DC | 1 | Transistor | 4-smd | Herunterladen | 1 (unbegrenzt) | 264-TLP628M (LF5E | Ear99 | 8541.49.8000 | 100 | 50 ma | 5,5 µs, 10 µs | 350 V | 1,25 V. | 50 ma | 5000 VRMs | 50% @ 5ma | 600% @ 5ma | 10 µs, 10 µs | 400mV | ||||||||||||||||
![]() | H11A1VM | 1.0000 | ![]() | 5228 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 100 ° C. | K. Loch | 6-DIP (0,300 ", 7,62 mm) | DC | 1 | Transistor -MIT -Basis | 6-DIP | Herunterladen | Ear99 | 8541.49.8000 | 1 | - - - | - - - | 30V | 1,18 v | 60 mA | 4170 VRMs | 50% @ 10 mA | - - - | 2 µs, 2 µs | 400mV | |||||||||||||||||||
![]() | H11a3 | 0,0900 | ![]() | 3666 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 110 ° C. | K. Loch | 6-DIP (0,300 ", 7,62 mm) | DC | 1 | Transistor -MIT -Basis | 6-DIP | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.49.8000 | 25 | - - - | - - - | 80V | 1,2 v | 60 mA | 5000 VRMs | 20% @ 10 mA | - - - | 3 µs, 3 µs | 400mV | ||||||||||||||||||
![]() | TLP9121A (MBHAGBTLF | - - - | ![]() | 1213 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Schüttgut | Veraltet | - - - | 264-TLP9121A (MBHAGBTLF | Ear99 | 8541.49.8000 | 1 | |||||||||||||||||||||||||||||||||||
![]() | TLP785F (D4TEET7F | - - - | ![]() | 5501 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,400 ", 10,16 mm) | TLP785 | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP785F (D4TEET7FTR | Ear99 | 8541.49.8000 | 2.000 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 50% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | ||||||||||||||||
![]() | TLX9185 (pedgbtlf (o | - - - | ![]() | 2766 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Schüttgut | Veraltet | - - - | 264-TLX9185 (Pedgbtlf (o | Ear99 | 8541.49.8000 | 1 | |||||||||||||||||||||||||||||||||||
![]() | HCPL-2731#500 | 2.7157 | ![]() | 9042 | 0.00000000 | Broadcom Limited | - - - | Band & Rollen (TR) | Aktiv | 0 ° C ~ 70 ° C. | Oberflächenhalterung | 8-smd, Möwenflügel | HCPL-2731 | DC | 2 | Darlington | 8-DIP-Möwenflügel | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 1.000 | 60 mA | - - - | 18V | 1,4 v | 12 Ma | 3750 VRMs | 500% @ 1,6 mA | 2600% @ 1,6 mA | 5 µs, 10 µs | 100mv | |||||||||||||||
![]() | TLP2304 (tpl, e | 1.4100 | ![]() | 4087 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 6-Soic (0,179 ", 4,55 mm Beitite), 5 Leads | TLP2304 | DC | 1 | Offener Sammler | 4,5 V ~ 30 V | 6-so, 5 Blei | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 3.000 | 15 Ma | 1MB | - - - | 1,55 v | 25ma | 3750 VRMs | 1/0 | 20 kV/µs | 550ns, 400 ns | |||||||||||||||||
![]() | OLS700SB | - - - | ![]() | 9577 | 0.00000000 | Skyworks Solutions Inc. | - - - | Schüttgut | Veraltet | OLS700 | - - - | 863-ols700SB | Ear99 | 8541.49.8000 | 1 | ||||||||||||||||||||||||||||||||||
![]() | TLP127 (Sony-TPL, F) | - - - | ![]() | 5109 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd (4 Leitungen), Möwenflügel | TLP127 | DC | 1 | Darlington | 6-mfsop, 4 Blei | - - - | 1 (unbegrenzt) | 264-TLP127 (Sony-TPLF) Tr | Ear99 | 8541.49.8000 | 3.000 | 150 Ma | 40 µs, 15 µs | 300 V | 1,15 V | 50 ma | 2500 VRMs | 1000% @ 1ma | - - - | 50 µs, 15 µs | 1,2 v | ||||||||||||||||
![]() | TLP626 (LF5, F) | - - - | ![]() | 2264 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | -55 ° C ~ 100 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | TLP626 | AC, DC | 1 | Transistor | 4-DIP | Herunterladen | 264-TLP626 (LF5F) | Ear99 | 8541.49.8000 | 1 | 50 ma | 8 µs, 8 µs | 55 v | 1,15 V | 60 mA | 5000 VRMs | 100% @ 1ma | 1200% @ 1ma | 10 µs, 8 µs | 400mV | |||||||||||||||||
![]() | PS9317L-V-E3-AX | 4.0200 | ![]() | 5129 | 0.00000000 | Renesas Electronics America Inc. | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C. | Oberflächenhalterung | 6-Soic (0,268 ", 6,80 mm BreiTe) | PS9317 | DC | 1 | Offener Sammler | 4,5 V ~ 5,5 V. | 6-sdip-möwenflügel | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 2.000 | 25 ma | 10 mbit / s | 20ns, 5ns | 1,56 v | 20 ma | 5000 VRMs | 1/0 | 15kV/µs | 75ns, 75ns | |||||||||||||||
![]() | HCPL-2219#060 | - - - | ![]() | 1490 | 0.00000000 | Broadcom Limited | - - - | Rohr | Abgebrochen bei Sic | -40 ° C ~ 85 ° C. | K. Loch | 8-DIP (0,300 ", 7,62 mm) | DC | 1 | Tri-staat | 4,5 V ~ 20V | 8-DIP | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 50 | 25 ma | 2,5 MBD | 55ns, 15ns | 1,5 v | 10 ma | 3750 VRMs | 1/0 | 2,5 kV/µs | 300 ns, 300 ns | ||||||||||||||||
![]() | SFH601-2 | 1.3400 | ![]() | 546 | 0.00000000 | Vishay Semiconductor Opto Division | - - - | Rohr | Aktiv | -55 ° C ~ 100 ° C. | K. Loch | 6-DIP (0,300 ", 7,62 mm) | SFH601 | DC | 1 | Transistor -MIT -Basis | 6-DIP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 50 | 50 ma | 2 µs, 2 µs | 100V | 1,25 V. | 60 mA | 5300 VRMs | 63% @ 10 mA | 125% @ 10 mA | 3 µs, 2,3 µs | 400mV | |||||||||||||||
![]() | LTV-814-A | 0,1695 | ![]() | 7539 | 0.00000000 | Lite-on Inc. | LTV-8x4 | Rohr | Aktiv | -50 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | LTV-814 | AC, DC | 1 | Transistor | 4-DIP | Herunterladen | ROHS3 -KONFORM | 160-LTV-814-A | Ear99 | 8541.49.8000 | 100 | 50 ma | 4 µs, 3 µs | 35 V | 1,2 v | 50 ma | 5000 VRMs | 20% @ 1ma | 300% @ 1ma | - - - | 200mv | ||||||||||||||||
![]() | TLP291 (GB-TP, E) | - - - | ![]() | 5477 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 4-soic (0,179 ", 4,55 mm BreiTe) | TLP291 | DC | 1 | Transistor | 4-so | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.49.8000 | 2.500 | 50 ma | 4 µs, 7 µs | 80V | 1,25 V. | 50 ma | 3750 VRMs | 100% @ 5ma | 400% @ 5ma | 7 µs, 7 µs | 300mV | ||||||||||||||||
![]() | Fod617bsd | - - - | ![]() | 9346 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 110 ° C. | Oberflächenhalterung | 4-smd, Möwenflügel | DC | 1 | Transistor | 4-smd | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.49.8000 | 1.000 | 50 ma | 4 µs, 3 µs | 70V | 1,35 v | 50 ma | 5000 VRMs | 63% @ 10 mA | 125% @ 10 mA | - - - | 400mV | ||||||||||||||||||
![]() | ACFL-5211U-060E | 2.6710 | ![]() | 1596 | 0.00000000 | Broadcom Limited | R²couper ™ | Rohr | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 12-BSOP (0,295 ", 7,50 mm Breit) | ACFL-5211 | DC | 2 | Transistor | 12-so | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8541.49.8000 | 80 | 8ma | - - - | 20V | 1,55 v | 20 ma | 5000 VRMs | 32% @ 10 mA | 100% @ 10ma | 150ns, 500 ns | - - - | |||||||||||||||
![]() | OCI934 | 0,5900 | ![]() | 14 | 0.00000000 | Texas Instrumente | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.49.8000 | 1 | |||||||||||||||||||||||||||||||||
TIL111VM | 1.0000 | ![]() | 6233 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 100 ° C. | K. Loch | 6-DIP (0,300 ", 7,62 mm) | DC | 1 | Transistor -MIT -Basis | 6-DIP | Herunterladen | Ear99 | 8541.49.8000 | 1 | 2ma | 10 µs, 10 µs (max) | 30V | 1,2 v | 60 mA | 7500vpk | - - - | - - - | - - - | 400mV | ||||||||||||||||||||
![]() | VO3023-X017T | 0,3432 | ![]() | 1588 | 0.00000000 | Vishay Semiconductor Opto Division | VO3023 | Band & Rollen (TR) | Aktiv | -40 ° C ~ 100 ° C. | Oberflächenhalterung | 6-smd, Möwenflügel | CQC, CSA, Cul, Fimko, UL, VDE | 1 | Triac | 6-smd | Herunterladen | 751-VO3023-X017TTR | Ear99 | 8541.49.8000 | 1.000 | 1,3 v | 50 ma | 5000 VRMs | 400 V | 100 ma | 200 µA (Typ) | NEIN | 100 V/µs | 5ma | - - - | ||||||||||||||||||
![]() | TLP785 (D4-LF6, f | - - - | ![]() | 5826 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | -55 ° C ~ 110 ° C. | K. Loch | 4-DIP (0,300 ", 7,62 mm) | TLP785 | DC | 1 | Transistor | 4-DIP | Herunterladen | 1 (unbegrenzt) | 264-TLP785 (D4-LF6F | Ear99 | 8541.49.8000 | 100 | 50 ma | 2 µs, 3 µs | 80V | 1,15 V | 60 mA | 5000 VRMs | 50% @ 5ma | 600% @ 5ma | 3 µs, 3 µs | 400mV | ||||||||||||||||
![]() | TLP750 (Nemic-LF2, f | - - - | ![]() | 4421 | 0.00000000 | Toshiba Semiconductor und Lagerung | * | Rohr | Veraltet | TLP750 | - - - | 1 (unbegrenzt) | 264-TLP750 (Nemic-LF2F | Ear99 | 8541.49.8000 | 50 | |||||||||||||||||||||||||||||||||
![]() | RF-817M*-*-c | 0,3100 | ![]() | 5634 | 0.00000000 | Refond | - - - | Rohr | Aktiv | K. Loch | 4-DIP | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 4784-RF-817M*-*-c | 100 | 5000 VRMs | ||||||||||||||||||||||||||||||||
![]() | TLP250H (TP5, F) | - - - | ![]() | 9916 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C. | Oberflächenhalterung | 8-smd, Möwenflügel | TLP250 | DC | 1 | Push-Pull, Totem Pole | 10 V ~ 30 V | 8-smd | Herunterladen | 1 (unbegrenzt) | 264-TLP250H (TP5F) TR | Ear99 | 8541.49.8000 | 1.500 | 2 a | - - - | 50ns, 50 ns | 1,57 v | 20 ma | 3750 VRMs | 1/0 | 40 kV/µs | 500 ns, 500 ns |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus