SIC
close
Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Technologie SPANNUNG - Verrorane LEEFERANTENGERATEPAKET Datenblatt Andere Namen Htsus Standardpaket Taktfrequenz Speichertyp Speichergrö Zugriffszeit Speicherformat Speicherorganisation Speicherschnittstelle Zykluszeitscheiben - Würze, Site
GD55WR512MEYIGY GigaDevice Semiconductor (HK) Limited GD55WR512MEYIGY 4.8228
RFQ
ECAD 7672 0.00000000 Gigadevice Semiconductor (HK) Limited GD55WR Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD55WR512Meyigy 4.800 104 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o - - -
GD5F1GQ5REWIGR GigaDevice Semiconductor (HK) Limited GD5F1GQ5REWIGR 2.4851
RFQ
ECAD 5290 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (5x6) Herunterladen 1970-GD5F1GQ5REWIGRTR 3.000 104 MHz Nicht Flüchtig 1Gbit 9,5 ns Blitz 256 mx 4 Spi - quad i/o, qpi, dtr 600 µs
GD25Q16ETEGR GigaDevice Semiconductor (HK) Limited GD25Q16ETGRGRGR 0,6552
RFQ
ECAD 3651 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25Q16etegrtr 3.000 133 MHz Nicht Flüchtig 16mbit 7 ns Blitz 2m x 8 Spi - quad i/o 140 µs, 4 ms
GD25F128FSIGR GigaDevice Semiconductor (HK) Limited GD25F128FSIGR 1.3198
RFQ
ECAD 2850 0.00000000 Gigadevice Semiconductor (HK) Limited GD25F Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop - - - 1970-GD25F128fSigrtr 2.000 200 MHz Nicht Flüchtig 128mbit Blitz 16 mx 8 Spi - quad i/o - - -
GD25LQ64ENAGR GigaDevice Semiconductor (HK) Limited GD25LQ64Enagr 1.5582
RFQ
ECAD 5729 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (3x4) - - - 1970-GD25LQ64Enagrtr 3.000 133 MHz Nicht Flüchtig 64Mbit 6 ns Blitz 8m x 8 Spi - quad i/o, qpi 100 µs, 4 ms
GD55LE511MEYIGY GigaDevice Semiconductor (HK) Limited GD55LE511MEYIGY 4.3092
RFQ
ECAD 8110 0.00000000 Gigadevice Semiconductor (HK) Limited - - - Tablett Aktiv - - - 1970-GD55LE511MEYIGY 4.800
GD25Q32ENEGR GigaDevice Semiconductor (HK) Limited GD25Q32Engr 0,8705
RFQ
ECAD 6144 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-uson (3x4) Herunterladen 1970-GD25Q32Enegrtr 3.000 133 MHz Nicht Flüchtig 32Mbit 7 ns Blitz 4m x 8 Spi - quad i/o 140 µs, 4 ms
GD25B32EWIGR GigaDevice Semiconductor (HK) Limited GD25B32EWIGR 0,7134
RFQ
ECAD 9009 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (5x6) Herunterladen 1970-GD25B32EWIGRTR 3.000 133 MHz Nicht Flüchtig 32Mbit 7 ns Blitz 4m x 8 Spi - quad i/o 70 µs, 2,4 ms
GD25LD20EKIGR GigaDevice Semiconductor (HK) Limited GD25LD20EKIGR 0,3167
RFQ
ECAD 4484 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (1,5x1,5) Herunterladen 1970-GD25LD20EKIGRTR 3.000 50 MHz Nicht Flüchtig 2mbit 12 ns Blitz 256k x 8 Spi - dual i/o 100 µs, 6 ms
GD55B01GEBIRY GigaDevice Semiconductor (HK) Limited GD55B01GEBIRY 8.4011
RFQ
ECAD 3284 0.00000000 Gigadevice Semiconductor (HK) Limited GD55B Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 2,7 V ~ 3,6 V. 24-TFBGA (6x8) Herunterladen 1970-GD55B01GEBIRY 8542.32.0071 4.800 133 MHz Nicht Flüchtig 1Gbit Blitz 128 MX 8 Spi - quad i/o, qpi, dtr - - -
GD25LQ40EEIGR GigaDevice Semiconductor (HK) Limited GD25LQ40EEIGR 0,3818
RFQ
ECAD 4285 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (3x2) Herunterladen 1970-GD25LQ40EEIGRTR 3.000 133 MHz Nicht Flüchtig 4mbit 6 ns Blitz 512k x 8 Spi - quad i/o 60 µs, 2,4 ms
GD25Q256EFJRR GigaDevice Semiconductor (HK) Limited GD25Q256EFJRR 2.9266
RFQ
ECAD 1659 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 16-so-sop Herunterladen 1970-GD25Q256efjrrtr 1.000 133 MHz Nicht Flüchtig 256mbit Blitz 32m x 8 Spi - quad i/o - - -
GD25WD40EKIGR GigaDevice Semiconductor (HK) Limited GD25WD40EKIGR 0,3676
RFQ
ECAD 3820 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (1,5x1,5) Herunterladen 1970-GD25WD40EKIGRTR 3.000 104 MHz Nicht Flüchtig 4mbit 6 ns Blitz 512k x 8 Spi - dual i/o 100 µs, 6 ms
GD25WD40EK6IGR GigaDevice Semiconductor (HK) Limited GD25WD40EK6IGR 0,4077
RFQ
ECAD 9951 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (1,5x1,5) Herunterladen 1970-GD25WD40EK6IGRTR 3.000 104 MHz Nicht Flüchtig 4mbit 6 ns Blitz 512k x 8 Spi - dual i/o 100 µs, 6 ms
GD25LT512MEYIGR GigaDevice Semiconductor (HK) Limited GD25LT512MEYIGR 5.7190
RFQ
ECAD 6710 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LT Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (6x8) - - - 1970-GD25LT512meyigrtr 3.000 200 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD5F1GM7REYIGY GigaDevice Semiconductor (HK) Limited GD5F1GM7REYIGY 2.1331
RFQ
ECAD 2861 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (6x8) Herunterladen 1970-GD5F1GM7REYIGY 4.800 104 MHz Nicht Flüchtig 1Gbit 9 ns Blitz 256 mx 4 Spi - quad i/o, dtr 600 µs
GD25WQ80ETJGR GigaDevice Semiconductor (HK) Limited GD25WQ80TJGR 0,5242
RFQ
ECAD 9287 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25WQ80TJGrtr 3.000 84 MHz Nicht Flüchtig 8mbit 12 ns Blitz 1m x 8 Spi - quad i/o 240 µs, 8 ms
GD25LQ64ENJGR GigaDevice Semiconductor (HK) Limited GD25LQ64ENJGR 1.0811
RFQ
ECAD 2294 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (3x4) Herunterladen 1970-GD25LQ64ENJGrtr 3.000 133 MHz Nicht Flüchtig 64Mbit 6 ns Blitz 8m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD55LT02GEBARY GigaDevice Semiconductor (HK) Limited GD55LT02GEBARY 37.1750
RFQ
ECAD 2866 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LT Tablett Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 1,65 V ~ 2 V 24-TFBGA (6x8) - - - 1970-GD55LT02GEBARY 4.800 166 MHz Nicht Flüchtig 2Gbit Blitz 256 mx 8 Spi - quad i/o, qpi, dtr - - -
GD25B512MEBJRY GigaDevice Semiconductor (HK) Limited GD25B512MEBJRY 5.2136
RFQ
ECAD 4467 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 2,7 V ~ 3,6 V. 24-TFBGA (6x8) Herunterladen 1970-GD25B512Mebjry 4.800 133 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD25Q80ETEGR GigaDevice Semiconductor (HK) Limited GD25Q80ETGRGR 0,4525
RFQ
ECAD 2591 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25Q80Tegrtr 3.000 133 MHz Nicht Flüchtig 8mbit 7 ns Blitz 1m x 8 Spi - quad i/o 140 µs, 4 ms
GD55WB512MEYIGY GigaDevice Semiconductor (HK) Limited GD55WB512MEYIGY 4.6816
RFQ
ECAD 4786 0.00000000 Gigadevice Semiconductor (HK) Limited GD55WB Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD55WB512Meyigy 4.800 104 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o - - -
GD25LQ64EWAGR GigaDevice Semiconductor (HK) Limited GD25LQ64EWAGR 1.6045
RFQ
ECAD 6739 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (5x6) - - - 1970-GD25LQ64EWAGRTR 3.000 133 MHz Nicht Flüchtig 64Mbit 6 ns Blitz 8m x 8 Spi - quad i/o, qpi 100 µs, 4 ms
GD25LD40EKIGR GigaDevice Semiconductor (HK) Limited GD25LD40EKIGR 0,3619
RFQ
ECAD 4375 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (1,5x1,5) Herunterladen 1970-GD25LD40EKIGRTR 3.000 50 MHz Nicht Flüchtig 4mbit 12 ns Blitz 512k x 8 Spi - dual i/o 100 µs, 6 ms
GD25D80CTIGR GigaDevice Semiconductor (HK) Limited GD25D80CTIGIGIGR 0,2783
RFQ
ECAD 2411 0.00000000 Gigadevice Semiconductor (HK) Limited GD25d Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25D80CTIGRTR 3.000 100 MHz Nicht Flüchtig 8mbit 6 ns Blitz 1m x 8 Spi - dual i/o 50 µs, 4 ms
GD5F4GM8REYIGR GigaDevice Semiconductor (HK) Limited GD5F4GM8REYIGR 5.9085
RFQ
ECAD 2453 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (6x8) Herunterladen 1970-GD5F4GM8REYIGRTR 3.000 104 MHz Nicht Flüchtig 4Gbit 9 ns Blitz 512 MX 8 Spi - quad i/o, dtr 600 µs
GD5F2GM7UEYIGY GigaDevice Semiconductor (HK) Limited GD5F2GM7UEYIGY 3.2825
RFQ
ECAD 6646 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) Herunterladen 1970-GD5F2GM7UEYIGY 4.800 133 MHz Nicht Flüchtig 2Gbit 7 ns Blitz 256 mx 8 Spi - quad i/o, dtr 600 µs
GD25Q256EWIGY GigaDevice Semiconductor (HK) Limited GD25Q256EWIGY 2.2897
RFQ
ECAD 7620 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (5x6) Herunterladen 1970-GD25Q256EWIGY 5.700 133 MHz Nicht Flüchtig 256mbit Blitz 32m x 8 Spi - quad i/o - - -
GD25LT512MEFIRY GigaDevice Semiconductor (HK) Limited GD25LT512Mefiry 5.7957
RFQ
ECAD 6463 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LT Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 1,65 V ~ 2 V 16-so-sop - - - 1970-GD25LT512Mefiry 1.760 200 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD25Q64CW2GR GigaDevice Semiconductor (HK) Limited GD25Q64CW2GR 1.3970
RFQ
ECAD 9623 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (5x6) - - - 1970-GD25Q64CW2Grtr 3.000 120 MHz Nicht Flüchtig 64Mbit 7 ns Blitz 8m x 8 Spi - quad i/o 60 µs, 4 ms
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus