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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Technologie SPANNUNG - Verrorane LEEFERANTENGERATEPAKET Datenblatt Andere Namen Standardpaket Taktfrequenz Speichertyp Speichergrö Zugriffszeit Speicherformat Speicherorganisation Speicherschnittstelle Zykluszeitscheiben - Würze, Site
GD25LB512MEY2GY GigaDevice Semiconductor (HK) Limited GD25LB512MEY2GY 7.1953
RFQ
ECAD 5315 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LB Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (6x8) - - - 1970-GD25LB512MEY2GY 4.800 133 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD25Q40ETEGR GigaDevice Semiconductor (HK) Limited GD25Q40ETGRGR 0,4101
RFQ
ECAD 9638 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25Q40Tegrtr 3.000 133 MHz Nicht Flüchtig 4mbit 7 ns Blitz 512k x 8 Spi - quad i/o 140 µs, 4 ms
GD25Q20EEAGR GigaDevice Semiconductor (HK) Limited GD25Q20EAVR 0,5656
RFQ
ECAD 4992 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-uson (3x2) - - - 1970-GD25Q20EEAGRTR 3.000 133 MHz Nicht Flüchtig 2mbit 7 ns Blitz 256k x 8 Spi - quad i/o 140 µs, 4 ms
GD25LB512MEYIGY GigaDevice Semiconductor (HK) Limited GD25LB512MEYIGY 4.5752
RFQ
ECAD 9443 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LB Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (6x8) Herunterladen 1970-GD25LB512Meyigy 4.800 133 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD25LB512MEYIGR GigaDevice Semiconductor (HK) Limited GD25LB512MEYIGR 4.6509
RFQ
ECAD 1068 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LB Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (6x8) Herunterladen 1970-GD25LB512Meyigrtr 3.000 133 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD9FU8G8E2AMGI GigaDevice Semiconductor (HK) Limited GD9FU8G8E2AMGI 14.3117
RFQ
ECAD 9780 0.00000000 Gigadevice Semiconductor (HK) Limited GD9f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 48-TFSOP (0,724 ", 18.40 mm Breit) Flash - Nand (SLC) 2,7 V ~ 3,6 V. 48-tsop i Herunterladen 1970-GD9FU8G8E2AMGI 960 Nicht Flüchtig 8gbit 18 ns Blitz 1g x 8 Onfi 20ns
GD25LQ128DS2GR GigaDevice Semiconductor (HK) Limited GD25LQ128DS2GR 2.0015
RFQ
ECAD 7643 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop - - - 1970-GD25LQ128DS2Grtr 2.000 104 MHz Nicht Flüchtig 128mbit 6 ns Blitz 16 mx 8 Spi - quad i/o, qpi 2,4 ms
GD25LQ32EQEGR GigaDevice Semiconductor (HK) Limited GD25LQ32EQegr 0,9828
RFQ
ECAD 3861 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-XDFN Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (4x4) Herunterladen 1970-GD25LQ32EQegrtr 3.000 133 MHz Nicht Flüchtig 32Mbit 6 ns Blitz 4m x 8 Spi - quad i/o, qpi 100 µs, 4 ms
GD25LQ128EFIRR GigaDevice Semiconductor (HK) Limited GD25LQ128EFIRR 1.4778
RFQ
ECAD 3146 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 1,65 V ~ 2 V 16-so-sop Herunterladen 1970-GD25LQ128EFIRRTR 1.000 120 MHz Nicht Flüchtig 128mbit 6 ns Blitz 16 mx 8 Spi - quad i/o 60 µs, 2,4 ms
GD25B128EYIGY GigaDevice Semiconductor (HK) Limited GD25B128EYIGY 1.2709
RFQ
ECAD 5180 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) Herunterladen 1970-GD25B128EYIGY 4.800 133 MHz Nicht Flüchtig 128mbit 7 ns Blitz 16 mx 8 Spi - quad i/o 70 µs, 2,4 ms
GD55LT01GEF2RR GigaDevice Semiconductor (HK) Limited GD55LT01GEF2RR 17.1434
RFQ
ECAD 6424 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LT Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 1,65 V ~ 2 V 16-so-sop - - - 1970-GD55LT01GEF2RRTR 1.000 Nicht Flüchtig 1Gbit Blitz 128 MX 8 Spi - quad i/o, qpi, dtr - - -
GD25WD20EKIGR GigaDevice Semiconductor (HK) Limited GD25WD20EKIGR 0,3167
RFQ
ECAD 1678 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (1,5x1,5) Herunterladen 1970-GD25WD20EKIGRTR 3.000 104 MHz Nicht Flüchtig 2mbit 6 ns Blitz 256k x 8 Spi - dual i/o 100 µs, 6 ms
GD25S512MDYEGR GigaDevice Semiconductor (HK) Limited GD25S512MDYEG 6.0164
RFQ
ECAD 9308 0.00000000 Gigadevice Semiconductor (HK) Limited GD25s Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) Herunterladen 1970-GD25S512MDyegrtr 3.000 104 MHz Nicht Flüchtig 512mbit 7 ns Blitz 64m x 8 Spi - quad i/o 60 µs, 2,5 ms
GD25LD40CKIGR GigaDevice Semiconductor (HK) Limited GD25LD40CKIG 0,3640
RFQ
ECAD 5718 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (1,5x1,5) Herunterladen 1970-GD25LD40CKIGRTR 3.000 50 MHz Nicht Flüchtig 4mbit 12 ns Blitz 512k x 8 Spi - dual i/o 97 µs, 6 ms
GD55LB01GEBIRY GigaDevice Semiconductor (HK) Limited GD55LB01GEBIRY 8.5364
RFQ
ECAD 1428 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LB Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 1,65 V ~ 2 V 24-TFBGA (6x8) Herunterladen 1970-GD55LB01GEBIRY 4.800 166 MHz Nicht Flüchtig 1Gbit 6 ns Blitz 128 MX 8 Spi - quad i/o, qpi, dtr 70 µs, 1,2 ms
GD25B512MEF2RY GigaDevice Semiconductor (HK) Limited GD25B512MEF2RY 6.7702
RFQ
ECAD 9276 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 16-so-sop - - - 1970-GD25B512MEF2RY 1.760 133 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD25LE80ESIGR GigaDevice Semiconductor (HK) Limited GD25LE80SIGR 0,4077
RFQ
ECAD 1722 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LE Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop - - - 1970-GD25LE80Sigrtr 2.000 133 MHz Nicht Flüchtig 8mbit 6 ns Blitz 1m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25WQ128EYIGR GigaDevice Semiconductor (HK) Limited GD25WQ128EYIGR 1.4385
RFQ
ECAD 3490 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-Wson (6x8) Herunterladen 1970-GD25WQ128EYIGRTR 3.000 104 MHz Nicht Flüchtig 128mbit 8 ns Blitz 16 mx 8 Spi - quad i/o 120 µs, 4 ms
GD25Q20CEAGR GigaDevice Semiconductor (HK) Limited GD25Q20Ceagr 0,6080
RFQ
ECAD 6661 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-uson (3x2) - - - 1970-GD25Q20CeAgrtr 3.000 80 MHz Nicht Flüchtig 2mbit 7 ns Blitz 256k x 8 Spi - quad i/o 60 µs, 4 ms
GD25LB256EYIGR GigaDevice Semiconductor (HK) Limited GD25LB256EYIGR 2.3929
RFQ
ECAD 2509 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LB Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (6x8) Herunterladen 1970-GD25LB256EYIGRTR 3.000 166 MHz Nicht Flüchtig 256mbit 6 ns Blitz 32m x 8 Spi - quad i/o, qpi, dtr 70 µs, 1,2 ms
GD9FU1G8F2DMGI GigaDevice Semiconductor (HK) Limited GD9FU1G8F2DMGI 2.3296
RFQ
ECAD 1747 0.00000000 Gigadevice Semiconductor (HK) Limited GD9f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 48-TFSOP (0,724 ", 18.40 mm Breit) Flash - Nand (SLC) 2,7 V ~ 3,6 V. 48-tsop i Herunterladen 1970-GD9FU1G8F2DMGI 960 Nicht Flüchtig 1Gbit 9 ns Blitz 128 MX 8 Onfi 12ns, 600 µs
GD25LB32ESIGR GigaDevice Semiconductor (HK) Limited GD25LB32Sigr 0,6363
RFQ
ECAD 2319 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LB Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop Herunterladen 1970-GD25LB32Sigrtr 2.000 133 MHz Nicht Flüchtig 32Mbit 6 ns Blitz 4m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25WQ64ENEGR GigaDevice Semiconductor (HK) Limited GD25WQ64Negr 1.2544
RFQ
ECAD 1709 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (3x4) Herunterladen 1970-GD25WQ64Negrtr 3.000 84 MHz Nicht Flüchtig 64Mbit 12 ns Blitz 8m x 8 Spi - quad i/o 240 µs, 8 ms
GD25LQ16EWIGY GigaDevice Semiconductor (HK) Limited GD25LQ16EWIGY 0,5642
RFQ
ECAD 5262 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2,1 V. 8-Wson (5x6) Herunterladen 1970-GD25LQ16EWIGY 5.700 133 MHz Nicht Flüchtig 16mbit 6 ns Blitz 2m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25LQ128DW2GR GigaDevice Semiconductor (HK) Limited GD25LQ128DW2GR 2.2408
RFQ
ECAD 8751 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (5x6) - - - 1970-GD25LQ128DW2Grtr 3.000 104 MHz Nicht Flüchtig 128mbit 6 ns Blitz 16 mx 8 Spi - quad i/o, qpi 2,4 ms
GD25Q16ESJGR GigaDevice Semiconductor (HK) Limited GD25Q16ESJGR 0,5515
RFQ
ECAD 1990 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25Q16esjgrtr 2.000 133 MHz Nicht Flüchtig 16mbit 7 ns Blitz 2m x 8 Spi - quad i/o 140 µs, 4 ms
GD5F2GQ5UEYIGY GigaDevice Semiconductor (HK) Limited GD5F2GQ5UEYIGY 3.9235
RFQ
ECAD 6089 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) Herunterladen 1970-GD5F2GQ5UEYIGY 4.800 104 MHz Nicht Flüchtig 2Gbit 9 ns Blitz 256 mx 8 Spi - quad i/o 600 µs
GD25WD20EEIGR GigaDevice Semiconductor (HK) Limited GD25WD20EEIGR 0,2865
RFQ
ECAD 4817 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (3x2) Herunterladen 1970-GD25WD20eeigrtr 3.000 104 MHz Nicht Flüchtig 2mbit 6 ns Blitz 256k x 8 Spi - dual i/o 100 µs, 6 ms
GD25LQ64EY2GR GigaDevice Semiconductor (HK) Limited GD25LQ64EY2GR 1.3970
RFQ
ECAD 7764 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (6x8) - - - 1970-GD25LQ64EY2Grtr 3.000 133 MHz Nicht Flüchtig 64Mbit 6 ns Blitz 8m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25WQ16EEIGR GigaDevice Semiconductor (HK) Limited GD25WQ16EEIGR 0,5824
RFQ
ECAD 6087 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (3x2) Herunterladen 1970-GD25WQ16eeergrtr 3.000 104 MHz Nicht Flüchtig 16mbit 12 ns Blitz 2m x 8 Spi - quad i/o 120 µs, 4 ms
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus