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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Technologie | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | Andere Namen | Standardpaket | Taktfrequenz | Speichertyp | Speichergrö | Zugriffszeit | Speicherformat | Speicherorganisation | Speicherschnittstelle | Zykluszeitscheiben - Würze, Site |
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![]() | GD25LB512MEY2GY | 7.1953 | ![]() | 5315 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LB | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Wson (6x8) | - - - | 1970-GD25LB512MEY2GY | 4.800 | 133 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o, qpi, dtr | - - - | ||
![]() | GD25Q40ETGRGR | 0,4101 | ![]() | 9638 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25Q | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Sop | Herunterladen | 1970-GD25Q40Tegrtr | 3.000 | 133 MHz | Nicht Flüchtig | 4mbit | 7 ns | Blitz | 512k x 8 | Spi - quad i/o | 140 µs, 4 ms | |
![]() | GD25Q20EAVR | 0,5656 | ![]() | 4992 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25Q | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-uson (3x2) | - - - | 1970-GD25Q20EEAGRTR | 3.000 | 133 MHz | Nicht Flüchtig | 2mbit | 7 ns | Blitz | 256k x 8 | Spi - quad i/o | 140 µs, 4 ms | |
![]() | GD25LB512MEYIGY | 4.5752 | ![]() | 9443 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LB | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Wson (6x8) | Herunterladen | 1970-GD25LB512Meyigy | 4.800 | 133 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o, qpi, dtr | - - - | ||
![]() | GD25LB512MEYIGR | 4.6509 | ![]() | 1068 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LB | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Wson (6x8) | Herunterladen | 1970-GD25LB512Meyigrtr | 3.000 | 133 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o, qpi, dtr | - - - | ||
![]() | GD9FU8G8E2AMGI | 14.3117 | ![]() | 9780 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD9f | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 48-TFSOP (0,724 ", 18.40 mm Breit) | Flash - Nand (SLC) | 2,7 V ~ 3,6 V. | 48-tsop i | Herunterladen | 1970-GD9FU8G8E2AMGI | 960 | Nicht Flüchtig | 8gbit | 18 ns | Blitz | 1g x 8 | Onfi | 20ns | ||
![]() | GD25LQ128DS2GR | 2.0015 | ![]() | 7643 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Sop | - - - | 1970-GD25LQ128DS2Grtr | 2.000 | 104 MHz | Nicht Flüchtig | 128mbit | 6 ns | Blitz | 16 mx 8 | Spi - quad i/o, qpi | 2,4 ms | |
![]() | GD25LQ32EQegr | 0,9828 | ![]() | 3861 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-XDFN Exponierte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-uson (4x4) | Herunterladen | 1970-GD25LQ32EQegrtr | 3.000 | 133 MHz | Nicht Flüchtig | 32Mbit | 6 ns | Blitz | 4m x 8 | Spi - quad i/o, qpi | 100 µs, 4 ms | |
![]() | GD25LQ128EFIRR | 1.4778 | ![]() | 3146 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 16-soic (0,295 ", 7,50 mm BreiTe) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 16-so-sop | Herunterladen | 1970-GD25LQ128EFIRRTR | 1.000 | 120 MHz | Nicht Flüchtig | 128mbit | 6 ns | Blitz | 16 mx 8 | Spi - quad i/o | 60 µs, 2,4 ms | |
![]() | GD25B128EYIGY | 1.2709 | ![]() | 5180 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25B | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | Herunterladen | 1970-GD25B128EYIGY | 4.800 | 133 MHz | Nicht Flüchtig | 128mbit | 7 ns | Blitz | 16 mx 8 | Spi - quad i/o | 70 µs, 2,4 ms | |
![]() | GD55LT01GEF2RR | 17.1434 | ![]() | 6424 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55LT | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 16-soic (0,295 ", 7,50 mm BreiTe) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 16-so-sop | - - - | 1970-GD55LT01GEF2RRTR | 1.000 | Nicht Flüchtig | 1Gbit | Blitz | 128 MX 8 | Spi - quad i/o, qpi, dtr | - - - | |||
![]() | GD25WD20EKIGR | 0,3167 | ![]() | 1678 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WD | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-uson (1,5x1,5) | Herunterladen | 1970-GD25WD20EKIGRTR | 3.000 | 104 MHz | Nicht Flüchtig | 2mbit | 6 ns | Blitz | 256k x 8 | Spi - dual i/o | 100 µs, 6 ms | |
![]() | GD25S512MDYEG | 6.0164 | ![]() | 9308 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25s | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | Herunterladen | 1970-GD25S512MDyegrtr | 3.000 | 104 MHz | Nicht Flüchtig | 512mbit | 7 ns | Blitz | 64m x 8 | Spi - quad i/o | 60 µs, 2,5 ms | |
![]() | GD25LD40CKIG | 0,3640 | ![]() | 5718 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LD | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-uson (1,5x1,5) | Herunterladen | 1970-GD25LD40CKIGRTR | 3.000 | 50 MHz | Nicht Flüchtig | 4mbit | 12 ns | Blitz | 512k x 8 | Spi - dual i/o | 97 µs, 6 ms | |
![]() | GD55LB01GEBIRY | 8.5364 | ![]() | 1428 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55LB | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 24-Tbga | Flash - Nor (SLC) | 1,65 V ~ 2 V | 24-TFBGA (6x8) | Herunterladen | 1970-GD55LB01GEBIRY | 4.800 | 166 MHz | Nicht Flüchtig | 1Gbit | 6 ns | Blitz | 128 MX 8 | Spi - quad i/o, qpi, dtr | 70 µs, 1,2 ms | |
![]() | GD25B512MEF2RY | 6.7702 | ![]() | 9276 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25B | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 16-soic (0,295 ", 7,50 mm BreiTe) | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 16-so-sop | - - - | 1970-GD25B512MEF2RY | 1.760 | 133 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o, qpi, dtr | - - - | ||
![]() | GD25LE80SIGR | 0,4077 | ![]() | 1722 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LE | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Sop | - - - | 1970-GD25LE80Sigrtr | 2.000 | 133 MHz | Nicht Flüchtig | 8mbit | 6 ns | Blitz | 1m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | |
![]() | GD25WQ128EYIGR | 1.4385 | ![]() | 3490 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-Wson (6x8) | Herunterladen | 1970-GD25WQ128EYIGRTR | 3.000 | 104 MHz | Nicht Flüchtig | 128mbit | 8 ns | Blitz | 16 mx 8 | Spi - quad i/o | 120 µs, 4 ms | |
![]() | GD25Q20Ceagr | 0,6080 | ![]() | 6661 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25Q | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-uson (3x2) | - - - | 1970-GD25Q20CeAgrtr | 3.000 | 80 MHz | Nicht Flüchtig | 2mbit | 7 ns | Blitz | 256k x 8 | Spi - quad i/o | 60 µs, 4 ms | |
![]() | GD25LB256EYIGR | 2.3929 | ![]() | 2509 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LB | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Wson (6x8) | Herunterladen | 1970-GD25LB256EYIGRTR | 3.000 | 166 MHz | Nicht Flüchtig | 256mbit | 6 ns | Blitz | 32m x 8 | Spi - quad i/o, qpi, dtr | 70 µs, 1,2 ms | |
![]() | GD9FU1G8F2DMGI | 2.3296 | ![]() | 1747 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD9f | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 48-TFSOP (0,724 ", 18.40 mm Breit) | Flash - Nand (SLC) | 2,7 V ~ 3,6 V. | 48-tsop i | Herunterladen | 1970-GD9FU1G8F2DMGI | 960 | Nicht Flüchtig | 1Gbit | 9 ns | Blitz | 128 MX 8 | Onfi | 12ns, 600 µs | ||
![]() | GD25LB32Sigr | 0,6363 | ![]() | 2319 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LB | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Sop | Herunterladen | 1970-GD25LB32Sigrtr | 2.000 | 133 MHz | Nicht Flüchtig | 32Mbit | 6 ns | Blitz | 4m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | |
![]() | GD25WQ64Negr | 1.2544 | ![]() | 1709 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-udfn Exponierte Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-uson (3x4) | Herunterladen | 1970-GD25WQ64Negrtr | 3.000 | 84 MHz | Nicht Flüchtig | 64Mbit | 12 ns | Blitz | 8m x 8 | Spi - quad i/o | 240 µs, 8 ms | |
![]() | GD25LQ16EWIGY | 0,5642 | ![]() | 5262 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 2,1 V. | 8-Wson (5x6) | Herunterladen | 1970-GD25LQ16EWIGY | 5.700 | 133 MHz | Nicht Flüchtig | 16mbit | 6 ns | Blitz | 2m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | |
![]() | GD25LQ128DW2GR | 2.2408 | ![]() | 8751 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Wson (5x6) | - - - | 1970-GD25LQ128DW2Grtr | 3.000 | 104 MHz | Nicht Flüchtig | 128mbit | 6 ns | Blitz | 16 mx 8 | Spi - quad i/o, qpi | 2,4 ms | |
![]() | GD25Q16ESJGR | 0,5515 | ![]() | 1990 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25Q | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Sop | Herunterladen | 1970-GD25Q16esjgrtr | 2.000 | 133 MHz | Nicht Flüchtig | 16mbit | 7 ns | Blitz | 2m x 8 | Spi - quad i/o | 140 µs, 4 ms | |
![]() | GD5F2GQ5UEYIGY | 3.9235 | ![]() | 6089 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD5f | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nand (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | Herunterladen | 1970-GD5F2GQ5UEYIGY | 4.800 | 104 MHz | Nicht Flüchtig | 2Gbit | 9 ns | Blitz | 256 mx 8 | Spi - quad i/o | 600 µs | |
![]() | GD25WD20EEIGR | 0,2865 | ![]() | 4817 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WD | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-uson (3x2) | Herunterladen | 1970-GD25WD20eeigrtr | 3.000 | 104 MHz | Nicht Flüchtig | 2mbit | 6 ns | Blitz | 256k x 8 | Spi - dual i/o | 100 µs, 6 ms | |
![]() | GD25LQ64EY2GR | 1.3970 | ![]() | 7764 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Wson (6x8) | - - - | 1970-GD25LQ64EY2Grtr | 3.000 | 133 MHz | Nicht Flüchtig | 64Mbit | 6 ns | Blitz | 8m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | |
![]() | GD25WQ16EEIGR | 0,5824 | ![]() | 6087 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-uson (3x2) | Herunterladen | 1970-GD25WQ16eeergrtr | 3.000 | 104 MHz | Nicht Flüchtig | 16mbit | 12 ns | Blitz | 2m x 8 | Spi - quad i/o | 120 µs, 4 ms |
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