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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Technologie SPANNUNG - Verrorane LEEFERANTENGERATEPAKET Datenblatt Andere Namen Standardpaket Taktfrequenz Speichertyp Speichergrö Zugriffszeit Speicherformat Speicherorganisation Speicherschnittstelle Zykluszeitscheiben - Würze, Site
GD5F4GM8REWIGR GigaDevice Semiconductor (HK) Limited GD5F4GM8REWIGR 6.3544
RFQ
ECAD 3728 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (5x6) Herunterladen 1970-GD5F4GM8REWIGRTR 3.000 104 MHz Nicht Flüchtig 4Gbit 9 ns Blitz 1g x 4 Spi - quad i/o, dtr 600 µs
GD25LF32ESIGR GigaDevice Semiconductor (HK) Limited GD25LF32Sigr 0,6552
RFQ
ECAD 8715 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LF Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop Herunterladen 1970-GD25LF32Sigrtr 2.000 166 MHz Nicht Flüchtig 32Mbit 5.5 ns Blitz 4m x 8 Spi - quad i/o, qpi, dtr 60 µs, 2,4 ms
GD5F2GQ5UEY2GY GigaDevice Semiconductor (HK) Limited GD5F2GQ5UEY2GY 6.1712
RFQ
ECAD 3843 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD5F2GQ5UEY2GY 4.800 104 MHz Nicht Flüchtig 2Gbit 9 ns Blitz 256 mx 8 Spi - quad i/o, dtr 600 µs
GD55B01GEBJRY GigaDevice Semiconductor (HK) Limited GD55B01GEBJRY 10.7996
RFQ
ECAD 2837 0.00000000 Gigadevice Semiconductor (HK) Limited GD55B Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 2,7 V ~ 3,6 V. 24-TFBGA (6x8) Herunterladen 1970-GD55B01gebJry 4.800 133 MHz Nicht Flüchtig 1Gbit Blitz 128 MX 8 Spi - quad i/o, qpi, dtr - - -
GD55T02GEBIRY GigaDevice Semiconductor (HK) Limited GD55T02GEBIRY 21.5992
RFQ
ECAD 1604 0.00000000 Gigadevice Semiconductor (HK) Limited GD55T Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 2,7 V ~ 3,6 V. 24-TFBGA (6x8) - - - 1970-GD55T02GEBIRY 4.800 200 MHz Nicht Flüchtig 2Gbit Blitz 256 mx 8 Spi - quad i/o, dtr - - -
GD9FU2G6F2AMGI GigaDevice Semiconductor (HK) Limited GD9FU2G6F2AMGI 4.7034
RFQ
ECAD 6944 0.00000000 Gigadevice Semiconductor (HK) Limited GD9f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 48-TFSOP (0,724 ", 18.40 mm Breit) Flash - Nand (SLC) 2,7 V ~ 3,6 V. 48-tsop i Herunterladen 1970-GD9FU2G6F2AMGI 960 Nicht Flüchtig 2Gbit 18 ns Blitz 128 MX 16 Onfi 20ns
GD25Q256EYIGY GigaDevice Semiconductor (HK) Limited GD25Q256EYIGY 2.2630
RFQ
ECAD 6652 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) Herunterladen 1970-GD25Q256EYIGY 4.800 133 MHz Nicht Flüchtig 256mbit Blitz 32m x 8 Spi - quad i/o - - -
GD5F4GM8UEYIGR GigaDevice Semiconductor (HK) Limited GD5F4GM8UEYIGR 5.9488
RFQ
ECAD 1163 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) Herunterladen 1970-GD5F4GM8UEYIGRTR 3.000 133 MHz Nicht Flüchtig 4Gbit 7 ns Blitz 1g x 4 Spi - quad i/o, dtr 600 µs
GD25LE128EWIGR GigaDevice Semiconductor (HK) Limited GD25LE128EWIGR 1.4109
RFQ
ECAD 2739 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LE Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (5x6) Herunterladen 1970-GD25LE128EWIGRTR 3.000 133 MHz Nicht Flüchtig 128mbit 6 ns Blitz 16 mx 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25B32ES2GR GigaDevice Semiconductor (HK) Limited GD25B32ES2GR 0,8999
RFQ
ECAD 7610 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop - - - 1970-GD25B32ES2Grtr 2.000 Nicht Flüchtig 32Mbit Blitz 4m x 8 Spi - quad i/o - - -
GD25WD80CSIGR GigaDevice Semiconductor (HK) Limited GD25WD80CSIGR 0,3786
RFQ
ECAD 5299 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25WD80CSigrtr 2.000 100 MHz Nicht Flüchtig 8mbit 12 ns Blitz 1m x 8 Spi - dual i/o 60 µs, 6 ms
GD5F2GQ5REYIHR GigaDevice Semiconductor (HK) Limited Gd5f2gq5reyihr 4.1912
RFQ
ECAD 7021 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (6x8) - - - 1970-GD5F2GQ5REYIHRTR 3.000 80 MHz Nicht Flüchtig 2Gbit 11 ns Blitz 512 mx 4 Spi - quad i/o, qpi, dtr 600 µs
GD55LT01GEFIRR GigaDevice Semiconductor (HK) Limited GD55LT01GEFIRR 11.1486
RFQ
ECAD 4318 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LT Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 1,65 V ~ 2 V 16-so-sop - - - 1970-GD55LT01GEFIRRTR 1.000 Nicht Flüchtig 1Gbit Blitz 128 MX 8 Spi - quad i/o, qpi, dtr - - -
GD25LQ64EW2GR GigaDevice Semiconductor (HK) Limited GD25LQ64EW2GR 1.3970
RFQ
ECAD 6830 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (5x6) - - - 1970-GD25LQ64EW2Grtr 3.000 133 MHz Nicht Flüchtig 64Mbit 6 ns Blitz 8m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25LE128E3IRR GigaDevice Semiconductor (HK) Limited GD25LE128E3IRR 1.4524
RFQ
ECAD 5134 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LE Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 26-XFBGA, WLCSP Flash - Nor (SLC) 1,65 V ~ 2 V 26-WLCSP - - - 1970-GD25LE128E3IRRTR 3.000 133 MHz Nicht Flüchtig 128mbit 6 ns Blitz 16 mx 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD9FS8G8E3AMGI GigaDevice Semiconductor (HK) Limited GD9FS8G8E3AMGI 14.9396
RFQ
ECAD 4559 0.00000000 Gigadevice Semiconductor (HK) Limited GD9f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 48-TFSOP (0,724 ", 18.40 mm Breit) Flash - Nand (SLC) 1,7 V ~ 1,95 V. 48-tsop i Herunterladen 1970-GD9FS8G8E3AMGI 960 Nicht Flüchtig 8gbit 22 ns Blitz 1g x 8 Onfi 25ns
GD25WQ20EEIGR GigaDevice Semiconductor (HK) Limited GD25WQ20EERIGR 0,3786
RFQ
ECAD 8440 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (3x2) Herunterladen 1970-GD25WQ20eeigrtr 3.000 104 MHz Nicht Flüchtig 2mbit 7 ns Blitz 256k x 8 Spi - quad i/o 120 µs, 4 ms
GD25LQ80ETIGR GigaDevice Semiconductor (HK) Limited GD25LQ80Tigig 0,3786
RFQ
ECAD 9730 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop Herunterladen 1970-GD25LQ80ETIGRTR 3.000 133 MHz Nicht Flüchtig 8mbit 6 ns Blitz 1m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD5F4GM8REWIGY GigaDevice Semiconductor (HK) Limited GD5F4GM8REWIGY 6.2510
RFQ
ECAD 1422 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (5x6) Herunterladen 1970-GD5F4GM8REWIGY 5.700 104 MHz Nicht Flüchtig 4Gbit 9 ns Blitz 1g x 4 Spi - quad i/o, dtr 600 µs
GD25LF64EQEGR GigaDevice Semiconductor (HK) Limited GD25LF64EQegr 1.2636
RFQ
ECAD 2830 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LF Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-XDFN Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (4x4) Herunterladen 1970-GD25LF64EQegrtr 3.000 166 MHz Nicht Flüchtig 64Mbit 5.5 ns Blitz 8m x 8 Spi - quad i/o, qpi 100 µs, 4 ms
GD25LT256EYAGR GigaDevice Semiconductor (HK) Limited GD25LT256EYAGR 5.8677
RFQ
ECAD 2495 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LT Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (6x8) - - - 1970-GD25LT256EYAGRTR 3.000 166 MHz Nicht Flüchtig 256mbit 6 ns Blitz 32m x 8 Spi - quad i/o, qpi, dtr 140 µs, 3 ms
GD25LD20EEIGR GigaDevice Semiconductor (HK) Limited GD25LD20EEIGR 0,2783
RFQ
ECAD 8063 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (3x2) Herunterladen 1970-GD25LD20EEIGRTRT 3.000 50 MHz Nicht Flüchtig 2mbit 12 ns Blitz 256k x 8 Spi - dual i/o 100 µs, 6 ms
GD25WQ32EEIGR GigaDevice Semiconductor (HK) Limited GD25WQ32EEIGR 0,7582
RFQ
ECAD 6803 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (3x2) Herunterladen 1970-GD25WQ32EEIGRTR 3.000 104 MHz Nicht Flüchtig 32Mbit 8 ns Blitz 4m x 8 Spi - quad i/o 120 µs, 4 ms
GD55T01GEBIRY GigaDevice Semiconductor (HK) Limited GD55T01GEBIRY 10.7060
RFQ
ECAD 3098 0.00000000 Gigadevice Semiconductor (HK) Limited GD55T Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 2,7 V ~ 3,6 V. 24-TFBGA (6x8) - - - 1970-GD55T01GEBIRY 4.800 200 MHz Nicht Flüchtig 1Gbit Blitz 128 MX 8 Spi - quad i/o, dtr - - -
GD25X512MEBIRY GigaDevice Semiconductor (HK) Limited GD25X512Mebiry 6.2111
RFQ
ECAD 7004 0.00000000 Gigadevice Semiconductor (HK) Limited GD25X Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 2,7 V ~ 3,6 V. 24-TFBGA (6x8) - - - 1970-GD25x512Mebiry 4.800 200 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - oktal i/o - - -
GD25LQ64EQAGR GigaDevice Semiconductor (HK) Limited GD25LQ64EQAGR 1.5582
RFQ
ECAD 3969 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-XDFN Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (4x4) - - - 1970-GD25LQ64EQAGRTR 3.000 133 MHz Nicht Flüchtig 64Mbit 6 ns Blitz 8m x 8 Spi - quad i/o, qpi 100 µs, 4 ms
GD25D40ETIGR GigaDevice Semiconductor (HK) Limited GD25D40Tigig 0,2564
RFQ
ECAD 7488 0.00000000 Gigadevice Semiconductor (HK) Limited GD25d Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25D40ETIGRTR 3.000 104 MHz Nicht Flüchtig 4mbit 6 ns Blitz 512k x 8 Spi - dual i/o 50 µs, 4 ms
GD25Q64EQIGR GigaDevice Semiconductor (HK) Limited GD25Q64EQIGR 0,8181
RFQ
ECAD 5714 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XDFN Exponierte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-uson (4x4) Herunterladen 1970-GD25Q64eqigrtr 3.000 133 MHz Nicht Flüchtig 64Mbit 7 ns Blitz 8m x 8 Spi - quad i/o 70 µs, 2,4 ms
GD55LB02GEBJRY GigaDevice Semiconductor (HK) Limited GD55LB02GEBJRY 22.0514
RFQ
ECAD 5849 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LB Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 1,65 V ~ 2 V 24-TFBGA (6x8) Herunterladen 1970-GD55LB02GEBJRY 4.800 133 MHz Nicht Flüchtig 2Gbit Blitz 256 mx 8 Spi - quad i/o, qpi, dtr - - -
GD25R512MEFIRR GigaDevice Semiconductor (HK) Limited GD25R512Mefirr 4.9140
RFQ
ECAD 1564 0.00000000 Gigadevice Semiconductor (HK) Limited GD25R Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 16-so-sop - - - 1970-GD25R512Mefirrtr 1.000 200 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, dtr - - -
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus