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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Technologie SPANNUNG - Verrorane LEEFERANTENGERATEPAKET Datenblatt Andere Namen Htsus Standardpaket Taktfrequenz Speichertyp Speichergrö Zugriffszeit Speicherformat Speicherorganisation Speicherschnittstelle Zykluszeitscheiben - Würze, Site
GD9FS8G8E3ALGJ GigaDevice Semiconductor (HK) Limited Gd9fs8g8e3algj 17.9949
RFQ
ECAD 2667 0.00000000 Gigadevice Semiconductor (HK) Limited - - - Tablett Aktiv Herunterladen 1970-GD9FS8G8E3Algj 2.100
GD55LX02GEB2RY GigaDevice Semiconductor (HK) Limited GD55LX02GEB2RY 41.2965
RFQ
ECAD 8222 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LX Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 1,65 V ~ 2 V 24-TFBGA (6x8) - - - 1970-GD55LX02GEB2RY 4.800 166 MHz Nicht Flüchtig 2Gbit Blitz 256 mx 8 Spi - oktal i/o, dtr - - -
GD25LF64ENEGR GigaDevice Semiconductor (HK) Limited GD25LF64Negr 1.2636
RFQ
ECAD 5534 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LF Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (3x4) Herunterladen 1970-GD25LF64Negrtr 3.000 166 MHz Nicht Flüchtig 64Mbit 5.5 ns Blitz 8m x 8 Spi - quad i/o, qpi 100 µs, 4 ms
GD25LH16ENIGR GigaDevice Semiconductor (HK) Limited GD25LH16enigr 0,6080
RFQ
ECAD 6672 0.00000000 Gigadevice Semiconductor (HK) Limited - - - Band & Rollen (TR) Aktiv - - - 1970-GD25LH16enigrtr 3.000
GD25F256FFIRR GigaDevice Semiconductor (HK) Limited GD25F256ffirr 2.3755
RFQ
ECAD 2196 0.00000000 Gigadevice Semiconductor (HK) Limited GD25F Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 16-so-sop - - - 1970-GD25F256ffirrtr 1.000 200 MHz Nicht Flüchtig 256mbit Blitz 32m x 8 Spi - quad i/o - - -
GD55LT01GEY2GY GigaDevice Semiconductor (HK) Limited GD55LT01GEY2GY 16.9841
RFQ
ECAD 7137 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LT Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (6x8) - - - 1970-GD55LT01GEY2GY 4.800 Nicht Flüchtig 1Gbit Blitz 128 MX 8 Spi - quad i/o, qpi, dtr - - -
GD55LE511MEWIGR GigaDevice Semiconductor (HK) Limited GD55LE511Mewig 4.3329
RFQ
ECAD 6027 0.00000000 Gigadevice Semiconductor (HK) Limited - - - Band & Rollen (TR) Aktiv - - - 1970-GD55LE511Mewigtr 3.000
GD25WD10CKIGR GigaDevice Semiconductor (HK) Limited GD25WD10CKIG 0,3167
RFQ
ECAD 2603 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (1,5x1,5) Herunterladen 1970-GD25WD10CKIGRTR 3.000 100 MHz Nicht Flüchtig 1Mbit 12 ns Blitz 128k x 8 Spi - dual i/o 55 µs, 6 ms
GD25B16CS2GR GigaDevice Semiconductor (HK) Limited GD25B16CS2GR 0,7772
RFQ
ECAD 3277 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop - - - 1970-GD25B16CS2Grtr 2.000 Nicht Flüchtig 16mbit Blitz 2m x 8 Spi - quad i/o - - -
GD5F2GQ5REYJGR GigaDevice Semiconductor (HK) Limited GD5F2GQ5REYJGR 4.9238
RFQ
ECAD 1026 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (6x8) Herunterladen 1970-GD5F2GQ5REYJGRTR 3.000 80 MHz Nicht Flüchtig 2Gbit 11 ns Blitz 256 mx 8 Spi - quad i/o 600 µs
GD25B256EFIGR GigaDevice Semiconductor (HK) Limited GD25B256EFIGR 2.3755
RFQ
ECAD 7941 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 16-so-sop Herunterladen 1970-GD25B256EFIGRTR 1.000 Nicht Flüchtig 256mbit Blitz 32m x 8 Spi - quad i/o - - -
GD5F2GQ5RFZIGY GigaDevice Semiconductor (HK) Limited GD5F2GQ5RFZIGY 4.3225
RFQ
ECAD 4426 0.00000000 Gigadevice Semiconductor (HK) Limited - - - Tablett Aktiv - - - 1970-GD5F2GQ5RFZigy 4.800
GD25Q64EWEGR GigaDevice Semiconductor (HK) Limited GD25Q64eweg 1.1653
RFQ
ECAD 9016 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (5x6) Herunterladen 1970-GD25Q64EWegrtr 3.000 133 MHz Nicht Flüchtig 64Mbit 7 ns Blitz 8m x 8 Spi - quad i/o 140 µs, 4 ms
GD5F2GQ5RFBIGY GigaDevice Semiconductor (HK) Limited GD5F2GQ5RFBIGY 4.3225
RFQ
ECAD 7761 0.00000000 Gigadevice Semiconductor (HK) Limited - - - Tablett Aktiv - - - 1970-GD5F2GQ5RFBIGY 4.800
GD25WD20ETIGR GigaDevice Semiconductor (HK) Limited GD25WD20Tigig 0,2490
RFQ
ECAD 4515 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25WD20ETIGRTR 3.000 104 MHz Nicht Flüchtig 2mbit 6 ns Blitz 256k x 8 Spi - dual i/o 100 µs, 6 ms
GD25LQ80ESIGR GigaDevice Semiconductor (HK) Limited GD25LQ80SIGR 0,3786
RFQ
ECAD 2065 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop Herunterladen 1970-GD25LQ80Sigrtr 2.000 133 MHz Nicht Flüchtig 8mbit 6 ns Blitz 1m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD5F2GQ5REY2GY GigaDevice Semiconductor (HK) Limited GD5F2GQ5REY2GY 6.4904
RFQ
ECAD 4881 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (6x8) - - - 1970-GD5F2GQ5REY2GY 4.800 80 MHz Nicht Flüchtig 2Gbit 11 ns Blitz 512 mx 4 Spi - quad i/o, dtr 600 µs
GD5F2GQ5REYIGR GigaDevice Semiconductor (HK) Limited GD5F2GQ5REYIGR 4.1912
RFQ
ECAD 3314 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (6x8) Herunterladen 1970-GD5F2GQ5REYIGRTR 3.000 80 MHz Nicht Flüchtig 2Gbit 11 ns Blitz 256 mx 8 Spi - quad i/o 600 µs
GD25Q64ETJGR GigaDevice Semiconductor (HK) Limited GD25Q64TJGR 0,8705
RFQ
ECAD 5697 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25Q64TJGrtr 3.000 133 MHz Nicht Flüchtig 64Mbit 7 ns Blitz 8m x 8 Spi - quad i/o 140 µs, 4 ms
GD25LE32ENIGR GigaDevice Semiconductor (HK) Limited Gd25le32enigr 0,7090
RFQ
ECAD 6615 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LE Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (3x4) Herunterladen 1970-GD25LE32Nigrtr 3.000 133 MHz Nicht Flüchtig 32Mbit 6 ns Blitz 4m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25B512MEYIGR GigaDevice Semiconductor (HK) Limited GD25B512MEYIGR 4.3264
RFQ
ECAD 9970 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) Herunterladen 1970-GD25B512Meyigrtr 3.000 133 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD55LT02GEB2RY GigaDevice Semiconductor (HK) Limited GD55LT02GEB2RY 32.3250
RFQ
ECAD 3679 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LT Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 1,65 V ~ 2 V 24-TFBGA (6x8) - - - 1970-GD55LT02GEB2RY 4.800 166 MHz Nicht Flüchtig 2Gbit Blitz 256 mx 8 Spi - quad i/o, qpi, dtr - - -
GD5F1GQ5REY2GY GigaDevice Semiconductor (HK) Limited Gd5f1gq5rey2gy 3.7639
RFQ
ECAD 1158 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (6x8) - - - 1970-GD5F1GQ5REY2GY 4.800 104 MHz Nicht Flüchtig 1Gbit 9,5 ns Blitz 256 mx 4 Spi - quad i/o, dtr 600 µs
GD25T512MEYIGR GigaDevice Semiconductor (HK) Limited GD25T512meyigig 5.2458
RFQ
ECAD 5902 0.00000000 Gigadevice Semiconductor (HK) Limited GD25T Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD25T512Meyigrtr 3.000 200 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, dtr - - -
GD25LQ40ESIGR GigaDevice Semiconductor (HK) Limited GD25LQ40SIGR 0,3619
RFQ
ECAD 2530 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop - - - 1970-GD25LQ40Sigrtr 2.000 133 MHz Nicht Flüchtig 4mbit 6 ns Blitz 512k x 8 Spi - quad i/o 60 µs, 2,4 ms
GD25Q16ENEGR GigaDevice Semiconductor (HK) Limited GD25Q16enegr 0,8143
RFQ
ECAD 2104 0.00000000 Gigadevice Semiconductor (HK) Limited GD25Q Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-uson (3x4) Herunterladen 1970-GD25Q16enegrtr 3.000 133 MHz Nicht Flüchtig 16mbit 7 ns Blitz 2m x 8 Spi - quad i/o 140 µs, 4 ms
GD25B256EFIRY GigaDevice Semiconductor (HK) Limited GD25B256EFIRY 2.4461
RFQ
ECAD 9293 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 16-soic (0,295 ", 7,50 mm BreiTe) Flash - Nor (SLC) 2,7 V ~ 3,6 V. 16-so-sop Herunterladen 1970-GD25B256EFIRY 1.760 Nicht Flüchtig 256mbit Blitz 32m x 8 Spi - quad i/o - - -
GD55B01GEY2GY GigaDevice Semiconductor (HK) Limited GD55B01GEY2GY 13.1250
RFQ
ECAD 2399 0.00000000 Gigadevice Semiconductor (HK) Limited GD55B Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD55B01GEY2GY 8542.32.0071 4.800 133 MHz Nicht Flüchtig 1Gbit Blitz 128 MX 8 Spi - quad i/o, qpi, dtr - - -
GD55LF511MEWIGR GigaDevice Semiconductor (HK) Limited GD55LF511Mewig 4.3329
RFQ
ECAD 5111 0.00000000 Gigadevice Semiconductor (HK) Limited - - - Band & Rollen (TR) Aktiv - - - 1970-GD55LF511Mewigrtr 3.000
GD55B02GEB2RY GigaDevice Semiconductor (HK) Limited GD55B02GEB2RY 26.6125
RFQ
ECAD 7728 0.00000000 Gigadevice Semiconductor (HK) Limited GD55B Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 2,7 V ~ 3,6 V. 24-TFBGA (6x8) - - - 1970-GD55B02GEB2RY 4.800 133 MHz Nicht Flüchtig 2Gbit Blitz 256 mx 8 Spi - quad i/o, qpi, dtr - - -
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus