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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Technologie | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | Andere Namen | Htsus | Standardpaket | Taktfrequenz | Speichertyp | Speichergrö | Zugriffszeit | Speicherformat | Speicherorganisation | Speicherschnittstelle | Zykluszeitscheiben - Würze, Site |
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![]() | Gd9fs8g8e3algj | 17.9949 | ![]() | 2667 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | - - - | Tablett | Aktiv | Herunterladen | 1970-GD9FS8G8E3Algj | 2.100 | ||||||||||||||||
![]() | GD55LX02GEB2RY | 41.2965 | ![]() | 8222 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55LX | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 24-Tbga | Flash - Nor (SLC) | 1,65 V ~ 2 V | 24-TFBGA (6x8) | - - - | 1970-GD55LX02GEB2RY | 4.800 | 166 MHz | Nicht Flüchtig | 2Gbit | Blitz | 256 mx 8 | Spi - oktal i/o, dtr | - - - | |||
![]() | GD25LF64Negr | 1.2636 | ![]() | 5534 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LF | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-udfn Exponierte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-uson (3x4) | Herunterladen | 1970-GD25LF64Negrtr | 3.000 | 166 MHz | Nicht Flüchtig | 64Mbit | 5.5 ns | Blitz | 8m x 8 | Spi - quad i/o, qpi | 100 µs, 4 ms | ||
![]() | GD25LH16enigr | 0,6080 | ![]() | 6672 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | - - - | Band & Rollen (TR) | Aktiv | - - - | 1970-GD25LH16enigrtr | 3.000 | ||||||||||||||||
![]() | GD25F256ffirr | 2.3755 | ![]() | 2196 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25F | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 16-soic (0,295 ", 7,50 mm BreiTe) | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 16-so-sop | - - - | 1970-GD25F256ffirrtr | 1.000 | 200 MHz | Nicht Flüchtig | 256mbit | Blitz | 32m x 8 | Spi - quad i/o | - - - | |||
![]() | GD55LT01GEY2GY | 16.9841 | ![]() | 7137 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55LT | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Wson (6x8) | - - - | 1970-GD55LT01GEY2GY | 4.800 | Nicht Flüchtig | 1Gbit | Blitz | 128 MX 8 | Spi - quad i/o, qpi, dtr | - - - | ||||
![]() | GD55LE511Mewig | 4.3329 | ![]() | 6027 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | - - - | Band & Rollen (TR) | Aktiv | - - - | 1970-GD55LE511Mewigtr | 3.000 | ||||||||||||||||
![]() | GD25WD10CKIG | 0,3167 | ![]() | 2603 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WD | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-uson (1,5x1,5) | Herunterladen | 1970-GD25WD10CKIGRTR | 3.000 | 100 MHz | Nicht Flüchtig | 1Mbit | 12 ns | Blitz | 128k x 8 | Spi - dual i/o | 55 µs, 6 ms | ||
![]() | GD25B16CS2GR | 0,7772 | ![]() | 3277 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25B | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Sop | - - - | 1970-GD25B16CS2Grtr | 2.000 | Nicht Flüchtig | 16mbit | Blitz | 2m x 8 | Spi - quad i/o | - - - | ||||
![]() | GD5F2GQ5REYJGR | 4.9238 | ![]() | 1026 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD5f | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nand (SLC) | 1,7 V ~ 2 V | 8-Wson (6x8) | Herunterladen | 1970-GD5F2GQ5REYJGRTR | 3.000 | 80 MHz | Nicht Flüchtig | 2Gbit | 11 ns | Blitz | 256 mx 8 | Spi - quad i/o | 600 µs | ||
![]() | GD25B256EFIGR | 2.3755 | ![]() | 7941 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25B | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 16-soic (0,295 ", 7,50 mm BreiTe) | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 16-so-sop | Herunterladen | 1970-GD25B256EFIGRTR | 1.000 | Nicht Flüchtig | 256mbit | Blitz | 32m x 8 | Spi - quad i/o | - - - | ||||
![]() | GD5F2GQ5RFZIGY | 4.3225 | ![]() | 4426 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | - - - | Tablett | Aktiv | - - - | 1970-GD5F2GQ5RFZigy | 4.800 | ||||||||||||||||
![]() | GD25Q64eweg | 1.1653 | ![]() | 9016 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25Q | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (5x6) | Herunterladen | 1970-GD25Q64EWegrtr | 3.000 | 133 MHz | Nicht Flüchtig | 64Mbit | 7 ns | Blitz | 8m x 8 | Spi - quad i/o | 140 µs, 4 ms | ||
![]() | GD5F2GQ5RFBIGY | 4.3225 | ![]() | 7761 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | - - - | Tablett | Aktiv | - - - | 1970-GD5F2GQ5RFBIGY | 4.800 | ||||||||||||||||
![]() | GD25WD20Tigig | 0,2490 | ![]() | 4515 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WD | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-Sop | Herunterladen | 1970-GD25WD20ETIGRTR | 3.000 | 104 MHz | Nicht Flüchtig | 2mbit | 6 ns | Blitz | 256k x 8 | Spi - dual i/o | 100 µs, 6 ms | ||
![]() | GD25LQ80SIGR | 0,3786 | ![]() | 2065 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Sop | Herunterladen | 1970-GD25LQ80Sigrtr | 2.000 | 133 MHz | Nicht Flüchtig | 8mbit | 6 ns | Blitz | 1m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | ||
![]() | GD5F2GQ5REY2GY | 6.4904 | ![]() | 4881 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD5f | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nand (SLC) | 1,7 V ~ 2 V | 8-Wson (6x8) | - - - | 1970-GD5F2GQ5REY2GY | 4.800 | 80 MHz | Nicht Flüchtig | 2Gbit | 11 ns | Blitz | 512 mx 4 | Spi - quad i/o, dtr | 600 µs | ||
![]() | GD5F2GQ5REYIGR | 4.1912 | ![]() | 3314 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD5f | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nand (SLC) | 1,7 V ~ 2 V | 8-Wson (6x8) | Herunterladen | 1970-GD5F2GQ5REYIGRTR | 3.000 | 80 MHz | Nicht Flüchtig | 2Gbit | 11 ns | Blitz | 256 mx 8 | Spi - quad i/o | 600 µs | ||
![]() | GD25Q64TJGR | 0,8705 | ![]() | 5697 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25Q | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Sop | Herunterladen | 1970-GD25Q64TJGrtr | 3.000 | 133 MHz | Nicht Flüchtig | 64Mbit | 7 ns | Blitz | 8m x 8 | Spi - quad i/o | 140 µs, 4 ms | ||
![]() | Gd25le32enigr | 0,7090 | ![]() | 6615 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LE | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-udfn Exponierte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-uson (3x4) | Herunterladen | 1970-GD25LE32Nigrtr | 3.000 | 133 MHz | Nicht Flüchtig | 32Mbit | 6 ns | Blitz | 4m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | ||
![]() | GD25B512MEYIGR | 4.3264 | ![]() | 9970 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25B | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | Herunterladen | 1970-GD25B512Meyigrtr | 3.000 | 133 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o, qpi, dtr | - - - | |||
![]() | GD55LT02GEB2RY | 32.3250 | ![]() | 3679 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55LT | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 24-Tbga | Flash - Nor (SLC) | 1,65 V ~ 2 V | 24-TFBGA (6x8) | - - - | 1970-GD55LT02GEB2RY | 4.800 | 166 MHz | Nicht Flüchtig | 2Gbit | Blitz | 256 mx 8 | Spi - quad i/o, qpi, dtr | - - - | |||
![]() | Gd5f1gq5rey2gy | 3.7639 | ![]() | 1158 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD5f | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nand (SLC) | 1,7 V ~ 2 V | 8-Wson (6x8) | - - - | 1970-GD5F1GQ5REY2GY | 4.800 | 104 MHz | Nicht Flüchtig | 1Gbit | 9,5 ns | Blitz | 256 mx 4 | Spi - quad i/o, dtr | 600 µs | ||
![]() | GD25T512meyigig | 5.2458 | ![]() | 5902 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25T | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | - - - | 1970-GD25T512Meyigrtr | 3.000 | 200 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o, dtr | - - - | |||
![]() | GD25LQ40SIGR | 0,3619 | ![]() | 2530 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Sop | - - - | 1970-GD25LQ40Sigrtr | 2.000 | 133 MHz | Nicht Flüchtig | 4mbit | 6 ns | Blitz | 512k x 8 | Spi - quad i/o | 60 µs, 2,4 ms | ||
![]() | GD25Q16enegr | 0,8143 | ![]() | 2104 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25Q | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-udfn Exponierte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-uson (3x4) | Herunterladen | 1970-GD25Q16enegrtr | 3.000 | 133 MHz | Nicht Flüchtig | 16mbit | 7 ns | Blitz | 2m x 8 | Spi - quad i/o | 140 µs, 4 ms | ||
![]() | GD25B256EFIRY | 2.4461 | ![]() | 9293 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25B | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 16-soic (0,295 ", 7,50 mm BreiTe) | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 16-so-sop | Herunterladen | 1970-GD25B256EFIRY | 1.760 | Nicht Flüchtig | 256mbit | Blitz | 32m x 8 | Spi - quad i/o | - - - | ||||
![]() | GD55B01GEY2GY | 13.1250 | ![]() | 2399 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55B | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | - - - | 1970-GD55B01GEY2GY | 8542.32.0071 | 4.800 | 133 MHz | Nicht Flüchtig | 1Gbit | Blitz | 128 MX 8 | Spi - quad i/o, qpi, dtr | - - - | ||
![]() | GD55LF511Mewig | 4.3329 | ![]() | 5111 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | - - - | Band & Rollen (TR) | Aktiv | - - - | 1970-GD55LF511Mewigrtr | 3.000 | ||||||||||||||||
![]() | GD55B02GEB2RY | 26.6125 | ![]() | 7728 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55B | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 24-Tbga | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 24-TFBGA (6x8) | - - - | 1970-GD55B02GEB2RY | 4.800 | 133 MHz | Nicht Flüchtig | 2Gbit | Blitz | 256 mx 8 | Spi - quad i/o, qpi, dtr | - - - |
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