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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Technologie | SPANNUNG - Verrorane | LEEFERANTENGERATEPAKET | Datenblatt | Andere Namen | Standardpaket | Taktfrequenz | Speichertyp | Speichergrö | Zugriffszeit | Speicherformat | Speicherorganisation | Speicherschnittstelle | Zykluszeitscheiben - Würze, Site |
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![]() | GD25LQ256DWAGY | 4.2161 | ![]() | 5956 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Tablett | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Wson (5x6) | - - - | 1970-GD25LQ256DWAGY | 5.700 | 104 MHz | Nicht Flüchtig | 256mbit | 6 ns | Blitz | 32m x 8 | Spi - quad i/o, qpi | 4 ms | |
![]() | GD25LQ255EBIRY | 2.2364 | ![]() | 6673 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 24-Tbga | Flash - Nor (SLC) | 1,65 V ~ 2 V | 24-TFBGA (6x8) | Herunterladen | 1970-GD25LQ255ebiry | 4.800 | 133 MHz | Nicht Flüchtig | 256mbit | Blitz | 32m x 8 | Spi - quad i/o, qpi | - - - | ||
![]() | GD9FS2G8F3AMGI | 4.7315 | ![]() | 9084 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD9f | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 48-TFSOP (0,724 ", 18.40 mm Breit) | Flash - Nand (SLC) | 1,7 V ~ 1,95 V. | 48-tsop i | Herunterladen | 1970-GD9FS2G8F3AMGI | 960 | Nicht Flüchtig | 2Gbit | 20 ns | Blitz | 256 mx 8 | Parallel | 25ns | ||
![]() | GD25LQ16ETJGR | 0,6115 | ![]() | 2224 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2,1 V. | 8-Sop | Herunterladen | 1970-GD25LQ16ETJGrtr | 3.000 | 133 MHz | Nicht Flüchtig | 16mbit | 6 ns | Blitz | 2m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | |
![]() | GD25LE80TIGIG | 0,3959 | ![]() | 1385 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LE | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Sop | Herunterladen | 1970-GD25LE80TIGRTR | 3.000 | 133 MHz | Nicht Flüchtig | 8mbit | 6 ns | Blitz | 1m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | |
![]() | GD25B512MEYIGY | 4.2560 | ![]() | 2864 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25B | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | Herunterladen | 1970-GD25B512Meyigy | 4.800 | 133 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o, qpi, dtr | - - - | ||
![]() | GD55LB01GEB2RY | 13.4000 | ![]() | 9389 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55LB | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 24-Tbga | Flash - Nor (SLC) | 1,65 V ~ 2 V | 24-TFBGA (6x8) | - - - | 1970-GD55LB01GEB2RY | 4.800 | 166 MHz | Nicht Flüchtig | 1Gbit | 6 ns | Blitz | 128 MX 8 | Spi - quad i/o, qpi, dtr | 140 µs, 2 ms | |
![]() | GD25WR256EYIGY | 2.6761 | ![]() | 6615 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WR | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-Wson (6x8) | - - - | 1970-GD25WR256EYIGY | 4.800 | 104 MHz | Nicht Flüchtig | 256mbit | Blitz | 32m x 8 | Spi - quad i/o | - - - | ||
![]() | GD25F256fbiry | 2.3163 | ![]() | 1615 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25F | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 24-Tbga | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 24-TFBGA (6x8) | - - - | 1970-GD25F256fbiry | 4.800 | 200 MHz | Nicht Flüchtig | 256mbit | Blitz | 32m x 8 | Spi - quad i/o | - - - | ||
![]() | GD25WQ16enigr | 0,6406 | ![]() | 4408 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-udfn Exponierte Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-uson (3x4) | Herunterladen | 1970-GD25WQ16enigrtr | 3.000 | 104 MHz | Nicht Flüchtig | 16mbit | 12 ns | Blitz | 2m x 8 | Spi - quad i/o | 120 µs, 4 ms | |
![]() | GD25WQ64Enigr | 0,8999 | ![]() | 8486 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-udfn Exponierte Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-uson (3x4) | Herunterladen | 1970-GD25WQ64Enigrtr | 3.000 | 104 MHz | Nicht Flüchtig | 64Mbit | 12 ns | Blitz | 8m x 8 | Spi - quad i/o | 120 µs, 4 ms | |
![]() | GD55WB512MEYIGR | 4.6218 | ![]() | 8554 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55WB | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-Wson (6x8) | - - - | 1970-GD55WB512meyigrtr | 3.000 | 104 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o | - - - | ||
![]() | GD25WQ64E3IGR | 0,9547 | ![]() | 5510 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 14-XFBGA, WLCSP | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 14-WLCSP | Herunterladen | 1970-GD25WQ64E3IGRTR | 3.000 | 104 MHz | Nicht Flüchtig | 64Mbit | 12 ns | Blitz | 8m x 8 | Spi - quad i/o | 120 µs, 4 ms | |
![]() | GD55LB01gebary | 16.3989 | ![]() | 9185 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD55LB | Tablett | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 24-Tbga | Flash - Nor (SLC) | 1,65 V ~ 2 V | 24-TFBGA (6x8) | - - - | 1970-GD55LB01gebary | 4.800 | 133 MHz | Nicht Flüchtig | 1Gbit | 6 ns | Blitz | 128 MX 8 | Spi - quad i/o, qpi, dtr | 140 µs, 2 ms | |
![]() | GD25LF32Engr | 0,9817 | ![]() | 9351 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LF | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-udfn Exponierte Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-uson (3x4) | Herunterladen | 1970-GD25LF32Enegrtr | 3.000 | 133 MHz | Nicht Flüchtig | 32Mbit | 5.5 ns | Blitz | 4m x 8 | Spi - quad i/o, qpi, dtr | 100 µs, 4 ms | |
![]() | GD25WD40CKIG | 0,3640 | ![]() | 5690 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WD | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-uson (1,5x1,5) | Herunterladen | 1970-GD25WD40CKIGRTR | 3.000 | 100 MHz | Nicht Flüchtig | 4mbit | 12 ns | Blitz | 512k x 8 | Spi - dual i/o | 97 µs, 6 ms | |
![]() | GD9FS2G8F3Algi | 4.7455 | ![]() | 9598 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD9f | Tablett | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 63-VFBGA | Flash - Nand (SLC) | 1,7 V ~ 1,95 V. | 63-FBGA (9x11) | Herunterladen | 1970-GD9FS2G8F3Algi | 2.100 | Nicht Flüchtig | 2Gbit | 20 ns | Blitz | 256 mx 8 | Parallel | 25ns | ||
![]() | GD25T512MEY2GR | 8.1203 | ![]() | 4811 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25T | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | - - - | 1970-GD25T512MEY2Grtr | 3.000 | 200 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o, dtr | - - - | ||
![]() | GD25LQ16Enagr | 1.0670 | ![]() | 2163 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-udfn Exponierte Pad | Flash - Nor (SLC) | 1,65 V ~ 2,1 V. | 8-uson (3x4) | - - - | 1970-GD25LQ16enagrtr | 3.000 | 133 MHz | Nicht Flüchtig | 16mbit | 6 ns | Blitz | 2m x 8 | Spi - quad i/o, qpi | 100 µs, 4 ms | |
![]() | Gd25le16eeer | 0,7582 | ![]() | 2735 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LE | Band & Rollen (TR) | Aktiv | -40 ° C ~ 125 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-uson (3x2) | Herunterladen | 1970-GD25LE16EEEGRTR | 3.000 | 133 MHz | Nicht Flüchtig | 16mbit | 6 ns | Blitz | 2m x 8 | Spi - quad i/o, qpi | 100 µs, 4 ms | |
![]() | GD5F4GQ6REYIGR | 6.7891 | ![]() | 7958 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD5f | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nand (SLC) | 1,7 V ~ 2 V | 8-Wson (6x8) | Herunterladen | 1970-GD5F4GQ6REYIGRTR | 3.000 | 80 MHz | Nicht Flüchtig | 4Gbit | 11 ns | Blitz | 512 MX 8 | Spi - quad i/o | 600 µs | |
![]() | GD25LQ64ET2GY | 1.2776 | ![]() | 6914 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Tablett | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Sop | - - - | 1970-GD25LQ64ET2GY | 4,320 | 133 MHz | Nicht Flüchtig | 64Mbit | 6 ns | Blitz | 8m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | |
![]() | GD25LQ64ES2GR | 1.2272 | ![]() | 9109 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Sop | - - - | 1970-GD25LQ64ES2Grtr | 2.000 | 133 MHz | Nicht Flüchtig | 64Mbit | 6 ns | Blitz | 8m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms | |
![]() | GD25F128SIGY | 1.1934 | ![]() | 7509 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | - - - | Tablett | Aktiv | - - - | 1970-GD25F128esigy | 3.000 | |||||||||||||||
![]() | GD25WD05CKIG | 0,3016 | ![]() | 2332 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WD | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-uson (1,5x1,5) | Herunterladen | 1970-GD25WD05CKIGRTR | 3.000 | 100 MHz | Nicht Flüchtig | 512Kbit | 12 ns | Blitz | 64k x 8 | Spi - dual i/o | 55 µs, 6 ms | |
![]() | GD25R128EYIGR | 1.6388 | ![]() | 3645 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25R | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | - - - | 1970-GD25R128EYIGRTR | 3.000 | 200 MHz | Nicht Flüchtig | 128mbit | Blitz | 16 mx 8 | Spi - quad i/o | - - - | ||
![]() | GD25WQ16ESIGR | 0,5387 | ![]() | 6785 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25WQ | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 3,6 V. | 8-Sop | Herunterladen | 1970-GD25WQ16ESIGRTR | 2.000 | 104 MHz | Nicht Flüchtig | 16mbit | 12 ns | Blitz | 2m x 8 | Spi - quad i/o | 120 µs, 4 ms | |
![]() | GD25B512MEY2GR | 6.5028 | ![]() | 1666 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25B | Band & Rollen (TR) | Aktiv | -40 ° C ~ 105 ° C (TA) | Oberflächenhalterung | 8-WDFN Exponte Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-Wson (6x8) | - - - | 1970-GD25B512MEY2Grtr | 3.000 | 133 MHz | Nicht Flüchtig | 512mbit | Blitz | 64m x 8 | Spi - quad i/o, qpi, dtr | - - - | ||
![]() | GD25D40CKIG | 0,3368 | ![]() | 1826 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25d | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-XFDFN Exposed Pad | Flash - Nor (SLC) | 2,7 V ~ 3,6 V. | 8-uson (1,5x1,5) | Herunterladen | 1970-GD25D40CKIGRTR | 3.000 | 104 MHz | Nicht Flüchtig | 4mbit | 6 ns | Blitz | 512k x 8 | Spi - dual i/o | 50 µs, 4 ms | |
![]() | GD25LE64SIGR | 0,8045 | ![]() | 7779 | 0.00000000 | Gigadevice Semiconductor (HK) Limited | GD25LE | Band & Rollen (TR) | Aktiv | -40 ° C ~ 85 ° C (TA) | Oberflächenhalterung | 8-Soic (0,209 ", 5,30 mm Breit) | Flash - Nor (SLC) | 1,65 V ~ 2 V | 8-Sop | Herunterladen | 1970-GD25LE64Sigrtr | 2.000 | 133 MHz | Nicht Flüchtig | 64Mbit | 6 ns | Blitz | 8m x 8 | Spi - quad i/o, qpi | 60 µs, 2,4 ms |
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