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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Technologie SPANNUNG - Verrorane LEEFERANTENGERATEPAKET Datenblatt Andere Namen Standardpaket Taktfrequenz Speichertyp Speichergrö Zugriffszeit Speicherformat Speicherorganisation Speicherschnittstelle Zykluszeitscheiben - Würze, Site
GD25LQ256DWAGY GigaDevice Semiconductor (HK) Limited GD25LQ256DWAGY 4.2161
RFQ
ECAD 5956 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Tablett Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-Wson (5x6) - - - 1970-GD25LQ256DWAGY 5.700 104 MHz Nicht Flüchtig 256mbit 6 ns Blitz 32m x 8 Spi - quad i/o, qpi 4 ms
GD25LQ255EBIRY GigaDevice Semiconductor (HK) Limited GD25LQ255EBIRY 2.2364
RFQ
ECAD 6673 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 1,65 V ~ 2 V 24-TFBGA (6x8) Herunterladen 1970-GD25LQ255ebiry 4.800 133 MHz Nicht Flüchtig 256mbit Blitz 32m x 8 Spi - quad i/o, qpi - - -
GD9FS2G8F3AMGI GigaDevice Semiconductor (HK) Limited GD9FS2G8F3AMGI 4.7315
RFQ
ECAD 9084 0.00000000 Gigadevice Semiconductor (HK) Limited GD9f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 48-TFSOP (0,724 ", 18.40 mm Breit) Flash - Nand (SLC) 1,7 V ~ 1,95 V. 48-tsop i Herunterladen 1970-GD9FS2G8F3AMGI 960 Nicht Flüchtig 2Gbit 20 ns Blitz 256 mx 8 Parallel 25ns
GD25LQ16ETJGR GigaDevice Semiconductor (HK) Limited GD25LQ16ETJGR 0,6115
RFQ
ECAD 2224 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2,1 V. 8-Sop Herunterladen 1970-GD25LQ16ETJGrtr 3.000 133 MHz Nicht Flüchtig 16mbit 6 ns Blitz 2m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25LE80ETIGR GigaDevice Semiconductor (HK) Limited GD25LE80TIGIG 0,3959
RFQ
ECAD 1385 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LE Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop Herunterladen 1970-GD25LE80TIGRTR 3.000 133 MHz Nicht Flüchtig 8mbit 6 ns Blitz 1m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25B512MEYIGY GigaDevice Semiconductor (HK) Limited GD25B512MEYIGY 4.2560
RFQ
ECAD 2864 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) Herunterladen 1970-GD25B512Meyigy 4.800 133 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD55LB01GEB2RY GigaDevice Semiconductor (HK) Limited GD55LB01GEB2RY 13.4000
RFQ
ECAD 9389 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LB Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 1,65 V ~ 2 V 24-TFBGA (6x8) - - - 1970-GD55LB01GEB2RY 4.800 166 MHz Nicht Flüchtig 1Gbit 6 ns Blitz 128 MX 8 Spi - quad i/o, qpi, dtr 140 µs, 2 ms
GD25WR256EYIGY GigaDevice Semiconductor (HK) Limited GD25WR256EYIGY 2.6761
RFQ
ECAD 6615 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WR Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD25WR256EYIGY 4.800 104 MHz Nicht Flüchtig 256mbit Blitz 32m x 8 Spi - quad i/o - - -
GD25F256FBIRY GigaDevice Semiconductor (HK) Limited GD25F256fbiry 2.3163
RFQ
ECAD 1615 0.00000000 Gigadevice Semiconductor (HK) Limited GD25F Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 2,7 V ~ 3,6 V. 24-TFBGA (6x8) - - - 1970-GD25F256fbiry 4.800 200 MHz Nicht Flüchtig 256mbit Blitz 32m x 8 Spi - quad i/o - - -
GD25WQ16ENIGR GigaDevice Semiconductor (HK) Limited GD25WQ16enigr 0,6406
RFQ
ECAD 4408 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (3x4) Herunterladen 1970-GD25WQ16enigrtr 3.000 104 MHz Nicht Flüchtig 16mbit 12 ns Blitz 2m x 8 Spi - quad i/o 120 µs, 4 ms
GD25WQ64ENIGR GigaDevice Semiconductor (HK) Limited GD25WQ64Enigr 0,8999
RFQ
ECAD 8486 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (3x4) Herunterladen 1970-GD25WQ64Enigrtr 3.000 104 MHz Nicht Flüchtig 64Mbit 12 ns Blitz 8m x 8 Spi - quad i/o 120 µs, 4 ms
GD55WB512MEYIGR GigaDevice Semiconductor (HK) Limited GD55WB512MEYIGR 4.6218
RFQ
ECAD 8554 0.00000000 Gigadevice Semiconductor (HK) Limited GD55WB Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD55WB512meyigrtr 3.000 104 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o - - -
GD25WQ64E3IGR GigaDevice Semiconductor (HK) Limited GD25WQ64E3IGR 0,9547
RFQ
ECAD 5510 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 14-XFBGA, WLCSP Flash - Nor (SLC) 1,65 V ~ 3,6 V. 14-WLCSP Herunterladen 1970-GD25WQ64E3IGRTR 3.000 104 MHz Nicht Flüchtig 64Mbit 12 ns Blitz 8m x 8 Spi - quad i/o 120 µs, 4 ms
GD55LB01GEBARY GigaDevice Semiconductor (HK) Limited GD55LB01gebary 16.3989
RFQ
ECAD 9185 0.00000000 Gigadevice Semiconductor (HK) Limited GD55LB Tablett Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 24-Tbga Flash - Nor (SLC) 1,65 V ~ 2 V 24-TFBGA (6x8) - - - 1970-GD55LB01gebary 4.800 133 MHz Nicht Flüchtig 1Gbit 6 ns Blitz 128 MX 8 Spi - quad i/o, qpi, dtr 140 µs, 2 ms
GD25LF32ENEGR GigaDevice Semiconductor (HK) Limited GD25LF32Engr 0,9817
RFQ
ECAD 9351 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LF Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (3x4) Herunterladen 1970-GD25LF32Enegrtr 3.000 133 MHz Nicht Flüchtig 32Mbit 5.5 ns Blitz 4m x 8 Spi - quad i/o, qpi, dtr 100 µs, 4 ms
GD25WD40CKIGR GigaDevice Semiconductor (HK) Limited GD25WD40CKIG 0,3640
RFQ
ECAD 5690 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (1,5x1,5) Herunterladen 1970-GD25WD40CKIGRTR 3.000 100 MHz Nicht Flüchtig 4mbit 12 ns Blitz 512k x 8 Spi - dual i/o 97 µs, 6 ms
GD9FS2G8F3ALGI GigaDevice Semiconductor (HK) Limited GD9FS2G8F3Algi 4.7455
RFQ
ECAD 9598 0.00000000 Gigadevice Semiconductor (HK) Limited GD9f Tablett Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 63-VFBGA Flash - Nand (SLC) 1,7 V ~ 1,95 V. 63-FBGA (9x11) Herunterladen 1970-GD9FS2G8F3Algi 2.100 Nicht Flüchtig 2Gbit 20 ns Blitz 256 mx 8 Parallel 25ns
GD25T512MEY2GR GigaDevice Semiconductor (HK) Limited GD25T512MEY2GR 8.1203
RFQ
ECAD 4811 0.00000000 Gigadevice Semiconductor (HK) Limited GD25T Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD25T512MEY2Grtr 3.000 200 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, dtr - - -
GD25LQ16ENAGR GigaDevice Semiconductor (HK) Limited GD25LQ16Enagr 1.0670
RFQ
ECAD 2163 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-udfn Exponierte Pad Flash - Nor (SLC) 1,65 V ~ 2,1 V. 8-uson (3x4) - - - 1970-GD25LQ16enagrtr 3.000 133 MHz Nicht Flüchtig 16mbit 6 ns Blitz 2m x 8 Spi - quad i/o, qpi 100 µs, 4 ms
GD25LE16EEEGR GigaDevice Semiconductor (HK) Limited Gd25le16eeer 0,7582
RFQ
ECAD 2735 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LE Band & Rollen (TR) Aktiv -40 ° C ~ 125 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 2 V 8-uson (3x2) Herunterladen 1970-GD25LE16EEEGRTR 3.000 133 MHz Nicht Flüchtig 16mbit 6 ns Blitz 2m x 8 Spi - quad i/o, qpi 100 µs, 4 ms
GD5F4GQ6REYIGR GigaDevice Semiconductor (HK) Limited GD5F4GQ6REYIGR 6.7891
RFQ
ECAD 7958 0.00000000 Gigadevice Semiconductor (HK) Limited GD5f Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nand (SLC) 1,7 V ~ 2 V 8-Wson (6x8) Herunterladen 1970-GD5F4GQ6REYIGRTR 3.000 80 MHz Nicht Flüchtig 4Gbit 11 ns Blitz 512 MX 8 Spi - quad i/o 600 µs
GD25LQ64ET2GY GigaDevice Semiconductor (HK) Limited GD25LQ64ET2GY 1.2776
RFQ
ECAD 6914 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Tablett Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop - - - 1970-GD25LQ64ET2GY 4,320 133 MHz Nicht Flüchtig 64Mbit 6 ns Blitz 8m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25LQ64ES2GR GigaDevice Semiconductor (HK) Limited GD25LQ64ES2GR 1.2272
RFQ
ECAD 9109 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LQ Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop - - - 1970-GD25LQ64ES2Grtr 2.000 133 MHz Nicht Flüchtig 64Mbit 6 ns Blitz 8m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
GD25F128ESIGY GigaDevice Semiconductor (HK) Limited GD25F128SIGY 1.1934
RFQ
ECAD 7509 0.00000000 Gigadevice Semiconductor (HK) Limited - - - Tablett Aktiv - - - 1970-GD25F128esigy 3.000
GD25WD05CKIGR GigaDevice Semiconductor (HK) Limited GD25WD05CKIG 0,3016
RFQ
ECAD 2332 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WD Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-uson (1,5x1,5) Herunterladen 1970-GD25WD05CKIGRTR 3.000 100 MHz Nicht Flüchtig 512Kbit 12 ns Blitz 64k x 8 Spi - dual i/o 55 µs, 6 ms
GD25R128EYIGR GigaDevice Semiconductor (HK) Limited GD25R128EYIGR 1.6388
RFQ
ECAD 3645 0.00000000 Gigadevice Semiconductor (HK) Limited GD25R Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD25R128EYIGRTR 3.000 200 MHz Nicht Flüchtig 128mbit Blitz 16 mx 8 Spi - quad i/o - - -
GD25WQ16ESIGR GigaDevice Semiconductor (HK) Limited GD25WQ16ESIGR 0,5387
RFQ
ECAD 6785 0.00000000 Gigadevice Semiconductor (HK) Limited GD25WQ Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 3,6 V. 8-Sop Herunterladen 1970-GD25WQ16ESIGRTR 2.000 104 MHz Nicht Flüchtig 16mbit 12 ns Blitz 2m x 8 Spi - quad i/o 120 µs, 4 ms
GD25B512MEY2GR GigaDevice Semiconductor (HK) Limited GD25B512MEY2GR 6.5028
RFQ
ECAD 1666 0.00000000 Gigadevice Semiconductor (HK) Limited GD25B Band & Rollen (TR) Aktiv -40 ° C ~ 105 ° C (TA) Oberflächenhalterung 8-WDFN Exponte Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-Wson (6x8) - - - 1970-GD25B512MEY2Grtr 3.000 133 MHz Nicht Flüchtig 512mbit Blitz 64m x 8 Spi - quad i/o, qpi, dtr - - -
GD25D40CKIGR GigaDevice Semiconductor (HK) Limited GD25D40CKIG 0,3368
RFQ
ECAD 1826 0.00000000 Gigadevice Semiconductor (HK) Limited GD25d Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-XFDFN Exposed Pad Flash - Nor (SLC) 2,7 V ~ 3,6 V. 8-uson (1,5x1,5) Herunterladen 1970-GD25D40CKIGRTR 3.000 104 MHz Nicht Flüchtig 4mbit 6 ns Blitz 512k x 8 Spi - dual i/o 50 µs, 4 ms
GD25LE64ESIGR GigaDevice Semiconductor (HK) Limited GD25LE64SIGR 0,8045
RFQ
ECAD 7779 0.00000000 Gigadevice Semiconductor (HK) Limited GD25LE Band & Rollen (TR) Aktiv -40 ° C ~ 85 ° C (TA) Oberflächenhalterung 8-Soic (0,209 ", 5,30 mm Breit) Flash - Nor (SLC) 1,65 V ~ 2 V 8-Sop Herunterladen 1970-GD25LE64Sigrtr 2.000 133 MHz Nicht Flüchtig 64Mbit 6 ns Blitz 8m x 8 Spi - quad i/o, qpi 60 µs, 2,4 ms
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus