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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
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![]() | SI7491DP-T1-E3 | - - - | ![]() | 6283 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7491 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 11a (ta) | 4,5 V, 10 V. | 8,5 MOHM @ 18A, 10V | 3v @ 250 ähm | 85 NC @ 5 V. | ± 20 V | - - - | 1,8W (TA) | |||||
![]() | SI3443BDV-T1-BE3 | 0,6700 | ![]() | 2781 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3443 | MOSFET (Metalloxid) | 6-tsop | - - - | 1 (unbegrenzt) | 742-SI3443BDV-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 3.6a (TA) | 2,5 V, 4,5 V. | 60mohm @ 4,7a, 4,5 V. | 1,4 V @ 250 ähm | 9 NC @ 4,5 V. | ± 12 V | - - - | 1.1W (TA) | ||||||
![]() | SI4354DY-T1-E3 | - - - | ![]() | 4280 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4354 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 9,5a (TA) | 4,5 V, 10 V. | 16,5 MOHM @ 9,5A, 10V | 1,6 V @ 250 ähm | 10,5 NC @ 4,5 V | ± 12 V | - - - | 2,5 W (TA) | |||||
![]() | SI1073X-T1-E3 | - - - | ![]() | 9096 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | SI1073 | MOSFET (Metalloxid) | SC-89 (SOT-563F) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 30 v | 980 Ma (TA) | 4,5 V, 10 V. | 173mohm @ 980 mA, 10V | 3v @ 250 ähm | 9.45 NC @ 10 V | ± 20 V | 265 PF @ 15 V | - - - | 236 MW (TA) | ||||
![]() | SIR180ADP-T1-RE3 | 1.9300 | ![]() | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir180 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 35A (TA), 137A (TC) | 7,5 V, 10 V. | 2,2 MOHM @ 10a, 10V | 3,6 V @ 250 ähm | 70 nc @ 10 v | ± 20 V | 3280 PF @ 30 V | - - - | 5.4W (TA), 83,3W (TC) | ||||||
![]() | Sira18DP-T1-GE3 | 0,6300 | ![]() | 911 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sira18 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 33a (TC) | 4,5 V, 10 V. | 7,5 MOHM @ 10a, 10V | 2,4 V @ 250 ähm | 21,5 NC @ 10 V. | +20V, -16v | 1000 PF @ 15 V | - - - | 3,3 W (TA), 14,7W (TC) | |||||
![]() | Sum80090e-GE3 | 3.0600 | ![]() | 4696 | 0.00000000 | Vishay Siliconix | Thunderfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Sum80090 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 150 v | 128a (TC) | 7,5 V, 10 V. | 9mohm @ 30a, 10V | 5 V @ 250 ähm | 95 NC @ 10 V | ± 20 V | 3425 PF @ 75 V | - - - | 375W (TC) | |||||
![]() | SI7156DP-T1-GE3 | - - - | ![]() | 8806 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7156 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 50a (TC) | 4,5 V, 10 V. | 3,5 MOHM @ 20A, 10V | 3v @ 250 ähm | 155 NC @ 10 V | ± 20 V | 6900 PF @ 20 V | - - - | 5.4W (TA), 83W (TC) | ||||
![]() | IRLR014TRLPBF | 0,6218 | ![]() | 3285 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRLR014 | MOSFET (Metalloxid) | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 7.7a (TC) | 4V, 5V | 200mohm @ 4.6a, 5V | 2v @ 250 ähm | 8.4 NC @ 5 V. | ± 10 V | 400 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||
![]() | SIS822DNT-T1-GE3 | 0,1157 | ![]() | 5737 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | Sis822 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 12a (TC) | 4,5 V, 10 V. | 24MOHM @ 7.8a, 10V | 2,5 V @ 250 ähm | 12 NC @ 10 V | ± 20 V | 435 PF @ 15 V | - - - | 15.6W (TC) | ||||||
![]() | Sum09n20-270-e3 | - - - | ![]() | 5114 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Sum09 | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 200 v | 9a (TC) | 6 V, 10V | 270 MOHM @ 5A, 10V | 4v @ 250 ähm | 17 NC @ 10 V | ± 20 V | 580 PF @ 25 V. | - - - | 3,75 W (TA), 60 W (TC) | ||||
![]() | SIHB12N60ET5-GE3 | 1.2311 | ![]() | 2141 | 0.00000000 | Vishay Siliconix | E | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB12 | MOSFET (Metalloxid) | D²pak (to-263) | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 12a (TC) | 10V | 380Mohm @ 6a, 10V | 4v @ 250 ähm | 58 NC @ 10 V | ± 30 v | 937 PF @ 100 V | - - - | 147W (TC) | ||||||
![]() | SIA850DJ-T1-GE3 | - - - | ![]() | 1490 | 0.00000000 | Vishay Siliconix | Little Foot® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 Dual | SIA850 | MOSFET (Metalloxid) | Powerpak® SC-70-6 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 190 v | 950 Ma (TC) | 1,8 V, 4,5 V. | 3,8ohm bei 360 mA, 4,5 V. | 1,4 V @ 250 ähm | 4,5 NC @ 10 V. | ± 16 v | 90 PF @ 100 V | Schottky Diode (Isolier) | 1,9W (TA), 7W (TC) | ||||
![]() | SI2392D-T1-GE3 | - - - | ![]() | 2699 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SI2392 | MOSFET (Metalloxid) | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 3.1a (TC) | 4,5 V, 10 V. | 126mohm @ 2a, 10V | 3v @ 250 ähm | 10.4 NC @ 10 V | ± 20 V | 196 PF @ 50 V | - - - | 1,25W (TA), 2,5W (TC) | ||||
![]() | SQD45P03-12_GE3 | 1.7700 | ![]() | 844 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD45 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 30 v | 50a (TC) | 4,5 V, 10 V. | 10Mohm @ 15a, 10V | 2,5 V @ 250 ähm | 83 NC @ 10 V | ± 20 V | 3495 PF @ 15 V | - - - | 71W (TC) | |||||
![]() | SIJ150DP-T1-GE3 | 1.2600 | ![]() | 9137 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SIJ150 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SSIJ150DP-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 45 V | 30,9a (TA), 110A (TC) | 4,5 V, 10 V. | 2,83 MOHM @ 15a, 10V | 2,3 V @ 250 ähm | 70 nc @ 10 v | +20V, -16v | 4000 PF @ 20 V | - - - | 5.2W (TA), 65,7W (TC) | |||||
![]() | SISS05DN-T1-GE3 | 1.2600 | ![]() | 4007 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS05 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 29,4a (TA), 108a (TC) | 4,5 V, 10 V. | 3,5 MOHM @ 10a, 10V | 2,2 V @ 250 ähm | 115 NC @ 10 V | +16 V, -20 V | 4930 PF @ 15 V | - - - | 5W (TA), 65,7W (TC) | |||||
![]() | SQS840EN-T1_GE3 | 0,9700 | ![]() | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SQS840 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 12a (TC) | 4,5 V, 10 V. | 20mohm @ 7,5a, 10V | 2,5 V @ 250 ähm | 22,5 NC @ 10 V | ± 20 V | 1031 PF @ 20 V | - - - | 33W (TC) | |||||
![]() | SI2312BDS-T1-BE3 | 0,5700 | ![]() | 3 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2312BDS-T1-BE3TR | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 3.9a (TA) | 1,8 V, 4,5 V. | 31mohm @ 5a, 4,5 V. | 850 MV @ 250 ähm | 12 NC @ 4,5 V. | ± 8 v | - - - | 750 MW (TA) | |||||||
![]() | SIHH21N60E-T1-GE3 | 2.1785 | ![]() | 2605 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | SIHH21 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 20A (TC) | 10V | 176mohm @ 11a, 10V | 4v @ 250 ähm | 83 NC @ 10 V | ± 30 v | 2015 PF @ 100 V | - - - | 104W (TC) | |||||
![]() | SIHP14N50D-E3 | 2.9400 | ![]() | 3704 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP14 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | SIHP14N50DE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 14a (TC) | 10V | 400mohm @ 7a, 10V | 5 V @ 250 ähm | 58 NC @ 10 V | ± 30 v | 1144 PF @ 100 V | - - - | 208W (TC) | ||||
![]() | SI4459ADY-T1-GE3 | 1.6000 | ![]() | 54 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4459 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 29a (TC) | 4,5 V, 10 V. | 5mohm @ 15a, 10V | 2,5 V @ 250 ähm | 195 NC @ 10 V. | ± 20 V | 6000 PF @ 15 V | - - - | 3,5 W (TA), 7,8W (TC) | |||||
![]() | SI1551DL-T1-GE3 | - - - | ![]() | 5068 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1551 | MOSFET (Metalloxid) | 270 MW | SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N und p-kanal | 20V | 290 mA, 410 mA | 1,9OHM @ 290 mA, 4,5 V. | 1,5 V @ 250 ähm | 1,5nc @ 4,5 V | - - - | Logikpegel -tor | ||||||
![]() | SQM120N04-1M7_GE3 | 2.1512 | ![]() | 7763 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SQM120 | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | SQM120N04-1m7-GE3 | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 120a (TC) | 10V | 1,7 MOHM @ 30a, 10V | 3,5 V @ 250 ähm | 310 nc @ 10 v | ± 20 V | 17350 PF @ 25 V. | - - - | 300 W (TC) | ||||
![]() | SI7459DP-T1-E3 | - - - | ![]() | 1431 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7459 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 13a (ta) | 10V | 6,8 MOHM @ 22A, 10V | 3v @ 250 ähm | 170 nc @ 10 v | ± 25 V | - - - | 1,9W (TA) | |||||
![]() | IRF9Z34SPBF | 2.0000 | ![]() | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | IRF9Z34 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | P-Kanal | 60 v | 18a (TC) | 10V | 140Mohm @ 11a, 10V | 4v @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1100 PF @ 25 V. | - - - | 3.7W (TA), 88W (TC) | |||||
![]() | Sihu6n65e-GE3 | 0,7796 | ![]() | 6308 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Lange Leads, ipak, to-251ab | Sihu6 | MOSFET (Metalloxid) | Ipak (to-251) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 75 | N-Kanal | 650 V | 7a (TC) | 10V | 600mohm @ 3a, 10V | 4v @ 250 ähm | 48 nc @ 10 v | ± 30 v | 820 PF @ 100 V | - - - | 78W (TC) | |||||
![]() | SQJ412EP-T2_GE3 | 0,7110 | ![]() | 5531 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ412 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ412EP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 32a (TC) | 4,5 V, 10 V. | 4.1MOHM @ 10.3a, 10V | 2,5 V @ 250 ähm | 120 nc @ 10 v | ± 20 V | 5950 PF @ 20 V | - - - | 83W (TC) | ||||
![]() | SIA914ADJ-T1-GE3 | - - - | ![]() | 9137 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 Dual | Sia914 | MOSFET (Metalloxid) | 7.8W | Powerpak® SC-70-6 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 20V | 4,5a | 43mohm @ 3,7a, 4,5 V. | 900 MV @ 250 ähm | 12.5nc @ 8v | 470pf @ 10v | Logikpegel -tor | |||||||
![]() | SI2323D-T1-E3 | 0,7300 | ![]() | 4060 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SI2323 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 3.7a (ta) | 1,8 V, 4,5 V. | 39mohm @ 4,7a, 4,5 V. | 1V @ 250 ähm | 19 NC @ 4,5 V. | ± 8 v | 1020 PF @ 10 V | - - - | 750 MW (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerlager