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Diskette HalblerProdukte (5717)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHB30N60ET5-GE3 | 6.0700 |  | 800 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 29a (TC) | 10V | 125mohm @ 15a, 10V | 4v @ 250 ähm | 130 nc @ 10 v | ± 30 v | 2600 PF @ 100 V | - - - | 250 W (TC) | ||||||
 | IRFR220PBF-BE3 | 0,6674 | | 6996 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR220 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 742-IRFR220PBF-BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 4.8a (TC) | 10V | 800MOHM @ 2,9a, 10 V. | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | |||||
 | Sidr402ep-t1-re3 | 2.5200 | | 1279 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIDR402EP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 65,2a (TA), 291a (TC) | 4,5 V, 10 V. | 0,88 MOHM @ 20A, 10 V. | 2,3 V @ 250 ähm | 165 NC @ 10 V. | +20V, -16v | 9100 PF @ 20 V | - - - | 7,5 W (TA), 150 W (TC) | ||||
 | Sira18bdp-T1-GE3 | 0,4900 | | 12 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sira18 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 19A (TA), 40A (TC) | 4,5 V, 10 V. | 6,83 MOHM @ 10a, 10V | 2,4 V @ 250 ähm | 19 NC @ 10 V | +20V, -16v | 680 PF @ 15 V | - - - | 3,8 W (TA), 17W (TC) | ||||
 | SIHF9520S-GE3 | 1.0900 | | 3888 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHF9520 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 100 v | 6.8a (TC) | 10V | 600mohm @ 4.1a, 10V | 4v @ 250 ähm | 18 NC @ 10 V. | ± 20 V | 390 PF @ 25 V. | - - - | 3,7W (TA), 60 W (TC) | ||||
 | SQUN702E-T1_GE3 | 3.6300 | | 1826 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | Sterben | Squn702 | MOSFET (Metalloxid) | 48W (TC), 60 W (TC) | Sterben | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N und p-kanal, Geremeinsamer Abfluss | 40V, 200V | 30a (TC), 20a (TC) | 9,2mohm @ 9,8a, 10V, 60MOHM @ 5A, 10V, 30MOHM @ 6a, 10V | 2,5 V bei 250 UA, 3,5 V BEI 250 µA | 23nc @ 20v, 14nc @ 20v, 30.2nc @ 100V | 1474pf @ 20V, 1450pf @ 20V, 1302pf @ 100V | - - - | ||||||
 | SISHA10DN-T1-GE3 | 0,9500 | | 1701 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8sh | Sisha10 | MOSFET (Metalloxid) | Powerpak® 1212-8sh | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 25a (TA), 30a (TC) | 4,5 V, 10 V. | 3,7 MOHM @ 10a, 10V | 2,2 V @ 250 ähm | 51 NC @ 10 V | +20V, -16v | 2425 PF @ 15 V | - - - | 3.6W (TA), 39W (TC) | ||||
 | SQS484CENW-T1_GE3 | 0,8600 | | 7624 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | SQS484 | MOSFET (Metalloxid) | Powerpak® 1212-8W | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQS484Cenw-t1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 16a (TC) | 4,5 V, 10 V. | 9,5 MOHM @ 10a, 10V | 2,5 V @ 250 ähm | 40 nc @ 10 v | ± 20 V | 2350 PF @ 25 V. | - - - | 62,5W (TC) | |||
 | SIZ980BDT-T1-GE3 | 1.6600 | | 16 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | SIZ980 | MOSFET (Metalloxid) | 3,8 W (TA), 20W (TC), 5W (TA), 66W (TC) | 8-Powerpair® (6x5) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-Siz980bdt-T1-Ge3ct | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Dual), Schottky | 30V | 23,7a (TA), 54,8a (TC), 54,3a (TA), 197a (TC) | 4,39MOHM @ 15a, 10V, 1.06 MOHM @ 19A, 10V | 2,2 V @ 250 ähm | 18nc @ 10v, 79nc @ 10v | 790PF @ 15V, 3655PF @ 15V | - - - | |||||
 | Sizf914DT-T1-GE3 | 0,7095 | | 9526 | 0.00000000 | Vishay Siliconix | Powerpair®, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | Sizf914 | MOSFET (Metalloxid) | 3,4 W (TA), 26,6 W (TC), 4W (TA), 60 W (TC) | 8-Powerpair® (6x5) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-Sizf914DT-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 25 v | 23,5a (TA), 40A (TC), 52A (TA), 60A (TC) | 3,8 MOHM @ 10a, 10 V, 0,9 Mohm @ 10a, 10 V. | 2,4 V @ 250 UA, 2,2 V BEI 250 µA | 21nc @ 10v, 98nc @ 10v | 1050pf @ 10v, 4670pf @ 10v | - - - | |||||
 | SQJ418EP-T2_GE3 | 0,4560 | | 5155 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ418 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ418EP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 48a (TC) | 10V | 14mohm @ 10a, 10V | 3,5 V @ 250 ähm | 35 NC @ 10 V | ± 20 V | 1700 PF @ 25 V. | - - - | 68W (TC) | |||
 | SIHD3N50DT5-GE3 | 0,3563 | | 2148 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sihd3 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHD3N50DT5-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 500 V | 3a (TC) | 10V | 3,2OHM @ 1,5A, 10 V | 5 V @ 250 ähm | 12 NC @ 10 V | ± 30 v | 175 PF @ 100 V | - - - | 69W (TC) | |||
| SIHFZ48RS-GE3 | 1.0779 | | 7593 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHFZ48 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHFZ48RS-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 60 v | 50a (TC) | 10V | 18mohm @ 43a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 20 V | 2400 PF @ 25 V. | - - - | 190W (TC) | |||
| SIHFR220TRL-GE3 | 0,7200 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SIHFR220 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 4.8a (TC) | 10V | 800MOHM @ 2,9a, 10 V. | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||
| SQJ474EP-T2_GE3 | 0,3784 | | 4806 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ474 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ474EP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 26a (TC) | 4,5 V, 10 V. | 30mohm @ 10a, 10V | 2,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1100 PF @ 25 V. | - - - | 45W (TC) | |||
| SQD25N15-52-T4_GE3 | 0,6985 | | 8022 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD25 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQD25N15-52-T4_GE3TR | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 150 v | 25a (TC) | 10V | 52mohm @ 15a, 10V | 4v @ 250 ähm | 51 NC @ 10 V | ± 20 V | 2200 PF @ 25 V. | - - - | 107W (TC) | |||
 | IRF9Z30PBF-BE3 | 2.6200 | | 8 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF9Z30 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF9Z30PBF-BE3 | Ear99 | 8541.29.0095 | 50 | P-Kanal | 50 v | 18a (TC) | 10V | 140Mohm @ 9.3a, 10V | 4v @ 250 ähm | 39 NC @ 10 V. | ± 20 V | 900 PF @ 25 V. | - - - | 74W (TC) | ||||
| IRF640PBF-BE3 | 1.9900 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF640 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRF640PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 18a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 70 nc @ 10 v | ± 20 V | 1300 PF @ 25 V. | - - - | 125W (TC) | ||||
 | IRFBC30APBF-BE3 | 3.0700 | | 7668 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBC30 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRFBC30APBF-BE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 3.6a (TC) | 10V | 2.2ohm @ 2.2a, 10 V. | 4,5 V @ 250 ähm | 23 NC @ 10 V | ± 30 v | 510 PF @ 25 V. | - - - | 74W (TC) | ||||
| SUD50P08-25L-BE3 | 2.6900 | | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud50 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 80 v | 12,5a (TA), 50A (TC) | 4,5 V, 10 V. | 25,2mohm @ 12,5a, 10V | 3v @ 250 ähm | 160 nc @ 10 v | ± 20 V | 4700 PF @ 40 V. | - - - | 8.3W (TA), 136W (TC) | |||||
 | SI3458BDV-T1-BE3 | 0,9100 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3458 | MOSFET (Metalloxid) | 6-tsop | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 3,2a (TA), 4,1a (TC) | 4,5 V, 10 V. | 100MOHM @ 3.2a, 10V | 3v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 350 PF @ 30 V | - - - | 2W (TA), 3,3 W (TC) | |||||
 | IRll110TRPBF-BE3 | 0,9300 | | 30 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | Irll110 | MOSFET (Metalloxid) | SOT-223 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 1,5a (TC) | 4V, 5V | 540MOHM @ 900 mA, 5V | 2v @ 250 ähm | 6.1 NC @ 5 V | ± 10 V | 250 PF @ 25 V. | - - - | 2W (TA), 3,1W (TC) | |||||
| SQ3426ev-T1_BE3 | 0,7700 | | 1 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SQ3426 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-sq3426ev-t1_be3dkr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 7a (TC) | 4,5 V, 10 V. | 42mohm @ 5a, 10V | 2,5 V @ 250 ähm | 12 NC @ 4,5 V. | ± 20 V | 720 PF @ 30 V | - - - | 5W (TC) | ||||
 | SQ2309ES-T1_BE3 | 0,6700 | | 10 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2309 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 1.7a (TC) | 4,5 V, 10 V. | 335MOHM @ 1,25A, 10V | 2,5 V @ 250 ähm | 8,5 NC @ 10 V | ± 20 V | 265 PF @ 25 V. | - - - | 2W (TC) | |||||
| SQ2301ES-T1_BE3 | 0,5300 | | 202 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2301 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | 742-sq2301es-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 3.9a (TC) | 2,5 V, 4,5 V. | 120 MOHM @ 2,8a, 4,5 V. | 1,5 V @ 250 ähm | 8 NC @ 4,5 V. | ± 8 v | 425 PF @ 10 V. | - - - | 3W (TC) | ||||
| SQJB46ELP-T1_GE3 | 1.2200 | | 3 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJB46 | MOSFET (Metalloxid) | 34W (TC) | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 3.000 | 2 N-Kanal | 40V | 30a (TC) | 8mohm @ 8a, 10V | 2,2 V @ 250 ähm | 40nc @ 10v | 2100pf @ 25v | Standard | ||||||||
| SIR882BDP-T1-RE3 | 1.6100 | | 8 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir882 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 16,5a (TA), 67,5a (TC) | 4,5 V, 10 V. | 8.3mohm @ 15a, 10V | 2,3 V @ 250 ähm | 81 NC @ 10 V | ± 20 V | 3762 PF @ 50 V | - - - | 5W (TA), 83,3W (TC) | ||||
| SQJ146EP-T1_GE3 | 0,8800 | | 7121 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ146 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ146EP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 75a (TC) | 10V | 7mohm @ 15a, 10V | 3,5 V @ 250 ähm | 27 NC @ 10 V | ± 20 V | 1500 PF @ 25 V. | - - - | 75W (TC) | |||
| SISF06DN-T1-GE3 | 1.1800 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8SCD | SISF06 | MOSFET (Metalloxid) | 5.2W (TA), 69,4W (TC) | Powerpak® 1212-8SCD | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (dual) gemeinsame Abfluss | 30V | 28a (TA), 101a (TC) | 4,5 MOHM @ 7A, 10V | 2,3 V @ 250 ähm | 45nc @ 10v | 2050pf @ 15V | - - - | |||||||
 | SISS80DN-T1-GE3 | 1.6700 | | 11 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS80 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 58,3a (TA), 210a (TC) | 2,5 V, 10 V. | 0,92 Mohm @ 10a, 10 V. | 1,5 V @ 250 ähm | 122 NC @ 10 V | +12 V, -8 V | 6450 PF @ 10 V. | - - - | 5W (TA), 65W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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