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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
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![]() | SIJ482DP-T1-GE3 | 1,8000 | ![]() | 1441 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SIJ482 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 60a (TC) | 4,5 V, 10 V. | 6,2 MOHM @ 20A, 10V | 2,7 V @ 250 ähm | 71 NC @ 10 V | ± 20 V | 2425 PF @ 40 V | - - - | 5W (TA), 69,4W (TC) | |||||
![]() | SQJA86EP-T1_GE3 | 1.0600 | ![]() | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sqja86 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 30a (TC) | 4,5 V, 10 V. | 19Mohm @ 8a, 10V | 2,5 V @ 250 ähm | 32 NC @ 10 V | ± 20 V | 1400 PF @ 25 V. | - - - | 48W (TC) | |||||
![]() | IRFBC40LPBF | 2.3505 | ![]() | 3688 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | IRFBC40 | MOSFET (Metalloxid) | To-262-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | *IRFBC40LPBF | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 6.2a (TC) | 10V | 1,2OHM @ 3,7A, 10 V | 4v @ 250 ähm | 60 nc @ 10 v | ± 20 V | 1300 PF @ 25 V. | - - - | 3.1W (TA), 130 W (TC) | ||||
![]() | IRL540Strl | - - - | ![]() | 1719 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | IRL540 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 28a (TC) | 4V, 5V | 77mohm @ 17a, 5V | 2v @ 250 ähm | 64 NC @ 5 V | ± 10 V | 2200 PF @ 25 V. | - - - | 3.7W (TA), 150W (TC) | ||||
![]() | 2N5115JTXL02 | - - - | ![]() | 6135 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Veraltet | - - - | K. Loch | To-206aa, to-18-3 Metalldose | 2N5115 | To-206aa (to-18) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 20 | - - - | - - - | ||||||||||||||
![]() | SI2316DS-T1-GE3 | 0,2741 | ![]() | 2054 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SI2316 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 2,9a (ta) | 4,5 V, 10 V. | 50MOHM @ 3.4a, 10V | 800 MV @ 250 um (min) | 7 NC @ 10 V | ± 20 V | 215 PF @ 15 V | - - - | 700 MW (TA) | ||||
![]() | SQM120N10-3M8_GE3 | 3.8400 | ![]() | 1089 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SQM120 | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 120a (TC) | 10V | 3,8 MOHM @ 20A, 10V | 3,5 V @ 250 ähm | 190 nc @ 10 v | ± 20 V | 7230 PF @ 25 V. | - - - | 375W (TC) | |||||
![]() | SI4386DY-GE3 | 1.3500 | ![]() | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4386 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 11a (ta) | 4,5 V, 10 V. | 7mohm @ 16a, 10V | 2,5 V @ 250 ähm | 18 NC @ 4,5 V. | ± 20 V | - - - | 1.47W (TA) | ||||||
![]() | SI7160DP-T1-E3 | - - - | ![]() | 7774 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7160 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 20A (TC) | 4,5 V, 10 V. | 8,7 MOHM @ 15a, 10V | 2,5 V @ 250 ähm | 66 NC @ 10 V | ± 16 v | 2970 PF @ 15 V | - - - | 5W (TA), 27,7W (TC) | ||||
![]() | SIA427DJ-T1-GE3 | 0,5700 | ![]() | 505 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | SIA427 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 12a (TC) | 1,2 V, 4,5 V. | 16mohm @ 8.2a, 4,5 V. | 800 MV @ 250 ähm | 50 nc @ 5 v | ± 5 V | 2300 PF @ 4 V. | - - - | 3,5 W (TA), 19W (TC) | |||||
![]() | SI6413DQ-T1-GE3 | - - - | ![]() | 3197 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | SI6413 | MOSFET (Metalloxid) | 8-tssop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 7.2a (ta) | 1,8 V, 4,5 V. | 10MOHM @ 8,8a, 4,5 V. | 800 MV @ 400 ähm | 105 NC @ 5 V | ± 8 v | - - - | 1.05W (TA) | |||||
![]() | SI3948DV-T1-GE3 | - - - | ![]() | 1883 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3948 | MOSFET (Metalloxid) | 1.15W | 6-tsop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | - - - | 105mohm @ 2,5a, 10V | 1 V @ 250 um (min) | 3.2nc @ 5v | - - - | Logikpegel -tor | |||||||
![]() | SI5480DU-T1-GE3 | - - - | ![]() | 7563 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® Chipfet ™ Single | SI5480 | MOSFET (Metalloxid) | Powerpak® Chipfet ™ Single | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 12a (TC) | 4,5 V, 10 V. | 16mohm @ 7.2a, 10V | 3v @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1230 PF @ 15 V | - - - | 3.1W (TA), 31W (TC) | ||||
![]() | V30393-T1-E3 | - - - | ![]() | 1069 | 0.00000000 | Vishay Siliconix | * | Band & Rollen (TR) | Veraltet | V30393 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 2.500 | |||||||||||||||||||||
![]() | SQ2309ES-T1_GE3 | 0,6700 | ![]() | 3026 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2309 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 1.7a (TC) | 4,5 V, 10 V. | 336MOHM @ 3,8a, 10V | 2,5 V @ 250 ähm | 8,5 NC @ 10 V | ± 20 V | 265 PF @ 25 V. | - - - | 2W (TC) | |||||
![]() | SQS414CENW-T1_GE3 | 0,6800 | ![]() | 3013 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | MOSFET (Metalloxid) | Powerpak® 1212-8W | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 18a (TC) | 4,5 V, 10 V. | 23mohm @ 2,4a, 10V | 2,5 V @ 250 ähm | 14 NC @ 10 V | ± 20 V | 870 PF @ 25 V. | - - - | 33W (TC) | ||||||
![]() | IRFBC30PBF-BE3 | 1.7300 | ![]() | 938 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBC30 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFBC30PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 3.6a (TC) | 10V | 2.2ohm @ 2.2a, 10 V. | 4v @ 250 ähm | 31 NC @ 10 V | ± 20 V | 660 PF @ 25 V. | - - - | 74W (TC) | |||||
![]() | SI4904DY-T1-E3 | 2.2300 | ![]() | 10 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4904 | MOSFET (Metalloxid) | 3.25W | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 40V | 8a | 16mohm @ 5a, 10V | 2v @ 250 ähm | 85nc @ 10v | 2390PF @ 20V | - - - | |||||||
![]() | SUD50N024-09P-E3 | - - - | ![]() | 2897 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud50 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 22 v | 49a (TC) | 4,5 V, 10 V. | 9,5 MOHM @ 20A, 10V | 3v @ 250 ähm | 16 NC @ 4,5 V | ± 20 V | 1300 PF @ 10 V | - - - | 6,5W (TA), 39,5W (TC) | |||||
![]() | SIHG32N50D-E3 | 3.2990 | ![]() | 1527 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG32 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 500 | N-Kanal | 500 V | 30a (TC) | 10V | 150Mohm @ 16a, 10V | 5 V @ 250 ähm | 96 NC @ 10 V | ± 30 v | 2550 PF @ 100 V | - - - | 390W (TC) | |||||
![]() | SISA72DN-T1-GE3 | 0,9400 | ![]() | 7733 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | Sisa72 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 60a (TC) | 4,5 V, 10 V. | 3,5 MOHM @ 10a, 10V | 2,4 V @ 250 ähm | 30 NC @ 4,5 V. | +20V, -16v | 3240 PF @ 20 V | - - - | 52W (TC) | |||||
![]() | SI7434DP-T1-E3 | 2.8800 | ![]() | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7434 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 250 V | 2.3a (TA) | 6 V, 10V | 155mohm @ 3,8a, 10V | 4v @ 250 ähm | 50 nc @ 10 v | ± 20 V | - - - | 1,9W (TA) | ||||||
![]() | SI1416EDH-T1-GE3 | 0,4700 | ![]() | 8 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1416 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 3.9a (TC) | 2,5 V, 10 V. | 58mohm @ 3.1a, 10V | 1,4 V @ 250 ähm | 12 NC @ 10 V | ± 12 V | - - - | 2,8 W (TC) | |||||
![]() | SQJQ466E-T1_GE3 | 2.8100 | ![]() | 7656 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 | SQJQ466 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 60 v | 200a (TC) | 10V | 1,9 MOHM @ 10a, 10V | 3,5 V @ 250 ähm | 180 nc @ 10 v | ± 20 V | 10210 PF @ 25 V. | - - - | 150W (TC) | |||||
![]() | SQJ168ELP-T1_GE3 | 0,8800 | ![]() | 3 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-sqj168elp-t1_ge3tr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 24a (TC) | 4,5 V, 10 V. | 36mohm @ 15a, 10V | 2,5 V @ 250 ähm | 20 nc @ 10 v | ± 20 V | 987 PF @ 25 V. | - - - | 29.4W (TC) | |||||
![]() | SQJ570EP-T1_BE3 | 1.1000 | ![]() | 7498 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ570 | MOSFET (Metalloxid) | 27W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-SQJ570EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N und p-kanal | 100V | 15a (TC), 9,5a (TC) | 45mohm @ 6a, 10V, 146Mohm @ 6a, 10V | 2,5 V @ 250 ähm | 15nc @ 10v, 20nc @ 10v | 600pf @ 25v, 650pf @ 25v | - - - | |||||||
![]() | SQJA60EP-T1_GE3 | 1.1100 | ![]() | 7855 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sqja60 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 30a (TC) | 4,5 V, 10 V. | 12,5 MOHM @ 8A, 10V | 2,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1600 PF @ 25 V. | - - - | 45W (TC) | |||||
![]() | SI7623DN-T1-GE3 | 1.6600 | ![]() | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SI7623 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 35a (TC) | 2,5 V, 10 V. | 3,8 MOHM @ 20A, 10V | 1,5 V @ 250 ähm | 180 nc @ 10 v | ± 12 V | 5460 PF @ 10 V | - - - | 3,7W (TA), 52W (TC) | |||||
![]() | SIR104LDP-T1-RE3 | 1.7200 | ![]() | 16 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir104 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 18,8a (TA), 81a (TC) | 4,5 V, 10 V. | 6.1MOHM @ 15a, 10V | 3v @ 250 ähm | 110 nc @ 10 v | ± 20 V | 4870 PF @ 50 V | - - - | 5.4W (TA), 100W (TC) | |||||
![]() | SI4940DY-T1-GE3 | - - - | ![]() | 5190 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4940 | MOSFET (Metalloxid) | 1.1W | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 40V | 4.2a | 36mohm @ 5.7a, 10V | 1 V @ 250 um (min) | 14nc @ 10v | - - - | Logikpegel -tor |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
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