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Diskette HalblerProdukte (5717)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHB35N60E-GE3 | 6.4000 |  | 229 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB35 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 650 V | 32a (TC) | 10V | 94mohm @ 17a, 10V | 4v @ 250 ähm | 132 NC @ 10 V | ± 30 v | 2760 PF @ 100 V | - - - | 250 W (TC) | ||||||||
 | SI4463CDY-T1-GE3 | 0,9400 | | 97 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4463 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 20 v | 13,6a (TA), 49A (TC) | 2,5 V, 10 V. | 8mohm @ 13a, 10V | 1,4 V @ 250 ähm | 162 NC @ 10 V | ± 12 V | 4250 PF @ 15 V | - - - | 2,7W (TA), 5W (TC) | ||||||||
 | SIHP12N60E-GE3 | 2.6900 | | 2114 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP12 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 12a (TC) | 10V | 380Mohm @ 6a, 10V | 4v @ 250 ähm | 58 NC @ 10 V | ± 30 v | 937 PF @ 100 V | - - - | 147W (TC) | ||||||||
 | SI7252ADP-T1-GE3 | 1.6400 | | 9983 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SI7252 | MOSFET (Metalloxid) | 3,6 W (TA), 33,8W (TC) | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SI7252ADP-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 100V | 9,3a (TA), 28,7a (TC) | 18,6 MOHM @ 10a, 10V | 4v @ 250 ähm | 26.5nc @ 10v | 1266PF @ 50V | - - - | |||||||||
 | SIHS36N50D-GE3 | 6.6000 | | 480 | 0.00000000 | Vishay Siliconix | D | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | 742-SIHS36N50D-GE3 | Ear99 | 8541.29.0095 | 30 | N-Kanal | 500 V | 36a (TC) | 10V | 130mohm @ 18a, 10V | 5 V @ 250 ähm | 125 NC @ 10 V | ± 30 v | 3233 PF @ 100 V | - - - | 446W (TC) | ||||||||
 | IRF630PBF-BE3 | 1.5300 | | 5671 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Irf630 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF630PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 9a (TC) | 400mohm @ 5.4a, 10V | 4v @ 250 ähm | 43 NC @ 10 V | ± 20 V | 800 PF @ 25 V. | - - - | 74W (TC) | |||||||||
 | IRFR214PBF-BE3 | 1.4500 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR214 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-IRFR214PBF-BE3 | Ear99 | 8541.29.0095 | 75 | N-Kanal | 250 V | 2.2a (TC) | 2OHM @ 1,3a, 10V | 4v @ 250 ähm | 8.2 NC @ 10 V | ± 20 V | 140 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||||||
| IRL630PBF-BE3 | 2.3500 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRL630 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRL630PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 9a (TC) | 400mohm @ 5.4a, 5V | 2v @ 250 ähm | 40 nc @ 10 v | ± 10 V | 1100 PF @ 25 V. | - - - | 74W (TC) | |||||||||
 | Siz340bdt-T1-GE3 | 0,7400 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | Siz340 | MOSFET (Metalloxid) | 3,7W (TA), 16,7W (TC), 4,2W (TA), 31W (TC) | 8-Power33 (3x3) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-Siz340bdt-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | 16,9a (TA), 36a (TC), 25,3a (TA), 69,3a (TC) | 8.56MOHM @ 10a, 10 V, 4,31MOHM @ 20A, 10 V. | 2,4 V @ 250 ähm | 12,6nc @ 10v, 23,5nc @ 10v | 550pf @ 15V, 1065PF @ 15V | - - - | |||||||||
 | IRL510PBF-BE3 | 1.3500 | | 388 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IRL510 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742 -irl510pbf -be3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 100 v | 5.6a (TC) | 540MOHM @ 3.4a, 5V | 2v @ 250 ähm | 6.1 NC @ 5 V | ± 10 V | 250 PF @ 25 V. | - - - | 43W (TC) | |||||||||
| IRFZ40PBF-BE3 | 2.7800 | | 746 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IRFZ40 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFZ40PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 50a (TC) | 28mohm @ 31a, 10V | 4v @ 250 ähm | 67 NC @ 10 V | ± 20 V | 1900 PF @ 25 V. | - - - | 150W (TC) | |||||||||
| IRFR014PBF-BE3 | 1.4600 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR014 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-IRFR014PBF-BE3 | Ear99 | 8541.29.0095 | 75 | N-Kanal | 60 v | 7.7a (TC) | 200mohm @ 4.6a, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 300 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||||||
 | SQJ136ELP-T1_GE3 | 1.6800 | | 8946 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ136 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ136ELP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 350a (TC) | 1,12 MOHM @ 15a, 10V | 2,2 V @ 250 ähm | 150 NC @ 10 V. | ± 20 V | 8015 PF @ 25 V. | - - - | 500W (TC) | |||||||||
 | SI1411DH-T1-E3 | - - - | | 7619 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1411 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 150 v | 420 Ma (TA) | 10V | 2,6OHM @ 500 mA, 10V | 4,5 V @ 100 µA | 6.3 NC @ 10 V | ± 20 V | - - - | 1W (TA) | ||||||||
 | SI2300D-T1-BE3 | 0,4700 | | 9086 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2300D-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 3.1a (TA), 3.6a (TC) | 2,5 V, 4,5 V. | 68mohm @ 2,9a, 4,5 V. | 1,5 V @ 250 ähm | 10 nc @ 10 v | ± 12 V | 320 PF @ 15 V | - - - | 1,1W (TA), 1,7W (TC) | |||||||||
| SUD19P06-60-BE3 | 1.1800 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud19 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 60 v | 18,3a (TC) | 4,5 V, 10 V. | 60MOHM @ 10a, 10V | 3v @ 250 ähm | 40 nc @ 10 v | ± 20 V | 1710 PF @ 25 V | - - - | 2,3 W (TA), 38,5 W (TC) | |||||||||
 | 2N4416A-2 | - - - | | 4254 | 0.00000000 | Vishay Siliconix | - - - | Schüttgut | Veraltet | -50 ° C ~ 150 ° C (TJ) | K. Loch | To-206af, bis 72-4 Metall Kann | 2N4416 | 300 MW | To-206af (bis 72) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 20 | N-Kanal | 4pf @ 15V | 35 V | 5 ma @ 15 V | 2,5 V @ 1 na | |||||||||||||
 | SI7810DN-T1-E3 | 1.5100 | | 75 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SI7810 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 3.4a (TA) | 6 V, 10V | 62mohm @ 5.4a, 10V | 4,5 V @ 250 ähm | 17 NC @ 10 V | ± 20 V | - - - | 1,5 W (TA) | |||||||||
 | SIHB21N80AE-GE3 | 2.9000 | | 1847 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB21 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHB21N80AE-GE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 17,4a (TC) | 10V | 235mohm @ 11a, 10V | 4v @ 250 ähm | 72 NC @ 10 V | ± 30 v | 1388 PF @ 100 V | - - - | 32W (TC) | |||||||
| SI1424EDH-T1-BE3 | 0,4300 | | 2356 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1424 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 742-si1424edh-t1-be3tr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 4a (ta), 4a (TC) | 33mohm @ 5a, 4,5 V. | 1V @ 250 ähm | 18 NC @ 8 V | ± 8 v | - - - | 1,56W (TA), 2,8 W (TC) | |||||||||
 | SI3476DV-T1-GE3 | 0,5500 | | 4 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3476 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 4.6a (TC) | 4,5 V, 10 V. | 93mohm @ 3,5a, 10V | 3v @ 250 ähm | 7,5 NC @ 10 V | ± 20 V | 195 PF @ 40 V. | - - - | 2W (TA), 3,6 W (TC) | ||||||||
 | SQJ992EP-T1_BE3 | 1.3900 | | 1173 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ992 | MOSFET (Metalloxid) | 34W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-SQJ992EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 15a (TC) | 56.2mohm @ 3.7a, 10V | 2,5 V @ 250 ähm | 12nc @ 10v | 446PF @ 30V | - - - | ||||||||||
 | SIRS4400DP-T1-RE3 | 4.2200 | | 5057 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 77A (TA), 440A (TC) | 4,5 V, 10 V. | 0,69 MOHM @ 20A, 10 V. | 2,3 V @ 250 ähm | 295 NC @ 10 V | ± 20 V | 13730 PF @ 20 V | - - - | 7.4W (TA), 240W (TC) | |||||||||
 | SIR424DP-T1-GE3 | 0,9400 | | 5859 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir424 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 30a (TC) | 4,5 V, 10 V. | 5.5MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 35 NC @ 10 V | ± 20 V | 1250 PF @ 10 V | - - - | 4,8W (TA), 41,7W (TC) | ||||||||
| SIR846ADP-T1-RE3 | 0,8618 | | 8819 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir846 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 60a (TC) | 6 V, 10V | 7,8 MOHM @ 20A, 10V | 3v @ 250 ähm | 66 NC @ 10 V | ± 20 V | 2350 PF @ 50 V | - - - | 83W (TC) | |||||||||
 | SI7960DP-T1-E3 | - - - | | 9652 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SI7960 | MOSFET (Metalloxid) | 1.4W | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 6.2a | 21mohm @ 9.7a, 10V | 3v @ 250 ähm | 75nc @ 10v | - - - | Logikpegel -tor | |||||||||
| SI4668DY-T1-GE3 | - - - | | 2414 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4668 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 25 v | 16,2a (TC) | 4,5 V, 10 V. | 10,5 MOHM @ 15a, 10V | 2,6 V @ 250 ähm | 42 NC @ 10 V. | ± 16 v | 1654 PF @ 15 V | - - - | 2,5 W (TA), 5W (TC) | ||||||||
 | SI7223DN-T1-GE3 | 0,9400 | | 14 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen III | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 Dual | SI7223 | MOSFET (Metalloxid) | 2,6 W (TA), 23 W (TC) | Powerpak® 1212-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 p-kanal (dual) | 30V | 6a (TC) | 26.4mohm @ 8a, 10V | 2,5 V @ 250 ähm | 40nc @ 10v | 1425PF @ 15V | - - - | ||||||||||
| SI1470DH-T1-GE3 | - - - | | 6216 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1470 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 5.1a (TC) | 2,5 V, 4,5 V. | 66mohm @ 3,8a, 4,5 V. | 1,6 V @ 250 ähm | 7,5 NC @ 5 V. | ± 12 V | 510 PF @ 15 V | - - - | 1,5 W (TA), 2,8 W (TC) | |||||||
 | SIHF22N65E-GE3 | 2.5872 | | 6373 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | SIHF22 | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 650 V | 22a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 30 v | 2415 PF @ 100 V | - - - | 35W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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