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Diskette HalblerProdukte (5717)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SI1422DH-T1-GE3 | - - - |  | 9826 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1422 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 12 v | 4a (TC) | 1,8 V, 4,5 V. | 26mohm @ 5.1a, 4,5 V. | 1V @ 250 ähm | 20 nc @ 8 v | ± 8 v | 725 PF @ 6 V | - - - | 1,56W (TA), 2,8 W (TC) | ||||
 | SI4470EY-T1-GE3 | - - - | | 5425 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4470 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 9a (ta) | 6 V, 10V | 11Mohm @ 12a, 10V | 2V @ 250 ähm (min) | 70 nc @ 10 v | ± 20 V | - - - | 1,85W (TA) | |||||
 | SIB417AEDK-T1-GE3 | - - - | | 2624 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-75-6 | SIB417 | MOSFET (Metalloxid) | Powerpak® SC-75-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 9a (TC) | 1,2 V, 4,5 V. | 32mohm @ 3a, 4,5 V. | 1V @ 250 ähm | 18,5 NC @ 5 V. | ± 5 V | 878 PF @ 4 V. | - - - | 2,4W (TA), 13W (TC) | |||||
 | IRF9Z30PBF-BE3 | 2.6200 | | 8 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF9Z30 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF9Z30PBF-BE3 | Ear99 | 8541.29.0095 | 50 | P-Kanal | 50 v | 18a (TC) | 10V | 140Mohm @ 9.3a, 10V | 4v @ 250 ähm | 39 NC @ 10 V. | ± 20 V | 900 PF @ 25 V. | - - - | 74W (TC) | |||||
| IRFBG30PBF-BE3 | 2.5600 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBG30 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFBG30PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 1000 v | 3.1a (TC) | 10V | 5ohm @ 1,9a, 10V | 4v @ 250 ähm | 80 nc @ 10 v | ± 20 V | 980 PF @ 25 V. | - - - | 125W (TC) | |||||
| IRL640PBF-BE3 | 2.4800 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRL640 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRL640PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 17a (TC) | 4V, 5V | 180Mohm @ 10a, 5V | 2v @ 250 ähm | 66 NC @ 5 V. | ± 10 V | 1800 PF @ 25 V. | - - - | 125W (TC) | |||||
| IRF640PBF-BE3 | 1.9900 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF640 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRF640PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 18a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 70 nc @ 10 v | ± 20 V | 1300 PF @ 25 V. | - - - | 125W (TC) | |||||
 | IRFBC30APBF-BE3 | 3.0700 | | 7668 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBC30 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRFBC30APBF-BE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 3.6a (TC) | 10V | 2.2ohm @ 2.2a, 10 V. | 4,5 V @ 250 ähm | 23 NC @ 10 V | ± 30 v | 510 PF @ 25 V. | - - - | 74W (TC) | |||||
 | SUD50P08-25L-BE3 | 2.6900 | | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud50 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 80 v | 12,5a (TA), 50A (TC) | 4,5 V, 10 V. | 25,2mohm @ 12,5a, 10V | 3v @ 250 ähm | 160 nc @ 10 v | ± 20 V | 4700 PF @ 40 V. | - - - | 8.3W (TA), 136W (TC) | ||||||
 | SISF06DN-T1-GE3 | 1.1800 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8SCD | SISF06 | MOSFET (Metalloxid) | 5.2W (TA), 69,4W (TC) | Powerpak® 1212-8SCD | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (dual) gemeinsame Abfluss | 30V | 28a (TA), 101a (TC) | 4,5 MOHM @ 7A, 10V | 2,3 V @ 250 ähm | 45nc @ 10v | 2050pf @ 15V | - - - | ||||||||
 | SISS80DN-T1-GE3 | 1.6700 | | 11 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS80 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 58,3a (TA), 210a (TC) | 2,5 V, 10 V. | 0,92 Mohm @ 10a, 10 V. | 1,5 V @ 250 ähm | 122 NC @ 10 V | +12 V, -8 V | 6450 PF @ 10 V. | - - - | 5W (TA), 65W (TC) | ||||||
 | SI3458BDV-T1-BE3 | 0,9100 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3458 | MOSFET (Metalloxid) | 6-tsop | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 3,2a (TA), 4,1a (TC) | 4,5 V, 10 V. | 100MOHM @ 3.2a, 10V | 3v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 350 PF @ 30 V | - - - | 2W (TA), 3,3 W (TC) | ||||||
 | SQJ488EP-T1_BE3 | 1.5800 | | 8990 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ488 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ488EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 42a (TC) | 4,5 V, 10 V. | 21mohm @ 7.1a, 10V | 2,5 V @ 250 ähm | 27 NC @ 10 V | ± 20 V | 978 PF @ 50 V | - - - | 83W (TC) | |||||
 | IRll110TRPBF-BE3 | 0,9300 | | 30 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | Irll110 | MOSFET (Metalloxid) | SOT-223 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 1,5a (TC) | 4V, 5V | 540MOHM @ 900 mA, 5V | 2v @ 250 ähm | 6.1 NC @ 5 V | ± 10 V | 250 PF @ 25 V. | - - - | 2W (TA), 3,1W (TC) | ||||||
| SQ3426ev-T1_BE3 | 0,7700 | | 1 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SQ3426 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-sq3426ev-t1_be3dkr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 7a (TC) | 4,5 V, 10 V. | 42mohm @ 5a, 10V | 2,5 V @ 250 ähm | 12 NC @ 4,5 V. | ± 20 V | 720 PF @ 30 V | - - - | 5W (TC) | |||||
 | SQ2309ES-T1_BE3 | 0,6700 | | 10 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2309 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 1.7a (TC) | 4,5 V, 10 V. | 335MOHM @ 1,25A, 10V | 2,5 V @ 250 ähm | 8,5 NC @ 10 V | ± 20 V | 265 PF @ 25 V. | - - - | 2W (TC) | ||||||
| SQ2301ES-T1_BE3 | 0,5300 | | 202 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2301 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | 742-sq2301es-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 3.9a (TC) | 2,5 V, 4,5 V. | 120 MOHM @ 2,8a, 4,5 V. | 1,5 V @ 250 ähm | 8 NC @ 4,5 V. | ± 8 v | 425 PF @ 10 V. | - - - | 3W (TC) | |||||
| SIHD11N80AE-GE3 | 1,8000 | | 40 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sihd11 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHD11N80AE-GE3 | Ear99 | 8541.29.0095 | 75 | N-Kanal | 800 V | 8a (TC) | 10V | 450MOHM @ 5.5A, 10V | 4v @ 250 ähm | 42 NC @ 10 V. | ± 30 v | 804 PF @ 100 V | - - - | 78W (TC) | ||||
| SQJB46ELP-T1_GE3 | 1.2200 | | 3 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJB46 | MOSFET (Metalloxid) | 34W (TC) | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 3.000 | 2 N-Kanal | 40V | 30a (TC) | 8mohm @ 8a, 10V | 2,2 V @ 250 ähm | 40nc @ 10v | 2100pf @ 25v | Standard | |||||||||
 | SIR882BDP-T1-RE3 | 1.6100 | | 8 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir882 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 16,5a (TA), 67,5a (TC) | 4,5 V, 10 V. | 8.3mohm @ 15a, 10V | 2,3 V @ 250 ähm | 81 NC @ 10 V | ± 20 V | 3762 PF @ 50 V | - - - | 5W (TA), 83,3W (TC) | |||||
| SQJ140EP-T1_GE3 | 1.5200 | | 6124 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ140 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 266a (TC) | 10V | 2,1 MOHM @ 15a, 10V | 3,5 V @ 250 ähm | 64 NC @ 10 V | ± 20 V | 3855 PF @ 25 V. | - - - | 263W (TC) | |||||
| SQJ146EP-T1_GE3 | 0,8800 | | 7121 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ146 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ146EP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 75a (TC) | 10V | 7mohm @ 15a, 10V | 3,5 V @ 250 ähm | 27 NC @ 10 V | ± 20 V | 1500 PF @ 25 V. | - - - | 75W (TC) | ||||
 | SQSA12CENW-T1_GE3 | 0,9400 | | 9730 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | MOSFET (Metalloxid) | Powerpak® 1212-8W | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 18a (TC) | 4,5 V, 10 V. | 22mohm @ 7a, 10V | 2,5 V @ 250 ähm | 47 NC @ 10 V | ± 20 V | 2900 PF @ 25 V. | - - - | 62,5W (TC) | ||||||
 | SI2387D-T1-GE3 | 0,5000 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 742-SI2387D-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 80 v | 2.1a (TA), 3a (TC) | 4,5 V, 10 V. | 164mohm @ 2.1a, 10V | 2,5 V @ 250 ähm | 10.2 NC @ 10 V | ± 20 V | 395 PF @ 40 V | - - - | 1,3 W (TA), 2,5W (TC) | ||||
 | SIS590DN-T1-GE3 | 0,9800 | | 27 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 Dual | SIS590 | MOSFET (Metalloxid) | 2,5 W (TA), 17,9 W (TC), 2,6 W (TA), 23,1W (TC) | Powerpak® 1212-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N und p-kanal | 100V | 2,7a (TA), 4a (TC), 2,3a (TA), 4A (TC) | 167mohm @ 1,5a, 10V, 251Mohm @ 2,3a, 10 V | 2,5 V @ 250 ähm | - - - | - - - | - - - | |||||||
 | SQJ138ELP-T1_GE3 | 1.5500 | | 9657 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-sqj138elp-t1_ge3tr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 315a (TC) | 4,5 V, 10 V. | 1,5 MOHM @ 15a, 10V | 2,2 V @ 250 ähm | 117 NC @ 10 V | ± 20 V | 6685 PF @ 25 V. | - - - | 500W (TC) | |||||
| SQJ164ELP-T1_GE3 | 1.1600 | | 5279 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ164ELP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 75a (TC) | 4,5 V, 10 V. | 12mohm @ 15a, 10V | 2,5 V @ 250 ähm | 57 NC @ 10 V | ± 20 V | 3100 PF @ 25 V. | - - - | 187W (TC) | |||||
| SQJ128ELP-T1_GE3 | 1.6300 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-sqj128elp-t1_ge3tr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 437a (TC) | 4,5 V, 10 V. | 1,15 MOHM @ 15a, 10V | 2,2 V @ 250 ähm | 150 NC @ 10 V. | ± 20 V | 7315 PF @ 25 V. | - - - | 500W (TC) | |||||
| SQ7415CENW-T1_GE3 | 0,9700 | | 9258 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | MOSFET (Metalloxid) | Powerpak® 1212-8W | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 16a (TC) | 4,5 V, 10 V. | 65mohm @ 5.7a, 10V | 2,5 V @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1385 PF @ 25 V. | - - - | 53W (TC) | ||||||
 | SIHB5N80AE-GE3 | 1.6100 | | 840 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHB5N80AE-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 4.4a (TC) | 10V | 1,35 Ohm @ 1,5a, 10 V. | 4v @ 250 ähm | 16,5 NC @ 10 V. | ± 30 v | 321 PF @ 100 V | - - - | 62,5W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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