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Diskette HalblerProdukte (5717)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHFL110TR-GE3 | 0,6300 |  | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | SIHFL110 | MOSFET (Metalloxid) | SOT-223 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 1,5a (TC) | 10V | 540MOHM @ 900 mA, 10V | 4v @ 250 ähm | 8.3 NC @ 10 V | ± 20 V | 180 PF @ 25 V. | - - - | 2W (TA), 3,1W (TC) | |||||
 | SIHB6N80E-GE3 | 1.3550 | | 1217 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB6 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 5.4a (TC) | 10V | 940Mohm @ 3a, 10V | 4v @ 250 ähm | 44 NC @ 10 V. | ± 30 v | 827 PF @ 100 V | - - - | 78W (TC) | |||||
| SIHF530Strl-GE3 | 1.0700 | | 800 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHF530 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 14a (TC) | 10V | 160mohm @ 8.4a, 10V | 4v @ 250 ähm | 26 NC @ 10 V | ± 20 V | 670 PF @ 25 V. | - - - | 3.7W (TA), 88W (TC) | |||||
 | SIA483ADJ-T1-GE3 | 0,5300 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | SIA483 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 10.6a (TA), 12A (TC) | 4,5 V, 10 V. | 20mohm @ 5a, 10V | 2,5 V @ 250 ähm | 26 NC @ 10 V | +16 V, -20 V | 950 PF @ 15 V | - - - | 3,4W (TA), 17,9 W (TC) | |||||
 | SIHA690N60E-GE3 | 0,9150 | | 4904 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha690 | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 4.3a (TC) | 10V | 700MOHM @ 2a, 10V | 5 V @ 250 ähm | 12 NC @ 10 V | ± 30 v | 347 PF @ 100 V | - - - | 29W (TC) | |||||
 | SQJ142ELP-T1_GE3 | 1.1600 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ142 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | 1 (unbegrenzt) | 742-SQJ142ELP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 175a (TC) | 4,5 V, 10 V. | 2,8 MOHM @ 10a, 10V | 2,2 V @ 250 ähm | 55 NC @ 10 V | ± 20 V | 3015 PF @ 25 V. | - - - | 190W (TC) | |||||
 | Sihu2n80ae-GE3 | 1.0000 | | 7765 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | Sihu2 | MOSFET (Metalloxid) | To-251aa | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHU2N80AE-GE3 | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 800 V | 2,9a (TC) | 10V | 2,9OHM @ 500 mA, 10V | 4v @ 250 ähm | 10.5 NC @ 10 V | ± 30 v | 180 PF @ 100 V. | - - - | 62,5W (TC) | ||||
| SQJA66EP-T1_GE3 | 1.4400 | | 8768 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sqja66 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 75a (TC) | 10V | 3mohm @ 10a, 10V | 3,3 V @ 250 ähm | 98 NC @ 10 V. | ± 20 V | 5400 PF @ 25 V. | Standard | 68W (TC) | |||||
| SQJ138EP-T1_GE3 | 1.6400 | | 1233 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ138 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ138EP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 330a (TC) | 10V | 1,8 MOHM @ 15a, 10V | 3,5 V @ 250 ähm | 81 NC @ 10 V | ± 20 V | 4715 PF @ 25 V. | - - - | 312W (TC) | ||||
 | SIZ256DT-T1-GE3 | 1.3100 | | 7571 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | Siz256 | MOSFET (Metalloxid) | 4,3W (TA), 33W (TC) | 8-Powerpair® (3.3x3.3) | Herunterladen | 1 (unbegrenzt) | 742-Siz256dt-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 70V | 11,5a (TA), 31,8a (TC) | 17,6 MOHM @ 7A, 4,5 V. | 1,5 V @ 250 ähm | 27nc @ 10v | 1060PF @ 35V | - - - | |||||||
 | SIHP6N80AE-GE3 | 1.6900 | | 971 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP6 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-SIHP6N80AE-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 5a (TC) | 950Mohm @ 2a, 10V | 4v @ 250 ähm | 22,5 NC @ 10 V | ± 30 v | 422 PF @ 100 V | - - - | 62,5W (TC) | ||||||
 | SI7116BDN-T1-GE3 | 1.1600 | | 5 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SI7116 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 18,4a (TA), 65A (TC) | 7.4mohm @ 16a, 10V | 2,5 V @ 250 ähm | 48 nc @ 10 v | ± 20 V | 1915 PF @ 20 V | - - - | 5W (TA), 62,5W (TC) | |||||||
 | IRFB9N60APBF-BE3 | 3.0800 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFB9 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFB9N60APBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 9.2a (TC) | 750MOHM @ 5.5A, 10V | 4v @ 250 ähm | 49 NC @ 10 V. | ± 30 v | 1400 PF @ 25 V. | - - - | 170W (TC) | ||||||
 | IRFR110TRLPBF-BE3 | 1.3900 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR110 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 4.3a (TC) | 540MOHM @ 2,6a, 10V | 4v @ 250 ähm | 8.3 NC @ 10 V | ± 20 V | 180 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||||
| IRFBF30PBF-BE3 | 2.8800 | | 6536 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBF30 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFBF30PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 900 V | 3.6a (TC) | 3,7OHM @ 2,2a, 10 V | 4v @ 250 ähm | 78 NC @ 10 V | ± 20 V | 1200 PF @ 25 V. | - - - | 125W (TC) | ||||||
| IRFL014TRPBF-BE3 | 0,9400 | | 8923 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | IRFL014 | MOSFET (Metalloxid) | SOT-223 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 2.7a (TC) | 200mohm @ 1,6a, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 300 PF @ 25 V. | - - - | 2W (TA), 3,1W (TC) | |||||||
 | SI1441EDH-T1-BE3 | 0,5300 | | 9791 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1441 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 742-SI1441EDH-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 4a (ta), 4a (TC) | 41mohm @ 5a, 4,5 V. | 1V @ 250 ähm | 33 NC @ 8 V | ± 10 V | - - - | 1,6W (TA), 2,8 W (TC) | ||||||
| SI1499DH-T1-BE3 | 0,6700 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1499 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 742-SI1499DH-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 1,6a (TA), 1,6a (TC) | 78mohm @ 2a, 4,5 V. | 800 MV @ 250 ähm | 16 NC @ 4,5 V | ± 5 V | 650 PF @ 4 V. | - - - | 2,5 W (TA), 2,78W (TC) | |||||
| SI1922EDH-T1-BE3 | 0,4100 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1922 | MOSFET (Metalloxid) | 740 MW (TA), 1,25 W (TC) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 20V | 1,3a (TA), 1,3a (TC) | 198mohm @ 1a, 4,5 V. | 1V @ 250 ähm | 2,5nc @ 8v | - - - | - - - | |||||||
| IRF9620PBF-BE3 | 1.6800 | | 792 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF9620 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF9620PBF-BE3 | Ear99 | 8541.29.0095 | 50 | P-Kanal | 200 v | 3,5a (TC) | 1,5OHM @ 1,5A, 10 V. | 4v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 350 PF @ 25 V. | - - - | 40W (TC) | ||||||
 | SQ4946CEY-T1_GE3 | 1.0100 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4946 | MOSFET (Metalloxid) | 4W (TC) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQ4946CEY-T1_GE3TR | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 60 v | 7a (TC) | 40mohm @ 4,5a, 10V | 2,5 V @ 250 ähm | 22nc @ 10v | 865PF @ 25v | - - - | ||||||
| IRFR1N60ATRPBF-BE3 | 1.5500 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Irfr1 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-IRFR1N60ATRPBF-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 600 V | 1.4a (TC) | 7ohm @ 840 mA, 10V | 4v @ 250 ähm | 14 NC @ 10 V | ± 30 v | 229 PF @ 25 V. | - - - | 36W (TC) | ||||||
| IRF624PBF-BE3 | 0,8831 | | 9980 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF624 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF624PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 250 V | 4.4a (TC) | 1,1OHM @ 2,6a, 10V | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 50W (TC) | ||||||
| IRFZ44PBF-BE3 | 2.0400 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | Irfz44 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFZ44PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 50a (TC) | 28mohm @ 31a, 10V | 4v @ 250 ähm | 67 NC @ 10 V | ± 20 V | 1900 PF @ 25 V. | - - - | 150W (TC) | ||||||
| SI1411DH-T1-BE3 | 0,9000 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1411 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 150 v | 420 Ma (TA) | 2,6OHM @ 500 mA, 10V | 4,5 V @ 100 µA | 6.3 NC @ 10 V | ± 20 V | - - - | 1W (TA) | |||||||
 | SIR510DP-T1-RE3 | 2.2500 | | 10 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 31a (ta), 126a (TC) | 7,5 V, 10 V. | 3,6 MOHM @ 20A, 10V | 4v @ 250 ähm | 81 NC @ 10 V | ± 20 V | 4980 PF @ 50 V | - - - | 6.25W (TA), 104W (TC) | ||||||
 | SIHP080N60E-GE3 | 4.3900 | | 958 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | 742-SIHP080N60E-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 35a (TC) | 10V | 80Mohm @ 17a, 10V | 5 V @ 250 ähm | 63 NC @ 10 V | ± 30 v | 2557 PF @ 100 V | - - - | 227W (TC) | |||||
 | SUM60061EL-GE3 | 5.9300 | | 1489 | 0.00000000 | Vishay Siliconix | Trenchfet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-sum60061el-GE3 | Ear99 | 8541.29.0095 | 800 | P-Kanal | 80 v | 150a (TC) | 4,5 V, 10 V. | 6.1MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 218 NC @ 10 V | ± 20 V | 9600 PF @ 40 V | - - - | 375W (TC) | |||||
 | SQJA16EP-T1_GE3 | 1.5800 | | 4 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 278a (TC) | 4,5 V, 10 V. | 3mohm @ 15a, 10V | 2,5 V @ 250 ähm | 84 NC @ 10 V | ± 20 V | 5485 PF @ 25 V. | - - - | 500W (TC) | ||||||
 | SQJQ144AER-T1_GE3 | 2.8300 | | 2 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 40 v | 575a (TC) | 10V | 0,9 MOHM @ 20A, 10 V. | 3,5 V @ 250 ähm | 145 NC @ 10 V. | ± 20 V | 9020 PF @ 25 V. | - - - | 600W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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