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Diskette HalblerProdukte (5717)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHF9640S-GE3 | 0,9592 |  | 6687 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHF9640 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHF9640S-GE3TR | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 200 v | 11a (TC) | 10V | 500mohm @ 6.6a, 10V | 4v @ 250 ähm | 44 NC @ 10 V. | ± 20 V | 1200 PF @ 25 V. | - - - | 3W (TA), 125W (TC) | ||||
 | SIA456DJ-T3-GE3 | 0,3589 | | 1335 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | SIA456 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIA456DJ-T3-GE3TR | Ear99 | 8541.29.0095 | 10.000 | N-Kanal | 200 v | 1,1a (TA), 2,6a (TC) | 1,8 V, 4,5 V. | 1,38OHM @ 750 mA, 4,5 V. | 1,4 V @ 250 ähm | 14,5 NC @ 10 V. | ± 16 v | 350 PF @ 100 V | - - - | 3,5 W (TA), 19W (TC) | ||||
 | SIR626ADP-T1-RE3 | 2.0600 | | 23 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir626 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 40,4a (TA), 165a (TC) | 6 V, 10V | 1,75 MOHM @ 20A, 10V | 3,5 V @ 250 ähm | 83 NC @ 10 V | ± 20 V | 3770 PF @ 30 V | - - - | 6.25W (TA), 104W (TC) | |||||
 | SIHG105N60EF-GE3 | 4.3600 | | 500 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG105 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 500 | N-Kanal | 600 V | 29a (TC) | 10V | 102mohm @ 13a, 10V | 5 V @ 250 ähm | 53 NC @ 10 V | ± 30 v | 1804 PF @ 100 V. | - - - | 208W (TC) | |||||
 | V50382-E3 | - - - | | 2405 | 0.00000000 | Vishay Siliconix | * | Band & Rollen (TR) | Aktiv | V50382 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-V50382-E3TR | 0000.00.0000 | 500 | - - - | ||||||||||||||||||||
 | Siha11n80ae-GE3 | 2.0000 | | 7 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha11 | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 8a (TC) | 10V | 450MOHM @ 5.5A, 10V | 4v @ 250 ähm | 42 NC @ 10 V. | ± 30 v | 804 PF @ 100 V | - - - | 31W (TC) | |||||
 | SISA12BDN-T1-GE3 | 0,9800 | | 6 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SISA12BDN-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 24A (TA), 87A (TC) | 4,5 V, 10 V. | 4.3mohm @ 10a, 10V | 2,4 V @ 250 ähm | 32 NC @ 10 V | +20V, -16v | 1470 PF @ 15 V | - - - | 4W (TA), 52W (TC) | |||||
 | SI2323CDS-T1-BE3 | 0,4700 | | 3618 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2323CDS-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 4,6a (TA), 6a (TC) | 1,8 V, 4,5 V. | 39mohm @ 4,6a, 4,5 V. | 1V @ 250 ähm | 25 NC @ 4,5 V. | ± 8 v | 1090 PF @ 10 V. | - - - | 1,25W (TA), 2,5W (TC) | ||||||
| SI2356D-T1-BE3 | 0,4000 | | 8251 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 40 v | 3,2a (TA), 4,3a (TC) | 2,5 V, 10 V. | 51mohm @ 3.2a, 10 V. | 1,5 V @ 250 ähm | 13 NC @ 10 V | ± 12 V | 370 PF @ 20 V | - - - | 960 MW (TA), 1,7W (TC) | |||||||
 | SIDR402DP-T1-RE3 | 2.3800 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 64,6a (TA), 100A (TC) | 4,5 V, 10 V. | 0,88 MOHM @ 20A, 10 V. | 2,3 V @ 250 ähm | 165 NC @ 10 V. | +20V, -16v | 9100 PF @ 20 V | - - - | 6,25W (TA), 125W (TC) | |||||||
 | SQJ850EP-T2_GE3 | 1.4600 | | 3684 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ850EP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 24a (TC) | 4,5 V, 10 V. | 23mohm @ 10.3a, 10V | 2,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1225 PF @ 30 V | - - - | 45W (TC) | ||||||
 | SQJ980AEP-T1_BE3 | 1.1900 | | 9408 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ980 | MOSFET (Metalloxid) | 34W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-SQJ980AEP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 75 V | 17a (TC) | 50MOHM @ 3,8a, 10V | 2,5 V @ 250 ähm | 21nc @ 10v | 790PF @ 35V | - - - | |||||||
| SQJ414EP-T1_BE3 | 0,9400 | | 1352 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ414EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 30a (TC) | 4,5 V, 10 V. | 12mohm @ 4,5a, 10V | 2,5 V @ 250 ähm | 25 NC @ 10 V | ± 20 V | 1110 PF @ 15 V | - - - | 45W (TC) | ||||||
 | SQ3469ev-T1_BE3 | 0,6200 | | 8 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-sq3469ev-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 8a (TC) | 4,5 V, 10 V. | 36mohm @ 6.7a, 10V | 2,5 V @ 25 ähm | 27 NC @ 10 V | ± 20 V | 1020 PF @ 10 V | - - - | 5W (TC) | ||||||
 | SIHP35N60E-Be3 | 6.0500 | | 1 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 32a (TC) | 10V | 94mohm @ 17a, 10V | 4v @ 250 ähm | 132 NC @ 10 V | ± 30 v | 2760 PF @ 100 V | - - - | 250 W (TC) | |||||||
| SIHP15N50E-Be3 | 2.2000 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 14,5a (TC) | 10V | 280 MOHM @ 7,5A, 10V | 4v @ 250 ähm | 66 NC @ 10 V | ± 30 v | 1162 PF @ 100 V | - - - | 156W (TC) | |||||||
| SIHP25N60EFL-BE3 | 4.7300 | | 942 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 25a (TC) | 10V | 146mohm @ 12.5a, 10V | 5 V @ 250 ähm | 75 NC @ 10 V | ± 30 v | 2274 PF @ 100 V | - - - | 250 W (TC) | |||||||
 | SIHA22N60AE-GE3 | 3.6200 | | 998 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 8a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 96 NC @ 10 V | ± 30 v | 1451 PF @ 100 V | - - - | 33W (TC) | |||||||
 | SI3440ADV-T1-BE3 | 0,4700 | | 6506 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-SI3440ADV-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 150 v | 1,6a (TA), 2,2a (TC) | 7,5 V, 10 V. | 380MOHM @ 1,5A, 10V | 4v @ 250 ähm | 4 NC @ 10 V. | ± 20 V | 80 PF @ 75 V | - - - | 2W (TA), 3,6 W (TC) | ||||||
| SI2323DDS-T1-BE3 | 0,5900 | | 5053 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2323DDS-T1-BE3TR | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 4,1a (TA), 5,3a (TC) | 1,8 V, 4,5 V. | 39mohm @ 4.1a, 4,5 V. | 1V @ 250 ähm | 36 NC @ 8 V | ± 8 v | 1160 PF @ 10 V. | - - - | 960 MW (TA), 1,7W (TC) | ||||||
 | SISS5110DN-T1-GE3 | 1.6600 | | 5692 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS5110 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 13,4a (TA), 46,4a (TC) | 7,5 V, 10 V. | 8,9mohm @ 10a, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 25 V | 920 PF @ 50 V | - - - | 4,8W (TA), 56,8W (TC) | ||||||
 | SIHH250N60EF-T1GE3 | 4.3200 | | 50 | 0.00000000 | Vishay Siliconix | EF | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 13a (TC) | 10V | 250 MOHM @ 5,5A, 10V | 5 V @ 250 ähm | 23 NC @ 10 V | ± 30 v | 915 PF @ 100 V | - - - | 89W (TC) | ||||||
 | SIR5710DP-T1-RE3 | 1.4300 | | 1431 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 150 v | 7,8a (TA), 26,8a (TC) | 7,5 V, 10 V. | 31.5mohm @ 10a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 20 V | 770 PF @ 75 V | - - - | 4,8W (TA), 56,8W (TC) | ||||||
 | SQJ186ELP-T1_GE3 | 0,9600 | | 2 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 66a (TC) | 4,5 V, 10 V. | 12,5 MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 45 nc @ 10 v | ± 20 V | 2325 PF @ 25 V. | - - - | 135W (TC) | ||||||
 | SIS4604DN-T1-GE3 | 0,9700 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SIS4604 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 14,6a (TA), 44,4a (TC) | 7,5 V, 10 V. | 9,5 MOHM @ 10a, 10V | 4v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 960 PF @ 30 V | - - - | 3,6 W (TA), 33,7W (TC) | |||||
 | SIR4608LDP-T1-GE3 | 1.2300 | | 6 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir4608 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 13,3a (TA), 43,4a (TC) | 4,5 V, 10 V. | 11,5 MOHM @ 10a, 10V | 3v @ 250 ähm | 23 NC @ 10 V | ± 20 V | 905 PF @ 30 V | - - - | 3.6W (TA), 39W (TC) | |||||
| SISS4402DN-T1-GE3 | 1.6800 | | 7879 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS4402 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 35,5a (TA), 128a (TC) | 4,5 V, 10 V. | 2,2 Mohm @ 15a, 10 V | 2,5 V @ 250 ähm | 70 nc @ 10 v | +20V, -16v | 3850 PF @ 20 V | - - - | 5W (TA), 65,7W (TC) | |||||
 | SI1417EDH-T1-GE3 | - - - | | 9164 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1417 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 12 v | 2.7a (TA) | 1,8 V, 4,5 V. | 85mohm @ 3,3a, 4,5 V. | 450 MV @ 250 um (min) | 8 NC @ 4,5 V. | ± 12 V | - - - | 1W (TA) | |||||
 | SI2305D-T1-E3 | - - - | | 1335 | 0.00000000 | Vishay Siliconix | - - - | Klebeband (CT) Schneiden | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SI2305 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 3,5a (TA) | 52mohm @ 3,5a, 4,5 V. | 800 MV @ 250 ähm | 15 NC @ 4,5 V | 1245 PF @ 4 V. | - - - | ||||||||
 | SIHP10N40D-E3 | 0,8761 | | 1020 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP10 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 400 V | 10a (TC) | 10V | 600mohm @ 5a, 10V | 5 V @ 250 ähm | 30 NC @ 10 V | ± 30 v | 526 PF @ 100 V | - - - | 147W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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