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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - vorwärts (vf) (max) @ if | Strom - reverse -lockage @ vr | Strom - Dassche Anitt Buhben (IO) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | J105 | - - - | ![]() | 9982 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0095 | 1 | N-Kanal | - - - | 25 v | 500 mA @ 15 V | 4,5 V @ 1 µA | 3 Ohm | |||||||||||||||||||||||||||||||||||||||
![]() | GBPC1502W | 3.0300 | ![]() | 516 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | Standard | Gbpc-w | Herunterladen | Ear99 | 8541.10.0080 | 100 | 1,1 V @ 7,5 a | 5 µa @ 200 V. | 15 a | Einphase | 200 v | ||||||||||||||||||||||||||||||||||||||||
![]() | FDFC3N108 | 0,4100 | ![]() | 98 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 3a (ta) | 2,5 V, 4,5 V. | 70 Mohm @ 3a, 4,5 V. | 1,5 V @ 250 ähm | 4,9 NC @ 4,5 V. | ± 12 V | 355 PF @ 10 V. | Schottky Diode (Isolier) | - - - | |||||||||||||||||||||||||||||||||
![]() | SGR20N40LTM | 1.2500 | ![]() | 2783 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SGR20 | Standard | 45 w | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | - - - | Graben | 400 V | 150 a | 8v @ 4,5 V, 150a | - - - | - - - | |||||||||||||||||||||||||||||||||||
![]() | Fdn363n | 0,1700 | ![]() | 53 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | Supersot ™ -3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 100 v | 1a (TC) | 6 V, 10V | 240MOHM @ 1a, 10V | 4v @ 250 ähm | 5.2 NC @ 10 V | ± 20 V | 200 PF @ 25 V. | - - - | 500 MW (TC) | |||||||||||||||||||||||||||||||
![]() | FDMC15N06 | - - - | ![]() | 1274 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 55 v | 2,4a (TA), 15a (TC) | 10V | 900mohm @ 15a, 10V | 4v @ 250 ähm | 11,5 NC @ 10 V. | ± 20 V | 350 PF @ 25 V. | - - - | 2,3 W (TA), 35 W (TC) | ||||||||||||||||||||||||||||||||||
![]() | FQB44N10TM | 1.0000 | ![]() | 8553 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 43,5a (TC) | 10V | 39mohm @ 21.75a, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 25 V | 1800 PF @ 25 V. | - - - | 3,75W (TA), 146W (TC) | ||||||||||||||||||||||||||||||||||
![]() | FCPF260N65FL1 | 1.1400 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | FRFET®, Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 650 V | 15a (TC) | 10V | 260 MOHM @ 7,5A, 10V | 5v @ 1,5 mA | 60 nc @ 10 v | ± 20 V | 2340 PF @ 100 V | - - - | 36W (TC) | ||||||||||||||||||||||||||||||||||
![]() | TIP115TU | 0,4500 | ![]() | 940 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 60 v | 2 a | 2ma | PNP - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | - - - | |||||||||||||||||||||||||||||||||||||
![]() | KSP06TA-FS | - - - | ![]() | 1406 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 80 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 50 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||||
![]() | HUF75329D3 | 0,6100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 55 v | 20A (TC) | 10V | 26mohm @ 20a, 10V | 4v @ 250 ähm | 65 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 128W (TC) | |||||||||||||||||||||||||||||||||
![]() | GBPC1208W | 2.5000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | Standard | Gbpc-w | Herunterladen | Ear99 | 8541.10.0080 | 1 | 1,1 V @ 6 a | 5 µa @ 800 V | 12 a | Einphase | 800 V | ||||||||||||||||||||||||||||||||||||||||
![]() | PN5434 | 0,1500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 30pf @ 10v (VGS) | 25 v | 30 mA @ 15 V | 1 V @ 3 na | 10 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | 2N7002t | - - - | ![]() | 2887 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SC-89, SOT-490 | 2N7002 | MOSFET (Metalloxid) | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 60 v | 115 Ma (TA) | 5v, 10V | 7.5OHM @ 50 Ma, 5V | 2v @ 250 ähm | ± 20 V | 50 PF @ 25 V. | - - - | 200 MW (TA) | |||||||||||||||||||||||||||||||||
![]() | 2N3904RLRAH | 0,0200 | ![]() | 140 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-2N3904RLRAH-600039 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDD8447L | 0,4300 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 705 | N-Kanal | 40 v | 15,2a (TA), 50A (TC) | 4,5 V, 10 V. | 8.5Mohm @ 14a, 10V | 3v @ 250 ähm | 52 NC @ 10 V | ± 20 V | 1970 PF @ 20 V | - - - | 3.1W (TA), 44W (TC) | ||||||||||||||||||||||||||||||||||
![]() | Df04m | - - - | ![]() | 1339 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-EDIP (0,300 ", 7,62 mm) | Standard | 4-DIP | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-DF04M-600039 | 1 | 1,1 V @ 1 a | 5 µa @ 400 V | 1,5 a | Einphase | 400 V | |||||||||||||||||||||||||||||||||||||||
![]() | BZX55C20 | 0,0500 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 15 V | 20 v | 55 Ohm | |||||||||||||||||||||||||||||||||||||||
![]() | BCW30 | 1.0000 | ![]() | 4650 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 32 v | 500 mA | 100NA (ICBO) | PNP | 300 mV @ 500 µA, 10 mA | 215 @ 2MA, 5V | - - - | |||||||||||||||||||||||||||||||||||||
![]() | FDMF5808 | 1.0000 | ![]() | 4017 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | 3.000 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSA1406CSTU | - - - | ![]() | 1151 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,2 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 1.920 | 200 v | 100 ma | 100NA (ICBO) | PNP | 800mv @ 3ma, 30 mA | 40 @ 10 ma, 10V | 400 MHz | |||||||||||||||||||||||||||||||||||||
![]() | FDS7760A | 1.2300 | ![]() | 575 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 15a (ta) | 4,5 V, 10 V. | 5,5 MOHM @ 15a, 10V | 3v @ 250 ähm | 55 NC @ 5 V. | ± 20 V | 3514 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||||||||||
![]() | FDU8778 | 0,4700 | ![]() | 17 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 25 v | 35a (TC) | 4,5 V, 10 V. | 14mohm @ 35a, 10V | 2,5 V @ 250 ähm | 18 NC @ 10 V. | ± 20 V | 845 PF @ 13 V | - - - | 39W (TC) | |||||||||||||||||||||||||||||||||
![]() | BZX55C8V2 | 0,0500 | ![]() | 38 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 6 v | 8.2 v | 7 Ohm | |||||||||||||||||||||||||||||||||||||||
![]() | 1N962B | 2.3000 | ![]() | 75 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 131 | 5 µa @ 8,4 V | 11 v | 9,5 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | SFR9210TM | - - - | ![]() | 2073 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 200 v | 1,6a (TC) | 10V | 3OHM @ 800 mA, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 30 v | 285 PF @ 25 V. | - - - | 2,5 W (TA), 19W (TC) | |||||||||||||||||||||||||||||||
![]() | FQS4900TF | 0,5800 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FQS4900 | MOSFET (Metalloxid) | 2W | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N und p-kanal | 60 V, 300 V | 1,3a, 300 ma | 550MOHM @ 650 mA, 10V | 1,95 V @ 20 mA | 2.1nc @ 5v | - - - | - - - | |||||||||||||||||||||||||||||||||||
![]() | Si4466dy | - - - | ![]() | 2668 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 173 | N-Kanal | 20 v | 15a (ta) | 2,5 V, 4,5 V. | 7,5 MOHM @ 15a, 4,5 V. | 1,5 V @ 250 ähm | 66 NC @ 5 V. | ± 12 V | 4700 PF @ 10 V. | - - - | 1W (TA) | |||||||||||||||||||||||||||||||
![]() | 2SA2210-epn-1ex | 1.0000 | ![]() | 6435 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | K. Loch | To-220-3 Full Pack | 2SA2210 | 2 w | To-220F-3SG | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8541.29.0075 | 1 | 50 v | 20 a | 10 µA (ICBO) | PNP | 500mv @ 350 mA, 7a | 150 @ 1a, 2v | 140 MHz | ||||||||||||||||||||||||||||||||||
![]() | KSH200TF-FS | - - - | ![]() | 7217 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH200 | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100NA (ICBO) | Npn | 1,8 V @ 1a, 5a | 70 @ 500 mA, 1V | 65 MHz |
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