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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Geschwindigkeit | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FJA4213Rtu | 2.6300 | ![]() | 8519 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | 130 w | To-3p | Herunterladen | Ear99 | 8541.29.0095 | 1 | 250 V | 17 a | 5 µA (ICBO) | PNP | 3v @ 800 mA, 8a | 55 @ 1a, 5v | 30 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | FQD30N06TF | - - - | ![]() | 2403 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 21 | N-Kanal | 60 v | 22.7a (TC) | 10V | 45mohm @ 11.4a, 10V | 4v @ 250 ähm | 25 NC @ 10 V | ± 25 V | 945 PF @ 25 V. | - - - | 2,5 W (TA), 44W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FDMS8888 | - - - | ![]() | 4054 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 13,5a (TA), 21A (TC) | 4,5 V, 10 V. | 9,5 MOHM @ 13,5a, 10V | 2,5 V @ 250 ähm | 33 NC @ 10 V. | ± 20 V | 1585 PF @ 15 V | - - - | 2,5 W (TA), 42 W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | SS9014DBU | 0,0200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 450 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1 | 45 V | 100 ma | 50na (ICBO) | Npn | 300 mV @ 5ma, 100 mA | 60 @ 1ma, 5V | 270 MHz | |||||||||||||||||||||||||||||||||||||
![]() | FDI038AN06A0 | 2.9500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 17A (TA), 80A (TC) | 6 V, 10V | 3,8 MOHM @ 80A, 10V | 4v @ 250 ähm | 124 NC @ 10 V | ± 20 V | 6400 PF @ 25 V. | - - - | 310W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | MMBT6428 | - - - | ![]() | 4162 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 50 v | 500 mA | 100na | Npn | 600mv @ 5ma, 100 mA | 250 @ 100 µA, 5V | 700 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | FGPF70N30TDTU | 0,7800 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | Verkäfer undefiniert | 2156-FGPF70N30TDTU-600039 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDS6690A-NBNP006 | 0,2500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FDS6690A-NBNP006-600039 | Ear99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Bay72 | 0,0200 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0070 | 15.000 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 125 v | 1 V @ 100 mA | 50 ns | 100 na @ 100 v | 175 ° C (max) | 200 ma | 5PF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FGPF4536YDtu | - - - | ![]() | 2215 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4148ta | 0,0300 | ![]() | 32 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | 1N4148 | Standard | Do-35 | Herunterladen | Ear99 | 8541.10.0070 | 11.539 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 10 mA | 4 ns | 5 µa @ 75 V | 175 ° C (max) | 200 ma | 4PF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||
![]() | Es2d | - - - | ![]() | 5319 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214aa, SMB | Standard | SMB (Do-214AA) | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 900 mv @ 2 a | 20 ns | 5 µa @ 200 V. | -50 ° C ~ 150 ° C. | 2a | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | BC328 | 0,0600 | ![]() | 1460 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.083 | 25 v | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | BD242B | 0,2500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | - - - | K. Loch | To-220-3 | 2 w | To-220ab | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1,213 | 80 v | 3 a | 300 µA | PNP | 1,2 V @ 600 Ma, 3a | 25 @ 1a, 4V | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | FLZ13VB | 0,0200 | ![]() | 66 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 10 v | 12,9 v | 11,4 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | ISL9R1560S2 | - - - | ![]() | 5129 | 0.00000000 | Fairchild Semiconductor | Stealth ™ | Schüttgut | Veraltet | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Lawine | I2pak (to-262) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 81 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 2,2 V @ 15 a | 40 ns | 100 µA @ 600 V | -55 ° C ~ 175 ° C. | 15a | - - - | |||||||||||||||||||||||||||||||||||||
![]() | FDB2670 | 1.5300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 200 v | 19a (ta) | 10V | 130mohm @ 10a, 10V | 4,5 V @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1320 PF @ 100 V | - - - | 93W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FFA15U40DNTU | 0,7500 | ![]() | 1775 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | TO-3P-3, SC-65-3 | Standard | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 12 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 400 V | 15a | 1,4 V @ 15 a | 50 ns | 40 µa @ 400 V | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||
![]() | FQP9N25C | 1.0000 | ![]() | 4425 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 250 V | 8.8a (TC) | 10V | 430mohm @ 4.4a, 10V | 4v @ 250 ähm | 35 NC @ 10 V | ± 30 v | 710 PF @ 25 V. | - - - | 74W (TC) | |||||||||||||||||||||||||||||||||||
![]() | DFB25100 | - - - | ![]() | 6418 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, TS-6P | Standard | TS-6P | Herunterladen | 0000.00.0000 | 1 | 1,1 V @ 25 a | 10 µa @ 1 V | 25 a | Einphase | 1 kv | |||||||||||||||||||||||||||||||||||||||||||
![]() | FQD630TF | 0,3100 | ![]() | 207 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 200 v | 7a (TC) | 10V | 400mohm @ 3,5a, 10 V. | 4v @ 250 ähm | 25 NC @ 10 V | ± 25 V | 550 PF @ 25 V. | - - - | 2,5 W (TA), 46 W (TC) | |||||||||||||||||||||||||||||||||||
![]() | RHRG3060-F085 | - - - | ![]() | 5121 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | K. Loch | To-247-2 | Standard | To-247-2 | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 2.1 V @ 30 a | 45 ns | 250 µa @ 600 V | -55 ° C ~ 175 ° C. | 30a | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | ISL9R460PF2 | - - - | ![]() | 8157 | 0.00000000 | Fairchild Semiconductor | Stealth ™ | Schüttgut | Aktiv | K. Loch | To-220-2 Full Pack | Standard | To-220f-2l | Herunterladen | Ear99 | 8542.39.0001 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 2,4 V @ 4 a | 22 ns | 100 µA @ 600 V | -55 ° C ~ 150 ° C. | 4a | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | TIP30ATU | 0,1900 | ![]() | 3677 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1,247 | 60 v | 1 a | 200 µA | PNP | 700 MV @ 125 Ma, 1a | 15 @ 1a, 4V | 3MHz | |||||||||||||||||||||||||||||||||||||||
![]() | BZX79C4V3-T50A | - - - | ![]() | 3271 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6,98% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | - - - | Rohs Nick Konform | Nicht Anwendbar | Verkäfer undefiniert | 2156-BZX79C4V3-T50A | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 5 µa @ 1 V | 4.3 v | 90 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | FGP3040G2-F085 | - - - | ![]() | 9455 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, EcoSospark® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | Logik | 150 w | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | - - - | - - - | 400 V | 41 a | 1,25 V @ 4V, 6a | - - - | 21 NC | 900 ns/4,8 µs | ||||||||||||||||||||||||||||||||||||||
![]() | BZX55C2V7 | 0,0200 | ![]() | 17 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 7% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 17.780 | 1,3 V @ 100 mA | 10 µa @ 1 V | 2,7 v | 85 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | Rurd620ccs9a | - - - | ![]() | 9473 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Standard | To-252, (d-pak) | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 200 v | 6a | 1 V @ 6 a | 30 ns | 100 µA @ 200 V. | -65 ° C ~ 175 ° C. | ||||||||||||||||||||||||||||||||||||||||
![]() | NJVMJD45H11RLG-VF01 | 1.0000 | ![]() | 1181 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | Dpak | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-NJVMJD45H11RLG-VF01-600039 | 1 | 80 v | 8 a | 1 µA | PNP | 1v @ 400 mA, 8a | 40 @ 4a, 1V | 90 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | Fqi3p20TU | 0,7500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 200 v | 2.8a (TC) | 10V | 2,7OHM @ 1,4a, 10V | 5 V @ 250 ähm | 8 NC @ 10 V | ± 30 v | 250 PF @ 25 V. | - - - | 3.13W (TA), 52W (TC) |
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