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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | 1N757ATR | 0,0500 | ![]() | 54 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 5.000 | 1,5 V @ 200 Ma | 100 na @ 1 v | 9.1 v | 10 Ohm | |||||||||||||||||||||||||||||||||
![]() | 1N4750a | 0,0300 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 20 ° C. | K. Loch | Axial | 1 w | Axial | Herunterladen | Ear99 | 8541.10.0050 | 9.779 | 5 µa @ 20,6 V | 27 v | 35 Ohm | |||||||||||||||||||||||||||||||||||
![]() | BAS16HT1G | 1.0000 | ![]() | 8043 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-76, SOD-323 | Bas16 | Standard | SOD-323 | Herunterladen | Ear99 | 8541.10.0070 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1,25 V @ 150 mA | 6 ns | 1 µa @ 100 V. | -55 ° C ~ 150 ° C. | 200 ma | 2PF @ 0V, 1MHz | |||||||||||||||||||||||||||||||
![]() | BC33840BU | 0,0200 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 25 v | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 250 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||
![]() | KST24MTF | 0,0200 | ![]() | 5333 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.789 | 30 v | 100 ma | 50na (ICBO) | Npn | - - - | 30 @ 8ma, 10V | 620 MHz | |||||||||||||||||||||||||||||||
![]() | Fdn372s | 0,1500 | ![]() | 111 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 2.6a (TA) | 4,5 V, 10 V. | 40mohm @ 2,6a, 10V | 3V @ 1ma | 8.1 NC @ 5 V | ± 16 v | 630 PF @ 15 V | - - - | 500 MW (TA) | |||||||||||||||||||||||||||
![]() | Fep16jtd | 1.0000 | ![]() | 6909 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 | Standard | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 50 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Serie Verbindung | 600 V | 16a | 1,5 V @ 8 a | 50 ns | 10 µa @ 600 V | -55 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||
![]() | MMBT4401K | 0,0800 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 600 mA | - - - | Npn | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 1V | 250 MHz | |||||||||||||||||||||||||||||||
![]() | Fyp1004dntu | 0,4200 | ![]() | 88 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 | Schottky | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 50 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 40 v | 10a | 670 mv @ 10 a | 1 ma @ 40 v | -65 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||
![]() | KSD471ACGTA | 0,0600 | ![]() | 121 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 30 v | 1 a | 100NA (ICBO) | Npn | 500mv @ 100 mA, 1a | 200 @ 100ma, 1V | 130 MHz | |||||||||||||||||||||||||||||
![]() | IRFP254B | 0,6600 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 250 V | 25a (TC) | 10V | 140 MOHM @ 12.5A, 10V | 4v @ 250 ähm | 123 NC @ 10 V | ± 30 v | 3400 PF @ 25 V. | - - - | 221W (TC) | |||||||||||||||||||||||||
![]() | SFP9Z34 | - - - | ![]() | 2525 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | P-Kanal | 60 v | 18a (TC) | 10V | 140 MOHM @ 7A, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 30 v | 1155 PF @ 25 V. | - - - | 82W (TC) | |||||||||||||||||||||||||||
![]() | EGP20C | 0,2100 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | DO-204AC, DO-15, Axial | Standard | Do-15 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-EGP20C-600039 | 1.401 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 150 v | 950 mV @ 2 a | 50 ns | 5 µa @ 150 V | -65 ° C ~ 150 ° C. | 2a | 70pf @ 4V, 1 MHz | |||||||||||||||||||||||||||||||
![]() | TIP111TU | 1.0000 | ![]() | 7369 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 80 v | 2 a | 2ma | NPN - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | - - - | ||||||||||||||||||||||||||||||||
![]() | 1N5248BTR | 0,0200 | ![]() | 509 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 100 na @ 14 v | 18 v | 21 Ohm | ||||||||||||||||||||||||||||||||||
![]() | FDS9934C | - - - | ![]() | 2274 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS9934 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N und p-kanal | 20V | 6.5a, 5a | 30mohm @ 6,5a, 4,5 V. | 1,5 V @ 250 ähm | 9nc @ 4,5V | 650pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||||
![]() | SSP45N20A | 0,6800 | ![]() | 519 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-SSP45N20A | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 35a (TC) | 10V | 65mohm @ 17.5a, 10V | 4v @ 250 ähm | 152 NC @ 10 V | ± 30 v | 3940 PF @ 25 V. | - - - | 175W (TC) | |||||||||||||||||||||||||
![]() | KSC1623LMTF-FS | 0,0200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KSC1623 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | Npn | 300mv @ 10 mA, 100 mA | 300 @ 1ma, 6v | 250 MHz | ||||||||||||||||||||||||||||
![]() | NZT6714 | 0,0900 | ![]() | 59 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1 w | SOT-223-4 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.500 | 30 v | 2 a | 100NA (ICBO) | Npn | 500mv @ 100 mA, 1a | 60 @ 100 mA, 1V | - - - | |||||||||||||||||||||||||||||
![]() | HUF75617D3 | 0,2500 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 100 v | 16a (TC) | 10V | 90 MOHM @ 16A, 10V | 4v @ 250 ähm | 39 NC @ 20 V | ± 20 V | 570 PF @ 25 V. | - - - | 64W (TC) | |||||||||||||||||||||||||||
![]() | IRFS630B | 0,5200 | ![]() | 743 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-IRFS630B-600039 | 1 | |||||||||||||||||||||||||||||||||||||||||||
![]() | MPSW06 | - - - | ![]() | 1726 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 824 | 80 v | 500 mA | 500NA | Npn | 400mv @ 10 mA, 250 mA | 100 @ 100 mA, 1V | 50 MHz | |||||||||||||||||||||||||||||||
![]() | MMSZ5249BT1G | 0,0300 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | SOD-123 | 500 MW | SOD-123 | Herunterladen | Ear99 | 8541.10.0050 | 1 | 900 mv @ 10 mA | 100 na @ 14 v | 19 v | 23 Ohm | ||||||||||||||||||||||||||||||||||
![]() | SS9014CTA | - - - | ![]() | 6452 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 450 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 100 ma | 50na (ICBO) | Npn | 300 mV @ 5ma, 100 mA | 200 @ 1ma, 5V | 270 MHz | |||||||||||||||||||||||||||||||
![]() | RURD620CCS9A-SB82068 | 0,8700 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Standard | To-252, (d-pak) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.10.0080 | 2.500 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 200 v | 6a | 1 V @ 6 a | 30 ns | 100 µA @ 200 V. | -65 ° C ~ 175 ° C. | |||||||||||||||||||||||||||||||
![]() | FQB8N25TM | 0,5900 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 250 V | 8a (TC) | 10V | 550Mohm @ 4a, 10V | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 530 PF @ 25 V. | - - - | 3.13W (TA), 87W (TC) | |||||||||||||||||||||||||||
![]() | BZX79C3V3-T50A | 0,0200 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-BZX79C3V3-T50A-600039 | 1 | 1,5 V @ 100 mA | 25 µa @ 1 V | 3.3 v | 95 Ohm | |||||||||||||||||||||||||||||||||
![]() | BZX55C22 | 0,0600 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 17 v | 22 v | 55 Ohm | |||||||||||||||||||||||||||||||||
![]() | MPS6523 | - - - | ![]() | 5385 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 25 v | 100 ma | 50na (ICBO) | PNP | 500mv @ 5ma, 50 mA | 300 @ 2MA, 10V | - - - | |||||||||||||||||||||||||||||||
![]() | FJA4213Rtu | 2.6300 | ![]() | 8519 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | 130 w | To-3p | Herunterladen | Ear99 | 8541.29.0095 | 1 | 250 V | 17 a | 5 µA (ICBO) | PNP | 3v @ 800 mA, 8a | 55 @ 1a, 5v | 30 MHz |
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