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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | BU406TU-FS | - - - | ![]() | 7091 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | BU406 | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 5ma | Npn | 1v @ 500 mA, 5a | - - - | 10 MHz | |||||||||||||||||||||||||||||||||||||
![]() | KST3904MTF | 0,0200 | ![]() | 632 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KST39 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 40 v | 200 ma | - - - | Npn | 300mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 300 MHz | ||||||||||||||||||||||||||||||||||
![]() | GBPC3506W | - - - | ![]() | 5595 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | Standard | Gbpc-w | Herunterladen | 0000.00.0000 | 1 | 1,1 V @ 17.5 a | 5 µa @ 600 V | 35 a | Einphase | 600 V | |||||||||||||||||||||||||||||||||||||||||
![]() | BAV103 | 0,0300 | ![]() | 60 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-213aa | Standard | Do-213aa, Mini-Melf | Herunterladen | Ear99 | 8541.10.0070 | 11.010 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 200 v | 1,25 V @ 200 Ma | 50 ns | 5 µa @ 200 V. | -50 ° C ~ 175 ° C. | 200 ma | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | MJ11033g | 8.3900 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 200 ° C (TJ) | K. Loch | To-204ae | 300 w | To-204 (to-3) | Herunterladen | Ear99 | 8541.29.0095 | 36 | 120 v | 50 a | 2ma | PNP - Darlington | 3,5 V @ 500 Ma, 50a | 1000 @ 25a, 5v | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | 1N969B | 1.8400 | ![]() | 168 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 5 µa @ 16,7 V | 22 v | 29 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | KSA708CYTA | 1.0000 | ![]() | 9799 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 800 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 60 v | 700 Ma | 100NA (ICBO) | PNP | 700 mv @ 50 mA, 500 mA | 120 @ 500 mA, 2V | 50 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FDD2512 | 0,7500 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 150 v | 6.7a (ta) | 6 V, 10V | 420mohm @ 2,2a, 10 V | 4v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 344 PF @ 75 V | - - - | 42W (TA) | |||||||||||||||||||||||||||||||||
![]() | FFSP20120A | - - - | ![]() | 7277 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-2 | SIC (Silicon Carbide) Schottky | To-220ac | Herunterladen | Ear99 | 8542.39.0001 | 1 | Keine Erholungszeit> 500 mA (IO) | 1200 V | 1,75 V @ 20 a | 0 ns | 200 µA @ 1200 V | -55 ° C ~ 175 ° C. | 20a | 1220pf @ 1V, 100 kHz | ||||||||||||||||||||||||||||||||||||||
![]() | Es2a | - - - | ![]() | 3400 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214aa, SMB | Standard | SMB (Do-214AA) | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 50 v | 900 mv @ 2 a | 20 ns | 5 µa @ 50 V | -50 ° C ~ 150 ° C. | 2a | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | SSS4N60B | 1.0000 | ![]() | 1831 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FMG1G300US60L | 90.6600 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Modul | 892 w | Standard | - - - | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | - - - | 600 V | 300 a | 2,7 V @ 15V, 300A | 250 µA | NEIN | ||||||||||||||||||||||||||||||||||
![]() | FDAF62N28 | 2.5700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 280 v | 36a (TC) | 10V | 51Mohm @ 18a, 10V | 5 V @ 250 ähm | 100 nc @ 10 v | ± 30 v | 4630 PF @ 25 V. | - - - | 165W (TC) | |||||||||||||||||||||||||||||||||
![]() | FFD08S60S | 0,3600 | ![]() | 222 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 2.500 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Fdb6035al | 1.4600 | ![]() | 172 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 48a (ta) | 4,5 V, 10 V. | 12mohm @ 24a, 10V | 3v @ 250 ähm | 18 NC @ 5 V. | ± 20 V | 1250 PF @ 15 V | - - - | 52W (TC) | |||||||||||||||||||||||||||||||
![]() | MMBT2369 | - - - | ![]() | 7778 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 15 v | 200 ma | 400NA (ICBO) | Npn | 250 mV @ 1ma, 10 mA | 40 @ 10 Ma, 1V | - - - | |||||||||||||||||||||||||||||||||||
![]() | Fdd4n60nz | 1.0000 | ![]() | 3598 | 0.00000000 | Fairchild Semiconductor | UNIFET-II ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | - - - | 0000.00.0000 | 1 | N-Kanal | 600 V | 3.4a (TC) | 10V | 2,5OHM @ 1,7a, 10 V. | 5 V @ 250 ähm | 10.8 NC @ 10 V | ± 25 V | 510 PF @ 25 V. | - - - | 114W (TC) | |||||||||||||||||||||||||||||||||||
![]() | HUFA76633P3 | 1.0700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 100 v | 39a (TC) | 4,5 V, 10 V. | 35mohm @ 39a, 10V | 3v @ 250 ähm | 67 NC @ 10 V | ± 16 v | 1820 PF @ 25 V. | - - - | 145W (TC) | |||||||||||||||||||||||||||||||||
![]() | FDM3622 | 1.0000 | ![]() | 5205 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 100 v | 4,4a (TA) | 6 V, 10V | 60MOHM @ 4.4a, 10V | 4v @ 250 ähm | 17 NC @ 10 V | ± 20 V | 1090 PF @ 25 V. | - - - | 2.1W (TA) | |||||||||||||||||||||||||||||||||||
![]() | 1N4730atr | 0,0200 | ![]() | 129 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1N4730 | 1 w | Do-41 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 50 µa @ 1 V | 3,9 v | 9 Ohm | |||||||||||||||||||||||||||||||||||||
![]() | SS29FA | 0,1300 | ![]() | 9231 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | Oberflächenhalterung | SOD-123W | Schottky | SOD-123FA | Herunterladen | Ear99 | 8541.10.0080 | 1,711 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 90 v | 850 mV @ 2 a | 100 µa @ 90 V | -55 ° C ~ 150 ° C. | 2a | 120pf @ 4V, 1 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | SB530 | - - - | ![]() | 2713 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-201aa, Do-27, axial | SB53 | Schottky | Do-201 | Herunterladen | Ear99 | 8541.10.0080 | 869 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 30 v | 550 mV @ 5 a | 500 µa @ 30 V | -50 ° C ~ 150 ° C. | 5a | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | BS270 | - - - | ![]() | 7006 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MOSFET (Metalloxid) | To-92-3 | Herunterladen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 60 v | 400 mA (TA) | 4,5 V, 10 V. | 2OHM @ 500 mA, 10V | 2,5 V @ 250 ähm | ± 20 V | 50 PF @ 25 V. | - - - | 625 MW (TA) | |||||||||||||||||||||||||||||||||||
![]() | FDB6670AS | 1.9100 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 62a (ta) | 4,5 V, 10 V. | 8.5Mohm @ 31a, 10V | 3V @ 1ma | 39 NC @ 15 V | ± 20 V | 1570 PF @ 15 V | - - - | 62,5W (TC) | |||||||||||||||||||||||||||||||||
![]() | IRLM110ATF | 1.0000 | ![]() | 1456 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | MOSFET (Metalloxid) | SOT-223-4 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 100 v | 1,5a (TC) | 5v | 440MOHM @ 750 Ma, 5V | 2v @ 250 ähm | 8 NC @ 5 V | ± 20 V | 235 PF @ 25 V. | - - - | 2,2 W (TC) | |||||||||||||||||||||||||||||||||
![]() | MBR3045PT | 1.0000 | ![]() | 8285 | 0.00000000 | Fairchild Semiconductor | SwitchMode ™ | Schüttgut | Aktiv | K. Loch | To-218-3 | MBR3045 | Schottky | SOT-93 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 45 V | 15a | 600 mv @ 20 a | 1 ma @ 45 v | -65 ° C ~ 175 ° C. | |||||||||||||||||||||||||||||||||||
![]() | BC848BLT1G | - - - | ![]() | 4996 | 0.00000000 | Fairchild Semiconductor | BC848BLT1G | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 225 MW | SOT-23-3 (to-236) | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-BC848BLT1G-600039 | 1 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 100 MHz | |||||||||||||||||||||||||||||||||||||
![]() | KSA1220YSTU | - - - | ![]() | 6049 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,2 w | To-126 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 918 | 120 v | 1.2 a | 1 µA (ICBO) | PNP | 700mv @ 200 Ma, 1a | 160 @ 300 mA, 5V | 175MHz | |||||||||||||||||||||||||||||||||||||
![]() | MM3Z36VB | 0,0300 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 2% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1 V @ 10 mA | 45 NA @ 25.2 V. | 36 v | 84 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | NZT660 | 0,1900 | ![]() | 44 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 2 w | SOT-223-4 | Herunterladen | Ear99 | 8541.29.0075 | 1.609 | 60 v | 3 a | 100NA (ICBO) | PNP | 550 MV @ 300 Ma, 3a | 100 @ 500 mA, 2V | 75 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus