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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | Fqi1p50TU | 1.0000 | ![]() | 6883 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 500 V | 1,5a (TC) | 10V | 10.5OHM @ 750 mA, 10V | 5 V @ 250 ähm | 14 NC @ 10 V | ± 30 v | 350 PF @ 25 V. | - - - | 3.13W (TA), 63W (TC) | |||||||||||||||||||||||||||||||||||
![]() | HUFA76419S3S | 0,8300 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 29a (TC) | 4,5 V, 10 V. | 35mohm @ 29a, 10V | 3v @ 250 ähm | 28 NC @ 10 V | ± 16 v | 900 PF @ 25 V. | - - - | 75W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Mb10s | 0,2200 | ![]() | 317 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-269aa, 4-Besop | Standard | To-269aa Minidil Slim | Herunterladen | Ear99 | 8541.10.0080 | 1,347 | 1 V @ 400 mA | 5 µa @ 1 V | 500 mA | Einphase | 1 kv | ||||||||||||||||||||||||||||||||||||||||||
![]() | Bat54 | - - - | ![]() | 2679 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Bat54 | Schottky | SOT-23-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-bat54-600039 | Ear99 | 8541.10.0070 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 30 v | 800 mV @ 100 mA | 5 ns | 2 µa @ 25 V. | -55 ° C ~ 150 ° C. | 200 ma | 10pf @ 1V, 1 MHz | ||||||||||||||||||||||||||||||||||||
![]() | FQPF12N60T | 1.0500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 5.8a (TC) | 10V | 700 MOHM @ 2,9a, 10V | 5 V @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1900 PF @ 25 V. | - - - | 55W (TC) | |||||||||||||||||||||||||||||||||||
![]() | SS38 | - - - | ![]() | 3892 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AB, SMC | Schottky | SMC (Do-214AB) | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 80 v | 850 mv @ 3 a | 500 µa @ 80 V | -55 ° C ~ 150 ° C. | 3a | - - - | |||||||||||||||||||||||||||||||||||||||||
![]() | BDX33B | 0,5500 | ![]() | 1555 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 70 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 407 | 80 v | 10 a | 500 ähm | NPN - Darlington | 2,5 V @ 6ma, 3a | 750 @ 3a, 3v | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | FQB25N33TM-F085 | 1.8900 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 330 V | 25a (TC) | 10V | 230mohm @ 12.5a, 10V | 5 V @ 250 ähm | 75 NC @ 15 V | ± 30 v | 2010 PF @ 25 V | - - - | 3.1W (TA), 250 W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | Fqa7n80 | 1.4200 | ![]() | 780 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 800 V | 7.2a (TC) | 10V | 1,5OHM @ 3,6a, 10 V. | 5 V @ 250 ähm | 52 NC @ 10 V | ± 30 v | 1850 PF @ 25 V. | - - - | 198W (TC) | |||||||||||||||||||||||||||||||||||
![]() | ISL9R1560PF2 | - - - | ![]() | 1367 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-2 Full Pack | ISL9R1560 | Standard | To-220f-2l | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 2,2 V @ 15 a | 40 ns | 100 µA @ 600 V | -55 ° C ~ 150 ° C. | 15a | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | FDMC7570S | 1.4600 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Power33 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 25 v | 27a (TA), 40A (TC) | 4,5 V, 10 V. | 2mohm @ 27a, 10V | 3V @ 1ma | 68 NC @ 10 V. | ± 20 V | 4410 PF @ 13 V | - - - | 2,3 W (TA), 59W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | BC548CBU | 0,0200 | ![]() | 5245 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 8.500 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | BZX55C3V9 | 0,0400 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 2 µa @ 1 V | 3,9 v | 85 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | FDN3401 | - - - | ![]() | 1526 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | 3.000 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDD8878 | 0,4900 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 611 | N-Kanal | 30 v | 11a (ta), 40a (TC) | 4,5 V, 10 V. | 15mohm @ 35a, 10V | 2,5 V @ 250 ähm | 26 NC @ 10 V | ± 20 V | 880 PF @ 15 V | - - - | 40W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | BC307 | 0,0500 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 100 ma | 15na | PNP | 500 mV @ 5ma, 100 mA | 120 @ 2MA, 5V | 130 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | Fdpf3860tydtu | - - - | ![]() | 2275 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | MOSFET (Metalloxid) | To-220F-3 (Y-Forming) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 100 v | 20A (TC) | 10V | 38.2mohm @ 5.9a, 10V | 4,5 V @ 250 ähm | 35 NC @ 10 V | ± 20 V | 1800 PF @ 25 V. | - - - | 33.8W (TC) | |||||||||||||||||||||||||||||||||||
![]() | KSA708-YTA | - - - | ![]() | 1080 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 800 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0095 | 1 | 60 v | 700 Ma | 100NA (ICBO) | PNP | 700 mv @ 50 mA, 500 mA | 120 @ 50 Ma, 2V | 50 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | 1N962BTR | 0,0200 | ![]() | 4297 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0050 | 11.995 | 5 µa @ 8,4 V | 11 v | 9,5 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | FDP025N06 | 2.5400 | ![]() | 401 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 119 | N-Kanal | 60 v | 120a (TC) | 10V | 2,5 MOHM @ 75A, 10V | 4,5 V @ 250 ähm | 226 NC @ 10 V | ± 20 V | 14885 PF @ 25 V. | - - - | 395W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | 1N979B | 3.1500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 96 | 5 µA @ 42,6 V. | 56 v | 150 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | MPS8598 | 0,0900 | ![]() | 7207 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 599 | 60 v | 100 ma | 100na | PNP | 400mv @ 5 mA, 100 mA | 100 @ 1ma, 5V | 150 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FDPF7N50U | 0,8700 | ![]() | 335 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 5a (TC) | 10V | 1,5OHM @ 2,5a, 10 V. | 5 V @ 250 ähm | 16.6 NC @ 10 V. | ± 30 v | 940 PF @ 25 V. | - - - | 39W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Bay80 | 0,0200 | ![]() | 8133 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.10.0070 | 550 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 150 v | 1 V @ 150 mA | 60 ns | 100 NA @ 120 V | 175 ° C (max) | 200 ma | 6PF @ 0V, 1 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | KSP13TF | 1.0000 | ![]() | 7331 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 30 v | 500 mA | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | BC238CBU | 0,0200 | ![]() | 6133 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 10.000 | 25 v | 100 ma | 15na | Npn | 600mv @ 5ma, 100 mA | 380 @ 2MA, 5V | 250 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | Si4532dy | - - - | ![]() | 3306 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4532 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8541.29.0095 | 1 | N und p-kanal | 30V | 3,9a, 3,5a | 65mohm @ 3,9a, 10V | 3v @ 250 ähm | 15nc @ 10v | 235PF @ 10V | - - - | |||||||||||||||||||||||||||||||||||||
![]() | HGTP12N60A4D | 1.6800 | ![]() | 83 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Standard | 167 w | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 390 V, 12a, 10ohm, 15 V. | 30 ns | - - - | 600 V | 54 a | 96 a | 2,7 V @ 15V, 12a | 55 µJ (EIN), 50 µJ (AUS) | 78 NC | 17ns/96ns | ||||||||||||||||||||||||||||||||||||
![]() | FDMC7660S | 0,6100 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Power33 | Herunterladen | Ear99 | 8541.29.0095 | 491 | N-Kanal | 30 v | 20A (TA), 40A (TC) | 4,5 V, 10 V. | 2,2 MOHM @ 20A, 10V | 2,5 V @ 1ma | 66 NC @ 10 V | ± 20 V | 4325 PF @ 15 V | - - - | 2,3 W (TA), 41W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | Fqpf7n20l | 0,3100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 5a (TC) | 5v, 10V | 750 MOHM @ 2,5A, 10V | 2v @ 250 ähm | 9 NC @ 5 V | ± 20 V | 500 PF @ 25 V. | - - - | 37W (TC) |
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