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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FJC790TF | 0,1900 | ![]() | 49 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 4.000 | 40 v | 2 a | 100na | PNP | 450 MV @ 50 Ma, 2a | 300 @ 10ma, 2v | - - - | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSC2330obu | 0,0500 | ![]() | 120 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 500 | 300 V | 100 ma | 100NA (ICBO) | Npn | 500mv @ 1ma, 10 mA | 70 @ 20 mA, 10V | 50 MHz | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FFA20U20DNTU | 0,8500 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | TO-3P-3, SC-65-3 | Standard | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 30 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 200 v | 20a | 1,2 V @ 20 a | 40 ns | 20 µA @ 200 V. | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BD241CTU | 0,3200 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | BD241 | 40 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 100 v | 3 a | 300 µA | Npn | 1,2 V @ 600 Ma, 3a | 25 @ 1a, 4V | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Bay72tr | 0,0300 | ![]() | 110 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0070 | 8.663 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 125 v | 1 V @ 100 mA | 50 ns | 100 na @ 100 v | 175 ° C (max) | 200 ma | 5PF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDD6690S | 0,6300 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 40a (ta) | 10V | 16mohm @ 10a, 10V | 3V @ 1ma | 24 nc @ 10 v | ± 20 V | 2010 PF @ 15 V | - - - | 1,3W (TA) | |||||||||||||||||||||||||||||||||||||||||||
![]() | FDB6030BL | 3.2000 | ![]() | 82 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 40a (TC) | 4,5 V, 10 V. | 18MOHM @ 20A, 10V | 3v @ 250 ähm | 17 NC @ 5 V | ± 20 V | 1160 PF @ 15 V | - - - | 60 W (TC) | |||||||||||||||||||||||||||||||||||||||||||||
![]() | PN4391 | 1.0000 | ![]() | 1098 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 14pf @ 20V | 30 v | 50 mA @ 20 V | 4 V @ 1 na | 30 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSBM15SH60A | 18.5600 | ![]() | 119 | 0.00000000 | Fairchild Semiconductor | SPM® | Schüttgut | Aktiv | K. Loch | 32-Powerdip-Modul (1,370 ", 34,80 mm) | IGBT | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 48 | 3 Phase | 15 a | 600 V | 2500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX55C11 | 0,0500 | ![]() | 9821 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 Na @ 8,5 V. | 11 v | 20 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSD1616GTA | - - - | ![]() | 7609 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 50 v | 1 a | 100NA (ICBO) | Npn | 300 mV @ 50 Ma, 1a | 200 @ 100 Ma, 2V | 160 MHz | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX84C30 | - - - | ![]() | 5468 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BZX84C30 | 300 MW | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 100 na @ 21 V | 30 v | 80 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SGS13N60UFDtu | 0,5100 | ![]() | 118 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | SGS13 | Standard | 45 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 300 V, 6,5a, 50 Ohm, 15 V. | 55 ns | - - - | 600 V | 13 a | 52 a | 2,6 V @ 15V, 6,5a | 85 µJ (EIN), 95 µJ (AUS) | 25 NC | 20ns/70ns | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMS9408 | 0,6700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMS940 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDS6994s | 0,9200 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS69 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.500 | 2 n-kanal (dual) | 30V | 6.9a, 8.2a | 21mohm @ 6.9a, 10V | 3v @ 250 ähm | 12nc @ 5v | 800PF @ 15V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||||||||
FDW252p | - - - | ![]() | 6011 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | MOSFET (Metalloxid) | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | P-Kanal | 20 v | 8.8a (ta) | 2,5 V, 4,5 V. | 12,5 MOHM @ 8,8a, 4,5 V. | 1,5 V @ 250 ähm | 66 NC @ 4,5 V. | ± 12 V | 5045 PF @ 10 V | - - - | 1,3W (TA) | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BC33725BU | 0,0400 | ![]() | 85 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7.474 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||
FSB50550U | 6.9400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | SPM® | Rohr | Veraltet | K. Loch | 23-Powerdip-Modul (0,551 ", 14,00 mm) | Mosfet | Herunterladen | ROHS3 -KONFORM | Ear99 | 8542.39.0001 | 15 | 3 Phase | 2 a | 500 V | 1500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SFR9034TM | - - - | ![]() | 1457 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | Dpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 60 v | 14a (TC) | 10V | 140 MOHM @ 7A, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 25 V | 1155 PF @ 25 V. | - - - | 2,5 W (TA), 49W (TC) | |||||||||||||||||||||||||||||||||||||||||||
![]() | FDB9409-F085 | 1.0000 | ![]() | 2313 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 40 v | 80A (TC) | 10V | 3,5 MOHM @ 80A, 10V | 4v @ 250 ähm | 56 NC @ 10 V | ± 20 V | 2980 PF @ 25 V. | - - - | 94W (TJ) | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FCPF11N60T | - - - | ![]() | 9096 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | FCPF11 | MOSFET (Metalloxid) | To-220f | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | N-Kanal | 600 V | 11a (TC) | 10V | 380MOHM @ 5.5A, 10V | 5 V @ 250 ähm | 52 NC @ 10 V | ± 30 v | 1490 PF @ 25 V. | - - - | 36W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | KSB1366G | 0,2000 | ![]() | 2844 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 2 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.170 | 60 v | 3 a | 100 µA (ICBO) | PNP | 1v @ 200 Ma, 2a | 150 @ 500 mA, 5V | 9MHz | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSC2335Rtu | 1.0000 | ![]() | 2324 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 1,5 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 400 V | 7 a | 10 µA (ICBO) | Npn | 1v @ 600 mA, 3a | 20 @ 1a, 5V | - - - | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUF76437S3ST | 0,5200 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 71a (TC) | 4,5 V, 10 V. | 14mohm @ 71a, 10V | 3v @ 250 ähm | 71 NC @ 10 V | ± 16 v | 2230 PF @ 25 V. | - - - | 155W (TC) | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FDA38N30 | - - - | ![]() | 4934 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 300 V | 38a (TC) | 10V | 85mohm @ 19a, 10V | 5 V @ 250 ähm | 60 nc @ 10 v | ± 30 v | 2600 PF @ 25 V. | - - - | 312W (TC) | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FJNS3202RTA | - - - | ![]() | 5508 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 Kurzkörper | Fjns32 | 300 MW | To-92s | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 250 MHz | 10 Kohms | 10 Kohms | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSC1845PTA | 1.0000 | ![]() | 9449 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 120 v | 50 ma | 50na (ICBO) | Npn | 300 mV @ 1ma, 10 mA | 200 @ 1ma, 6v | 110 MHz | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1n5253b | 3.7600 | ![]() | 483 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 80 | 1,2 V @ 200 Ma | 100 na @ 19 V | 25 v | 35 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX85C13 | 0,0300 | ![]() | 89 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Ear99 | 8541.10.0050 | 10,230 | 1,2 V @ 200 Ma | 500 NA @ 9.1 V. | 13 v | 10 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDS6574a | - - - | ![]() | 6719 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDS6574a-600039 | 1 | N-Kanal | 20 v | 16a (ta) | 1,8 V, 4,5 V. | 6mohm @ 16a, 4,5 V. | 1,5 V @ 250 ähm | 105 NC @ 4,5 V | ± 8 v | 7657 PF @ 10 V | - - - | 1W (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus