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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FQAF40N25 | 2.9800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 250 V | 24a (TC) | 10V | 70 Mohm @ 12a, 10V | 5 V @ 250 ähm | 110 nc @ 10 v | ± 30 v | 4000 PF @ 25 V. | - - - | 108W (TC) | |||||||||||||||||||||||||||||
![]() | MPSL01 | - - - | ![]() | 3504 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 8.954 | 120 v | 200 ma | 1 µA (ICBO) | Npn | 300mv @ 5ma, 50 mA | 50 @ 10ma, 5v | 60 MHz | |||||||||||||||||||||||||||||||||
![]() | FFPF06U40STU | 0,3000 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-2 Full Pack | Standard | To-220f-2l | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 1.000 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 400 V | 1,4 V @ 6 a | 50 ns | 20 µA @ 400 V | -65 ° C ~ 150 ° C. | 6a | - - - | |||||||||||||||||||||||||||||||||
![]() | FJP2145TU | 1.0000 | ![]() | 4498 | 0.00000000 | Fairchild Semiconductor | ESBC ™ | Schüttgut | Aktiv | -55 ° C ~ 125 ° C (TJ) | K. Loch | To-220-3 | FJP214 | 120 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 800 V | 5 a | 10 µA (ICBO) | Npn | 2v @ 300 mA, 1,5a | 20 @ 200 Ma, 5V | 15 MHz | ||||||||||||||||||||||||||||||
![]() | HUFA75307D3S | 0,2100 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 55 v | 15a (TC) | 10V | 90 MOHM @ 15a, 10V | 4v @ 250 ähm | 20 NC @ 20 V | ± 20 V | 250 PF @ 25 V. | - - - | 45W (TC) | |||||||||||||||||||||||||||||
![]() | HUF75637S3ST | 1.4800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 44a (TC) | 10V | 30mohm @ 44a, 10V | 4v @ 250 ähm | 108 NC @ 20 V | ± 20 V | 1700 PF @ 25 V. | - - - | 155W (TC) | |||||||||||||||||||||||||||||
![]() | BC557BTF | - - - | ![]() | 5902 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 934 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||||||||||||
![]() | 2SC5242Rtu | 1,5000 | ![]() | 498 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | 130 w | To-3p | Herunterladen | Ear99 | 8541.29.0075 | 1 | 250 V | 17 a | 5 µA (ICBO) | Npn | 3v @ 800 mA, 8a | 55 @ 1a, 5v | 30 MHz | ||||||||||||||||||||||||||||||||||
![]() | FDB8870 | 1.0300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 23a (TA), 160a (TC) | 4,5 V, 10 V. | 3,9 MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 132 NC @ 10 V | ± 20 V | 5200 PF @ 15 V | - - - | 160W (TC) | ||||||||||||||||||||||||||||||
![]() | KSA1304Ytu | 0,2400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 20 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 150 v | 1,5 a | 10 µA (ICBO) | PNP | 1,5 V @ 50 Ma, 500 mA | 40 @ 500 mA, 10 V. | 4MHz | |||||||||||||||||||||||||||||||||
![]() | 1N976B | 1.8400 | ![]() | 33 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 5 µA @ 32,7 V. | 43 v | 93 Ohm | ||||||||||||||||||||||||||||||||||||
![]() | FQB7N30TM | 0,7800 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 300 V | 7a (TC) | 10V | 700 MOHM @ 3,5A, 10V | 5 V @ 250 ähm | 17 NC @ 10 V | ± 30 v | 610 PF @ 25 V. | - - - | 3.13W (TA), 85W (TC) | |||||||||||||||||||||||||||||
![]() | FCH25N60N | 3.7500 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | Supremos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8542.39.0001 | 80 | N-Kanal | 600 V | 25a (TC) | 10V | 126mohm @ 12.5a, 10V | 4v @ 250 ähm | 74 NC @ 10 V | ± 30 v | 3352 PF @ 100 V | - - - | 216W (TC) | ||||||||||||||||||||||||||||||
![]() | BC549BBU | - - - | ![]() | 7555 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||||||||
![]() | FDFMJ2P023Z | 0,3300 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WFDFN exponiert Pad | MOSFET (Metalloxid) | SC-75, Mikrofet | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 2,9a (ta) | 1,5 V, 4,5 V. | 112mohm @ 2,9a, 4,5 V. | 1V @ 250 ähm | 6,5 NC @ 4,5 V. | ± 8 v | 400 PF @ 10 V. | Schottky Diode (Isolier) | 1.4W (TA) | |||||||||||||||||||||||||||||
![]() | Irf610a | - - - | ![]() | 9339 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 3.3a (TC) | 10V | 1,5OHM @ 1,65A, 10V | 4v @ 250 ähm | 10 nc @ 10 v | ± 30 v | 210 PF @ 25 V. | - - - | 38W (TC) | |||||||||||||||||||||||||||
![]() | FDS8449-G | 0,5100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | - - - | Rohs Nick Konform | UnberÜHrt Ereichen | 2156 FDS8449-G | Ear99 | 8541.29.0095 | 1 | N-Kanal | 40 v | 7.6a (ta) | 4,5 V, 10 V. | 29mohm @ 7.6a, 10V | 3v @ 250 ähm | 11 NC @ 5 V | ± 20 V | 760 PF @ 20 V | - - - | 1W (TA) | |||||||||||||||||||||||||||
![]() | IRFS530A | 0,4500 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 10.7a (TC) | 10V | 110MOHM @ 5.35A, 10V | 4v @ 250 ähm | 36 NC @ 10 V | ± 20 V | 790 PF @ 25 V. | - - - | 32W (TC) | |||||||||||||||||||||||||||
![]() | SI3443DV | 0,1700 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | Hexfet® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Micro6 ™ (TSOP-6) | Herunterladen | Ear99 | 8541.29.0095 | 1.906 | P-Kanal | 20 v | 4,4a (TA) | 2,5 V, 4,5 V. | 65mohm @ 4,4a, 4,5 V. | 1,5 V @ 250 ähm | 15 NC @ 4,5 V | ± 12 V | 1079 PF @ 10 V. | - - - | 2W (TA) | ||||||||||||||||||||||||||||||
![]() | FDD6688 | 1.1100 | ![]() | 149 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 84a (ta) | 4,5 V, 10 V. | 5mohm @ 18a, 10V | 3v @ 250 ähm | 56 NC @ 10 V | ± 20 V | 3845 PF @ 15 V | - - - | 83W (TA) | ||||||||||||||||||||||||||||||
![]() | FJPF6806DTU | - - - | ![]() | 7696 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 40 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 750 V | 6 a | 1ma | Npn | 5v @ 1a, 4a | 4 @ 4a, 5v | - - - | |||||||||||||||||||||||||||||||||
![]() | BD244a | - - - | ![]() | 2717 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 65 w | To-220 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-BD244a-600039 | 1 | 60 v | 6 a | 700 ähm | PNP | 1,5 V @ 1a, 6a | 15 @ 3a, 4V | - - - | |||||||||||||||||||||||||||||||||
![]() | KSA709GTA | - - - | ![]() | 3660 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 150 v | 700 Ma | 100NA (ICBO) | PNP | 400mv @ 20 mA, 200 mA | 200 @ 50 Ma, 2V | 50 MHz | |||||||||||||||||||||||||||||||||
![]() | FDC655n | 0,1900 | ![]() | 78 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDC655 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | FDPF5N50UT | 0,6400 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | FRFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 470 | N-Kanal | 500 V | 4a (TC) | 10V | 2OHM @ 2a, 10V | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 650 PF @ 25 V. | - - - | 28W (TC) | ||||||||||||||||||||||||||||||
![]() | FSB50450S | 7.6400 | ![]() | 401 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 5 | Schüttgut | Aktiv | Oberflächenhalterung | 23-SMD-Modul, Möwenflügel | Mosfet | Herunterladen | Nicht Anwendbar | 3 (168 Stunden) | Reichweiite Betroffen | Ear99 | 8542.39.0001 | 43 | 3 Phase Wechselrichter | 1,5 a | 500 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||
![]() | FDP7045L | 3.0400 | ![]() | 167 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 100a (TJ) | 4,5 V, 10 V. | 4,5 MOHM @ 50A, 10V | 3v @ 250 ähm | 58 NC @ 5 V. | ± 20 V | 4357 PF @ 15 V | - - - | 107W (TA) | |||||||||||||||||||||||||||
![]() | RB751S40 | - - - | ![]() | 1295 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-79, SOD-523F | RB751 | Schottky | SOD-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0070 | 8.000 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 40 v | 370 mv @ 1 mA | 500 na @ 10 v | -55 ° C ~ 125 ° C. | 30 ma | - - - | |||||||||||||||||||||||||||||||
![]() | FJD3076TM | 0,2400 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FJD3076 | 1 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1,268 | 32 v | 2 a | 1 µA (ICBO) | Npn | 800mv @ 200 Ma, 2a | 130 @ 500 mA, 3V | 100 MHz | ||||||||||||||||||||||||||||||
![]() | FQD7N20LTM | - - - | ![]() | 2891 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 200 v | 5.5a (TC) | 5v, 10V | 750MOHM @ 2.75a, 10 V | 2v @ 250 ähm | 9 NC @ 5 V | ± 20 V | 500 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) |
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