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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Gewinnen | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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FSBF15CH60CT | 21.6800 | ![]() | 56 | 0.00000000 | Fairchild Semiconductor | Motion-SPM® | Rohr | Veraltet | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | - - - | Herunterladen | Nicht Anwendbar | Ear99 | 8542.39.0001 | 10 | - - - | - - - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDP7030BL | 0,6900 | ![]() | 72 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 436 | N-Kanal | 30 v | 60a (ta) | 4,5 V, 10 V. | 9mohm @ 30a, 10V | 3v @ 250 ähm | 24 nc @ 5 v | ± 20 V | 1760 PF @ 15 V | - - - | 60 W (TC) | ||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4752ATR | 0,0300 | ![]() | 9158 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Ear99 | 8541.10.0050 | 8,208 | 5 µA @ 25,1 V. | 33 v | 45 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FMC7G15US60 | - - - | ![]() | 4427 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Modul | 45 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 4 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 15 a | 2,8 V @ 15V, 15a | 250 µA | NEIN | 948 PF @ 30 V | |||||||||||||||||||||||||||||||||||||||||||
![]() | Ka33vta | 0,0500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 6% | -20 ° C ~ 75 ° C. | K. Loch | To-226-2, to-92-2 (to-226ac) | Ka33 | 200 MW | To-92-2 | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8542.39.0001 | 1 | 33 v | 25 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5393 | 0,0200 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | DO-204AC, DO-15, Axial | Standard | Do15/do204ac | Herunterladen | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 200 v | 1,3 V @ 1,5 a | 1,5 µs | 5 µa @ 200 V. | -50 ° C ~ 175 ° C. | 1,5a | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMA6023pzt | 0,3800 | ![]() | 369 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-udfn exponiert pad | FDMA6023 | MOSFET (Metalloxid) | 700 MW | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 792 | 2 p-kanal (dual) | 20V | 3.6a | 60MOHM @ 3,6a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 885PF @ 10V | Logikpegel -tor | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5232B | 0,0300 | ![]() | 37 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | 500 MW | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 5 µa @ 3 V | 5.6 v | 11 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDB039N06 | - - - | ![]() | 4318 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 120a (TC) | 10V | 3,9 MOHM @ 75A, 10V | 4,5 V @ 250 ähm | 133 NC @ 10 V | ± 20 V | 8235 PF @ 25 V. | - - - | 231W (TC) | ||||||||||||||||||||||||||||||||||||||||||||
![]() | TIP120TU-F129 | - - - | ![]() | 9032 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Ear99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBT918 | - - - | ![]() | 9946 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT918 | 225 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 15 dB | 15 v | 50 ma | Npn | 20 @ 3ma, 1V | 600 MHz | 6db @ 60MHz | ||||||||||||||||||||||||||||||||||||||||||||
![]() | RS1KFA | - - - | ![]() | 7709 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | Oberflächenhalterung | SOD-123W | RS1K | Standard | SOD-123FA | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 800 V | 1,3 V @ 800 mA | 500 ns | 5 µa @ 800 V | -55 ° C ~ 150 ° C. | 800 mA | 10pf @ 4v, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FMS7G15US60 | 20.4000 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Kasten | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 25 Uhr-aa | 73 w | DREIPHASENBRÜCKENGLECHRICHTER | 25 Uhr-aa | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 15 a | 2,7 V @ 15V, 15a | 250 µA | Ja | 935 PF @ 30 V | |||||||||||||||||||||||||||||||||||||||||||||
![]() | KSB1015Ytu | 0,4500 | ![]() | 735 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 25 w | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 735 | 60 v | 3 a | 100 µA (ICBO) | PNP | 1v @ 300 mA, 3a | 100 @ 500 mA, 5V | 9MHz | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GBPC25005W | 2.7900 | ![]() | 500 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | GBPC25005 | Standard | Gbpc-w | Herunterladen | Ear99 | 8541.10.0080 | 117 | 1,1 V @ 7,5 a | 5 µa @ 50 V | 25 a | Einphase | 50 v | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFI630BTU | 0,2300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 9a (TC) | 10V | 400 MOHM @ 4,5A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 30 v | 720 PF @ 25 V. | - - - | 3.13W (TA), 72W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | FQAF19N60 | 2.6500 | ![]() | 681 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 600 V | 11.2a (TC) | 10V | 380MOHM @ 5.6a, 10V | 5 V @ 250 ähm | 90 nc @ 10 v | ± 30 v | 3600 PF @ 25 V. | - - - | 120W (TC) | |||||||||||||||||||||||||||||||||||||||||||
![]() | FLZ39VA | 0,0200 | ![]() | 45 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 30 v | 35,6 v | 72 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SS8550BTA | 0,0200 | ![]() | 3697 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 2.000 | 25 v | 1,5 a | 100NA (ICBO) | PNP | 500mv @ 80 mA, 800 mA | 85 @ 100 mA, 1V | 200 MHz | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FGA30S120p | - - - | ![]() | 8010 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA30S120 | Standard | 348 w | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | - - - | TRABENFELD STOPP | 1300 v | 60 a | 150 a | 2,3 V @ 15V, 30a | - - - | 78 NC | - - - | ||||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA76409D3ST | 0,3800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101, Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Hufa76 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.500 | N-Kanal | 60 v | 18a (TC) | 4,5 V, 10 V. | 63mohm @ 18a, 10V | 3v @ 250 ähm | 15 NC @ 10 V | ± 16 v | 485 PF @ 25 V. | - - - | 49W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | FDY100PZ | - - - | ![]() | 9774 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-89, SOT-490 | MOSFET (Metalloxid) | SOT-523F | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 20 v | 350 Ma (TA) | 1,8 V, 4,5 V. | 1,2OHM @ 350 mA, 4,5 V. | 1,5 V @ 250 ähm | 1,4 NC @ 4,5 V. | ± 8 v | 100 PF @ 10 V | - - - | 625 MW (TA) | ||||||||||||||||||||||||||||||||||||||||||||
![]() | PN2222ANLBU | 1.0000 | ![]() | 3032 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 10.000 | 40 v | 1 a | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSBS10CH60SL | 13.8800 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | SPM® | Schüttgut | Aktiv | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | IGBT | FSBS10 | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 26 | 3 Phase | 10 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSB50825TB | 6.0700 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | SPM® | Schüttgut | Aktiv | K. Loch | 23-Powerdip-Modul (0,748 ", 19,00 mm) | Fet | FSB508 | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | 3 Phase | 4 a | 250 V | 1500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQB8N90CTM | 1.0000 | ![]() | 2139 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 900 V | 6.3a (TC) | 10V | 1,9ohm @ 3.15a, 10 V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 2080 PF @ 25 V. | - - - | 171W (TC) | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Irf630a | - - - | ![]() | 4655 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 9a (TC) | 10V | 400 MOHM @ 4,5A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 30 v | 650 PF @ 25 V. | - - - | 72W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | FDS4080N3 | 1.6600 | ![]() | 39 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 13a (ta) | 10V | 10.5MOHM @ 13A, 10V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 20 V | 1750 PF @ 20 V | - - - | 3W (TA) | |||||||||||||||||||||||||||||||||||||||||||
![]() | SB3100 | 0,2600 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-201aa, Do-27, axial | SB31 | Schottky | Do-201 | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 100 v | 780 mv @ 3 a | 600 µa @ 100 V. | -50 ° C ~ 150 ° C. | 3a | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SSR4N60BTF | 0,2100 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 600 V | 2.8a (TC) | 10V | 2,5OHM @ 1,4a, 10 V. | 4v @ 250 ähm | 29 NC @ 10 V | ± 30 v | 920 PF @ 25 V. | - - - | 2,5 W (TA), 49W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus