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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Spannung - Bewort | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Frequenz | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Aktuelle Bewertung (Verstärker) | Leistung - Ausgabe | Gewinnen | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | RAUSCHFIGUR | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | Fjy4007r | 0,0200 | ![]() | 4058 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | Fjy400 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 22 Kohms | 47 Kohms | |||||||||||||||||||||||||||||||||||||||||||
![]() | Fqaf8n80 | 1.6700 | ![]() | 557 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 800 V | 5.9a (TC) | 10V | 1,2OHM @ 2,95A, 10V | 5 V @ 250 ähm | 57 NC @ 10 V | ± 30 v | 2350 PF @ 25 V. | - - - | 107W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | Fqu10n20ltu | 0,4300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | N-Kanal | 200 v | 7.6a (TC) | 5v, 10V | 360 MOHM @ 3,8a, 10V | 2v @ 250 ähm | 17 NC @ 5 V | ± 20 V | 830 PF @ 25 V. | - - - | 2,5 W (TA), 51W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | ISL9N306AD3 | 0,8700 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 50a (TC) | 4,5 V, 10 V. | 6mohm @ 50a, 10V | 3v @ 250 ähm | 90 nc @ 10 v | ± 20 V | 3400 PF @ 15 V | - - - | 125W (TA) | |||||||||||||||||||||||||||||||||||||||
![]() | But12a | 0,9400 | ![]() | 820 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 100 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 200 | 450 V | 8 a | 1ma | Npn | 1,5 V @ 1,2a, 6a | - - - | - - - | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5254BTR | - - - | ![]() | 6698 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-1n5254btr-600039 | 1 | 100 na @ 21 V | 27 v | 41 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQD5N40TM | 0,4400 | ![]() | 157 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 400 V | 3.4a (TC) | 10V | 1,6OHM @ 1,7a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 460 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | Fne41060 | 9.6300 | ![]() | 63 | 0.00000000 | Fairchild Semiconductor | Motion-SPM® | Schüttgut | Aktiv | K. Loch | 26-Powerdip-Modul (1.024 ", 26,00 mm) | - - - | Herunterladen | Ear99 | 8542.39.0001 | 1 | - - - | - - - | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Fqi10n20ctu | 0,4100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 9,5a (TC) | 10V | 360MOHM @ 4.75a, 10V | 4v @ 250 ähm | 26 NC @ 10 V | ± 30 v | 510 PF @ 25 V. | - - - | 72W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | FDB8442 | 1.6700 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 28a (TA), 80A (TC) | 10V | 2,9 MOHM @ 80A, 10V | 4v @ 250 ähm | 235 NC @ 10 V | ± 20 V | 12200 PF @ 25 V. | - - - | 254W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | Df08m | - - - | ![]() | 3254 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | 4-EDIP (0,300 ", 7,62 mm) | Standard | DFM | Herunterladen | Ear99 | 8541.10.0080 | 1,202 | 1,1 V @ 1 a | 10 µa @ 800 V | 1 a | Einphase | 800 V | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBT2484 | - - - | ![]() | 7247 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT2484 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 60 v | 100 ma | 10NA (ICBO) | Npn | 350 mV @ 100 µA, 1 mA | 100 @ 10 µA, 5 V | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | FQB8N90CTM | 1.0000 | ![]() | 2139 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 900 V | 6.3a (TC) | 10V | 1,9ohm @ 3.15a, 10 V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 2080 PF @ 25 V. | - - - | 171W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | FSBS10CH60SL | 13.8800 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | SPM® | Schüttgut | Aktiv | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | IGBT | FSBS10 | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 26 | 3 Phase | 10 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSB50825TB | 6.0700 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | SPM® | Schüttgut | Aktiv | K. Loch | 23-Powerdip-Modul (0,748 ", 19,00 mm) | Fet | FSB508 | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | 3 Phase | 4 a | 250 V | 1500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Irf630a | - - - | ![]() | 4655 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 9a (TC) | 10V | 400 MOHM @ 4,5A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 30 v | 650 PF @ 25 V. | - - - | 72W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | S1KFP | 0,0700 | ![]() | 7976 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | Oberflächenhalterung | SOD-123H | S1K | Standard | SOD-123HE | Herunterladen | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 800 V | 1,3 V @ 1,2 a | 1,5 µs | 5 µa @ 800 V | -55 ° C ~ 150 ° C. | 1.2a | 18PF @ 0V, 1 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | MBR4035PT | 1.4100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | TO-3P-3, SC-65-3 | Schottky | To-3p | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 35 V | 40a | 700 mV @ 20 a | 1 ma @ 35 v | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDP13AN06A0_NL | - - - | ![]() | 4876 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 10.9a (TA), 62A (TC) | 6 V, 10V | 13,5 MOHM @ 62A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1350 PF @ 25 V. | - - - | 115W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | FDS7766s | 2.3900 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 17a (ta) | 4,5 V, 10 V. | 5,5 MOHM @ 17A, 10V | 3V @ 1ma | 58 NC @ 5 V. | ± 16 v | 4785 PF @ 15 V | - - - | 1W (TA) | |||||||||||||||||||||||||||||||||||||||
![]() | FDS7764a | 0,9900 | ![]() | 75 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 15a (ta) | 7,5 MOHM @ 15a, 4,5 V. | 2v @ 250 ähm | 40 NC @ 4,5 V. | 3451 PF @ 15 V | - - - | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | FPF1C2P5BF07A | 71.4300 | ![]() | 433 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | F1 -modul | FPF1C2 | MOSFET (Metalloxid) | 250W | F1 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 5 N-Kanal (Solarwechselrichter) | 650 V | 36a | 90 MOHM @ 27A, 10V | 3,8 V @ 250 ähm | - - - | - - - | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | KSH45H11TF | 1.0000 | ![]() | 4431 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH45 | 1,75 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 80 v | 8 a | 10 µA | PNP | 1v @ 400 mA, 8a | 40 @ 4a, 1V | 40 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | FJX4002RTF | 0,0200 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-70, SOT-323 | FJX400 | 200 MW | SC-70-3 (SOT323) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 200 MHz | 10 Kohms | 10 Kohms | |||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA75329S3ST | 0,4400 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 55 v | 49a (TC) | 10V | 24MOHM @ 49A, 10V | 4v @ 250 ähm | 75 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 128W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | 2n5950 | - - - | ![]() | 8947 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 30 v | K. Loch | To-226-3, bis 92-3 (to-226aa) | - - - | Jfet | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1 | N-Kanal | 15 Ma | - - - | - - - | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDM2509nz | 0,3700 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-udfn exponiert pad | FDM2509 | MOSFET (Metalloxid) | 800 MW | Mikrofet 2x2 Dünn | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 n-kanal (dual) | 20V | 8.7a | 18mohm @ 8,7a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 1200PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||||||
![]() | IRFM220BTF | 0,2900 | ![]() | 70 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | MOSFET (Metalloxid) | SOT-223-4 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 200 v | 1.13a (TC) | 10V | 800mohm @ 570 mA, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 30 v | 390 PF @ 25 V. | - - - | 2.4W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | FDMC0222 | 0,1400 | ![]() | 60 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMC02 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Es1h | 0,0900 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | Standard | Do-214AC (SMA) | Herunterladen | Ear99 | 8541.10.0080 | 3,209 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 500 V | 1,7 V @ 1 a | 35 ns | 5 µA @ 500 V | 150 ° C (max) | 1a | - - - |
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