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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | HUF75343S3 | 1.0000 | ![]() | 540 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 75a (TC) | 10V | 9mohm @ 75a, 10V | 4v @ 250 ähm | 205 NC @ 20 V | ± 20 V | 3000 PF @ 25 V. | - - - | 270W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Fp210-tl-e | 0,2400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FP210-TL-E-600039 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EGP20B | 0,2400 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | DO-204AC, DO-15, Axial | Standard | Do-15 | Herunterladen | Ear99 | 8541.10.0080 | 1,348 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 100 v | 950 mV @ 2 a | 50 ns | 5 µa @ 100 V. | -65 ° C ~ 150 ° C. | 2a | 70pf @ 4V, 1 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | BC32725TF | - - - | ![]() | 9485 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | BC856BMTF | - - - | ![]() | 3208 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC856 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 65 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||||||||||||||
![]() | Mm5z3v6 | 1.0000 | ![]() | 2573 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-mm5z3v6-600039 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DF02S1 | 0,2900 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 4-smd, Möwenflügel | Standard | 4-sdip | Herunterladen | Ear99 | 8541.10.0080 | 1.033 | 1,1 V @ 1 a | 3 µa @ 200 V. | 1 a | Einphase | 200 v | ||||||||||||||||||||||||||||||||||||||||||
![]() | PN3643 | 0,0400 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 30 v | 500 mA | 50na | Npn | 220 MV @ 15ma, 150 mA | 100 @ 150 mA, 10V | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | 1N5249BTR | 0,0200 | ![]() | 138 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 100 na @ 14 v | 19 v | 23 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | HUF75337P3 | - - - | ![]() | 2357 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 75a (TC) | 10V | 14mohm @ 75a, 10V | 4v @ 250 ähm | 109 NC @ 20 V | ± 20 V | 1775 PF @ 25 V. | - - - | 175W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FDPF7N60NZT | 0,6400 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | UNIFET-II ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 6,5a (TC) | 10V | 1,25OHM @ 3,25A, 10V | 5 V @ 250 ähm | 17 NC @ 10 V | ± 30 v | 730 PF @ 25 V. | - - - | 33W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | FSB70625 | 4.8000 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 7 | Schüttgut | Aktiv | Oberflächenhalterung | 27-Powerlqfn-Modul | Mosfet | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | Reichweiite Betroffen | Ear99 | 8542.39.0001 | 1.000 | 3 Phase Wechselrichter | 6.9 a | 1500 VRMs | |||||||||||||||||||||||||||||||||||||||||||
![]() | Fqu2n60ctltu | 0,3400 | ![]() | 5705 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 5 | N-Kanal | 600 V | 1,9a (TC) | 10V | 4.7ohm @ 950 mA, 10V | 4v @ 250 ähm | 12 NC @ 10 V | ± 30 v | 235 PF @ 25 V. | - - - | 2,5 W (TA), 44W (TC) | |||||||||||||||||||||||||||||||||
MMSZ5257B | 1.0000 | ![]() | 5408 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | SOD-123 | MMSZ52 | 500 MW | SOD-123 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 100 Na @ 25 V. | 5.1 v | 41 Ohm | |||||||||||||||||||||||||||||||||||||||
![]() | FDPF5N50UTYDtu | 0,6300 | ![]() | 49 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDPF5N | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
FCAS20DN60BB | 11.7500 | ![]() | 141 | 0.00000000 | Fairchild Semiconductor | SPM® | Rohr | Veraltet | K. Loch | 20-Powersip-Modul, Gebildete-Leads | IGBT | Herunterladen | ROHS3 -KONFORM | Ear99 | 8542.39.0001 | 11 | 2 Phase | 20 a | 600 V | 1500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Fqpf2n90 | 1.2000 | ![]() | 52 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 900 V | 1.4a (TC) | 10V | 7.2OHM @ 700 mA, 10V | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 500 PF @ 25 V. | - - - | 35W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Fqu6n25tu | 0,5500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | N-Kanal | 250 V | 4.4a (TC) | 10V | 1OHM @ 2,2a, 10V | 5 V @ 250 ähm | 8,5 NC @ 10 V | ± 30 v | 300 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FDB6030L | 0,4900 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 48a (ta) | 4,5 V, 10 V. | 13mohm @ 26a, 10V | 3v @ 250 ähm | 18 NC @ 5 V. | ± 20 V | 1250 PF @ 15 V | - - - | 52W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FQB7N65CTM | 1.4400 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 650 V | 7a (TC) | 10V | 1,4OHM @ 3,5a, 10 V. | 4v @ 250 ähm | 36 NC @ 10 V | ± 30 v | 1245 PF @ 25 V. | - - - | 173W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FQAF28N15 | 0,8000 | ![]() | 473 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 150 v | 22a (TC) | 10V | 90 MOHM @ 11A, 10V | 4v @ 250 ähm | 52 NC @ 10 V | ± 25 V | 1600 PF @ 25 V. | - - - | 102W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FJX3003RTF | 0,0200 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-70, SOT-323 | FJX300 | 200 MW | SC-70-3 (SOT323) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 56 @ 5ma, 5V | 250 MHz | 22 Kohms | 22 Kohms | |||||||||||||||||||||||||||||||||||||
![]() | FLZ12VC | 0,0200 | ![]() | 95 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 9 v | 12.1 v | 9,5 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | FDD6688S | 1.3900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 88a (ta) | 4,5 V, 10 V. | 5.1MOHM @ 18.5A, 10V | 3V @ 1ma | 81 NC @ 10 V | ± 20 V | 3290 PF @ 15 V | - - - | 69W (TA) | |||||||||||||||||||||||||||||||||||
![]() | 2N4124TFR | 0,0200 | ![]() | 2405 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 2156-2N4124TFR-FSTR | Ear99 | 8541.21.0075 | 2.000 | 25 v | 200 ma | 50na (ICBO) | Npn | 300mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 300 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FFPF60SB60DSTU | 0,3400 | ![]() | 946 | 0.00000000 | Fairchild Semiconductor | Stealth ™ | Rohr | Veraltet | K. Loch | To-220-3 Full Pack | Standard | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 946 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Serie Verbindung | 600 V | 4a | 2,6 V @ 4 a | 25 ns | 100 µA @ 600 V | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||
![]() | MMBT5962 | - - - | ![]() | 5656 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | - - - | Ear99 | 8541.21.0095 | 1 | 45 V | 100 ma | 2na (ICBO) | Npn | 200 MV @ 500 µA, 10 mA | 600 @ 10ma, 5V | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | MPS6521 | 0,0400 | ![]() | 116 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 5.000 | 25 v | 100 ma | 50na (ICBO) | Npn | 500mv @ 5ma, 50 mA | 300 @ 2MA, 10V | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | KSC3265OMTF | 0,0400 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 25 v | 800 mA | 100NA (ICBO) | Npn | 400 mv @ 20 mA, 500 mA | 100 @ 100 mA, 1V | 120 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | TIP121 | - - - | ![]() | 1846 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | TIP121 | 2 w | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 80 v | 5 a | 500 ähm | NPN - Darlington | 4v @ 20 mA, 5a | 1000 @ 3a, 3v | - - - |
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