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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Frequenz | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Aktuelle Bewertung (Verstärker) | Leistung - Ausgabe | Gewinnen | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | RAUSCHFIGUR | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Diodentyp | Spannung - Peak Reverse (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | MMBFJ175 | - - - | ![]() | 5205 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBFJ1 | 225 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | P-Kanal | - - - | 30 v | 7 ma @ 15 V | 3 v @ 10 na | 125 Ohm | ||||||||||||||||||||||||||||||||||||||||||||
FSB50550U | 6.9400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | SPM® | Rohr | Veraltet | K. Loch | 23-Powerdip-Modul (0,551 ", 14,00 mm) | Mosfet | Herunterladen | ROHS3 -KONFORM | Ear99 | 8542.39.0001 | 15 | 3 Phase | 2 a | 500 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDFS2P753Az | 0,5300 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 3a (ta) | 4,5 V, 10 V. | 115mohm @ 3a, 10V | 3v @ 250 ähm | 11 NC @ 10 V | ± 25 V | 455 PF @ 15 V | Schottky Diode (Isolier) | 3.1W (TA) | ||||||||||||||||||||||||||||||||||||||||||
![]() | FQB19N20CTM | 1.0000 | ![]() | 3683 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 200 v | 19A (TC) | 10V | 170MOHM @ 9.5A, 10V | 4v @ 250 ähm | 53 NC @ 10 V | ± 30 v | 1080 PF @ 25 V. | - - - | 3.13W (TA), 139W (TC) | |||||||||||||||||||||||||||||||||||||||||||
![]() | FSB50450at | 4.9700 | ![]() | 347 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 5 | Schüttgut | Aktiv | K. Loch | 23-Powerdip-Modul (0,748 ", 19,00 mm) | Mosfet | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 1,5 a | 500 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA76413D3S | 0,2700 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 49mohm @ 20a, 10V | 3v @ 250 ähm | 20 nc @ 10 v | ± 16 v | 645 PF @ 25 V. | - - - | 60 W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | FFB20UP20DN | 0,6300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Standard | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 800 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 200 v | 10a | 1,15 V @ 10 a | 40 ns | 10 µA @ 200 V. | -55 ° C ~ 175 ° C. | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | MJD32CTF | - - - | ![]() | 6296 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 833 | 100 v | 3 a | 50 µA | PNP | 1,2 V @ 375 Ma, 3a | 25 @ 1a, 4V | 3MHz | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FLZ13VC | 0,0200 | ![]() | 7129 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 8,515 | 1,2 V @ 200 Ma | 133 na @ 10 v | 13.3 v | 11,4 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mm3z5v1c | 0,0300 | ![]() | 195 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1 V @ 10 mA | 1,8 µa @ 2 V | 5.1 v | 56 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSAM20SL60 | 20.3900 | ![]() | 171 | 0.00000000 | Fairchild Semiconductor | SPM® | Schüttgut | Aktiv | K. Loch | 32-Powerdip-Modul (1,370 ", 34,80 mm) | IGBT | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 8 | 3 Phase | 20 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSD560RTSTU | 1.0000 | ![]() | 5438 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 1,5 w | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 100 v | 5 a | 1 µA (ICBO) | NPN - Darlington | 1,5 V @ 3ma, 3a | 2000 @ 3a, 2v | - - - | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMA1023PZ | - - - | ![]() | 3139 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | FDMA1023 | MOSFET (Metalloxid) | 700 MW | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 p-kanal (dual) | 20V | 3.7a | 72mohm @ 3,7a, 4,5 V. | 1,5 V @ 250 ähm | 12nc @ 4,5V | 655PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N458ATR | 0,0300 | ![]() | 278 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0070 | 11.539 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 150 v | 1 V @ 100 mA | 25 µa @ 125 V | 175 ° C (max) | 500 mA | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFS720B | 0,1800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 400 V | 3.3a (TJ) | 10V | 1,75OHM @ 1,65A, 10V | 4v @ 250 ähm | 18 NC @ 10 V. | ± 30 v | 600 PF @ 25 V. | - - - | 33W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | Flz18va | 0,0200 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 15.000 | 1,2 V @ 200 Ma | 133 na @ 13 v | 16.7 V | 19,4 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDZ7064A | 0,8500 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 30-WFBGA | MOSFET (Metalloxid) | 30-bga (4x3,5) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 13,5a (TA) | 4,5 V, 10 V. | 5.6mohm @ 13.5a, 10V | 3V @ 1ma | 51 NC @ 10 V | ± 20 V | 1960 PF @ 15 V | - - - | 2.2W (TA) | ||||||||||||||||||||||||||||||||||||||||||
![]() | BC556CBU | - - - | ![]() | 6600 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 11.478 | 65 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Irf820b | 1.0000 | ![]() | 7283 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSP06TA | 0,0500 | ![]() | 179 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-KSP06TA-600039 | 1 | 80 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 50 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX55C43 | 0,0200 | ![]() | 5665 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 7% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 32 V | 43 v | 90 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSD1621UTF | 0,1000 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 25 v | 2 a | 100NA (ICBO) | Npn | 400mv @ 75 mA, 1,5a | 280 @ 100 mA, 2V | 150 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | GBU6K | 0,5800 | ![]() | 1860 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | 4-ESIP, GBU | Standard | GBU | Herunterladen | Ear99 | 8541.10.0080 | 58 | 1 V @ 6 a | 5 µa @ 800 V | 4.2 a | Einphase | 800 V | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5400 | 0,0200 | ![]() | 6663 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-201ad, axial | Standard | Do-201ad | Herunterladen | ROHS3 -KONFORM | 2156-1n5400-Fstr | Ear99 | 8541.10.0080 | 1,250 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 50 v | 1,2 V @ 3 a | 5 µa @ 50 V | -55 ° C ~ 150 ° C. | 3a | 30pf @ 4v, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BF244C | 0,3400 | ![]() | 33 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | 450 MHz | - - - | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | - - - | 25ma | - - - | - - - | 1,5 dB | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | D45H2A | 0,7500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | D45H | 60 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 30 v | 8 a | 10 µA (ICBO) | PNP | 1v @ 400 mA, 8a | 100 @ 8a, 5V | 25 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | FQP5N30 | 0,4400 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 300 V | 5.4a (TC) | 10V | 900MOHM @ 2,7a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 430 PF @ 25 V. | - - - | 70W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | FNA51560TD3 | 10.3400 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | Motion SPM® 55 | Schüttgut | Aktiv | K. Loch | 20-Powerdip-Modul (1,220 ", 31,00 mm) | IGBT | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase Wechselrichter | 15 a | 600 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX55C16 | 0,0600 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 Na @ 12 V. | 16 v | 40 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDP047N08-F10 | 2.8600 | ![]() | 432 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDP047 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - |
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