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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Frequenz | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Aktuelle Bewertung (Verstärker) | Leistung - Ausgabe | Gewinnen | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | RAUSCHFIGUR | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | BC556CBU | - - - | ![]() | 6600 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 11.478 | 65 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | Irf820b | 1.0000 | ![]() | 7283 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSP06TA | 0,0500 | ![]() | 179 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-KSP06TA-600039 | 1 | 80 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 50 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | BZX55C43 | 0,0200 | ![]() | 5665 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 7% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 32 V | 43 v | 90 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | KSD1621UTF | 0,1000 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 25 v | 2 a | 100NA (ICBO) | Npn | 400mv @ 75 mA, 1,5a | 280 @ 100 mA, 2V | 150 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | GBU6K | 0,5800 | ![]() | 1860 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | 4-ESIP, GBU | Standard | GBU | Herunterladen | Ear99 | 8541.10.0080 | 58 | 1 V @ 6 a | 5 µa @ 800 V | 4.2 a | Einphase | 800 V | |||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5400 | 0,0200 | ![]() | 6663 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-201ad, axial | Standard | Do-201ad | Herunterladen | ROHS3 -KONFORM | 2156-1n5400-Fstr | Ear99 | 8541.10.0080 | 1,250 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 50 v | 1,2 V @ 3 a | 5 µa @ 50 V | -55 ° C ~ 150 ° C. | 3a | 30pf @ 4v, 1 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | BF244C | 0,3400 | ![]() | 33 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | 450 MHz | - - - | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | - - - | 25ma | - - - | - - - | 1,5 dB | ||||||||||||||||||||||||||||||||||||||||||
![]() | FQP5N30 | 0,4400 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 300 V | 5.4a (TC) | 10V | 900MOHM @ 2,7a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 430 PF @ 25 V. | - - - | 70W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | FNA51560TD3 | 10.3400 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | Motion SPM® 55 | Schüttgut | Aktiv | K. Loch | 20-Powerdip-Modul (1,220 ", 31,00 mm) | IGBT | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase Wechselrichter | 15 a | 600 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX55C16 | 0,0600 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 Na @ 12 V. | 16 v | 40 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | FDP047N08-F10 | 2.8600 | ![]() | 432 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDP047 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | KST63MTF | - - - | ![]() | 1399 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 500 mA | 100NA (ICBO) | PNP - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | KSC5504DTTU | 0,2200 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 75 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 600 V | 4 a | 100 µA | Npn | 1,5 V @ 400 mA, 2a | 4 @ 2a, 1V | 11 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | RFD14N05 | - - - | ![]() | 1030 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 50 v | 14a (TC) | 10V | 100mohm @ 14a, 10V | 4v @ 250 ähm | 40 NC @ 20 V | ± 20 V | 570 PF @ 25 V. | - - - | 48W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | FPDB50PH60 | 39.0400 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | PFC SPM® 3 | Rohr | Aktiv | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | IGBT | FPDB50 | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8542.39.0001 | 1 | 2 Phase | 30 a | 600 V | 2500 VRMs | ||||||||||||||||||||||||||||||||||||||||||
![]() | FJAFS1720TU | 2.8300 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | ESBC ™ | Schüttgut | Aktiv | -55 ° C ~ 125 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | FJAFS172 | 60 w | To-3Pf | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 800 V | 12 a | 100 µA | Npn | 250mv @ 3.33a, 10a | 8,5 @ 11a, 5V | 15 MHz | |||||||||||||||||||||||||||||||||||||
![]() | FDBL86563-F085 | - - - | ![]() | 8578 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerfn | MOSFET (Metalloxid) | 8-hpsof | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 240a (TC) | 10V | 1,5 MOHM @ 80A, 10V | 4v @ 250 ähm | 169 NC @ 10 V | ± 20 V | 10300 PF @ 30 V | - - - | 357W (TJ) | |||||||||||||||||||||||||||||||||||||
![]() | MMBT4401 | - - - | ![]() | 1454 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 15.000 | 40 v | 600 mA | 100na | Npn | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 1V | 250 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FDBL86210 | - - - | ![]() | 8016 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDBL862 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 2.000 | - - - | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQI19N20TU | 0,6700 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 19,4a (TC) | 10V | 150 MOHM @ 9.7a, 10V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 30 v | 1600 PF @ 25 V. | - - - | 3.13W (TA), 140W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | SS8050DBU | 0,1000 | ![]() | 313 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-92-3 | Herunterladen | Ear99 | 8541.29.0075 | 2.929 | 25 v | 1,5 a | 100NA (ICBO) | Npn | 500mv @ 80 mA, 800 mA | 160 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | Fp210-tl-e | 0,2400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FP210-TL-E-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EGP20B | 0,2400 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | DO-204AC, DO-15, Axial | Standard | Do-15 | Herunterladen | Ear99 | 8541.10.0080 | 1,348 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 100 v | 950 mV @ 2 a | 50 ns | 5 µa @ 100 V. | -65 ° C ~ 150 ° C. | 2a | 70pf @ 4V, 1 MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | BC32725TF | - - - | ![]() | 9485 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | BC856BMTF | - - - | ![]() | 3208 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC856 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 65 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | |||||||||||||||||||||||||||||||||||||
![]() | Mm5z3v6 | 1.0000 | ![]() | 2573 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-mm5z3v6-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DF02S1 | 0,2900 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 4-smd, Möwenflügel | Standard | 4-sdip | Herunterladen | Ear99 | 8541.10.0080 | 1.033 | 1,1 V @ 1 a | 3 µa @ 200 V. | 1 a | Einphase | 200 v | |||||||||||||||||||||||||||||||||||||||||||
![]() | PN3643 | 0,0400 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 30 v | 500 mA | 50na | Npn | 220 MV @ 15ma, 150 mA | 100 @ 150 mA, 10V | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | 1N5249BTR | 0,0200 | ![]() | 138 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 100 na @ 14 v | 19 v | 23 Ohm |
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