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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Geschwindigkeit | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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![]() | BZX85C22 | 0,0300 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | K. Loch | Do-204Al, Do-41, axial | BZX85C22 | 1,3 w | DO-41G | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 500 NA @ 16 V. | 22 v | 25 Ohm | |||||||||||||||||||||||||||||||||||||
![]() | FCH060N80-F155 | 1.0000 | ![]() | 3001 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247-3 | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 800 V | 56a (TC) | 10V | 60MOHM @ 29A, 10V | 4,5 V @ 5,8 mA | 350 NC @ 10 V | ± 20 V | 14685 PF @ 100 V | - - - | 500W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | FQD12N20TF | 0,5300 | ![]() | 6346 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5 | N-Kanal | 200 v | 9a (TC) | 10V | 280 MOHM @ 4,5A, 10V | 5 V @ 250 ähm | 23 NC @ 10 V | ± 30 v | 910 PF @ 25 V. | - - - | 2,5 W (TA), 55 W (TC) | ||||||||||||||||||||||||||||||||||
![]() | TN6714a | 0,2400 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.500 | 30 v | 2 a | 100NA (ICBO) | Npn | 500mv @ 100 mA, 1a | 50 @ 1a, 1V | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | MPS651 | - - - | ![]() | 8489 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 60 v | 800 mA | 100NA (ICBO) | Npn | 500mv @ 200 Ma, 2a | 75 @ 1a, 2v | 75 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FDZ3N513ZT | 0,3200 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 125 ° C (TJ) | Oberflächenhalterung | 4-XFBGA, WLCSP | MOSFET (Metalloxid) | 4-WLCSP (1x1) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | P-Kanal | 30 v | 1.1a | 462mohm @ 300 mA, 4,5 V. | 1,5 V @ 250 ähm | 1 NC @ 4,5 V. | +5,5 V, -300mv | 85 PF @ 15 V | Schottky Diode (Isolier) | 1W (TA) | |||||||||||||||||||||||||||||||||
![]() | HUF76419D3STR4921 | 0,5100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 37mohm @ 20a, 10V | 3v @ 250 ähm | 27,5 NC @ 10 V. | ± 16 v | 900 PF @ 25 V. | - - - | 75W (TC) | ||||||||||||||||||||||||||||||||
![]() | HUF75631S3S | 0,7000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | HUF75 | MOSFET (Metalloxid) | D²pak (to-263ab) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 33a (TC) | 10V | 40mohm @ 33a, 10V | 4v @ 250 ähm | 79 NC @ 20 V | ± 20 V | 1220 PF @ 25 V. | - - - | 120W (TC) | |||||||||||||||||||||||||||||||
![]() | FGB40N6S2T | 3.4400 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Standard | 290 w | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | 390 V, 20A, 3OHM, 15 V. | - - - | 600 V | 75 a | 180 a | 2,7 V @ 15V, 20a | 115 µj (Ein), 195 um (AUS) | 35 NC | 8ns/35ns | |||||||||||||||||||||||||||||||||||
![]() | FDI038AN06A0_NL | 3.8100 | ![]() | 169 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 17A (TA), 80A (TC) | 6 V, 10V | 3,8 MOHM @ 80A, 10V | 4v @ 250 ähm | 124 NC @ 10 V | ± 20 V | 6400 PF @ 25 V. | - - - | 310W (TC) | ||||||||||||||||||||||||||||||||
![]() | Mm5z47v | 0,0200 | ![]() | 111 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 6% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | SC-79, SOD-523F | MM5Z4 | 200 MW | SOD-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 8.000 | 50 NA @ 32.9 V. | 47 v | 170 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | Mm5z3v3 | 1.0000 | ![]() | 4066 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 6,06% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | SC-79, SOD-523 | 200 MW | SOD-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 8.000 | 5 µa @ 1 V | 3.3 v | 95 Ohm | |||||||||||||||||||||||||||||||||||||||
![]() | Fqpf7p06 | 0,4100 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | P-Kanal | 60 v | 5.3a (TC) | 10V | 410mohm @ 2,65a, 10V | 4v @ 250 ähm | 8.2 NC @ 10 V | ± 25 V | 295 PF @ 25 V. | - - - | 24W (TC) | ||||||||||||||||||||||||||||||||||
![]() | FQB7N60TM-WS | 0,9800 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | - - - | Verkäfer undefiniert | Verkäfer undefiniert | 2156-FQB7N60TM-WS-600039 | 1 | N-Kanal | 600 V | 7.4a (TC) | 10V | 1ohm @ 3.7a, 10V | 5 V @ 250 ähm | 38 nc @ 10 v | ± 30 v | 1430 PF @ 25 V. | - - - | 3.13W (TA), 142W (TC) | ||||||||||||||||||||||||||||||||||
![]() | SS9018HBU-FS | 0,0200 | ![]() | 384 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 400 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 1 | - - - | 15 v | 50 ma | Npn | 28 @ 1ma, 5V | 1,1 GHz | - - - | ||||||||||||||||||||||||||||||||||||
![]() | Flz13va | 0,0200 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 16.705 | 1,2 V @ 200 Ma | 133 na @ 10 v | 12,5 v | 11,4 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | BC548BU | 0,0400 | ![]() | 56 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7.882 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FCPF20N60ST | - - - | ![]() | 1253 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Schüttgut | Aktiv | - - - | K. Loch | To-220-3 Full Pack | FCPF20 | MOSFET (Metalloxid) | To-220f | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 20A (TC) | - - - | - - - | - - - | - - - | |||||||||||||||||||||||||||||||||||
![]() | PN2907ara | 0,0200 | ![]() | 1868 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | PN2907 | 625 MW | To-92 (to-226) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 4.000 | 60 v | 800 mA | 50na | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | |||||||||||||||||||||||||||||||||||
![]() | Mur460ffg | 1.0000 | ![]() | 4059 | 0.00000000 | Fairchild Semiconductor | SwitchMode ™ | Schüttgut | Aktiv | K. Loch | Do-201aa, Do-27, axial | Standard | Axial | Herunterladen | Ear99 | 8542.39.0001 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,28 V @ 4 a | 75 ns | 10 µa @ 600 V | -65 ° C ~ 175 ° C. | 4a | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | BZX55C7V5_NL | 0,0200 | ![]() | 8115 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 5 v | 7,5 v | 7 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | Fqpf5n80 | 0,7700 | ![]() | 610 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 2.8a (TC) | 10V | 2,6OHM @ 1,4a, 10 V. | 5 V @ 250 ähm | 33 NC @ 10 V. | ± 30 v | 1250 PF @ 25 V. | - - - | 47W (TC) | ||||||||||||||||||||||||||||||||||
![]() | SGP5N60RUFTU | 0,5100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SGP6N | Standard | 60 w | To-220 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | 300 V, 5a, 40 Ohm, 15 V | - - - | 600 V | 8 a | 15 a | 2,8 V @ 15V, 5a | 24 NC | 13ns/34ns | |||||||||||||||||||||||||||||||||
![]() | FQD5N30TF | 0,3700 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 300 V | 4.4a (TC) | 10V | 900mohm @ 2.2a, 10 V. | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 430 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | ||||||||||||||||||||||||||||||||||
![]() | KSB1151YSTU | 0,3900 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,3 w | To-126-3 | Herunterladen | Ear99 | 8542.39.0001 | 831 | 60 v | 5 a | 10 µA (ICBO) | PNP | 300mv @ 200 Ma, 2a | 160 @ 2a, 1V | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | MMBT3906 | - - - | ![]() | 9960 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT | 250 MW | SOT-23-3 (to-236) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 40 v | 200 ma | 50na | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | |||||||||||||||||||||||||||||||||||
![]() | IRF630A_CP001 | 0,4000 | ![]() | 227 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Irf630 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX85C24 | 0,0300 | ![]() | 69 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | K. Loch | Do-204Al, Do-41, axial | BZX85C24 | 1,3 w | DO-41G | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1.000 | 1,2 V @ 200 Ma | 500 NA @ 18 V. | 24 v | 25 Ohm | |||||||||||||||||||||||||||||||||||||
![]() | FDPF51N25YDtu | 1.9700 | ![]() | 566 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | MOSFET (Metalloxid) | To-220F-3 (Y-Forming) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 250 V | 51a (TC) | 10V | 60MOHM @ 25.5A, 10V | 5 V @ 250 ähm | 70 nc @ 10 v | ± 30 v | 3410 PF @ 25 V. | - - - | 38W (TC) | |||||||||||||||||||||||||||||||||||
![]() | KSB564ACGTA | 0,0200 | ![]() | 5217 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 514 | 25 v | 1 a | 100NA (ICBO) | PNP | 500mv @ 100 mA, 1a | 200 @ 100ma, 1V | 110 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
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