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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FQA7N90 | 1.4900 | ![]() | 939 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 900 V | 7.4a (TC) | 10V | 1,55 Ohm @ 3,7a, 10 V | 5 V @ 250 ähm | 59 NC @ 10 V | ± 30 v | 2280 PF @ 25 V. | - - - | 198W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | 1N757a | 2.0800 | ![]() | 133 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 145 | 1,5 V @ 200 Ma | 100 na @ 1 v | 9.1 v | 10 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMS3602s | 1.7100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS3602 | MOSFET (Metalloxid) | 1W | Power56 | Herunterladen | Ear99 | 8542.39.0001 | 192 | 2 n-kanal (dual) | 25 v | 15a, 26a | 5.6mohm @ 15a, 10V | 3v @ 250 ähm | 27nc @ 10v | 1680pf @ 13v | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||||||
![]() | SI3447DV | - - - | ![]() | 8313 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 5.5a (TA) | 1,8 V, 4,5 V. | 33mohm @ 5,5a, 4,5 V. | 1,5 V @ 250 ähm | 30 NC @ 4,5 V. | ± 8 v | 1926 PF @ 10 V. | - - - | 800 MW (TA) | ||||||||||||||||||||||||||||||||||||||
![]() | KSP92BU | 0,0500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0095 | 6,073 | 300 V | 500 mA | 250na (ICBO) | PNP | 500 mv @ 2MA, 20 mA | 25 @ 30 Ma, 10V | 50 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Fdd5n50ftm | 0,7500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 500 V | 3,5a (TC) | 10V | 1,55 Ohm @ 1,75a, 10 V | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 650 PF @ 25 V. | - - - | 40W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | MMBT5551 | 0,0400 | ![]() | 227 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 160 v | 600 mA | 50na (ICBO) | Npn | 200mv @ 5ma, 50 mA | 80 @ 10ma, 5V | 100 MHz | ||||||||||||||||||||||||||||||||||||||||||
SI6963DQ | 0,2300 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | SI6963 | MOSFET (Metalloxid) | 600 MW (TA) | 8-tssop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 1 | 2 p-kanal (dual) | 20V | 3.8a (TA) | 43mohm @ 3,8a, 4,5 V. | 1,5 V @ 250 ähm | 16nc @ 4,5V | 1015PF @ 10V | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | BZX85C18 | 0,0300 | ![]() | 61 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 1,2 V @ 200 Ma | 500 NA @ 12,5 V. | 18 v | 20 Ohm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | BC32725 | 0,0600 | ![]() | 53 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Fqpf10n20 | 0,4100 | ![]() | 3066 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 16 | N-Kanal | 200 v | 6.8a (TC) | 10V | 360Mohm @ 3.4a, 10V | 5 V @ 250 ähm | 18 NC @ 10 V. | ± 30 v | 670 PF @ 25 V. | - - - | 40W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | IRFP460C | - - - | ![]() | 8134 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 500 V | 20A (TC) | 10V | 240Mohm @ 10a, 10V | 4v @ 250 ähm | 170 nc @ 10 v | ± 30 v | 6000 PF @ 25 V. | - - - | 235W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | FQAF7N90 | 1.4700 | ![]() | 877 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 900 V | 5.2a (TC) | 10V | 1,55 Ohm bei 2,6a, 10 V | 5 V @ 250 ähm | 59 NC @ 10 V | ± 30 v | 2280 PF @ 25 V. | - - - | 107W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | HUF75344P3_NL | 1.1800 | ![]() | 312 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 210 NC @ 20 V | ± 20 V | 3200 PF @ 25 V. | - - - | 285W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | FDP3205 | 1.1800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 55 v | 100a (TC) | 10V | 7,5 MOHM @ 59A, 10V | 5,5 V @ 250 ähm | 120 nc @ 10 v | ± 20 V | 7730 PF @ 25 V. | - - - | 150W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | FCPF190N60-F152 | - - - | ![]() | 5550 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FCPF190N60-F152 | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 20,2a (TC) | 10V | 199mohm @ 10a, 10V | 3,5 V @ 250 ähm | 74 NC @ 10 V | ± 20 V | 2950 PF @ 25 V. | - - - | 39W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | BCX70J | 0,0300 | ![]() | 7992 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 490 | 45 V | 200 ma | 20na | Npn | 550 MV @ 1,25 mA, 50 mA | 250 @ 2MA, 5V | 125 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | 1n5243b | 0,0300 | ![]() | 55 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 900 MV @ 200 Ma | 500 NA @ 9.9 V. | 13 v | 13 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Ffpf15u20stu | 1.0000 | ![]() | 2855 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-2 Full Pack | Standard | To-220f-2l | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 1,2 V @ 15 a | 40 ns | 15 µA @ 200 V. | -65 ° C ~ 150 ° C. | 15a | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | FDU6676as | 0,2700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 30 v | 90a (TA) | 4,5 V, 10 V. | 5.8mohm @ 16a, 10V | 3v @ 250 ähm | 64 NC @ 10 V | ± 20 V | 2470 PF @ 15 V | - - - | 70W (TA) | ||||||||||||||||||||||||||||||||||||||||
![]() | HUFA76409D3S | 0,2500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1,224 | N-Kanal | 60 v | 18a (TC) | 4,5 V, 10 V. | 63mohm @ 18a, 10V | 3v @ 250 ähm | 15 NC @ 10 V | ± 16 v | 485 PF @ 25 V. | - - - | 49W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | S3GB | - - - | ![]() | 8955 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | Oberflächenhalterung | Do-214aa, SMB | Standard | Do-214AA (SMB) | Herunterladen | Ear99 | 8541.10.0080 | 622 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 400 V | 1,15 V @ 3 a | 1,5 µs | 10 µa @ 400 V | -55 ° C ~ 150 ° C. | 3a | 18PF @ 0V, 1 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMA6023pzt | 0,3800 | ![]() | 369 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-udfn exponiert pad | FDMA6023 | MOSFET (Metalloxid) | 700 MW | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 792 | 2 p-kanal (dual) | 20V | 3.6a | 60MOHM @ 3,6a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 885PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||||||
![]() | FJV4102RMTF | 0,0300 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV410 | 200 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 200 MHz | 10 Kohms | 10 Kohms | ||||||||||||||||||||||||||||||||||||||||
![]() | FMS7G20US60 | - - - | ![]() | 5436 | 0.00000000 | Fairchild Semiconductor | - - - | Kasten | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 25 Uhr-aa | 89 w | DREIPHASENBRÜCKENGLECHRICHTER | 25 Uhr-aa | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 20 a | 2,7 V @ 15V, 20a | 250 µA | Ja | 1.277 NF @ 30 V | ||||||||||||||||||||||||||||||||||||||||||
![]() | KBU4B | 1.0000 | ![]() | 4810 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, KBU | Standard | KBU | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 200 | 1 V @ 4 a | 5 µa @ 50 V | 4 a | Einphase | 100 v | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | HGTG12N60A4 | - - - | ![]() | 4457 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 167 w | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 150 | 390 V, 12a, 10ohm, 15 V. | - - - | 600 V | 54 a | 96 a | 2,7 V @ 15V, 12a | 55 µJ (EIN), 50 µJ (AUS) | 78 NC | 17ns/96ns | |||||||||||||||||||||||||||||||||||||||||
![]() | Irfw520atm | 0,4000 | ![]() | 774 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 774 | N-Kanal | 100 v | 9.2a (TC) | 10V | 200mohm @ 4.6a, 10V | 4v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 480 PF @ 25 V. | - - - | 3,8 W (TA), 45W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | FGPF4536 | 0,7300 | ![]() | 104 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 Full Pack | Standard | 28,4 w | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | - - - | Graben | 360 V | 220 a | 1,8 V @ 15V, 50a | - - - | 47 NC | - - - | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FQP4N50 | 0,2700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Nicht Anwendbar | UnberÜHrt Ereichen | 2156-FQP4N50-600039 | 1 | N-Kanal | 500 V | 3.4a (TC) | 10V | 2,7OHM @ 1,7a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 460 PF @ 25 V. | - - - | 70W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus