Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | FDB7042L | 0,6000 | ![]() | 119 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 50a (ta) | 4,5 V, 10 V. | 7.5Mohm @ 25a, 10V | 2v @ 250 mA | 51 NC @ 4,5 V. | ± 12 V | 2418 PF @ 15 V | - - - | 83W (TA) | |||||||||||||||||||||||||||||||
FDZ2553n | 0,5900 | ![]() | 135 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-WFBGA | FDZ25 | MOSFET (Metalloxid) | 2.1W | 18-bga (2,5 x 4) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 20V | 9.6a | 14mohm @ 9,6a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 1299pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||||||||||
![]() | 2SC5242Rtu | 1,5000 | ![]() | 498 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | 130 w | To-3p | Herunterladen | Ear99 | 8541.29.0075 | 1 | 250 V | 17 a | 5 µA (ICBO) | Npn | 3v @ 800 mA, 8a | 55 @ 1a, 5v | 30 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | Es1h | 0,0900 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | Standard | Do-214AC (SMA) | Herunterladen | Ear99 | 8541.10.0080 | 3,209 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 500 V | 1,7 V @ 1 a | 35 ns | 5 µA @ 500 V | 150 ° C (max) | 1a | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FLZ30VA | 0,0200 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 23 v | 27.7 V | 46 Ohm | |||||||||||||||||||||||||||||||||||||||
![]() | KSC5030FRTU | 0,9000 | ![]() | 7247 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | - - - | K. Loch | TO-3P-3 Full Pack | 60 w | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 300 | 800 V | 6 a | 10 µA (ICBO) | Npn | 2v @ 600 mA, 3a | 10 @ 600 mA, 5V | - - - | |||||||||||||||||||||||||||||||||||||
![]() | Mm3z3v3b | 1.0000 | ![]() | 5106 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 2% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | Mm3z3v3 | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1 V @ 10 mA | 4,5 µa @ 1 V | 3.3 v | 89 Ohm | |||||||||||||||||||||||||||||||||||||||
![]() | KSP2222ATA | 0,0500 | ![]() | 96 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 6,497 | 40 v | 600 mA | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | Fqpf5p10 | 0,3400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | P-Kanal | 100 v | 2,9a (TC) | 10V | 1,05 OHM @ 1,45A, 10V | 4v @ 250 ähm | 8.2 NC @ 10 V | ± 30 v | 250 PF @ 25 V. | - - - | 23W (TC) | |||||||||||||||||||||||||||||||||
![]() | BZX85C11 | 0,0300 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Ear99 | 8541.10.0050 | 11.095 | 1,2 V @ 200 Ma | 500 NA @ 7.7 V. | 11 v | 8 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | FDPF15N65 | - - - | ![]() | 2828 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 650 V | 15a (TC) | 10V | 440MOHM @ 7.5a, 10V | 5 V @ 250 ähm | 63 NC @ 10 V | ± 30 v | 3095 PF @ 25 V. | - - - | 38,5W (TC) | ||||||||||||||||||||||||||||||||||
![]() | FDMS015N04B | 1.0000 | ![]() | 8411 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 40 v | 31,3a (TA), 100A (TC) | 10V | 1,5 MOHM @ 50a, 10V | 4v @ 250 ähm | 118 NC @ 10 V | ± 20 V | 8725 PF @ 20 V | - - - | 2,5 W (TA), 104W (TC) | ||||||||||||||||||||||||||||||||||
![]() | HUF76609D3_NL | - - - | ![]() | 7166 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 238 | N-Kanal | 100 v | 10a (TC) | 4,5 V, 10 V. | 160 Mohm @ 10a, 10V | 3v @ 250 ähm | 16 NC @ 10 V | ± 16 v | 425 PF @ 25 V. | - - - | 49W (TC) | |||||||||||||||||||||||||||||||
![]() | BC239BBU | - - - | ![]() | 9151 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 25 v | 100 ma | 15na | Npn | 600mv @ 5ma, 100 mA | 180 @ 2MA, 5V | 250 MHz | |||||||||||||||||||||||||||||||||||||
![]() | PN2222Arp | - - - | ![]() | 7038 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | K. Loch | To-226-3, bis 92-3 (to-226aa) | PN2222 | 625 MW | To-92-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 1 | 40 v | 1 a | 10na | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | ||||||||||||||||||||||||||||||||||
![]() | SGS23N60UFDtu | 1.0000 | ![]() | 8772 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | SGS23N60 | Standard | 73 w | To-220f | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | 300 V, 12a, 23 Ohm, 15 V | 60 ns | - - - | 600 V | 23 a | 92 a | 2,6 V @ 15V, 12a | 115 µJ (EIN), 135 µJ (AUS) | 49 NC | 17ns/60ns | ||||||||||||||||||||||||||||||
![]() | FDMC6296 | 0,6000 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 11,5a (ta) | 4,5 V, 10 V. | 10,5 MOHM @ 11,5A, 10 V | 3v @ 250 ähm | 19 NC @ 5 V. | ± 20 V | 2141 PF @ 15 V | - - - | 900 MW (TA), 2,1W (TC) | |||||||||||||||||||||||||||||||||
![]() | Fqu4p25TU | 0,3400 | ![]() | 4481 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 23 | P-Kanal | 250 V | 3.1a (TC) | 10V | 2,1OHM @ 1,55A, 10V | 5 V @ 250 ähm | 14 NC @ 10 V | ± 30 v | 420 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | |||||||||||||||||||||||||||||||||
![]() | IRFW620BTM | 0,4000 | ![]() | 933 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 200 v | 5a (TC) | 10V | 800 MOHM @ 2,5A, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 30 v | 390 PF @ 25 V. | - - - | 3.13W (TA), 47W (TC) | |||||||||||||||||||||||||||||||
![]() | FCD600N60Z | - - - | ![]() | 6401 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FCD600N60Z | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 7.4a (TC) | 10V | 600mohm @ 3.7a, 10V | 3,5 V @ 250 ähm | 26 NC @ 10 V | ± 20 V | 1120 PF @ 25 V. | - - - | 89W (TC) | |||||||||||||||||||||||||||||||
![]() | FDMC8200 | - - - | ![]() | 7271 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 2156-FDMC8200-600039 | Ear99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFS740B | - - - | ![]() | 8436 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Fdb12n50ftm | 0,9500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Fdb12n | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBD6050 | 0,0300 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Standard | SOT-23-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 70 V | 1,1 V @ 100 mA | 4 ns | 100 na @ 50 V | -55 ° C ~ 150 ° C. | 200 ma | 2.5PF @ 0V, 1 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FDB2570 | 1.4400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 150 v | 22a (ta) | 6 V, 10V | 80MOHM @ 11A, 10V | 4v @ 250 ähm | 56 NC @ 10 V | ± 20 V | 1911 PF @ 75 V. | - - - | 93W (TC) | |||||||||||||||||||||||||||||||||
![]() | FCPF380N60 | 1.4800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8541.29.0095 | 204 | N-Kanal | 600 V | 10.2a (TC) | 10V | 380Mohm @ 5a, 10V | 3,5 V @ 250 ähm | 40 nc @ 10 v | ± 20 V | 1665 PF @ 25 V. | - - - | 31W (TC) | ||||||||||||||||||||||||||||||||||
![]() | 1N5249BTR | 0,0200 | ![]() | 138 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 100 na @ 14 v | 19 v | 23 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | BCX70K | - - - | ![]() | 9201 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 225 MW | SOT-23-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-BCX70K-600039 | 1 | 45 V | 200 ma | 20na | Npn | 550 MV @ 1,25 mA, 50 mA | 380 @ 2MA, 5V | 125 MHz | |||||||||||||||||||||||||||||||||||||
![]() | 1N4754a | 0,0300 | ![]() | 102 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 20 ° C. | K. Loch | Axial | 1 w | Axial | Herunterladen | Ear99 | 8541.10.0050 | 9.779 | 5 µA @ 29.7 V. | 39 v | 60 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | BZX79C39 | 0,0200 | ![]() | 31 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 15.000 | 1,5 V @ 100 mA | 50 na @ 27.3 v | 39 v | 130 Ohm |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus