Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - vorwärts (vf) (max) @ if | Strom - reverse -lockage @ vr | Strom - Dassche Anitt Buhben (IO) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mm5z3v6 | 1.0000 | ![]() | 2573 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-mm5z3v6-600039 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BAV103-G | 0,0400 | ![]() | 260 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0070 | 2.500 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BD240BTU | 1.0000 | ![]() | 9892 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 30 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 80 v | 2 a | 300 µA | PNP | 700mv @ 200 Ma, 1a | 15 @ 1a, 4V | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | BZX79C16 | 0,0200 | ![]() | 94 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 50 NA @ 11.2 V. | 16 v | 40 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBT2907A-D87Z | - - - | ![]() | 8654 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Nicht Anwendbar | Ear99 | 8541.21.0075 | 10.000 | 60 v | 800 mA | 20na (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | 1N964B | 2.0200 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 149 | 5 µa @ 9,9 V | 13 v | 13 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX79C36-T50A | 0,0200 | ![]() | 55 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 50 NA @ 25.2 V. | 36 v | 90 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBZ5242B | - - - | ![]() | 6634 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBZ52 | 300 MW | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 1 µa @ 9,1 V | 12 v | 30 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Fdn358p | - - - | ![]() | 6844 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FDN358 | MOSFET (Metalloxid) | Supersot-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 30 v | 1,5a (ta) | 4,5 V, 10 V. | 125mohm @ 1,5a, 10 V | 3v @ 250 ähm | 5.6 NC @ 10 V | ± 20 V | 182 PF @ 15 V | - - - | 500 MW (TA) | |||||||||||||||||||||||||||||||||||||||
![]() | 2N4403ta | 0,0400 | ![]() | 9457 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 2N4403 | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 600 mA | 100na | PNP | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 2V | 200 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | Gbu8g | - - - | ![]() | 2664 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | 4-ESIP, GBU | Standard | GBU | Herunterladen | Ear99 | 8541.10.0080 | 146 | 1 V @ 8 a | 5 µa @ 400 V | 5.6 a | Einphase | 400 V | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FPAB30PH60 | 14.6200 | ![]() | 275 | 0.00000000 | Fairchild Semiconductor | SPM® | Rohr | Veraltet | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | IGBT | Herunterladen | ROHS3 -KONFORM | Ear99 | 8542.39.0001 | 10 | 2 Phase | 20 a | 600 V | 2500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Jftj105 | - - - | ![]() | 9816 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1 w | SOT-223-4 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | - - - | 25 v | 500 mA @ 15 V | 4,5 V @ 1 µA | 3 Ohm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | SGU15N40LTU | 0,8000 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | SGU15 | Standard | 45 w | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | - - - | Graben | 400 V | 130 a | 8v @ 4,5 V, 130a | - - - | - - - | |||||||||||||||||||||||||||||||||||||||||
![]() | FDMC8010A | 1.1100 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMC8010 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA75329S3ST | 0,4400 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 55 v | 49a (TC) | 10V | 24MOHM @ 49A, 10V | 4v @ 250 ähm | 75 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 128W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | FPF1C2P5MF07AM | 1.0000 | ![]() | 6901 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | F1 -modul | 231 w | Einphasenbrückenreichrichter | F1 | Herunterladen | 0000.00.0000 | 1 | Vollbrückke Wechselrichter | - - - | 620 v | 39 a | 1,6 V @ 15V, 30a | 25 µA | NEIN | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FLZ39VA | 0,0200 | ![]() | 45 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 30 v | 35,6 v | 72 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FJP13009 | 1.0000 | ![]() | 1903 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 100 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.200 | 400 V | 12 a | - - - | Npn | 3v @ 3a, 12a | 8 @ 5a, 5V | 4MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | MMBT5401 | - - - | ![]() | 5571 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT23-3 (to-236) | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-MMBT5401-600039 | 1 | 150 v | 600 mA | 50na (ICBO) | PNP | 500mv @ 5ma, 50 mA | 60 @ 10ma, 5V | 300 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA76413D3S | 0,2700 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 49mohm @ 20a, 10V | 3v @ 250 ähm | 20 nc @ 10 v | ± 16 v | 645 PF @ 25 V. | - - - | 60 W (TC) | |||||||||||||||||||||||||||||||||||||||
MMSZ5229B | - - - | ![]() | 7071 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | SOD-123 | MMSZ52 | 500 MW | SOD-123 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 5 µa @ 1 V | 4.3 v | 23 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | FDS6689s | 1.0100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 16a (ta) | 4,5 V, 10 V. | 5.4mohm @ 16a, 10V | 3V @ 1ma | 78 NC @ 10 V | ± 20 V | 3290 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||||||||||||||||
![]() | FDS4410a | 1.0000 | ![]() | 2286 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS44 | MOSFET (Metalloxid) | 8-soic | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 10a (ta) | 13,5 MOHM @ 10a, 10V | 3v @ 250 ähm | 16 NC @ 5 V | 1205 PF @ 15 V | - - - | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FDMA0104 | 0,3100 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | FDMA01 | MOSFET (Metalloxid) | 6-microfet (2x2) | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | N-Kanal | 20 v | 9,4a (TA) | 14,5 MOHM @ 9,4a, 4,5 V. | 1V @ 250 ähm | 17,5 NC @ 4,5 V. | 1680 PF @ 10 V. | - - - | 1,9W (TA) | ||||||||||||||||||||||||||||||||||||||
![]() | 1N4734a | 0,0300 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Ear99 | 8541.10.0050 | 9.779 | 10 µa @ 2 V | 5.6 v | 5 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | GBPC15005 | 2.4900 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC | Standard | GBPC | Herunterladen | Ear99 | 8541.10.0080 | 121 | 1,1 V @ 7,5 a | 5 µa @ 50 V | 15 a | Einphase | 50 v | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9N302AS3ST | 2.0700 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 2,3 MOHM @ 75A, 10V | 3v @ 250 ähm | 300 NC @ 10 V. | ± 20 V | 11000 PF @ 15 V | - - - | 345W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | FLZ24VC | 0,0200 | ![]() | 9869 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 9.784 | 1,2 V @ 200 Ma | 133 NA @ 19 V. | 23,8 v | 29 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFW820BTM | 0,2700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 500 V | 2,5a (TC) | 10V | 2,6OHM @ 1,25A, 10 V | 4v @ 250 ähm | 18 NC @ 10 V. | ± 30 v | 610 PF @ 25 V. | - - - | 3.13W (TA), 49W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus