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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FDS5680 | 1.0000 | ![]() | 7325 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS56 | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 8a (ta) | 6 V, 10V | 20mohm @ 8a, 10V | 4v @ 250 ähm | 42 NC @ 10 V. | ± 20 V | 1850 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||
![]() | IRFS720B | 0,1800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 400 V | 3.3a (TJ) | 10V | 1,75OHM @ 1,65A, 10V | 4v @ 250 ähm | 18 NC @ 10 V. | ± 30 v | 600 PF @ 25 V. | - - - | 33W (TC) | |||||||||||||||||||||||
![]() | 1N5245BTR | - - - | ![]() | 9370 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 100 na @ 11 v | 15 v | 16 Ohm | ||||||||||||||||||||||||||||||||
![]() | BZX84C30 | - - - | ![]() | 5468 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BZX84C30 | 300 MW | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 100 na @ 21 V | 30 v | 80 Ohm | ||||||||||||||||||||||||||||
![]() | FDA16N50-F109 | 1.5600 | ![]() | 270 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 270 | N-Kanal | 500 V | 16,5a (TC) | 10V | 380MOHM @ 8.3A, 10V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 1945 PF @ 25 V. | - - - | 205W (TC) | ||||||||||||||||||||||||||
![]() | KSC5019MTA | 0,0700 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | KSC5019 | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 10 v | 2 a | 100NA (ICBO) | Npn | 500mv @ 50 Ma, 2a | 140 @ 500 mA, 1V | 150 MHz | ||||||||||||||||||||||||||
![]() | Fqaf8n80 | 1.6700 | ![]() | 557 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 800 V | 5.9a (TC) | 10V | 1,2OHM @ 2,95A, 10V | 5 V @ 250 ähm | 57 NC @ 10 V | ± 30 v | 2350 PF @ 25 V. | - - - | 107W (TC) | |||||||||||||||||||||||||
![]() | BAV21-T50A | 244.9900 | ![]() | 85 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | - - - | 2156-BAV21-T50A | 2 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 250 V | 1,25 V @ 200 Ma | 50 ns | 100 Na @ 200 V. | 175 ° C. | 200 ma | 5PF @ 0V, 1MHz | |||||||||||||||||||||||||||||||
![]() | FDPF6N60ZUT | 0,6800 | ![]() | 450 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 450 | N-Kanal | 600 V | 4,5a (TC) | 10V | 2OHM @ 2,25A, 10 V | 5 V @ 250 ähm | 20 nc @ 10 v | ± 30 v | 865 PF @ 25 V. | - - - | 33.8W (TC) | ||||||||||||||||||||||||||
![]() | FQD1N60CTM | 0,2700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1,110 | N-Kanal | 600 V | 1a (TC) | 10V | 11,5 OHM @ 500 mA, 10V | 4v @ 250 ähm | 6.2 NC @ 10 V | ± 30 v | 170 PF @ 25 V. | - - - | 2,5 W (TA), 28 W (TC) | ||||||||||||||||||||||||||
![]() | FDPF13N50NZ | 1.0000 | ![]() | 4735 | 0.00000000 | Fairchild Semiconductor | UNIFET-II ™ | Schüttgut | Aktiv | - - - | K. Loch | To-220-3 Full Pack | FDPF1 | MOSFET (Metalloxid) | To-220f | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 12a | 540Mohm @ 6a, 10V | 5 V @ 250 ähm | 39 NC @ 10 V. | 1930 PF @ 25 V. | - - - | 42W (TC) | ||||||||||||||||||||||||
![]() | FDB3672 | 1.9100 | ![]() | 160 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 7.2a (TA), 44a (TC) | 6 V, 10V | 28mohm @ 44a, 10V | 4v @ 250 ähm | 31 NC @ 10 V | ± 20 V | 1710 PF @ 25 V | - - - | 120W (TC) | |||||||||||||||||||||||||
![]() | HUFA75343G3 | 1.0200 | ![]() | 821 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 150 | N-Kanal | 55 v | 75a (TC) | 10V | 9mohm @ 75a, 10V | 4v @ 250 ähm | 205 NC @ 20 V | ± 20 V | 3000 PF @ 25 V. | - - - | 270W (TC) | |||||||||||||||||||||||||
![]() | FDMC2610 | 1.0000 | ![]() | 1155 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 200 v | 2,2a (TA), 9,5a (TC) | 6 V, 10V | 200mohm @ 2.2a, 10 V. | 4v @ 250 ähm | 18 NC @ 10 V. | ± 20 V | 960 PF @ 100 V | - - - | 2.1W (TA), 42W (TC) | ||||||||||||||||||||||||||
![]() | FDMS8558SDC | - - - | ![]() | 2392 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 3.000 | N-Kanal | 25 v | 38a (TA), 90A (TC) | 1,5 MOHM @ 38A, 10V | 2,2 V @ 1ma | 81 NC @ 10 V | ± 12 V | 5118 PF @ 13 V | - - - | 3.3W (TA), 89W (TC) | ||||||||||||||||||||||||
![]() | BC548 | 0,0400 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||||
![]() | TIP115 | 1.0000 | ![]() | 4881 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | TIP115 | 2 w | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 60 v | 2 a | 2ma | PNP - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | - - - | ||||||||||||||||||||||||||
![]() | FDZ1827NZ | 0,1200 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-XFBGA, WLCSP | FDZ1827 | MOSFET (Metalloxid) | 2W (TA) | 6-WLCSP (1,3x2,3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 N-Kanal (dual) gemeinsame Abfluss | 20V | 10a (ta) | 13mohm @ 1a, 4,5 V. | 1,2 V @ 250 ähm | 24nc @ 10v | 2055PF @ 10V | - - - | |||||||||||||||||||||||||||
![]() | 1N753ATR | 0,0400 | ![]() | 79 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 5.000 | 1,5 V @ 200 Ma | 100 na @ 1 v | 6.2 v | 7 Ohm | |||||||||||||||||||||||||||||||
![]() | FQP24N08 | 1.0000 | ![]() | 7566 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 80 v | 24a (TC) | 10V | 60MOHM @ 12a, 10V | 4v @ 250 ähm | 25 NC @ 10 V | ± 25 V | 750 PF @ 25 V. | - - - | 75W (TC) | ||||||||||||||||||||||||||
![]() | FQI4N25TU | 0,1900 | ![]() | 8002 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.175 | N-Kanal | 250 V | 3.6a (TC) | 10V | 1,75OHM @ 1,8a, 10V | 5 V @ 250 ähm | 5.6 NC @ 10 V | ± 30 v | 200 PF @ 25 V. | - - - | 3.13W (TA), 52W (TC) | |||||||||||||||||||||||||
![]() | FDR8308p | 0,2900 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSOP (0,130 ", 3,30 mm Breit) | FDR83 | MOSFET (Metalloxid) | 800 MW | Supersot ™ -8 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 p-kanal (dual) | 20V | 3.2a | 50 MOHM @ 3,2A, 4,5 V. | 1,5 V @ 250 ähm | 19NC @ 4,5V | 1240pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||
![]() | BCX71G | 0,0200 | ![]() | 7800 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 369 | 45 V | 100 ma | 20na | PNP | 550 MV @ 1,25 mA, 50 mA | 120 @ 2MA, 5V | - - - | |||||||||||||||||||||||||||||
![]() | KST3904LGEMTF | 0,0600 | ![]() | 236 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 5,323 | 40 v | 200 ma | - - - | Npn | 300mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 300 MHz | |||||||||||||||||||||||||||||
![]() | HUF75344A3 | 1.3700 | ![]() | 616 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 208 NC @ 20 V | ± 20 V | 4855 PF @ 25 V. | - - - | 288,5W (TC) | |||||||||||||||||||||||||
![]() | S1g | 0,0500 | ![]() | 186 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | Standard | Do-214AC, SMA | Herunterladen | Ear99 | 8541.10.0080 | 6,217 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 400 V | 1,1 V @ 1 a | 1,5 µs | 5 µa @ 400 V | -50 ° C ~ 150 ° C. | 1a | - - - | ||||||||||||||||||||||||||||||
![]() | KSA928AYBU | - - - | ![]() | 7501 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 500 | 30 v | 2 a | 100NA (ICBO) | PNP | 2v @ 30 mA, 1,5a | 160 @ 500 mA, 2V | 120 MHz | |||||||||||||||||||||||||||||
![]() | PN2907ara | 0,0200 | ![]() | 1868 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | PN2907 | 625 MW | To-92 (to-226) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 4.000 | 60 v | 800 mA | 50na | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | ||||||||||||||||||||||||||
![]() | 1N966B | 2.0200 | ![]() | 65 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 149 | 5 µA @ 12,2 V. | 16 v | 17 Ohm | ||||||||||||||||||||||||||||||||
SI6963DQ | 0,2300 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | SI6963 | MOSFET (Metalloxid) | 600 MW (TA) | 8-tssop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 1 | 2 p-kanal (dual) | 20V | 3.8a (TA) | 43mohm @ 3,8a, 4,5 V. | 1,5 V @ 250 ähm | 16nc @ 4,5V | 1015PF @ 10V | - - - |
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