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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) |
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![]() | FQI9N25CTU | 1.1200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 250 V | 8.8a (TC) | 10V | 430mohm @ 4.4a, 10V | 4v @ 250 ähm | 35 NC @ 10 V | ± 30 v | 710 PF @ 25 V. | - - - | 3.13W (TA), 74W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | SS9014ABU-FS | 0,0200 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 450 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 45 V | 100 ma | 50na (ICBO) | Npn | 300 mV @ 5ma, 100 mA | 60 @ 1ma, 5V | 270 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | KSD471AYTA | - - - | ![]() | 2204 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | KSD471 | 800 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 897 | 30 v | 1 a | 100NA (ICBO) | Npn | 500mv @ 100 mA, 1a | 120 @ 100 mA, 1V | 130 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | FSB70250 | - - - | ![]() | 3632 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 7 | Schüttgut | Aktiv | Oberflächenhalterung | 27-Powerlqfn-Modul | Mosfet | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 3.3 a | 500 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PN2369 | - - - | ![]() | 8245 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 535 | 15 v | 200 ma | 400NA (ICBO) | Npn | 250 mV @ 1ma, 10 mA | 40 @ 10 Ma, 1V | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | Bas20 | 0,0200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Bas20 | Standard | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0070 | 3.000 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 150 v | 1,25 V @ 200 Ma | 50 ns | 100 NA @ 150 V | -55 ° C ~ 150 ° C. | 200 ma | 5PF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FDI33N25TU | 1.0000 | ![]() | 7880 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 250 V | 33a (TC) | 10V | 94mohm @ 16.5a, 10V | 5 V @ 250 ähm | 48 nc @ 10 v | ± 30 v | 2135 PF @ 25 V. | - - - | 235W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | KSH117TF | - - - | ![]() | 3635 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100 v | 2 a | 20 µA | PNP - Darlington | 3v @ 40 mA, 4a | 1000 @ 2a, 3v | 25 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | TIP48TU | 0,4100 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 300 V | 1 a | 1ma | Npn | 1v @ 200 Ma, 1a | 30 @ 300 mA, 10V | 10 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | FQAF28N15 | 0,8000 | ![]() | 473 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 150 v | 22a (TC) | 10V | 90 MOHM @ 11A, 10V | 4v @ 250 ähm | 52 NC @ 10 V | ± 25 V | 1600 PF @ 25 V. | - - - | 102W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | FDMS8692 | 0,5000 | ![]() | 65 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 12a (TA), 28a (TC) | 4,5 V, 10 V. | 9mohm @ 12a, 10V | 3v @ 250 ähm | 21 NC @ 10 V | ± 20 V | 1265 PF @ 15 V | - - - | 2,5 W (TA), 41W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | Fga15n120ftdtu | - - - | ![]() | 3612 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA15N120 | Standard | 220 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | - - - | 575 ns | TRABENFELD STOPP | 1200 V | 30 a | 45 a | 2v @ 15V, 15a | - - - | 100 nc | - - - | |||||||||||||||||||||||||||||||||||||
![]() | Fqpf9n50t | 0,9600 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 5.3a (TC) | 10V | 730MOHM @ 2,65A, 10V | 5 V @ 250 ähm | 36 NC @ 10 V | ± 30 v | 1450 PF @ 25 V. | - - - | 50W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | Fqpf2n90 | 1.2000 | ![]() | 52 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 900 V | 1.4a (TC) | 10V | 7.2OHM @ 700 mA, 10V | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 500 PF @ 25 V. | - - - | 35W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | FSB50450AT | 4.9700 | ![]() | 347 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 5 | Schüttgut | Aktiv | K. Loch | 23-Powerdip-Modul (0,748 ", 19,00 mm) | Mosfet | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 1,5 a | 500 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA75344G3 | 2.3600 | ![]() | 96 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 300 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 210 NC @ 20 V | ± 20 V | 3200 PF @ 25 V. | - - - | 285W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | 1N4728a | 0,0300 | ![]() | 67 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 20 ° C. | K. Loch | Axial | 1 w | Axial | Herunterladen | Ear99 | 8541.10.0050 | 9.779 | 100 µa @ 1 V | 3.3 v | 10 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | SBAS16DXV6T1G | 0,0900 | ![]() | 107 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 2156-SBAS16DXV6T1G-600039 | Ear99 | 8541.10.0070 | 3.410 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | RGP10G | 0,0700 | ![]() | 104 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204Al, Do-41, axial | Standard | Do-41 | Herunterladen | Verkäfer undefiniert | Verkäfer undefiniert | 2156-RGP10G-600039 | 4,991 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 400 V | 1,3 V @ 1 a | 150 ns | 5 µa @ 400 V | -65 ° C ~ 175 ° C. | 1a | 15PF @ 4V, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | 1S921tr | 0,0200 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | 1S92 | Standard | Do-35 | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 0000.00.0000 | 5.000 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1,2 V @ 200 Ma | 100 na @ 100 v | 200 ma | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | BZX79C4V7 | 0,0300 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1,5 V @ 100 mA | 3 µa @ 2 V | 4,7 v | 80 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Fjy4011r | 0,0200 | ![]() | 9581 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | Fjy401 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 200 MHz | 22 Kohms | |||||||||||||||||||||||||||||||||||||||||
![]() | FDV305n | - - - | ![]() | 6963 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 20 v | 900 mA (TA) | 2,5 V, 4,5 V. | 220MOHM @ 900 Ma, 4,5 V. | 1,5 V @ 250 ähm | 1,5 NC @ 4,5 V. | ± 12 V | 109 PF @ 10 V | - - - | 350 MW (TA) | |||||||||||||||||||||||||||||||||||||||
![]() | Mm3z33vc | 0,0300 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 8.663 | 1 V @ 10 mA | 45 na @ 23 v | 33 v | 75 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9V3036P3 | 1.4100 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Rohr | Veraltet | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | Logik | 150 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | 300 V, 1kohm, 5V | - - - | 360 V | 21 a | 1,6 V @ 4V, 6a | - - - | 17 NC | -/4,8 µs | ||||||||||||||||||||||||||||||||||||||||
![]() | Fjn3309rta | 0,0200 | ![]() | 156 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | Fjn330 | 300 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 40 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 250 MHz | 4.7 Kohms | |||||||||||||||||||||||||||||||||||||||||
![]() | IRF9510R4941 | - - - | ![]() | 6749 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 3a (TC) | 10V | 1,2OHM @ 1,5A, 10 V. | 4v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 180 PF @ 25 V. | - - - | 20W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | Fqu5n40TU | 0,5600 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | Ear99 | 8542.39.0001 | 535 | N-Kanal | 400 V | 3.4a (TC) | 10V | 1,6OHM @ 1,7a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 460 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | KST13MTF | 0,0300 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KST13 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 30 v | 300 ma | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | 2N6076 | 0,0200 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 25 v | 500 mA | 100na | PNP | 250 mV @ 1ma, 10 mA | 100 @ 10 Ma, 1V | - - - |
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