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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | 1n5985b | 2.0000 | ![]() | 53 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 100 µa @ 1 V | 2,4 v | 100 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | FDR8308p | 0,2900 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSOP (0,130 ", 3,30 mm Breit) | FDR83 | MOSFET (Metalloxid) | 800 MW | Supersot ™ -8 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 p-kanal (dual) | 20V | 3.2a | 50 MOHM @ 3,2A, 4,5 V. | 1,5 V @ 250 ähm | 19NC @ 4,5V | 1240pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||
![]() | FQD1N60CTM | 0,2700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1,110 | N-Kanal | 600 V | 1a (TC) | 10V | 11,5 OHM @ 500 mA, 10V | 4v @ 250 ähm | 6.2 NC @ 10 V | ± 30 v | 170 PF @ 25 V. | - - - | 2,5 W (TA), 28 W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | FDPC1002s | 0,3900 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C. | Oberflächenhalterung | 8-Powerwdfn | FDPC1 | MOSFET (Metalloxid) | 1,6W (TA), 2W (TA) | Powerclip-33 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 25 v | 13a (ta), 20a (TC), 27a (TA), 60A (TC) | 6mohm @ 13a, 10V, 1,8 Mohm @ 27a, 10V | 2,2 V @ 250 µA, 2,2 V @ 1ma | 19nc @ 10v, 64nc @ 10v | 1240PF @ 13V, 4335PF @ 13V | - - - | |||||||||||||||||||||||||||||||||||||
![]() | Fqpf10n20 | 0,4100 | ![]() | 3066 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 16 | N-Kanal | 200 v | 6.8a (TC) | 10V | 360Mohm @ 3.4a, 10V | 5 V @ 250 ähm | 18 NC @ 10 V. | ± 30 v | 670 PF @ 25 V. | - - - | 40W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FDZ204p | 0,2900 | ![]() | 157 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 9-WFBGA | MOSFET (Metalloxid) | 9-bga (2x2,1) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 4,5a (TA) | 2,5 V, 4,5 V. | 45mohm @ 4,5a, 4,5 V. | 1,5 V @ 250 ähm | 13 NC @ 4,5 V. | ± 12 V | 884 PF @ 10 V. | - - - | 1,8W (TA) | |||||||||||||||||||||||||||||||||||
![]() | FQP17N08L | 0,4300 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 80 v | 16,5a (TC) | 5v, 10V | 100MOHM @ 8.25A, 10V | 2v @ 250 ähm | 11,5 NC @ 5 V. | ± 20 V | 520 PF @ 25 V. | - - - | 65W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FDR844p | 0,7000 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSOP (0,130 ", 3,30 mm Breit) | MOSFET (Metalloxid) | Supersot ™ -8 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 10a (ta) | 1,8 V, 4,5 V. | 11mohm @ 10a, 4,5 V. | 1,5 V @ 250 ähm | 74 NC @ 4,5 V. | ± 8 v | 4951 PF @ 10 V. | - - - | 1,8W (TA) | |||||||||||||||||||||||||||||||||||
![]() | BC212 | 1.0000 | ![]() | 8349 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 50 v | 300 ma | 15NA (ICBO) | PNP | 600mv @ 5ma, 100 mA | 60 @ 2MA, 5V | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | FGS15N40LTF | 0,5100 | ![]() | 161 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | Standard | 2 w | 8-soic | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 3.000 | - - - | Graben | 400 V | 130 a | 8v @ 4V, 130a | - - - | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FQP3N80C | 0,7500 | ![]() | 53 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 401 | N-Kanal | 800 V | 3a (TC) | 10V | 4,8ohm @ 1,5a, 10 V. | 5 V @ 250 ähm | 16,5 NC @ 10 V. | ± 30 v | 705 PF @ 25 V. | - - - | 107W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | NDP603Al | 0,3200 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 45 | N-Kanal | 30 v | 25a (TC) | 4,5 V, 10 V. | 22mohm @ 25a, 10V | 3v @ 250 ähm | 40 nc @ 10 v | ± 20 V | 1100 PF @ 15 V | - - - | 50W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Flz13va | 0,0200 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 16.705 | 1,2 V @ 200 Ma | 133 na @ 10 v | 12,5 v | 11,4 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | HUFA75345P3 | 2.2600 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 75a (TC) | 10V | 7mohm @ 75a, 10V | 4v @ 250 ähm | 275 NC @ 20 V | ± 20 V | 4000 PF @ 25 V. | - - - | 325W (TC) | |||||||||||||||||||||||||||||||||||
![]() | KSA940H2TU | - - - | ![]() | 1692 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 1,5 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 150 v | 1,5 a | 10 µA (ICBO) | PNP | 1,5 V @ 50 Ma, 500 mA | 40 @ 500 mA, 10 V. | 4MHz | |||||||||||||||||||||||||||||||||||||||
![]() | 1N6007b | 2.0000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 100 na @ 15 V | 20 v | 48 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | HUF76105SK8T | 0,3300 | ![]() | 82 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 5.5a (TA) | 4,5 V, 10 V. | 50MOHM @ 5.5A, 10V | 3v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 325 PF @ 25 V. | - - - | 2,5 W (TA) | |||||||||||||||||||||||||||||||||
![]() | Ffb05u120stm | 0,3000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Standard | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 800 | SCHNELE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1200 V | 3,5 V @ 5 a | 100 ns | 5 µa @ 1200 V | -65 ° C ~ 150 ° C. | 5a | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | NDP708AE | 2.2600 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | Verkäfer undefiniert | 2156P708AE-600039 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQB8P10TM | - - - | ![]() | 5986 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 100 v | 8a (TC) | 10V | 530mohm @ 4a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 30 v | 470 PF @ 25 V. | - - - | 3,75W (TA), 65W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | Sfi9z24tu | 0,1900 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 9.7a (TC) | 10V | 280 MOHM @ 4,9a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 30 v | 600 PF @ 25 V. | - - - | 3,8 W (TA), 49W (TC) | |||||||||||||||||||||||||||||||||
![]() | MPSH17-D26Z | 0,0700 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 2.000 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMS3602s | 1.7100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS3602 | MOSFET (Metalloxid) | 1W | Power56 | Herunterladen | Ear99 | 8542.39.0001 | 192 | 2 n-kanal (dual) | 25 v | 15a, 26a | 5.6mohm @ 15a, 10V | 3v @ 250 ähm | 27nc @ 10v | 1680pf @ 13v | Logikpegel -tor | |||||||||||||||||||||||||||||||||||||
![]() | FFPF06U40DNTU | 1.0000 | ![]() | 8480 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 Full Pack | Standard | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 50 | SCHNELE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 400 V | 6a | 1,4 V @ 6 a | 50 ns | 20 µA @ 400 V | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||
![]() | FQD16N15TM | 0,5300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 150 v | 11,8a (TC) | 10V | 160MOHM @ 5.9a, 10V | 4v @ 250 ähm | 30 NC @ 10 V | ± 25 V | 910 PF @ 25 V. | - - - | 2,5 W (TA), 55 W (TC) | |||||||||||||||||||||||||||||||||||
![]() | RFP50N06_F102 | - - - | ![]() | 9875 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 50a (TC) | 10V | 22mohm @ 50a, 10V | 4v @ 250 ähm | 150 NC @ 20 V | ± 20 V | 2020 PF @ 25 V | - - - | 131W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | HUF75329P3 | - - - | ![]() | 9487 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 42a (TC) | 25mohm @ 42a, 10V | 4v @ 250 ähm | 75 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 94W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | HUFA75309P3 | 0,2500 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 19A (TC) | 10V | 70 MOHM @ 19A, 10V | 4v @ 250 ähm | 24 NC @ 20 V | ± 20 V | 350 PF @ 25 V. | - - - | 55W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Irfw530atm | 0,3000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 14a (TC) | 10V | 110Mohm @ 7a, 10V | 4v @ 250 ähm | 36 NC @ 10 V | ± 20 V | 790 PF @ 25 V. | - - - | 3,8 W (TA), 55 W (TC) | |||||||||||||||||||||||||||||||||
![]() | ISL9V3040S3ST | 1.2100 | ![]() | 1475 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Logik | 150 w | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 300 V, 1kohm, 5V | - - - | 430 v | 21 a | 1,6 V @ 4V, 6a | - - - | 17 NC | -/4,8 µs |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus