Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | HGT1S20N36G3VLS | 1.8700 | ![]() | 48 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Logik | 150 w | To-263ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | 300 V, 10a, 25 Ohm, 5 V | - - - | 415 v | 37.7 a | 1,9 V @ 5v, 20a | - - - | 28.7 NC | -/15 µs | |||||||||||||||||||||||||||||||||||||||||
![]() | FDS9431 | - - - | ![]() | 7646 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDS99 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 1 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BC848AMTF | 0,0500 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FQB7N65CTM | 1.4400 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 650 V | 7a (TC) | 10V | 1,4OHM @ 3,5a, 10 V. | 4v @ 250 ähm | 36 NC @ 10 V | ± 30 v | 1245 PF @ 25 V. | - - - | 173W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | MMSZ5226B-FS | 0,0200 | ![]() | 307 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | 150 ° C (TJ) | Oberflächenhalterung | SOD-123 | 500 MW | SOD-123 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 25 µa @ 1 V | 3.3 v | 28 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | KBL04 | 0,4000 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-sip, kbl | Standard | Kbl | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 200 | 1,1 V @ 4 a | 5 µa @ 400 V | 4 a | Einphase | 400 V | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1n5989b | 1.8400 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 15 µa @ 1 V | 3.6 V | 90 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSB50450S | 7.6400 | ![]() | 401 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 5 | Schüttgut | Aktiv | Oberflächenhalterung | 23-SMD-Modul, Möwenflügel | Mosfet | Herunterladen | Nicht Anwendbar | 3 (168 Stunden) | Reichweiite Betroffen | Ear99 | 8542.39.0001 | 43 | 3 Phase Wechselrichter | 1,5 a | 500 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NDB6030PL | 0,9000 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | NDB603 | MOSFET (Metalloxid) | D²pak (to-263ab) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 8.000 | P-Kanal | 30 v | 30a (TC) | 4,5 V, 10 V. | 25mohm @ 19a, 10V | 2v @ 250 ähm | 36 NC @ 5 V. | ± 16 v | 1570 PF @ 15 V | - - - | 75W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | MMBT2222AT | 1.0000 | ![]() | 5949 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | SC-89, SOT-490 | MMBT2222 | 250 MW | SOT-523F | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 600 mA | - - - | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 1V | 300 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | RB751S40 | - - - | ![]() | 1295 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-79, SOD-523F | RB751 | Schottky | SOD-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0070 | 8.000 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 40 v | 370 mv @ 1 mA | 500 na @ 10 v | -55 ° C ~ 125 ° C. | 30 ma | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mmbz5221b | 0,0200 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.10.0050 | 15.000 | 900 mv @ 10 mA | 100 µa @ 1 V | 2,4 v | 30 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSP06TA | 0,0500 | ![]() | 179 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-KSP06TA-600039 | 1 | 80 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 50 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX55C16 | 0,0600 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 Na @ 12 V. | 16 v | 40 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4937 | 0,0200 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204Al, Do-41, axial | 1N4937 | Standard | Axial | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.10.0080 | 5.000 | SCHNELE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,2 V @ 1 a | 300 ns | 5 µa @ 600 V | -65 ° C ~ 150 ° C. | 1a | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | FDD6680 | 1.4100 | ![]() | 199 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 12a (ta), 46a (TC) | 4,5 V, 10 V. | 10mohm @ 12a, 10V | 3v @ 250 ähm | 18 NC @ 5 V. | ± 20 V | 1230 PF @ 15 V | - - - | 3,3 W (TA), 56 W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | KSA642YTA | 0,0200 | ![]() | 97 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 400 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 25 v | 300 ma | 100NA (ICBO) | PNP | 600mv @ 30 mA, 300 mA | 120 @ 50 Ma, 1V | - - - | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N5210TFR | 0,0200 | ![]() | 7068 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | - - - | Nicht Anwendbar | Ear99 | 8541.21.0095 | 2.000 | 50 v | 100 ma | 50na (ICBO) | Npn | 700 mv @ 1ma, 10 mA | 200 @ 100 µA, 5V | 30 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FCPF650N80Z | - - - | ![]() | 9256 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | FCPF650 | MOSFET (Metalloxid) | To-220f | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 800 V | 8a (TC) | 10V | 650Mohm @ 4a, 10V | 4,5 v Bei 800 ähm | 35 NC @ 10 V | ± 20 V | 1565 PF @ 100 V | - - - | 30,5 W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | IRFW630BTM_FP001 | 0,4300 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 200 v | 9a (TC) | 10V | 400 MOHM @ 4,5A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 30 v | 720 PF @ 25 V. | - - - | 3.13W (TA), 72W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | BZX85C43 | 0,0200 | ![]() | 7526 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 7% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.450 | 1,2 V @ 200 Ma | 500 na @ 30 v | 43 v | 50 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FFPF10U20DNTU | 0,2500 | ![]() | 55 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 Full Pack | Standard | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.10.0080 | 1 | SCHNELE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 200 v | 10a | 1,2 V @ 10 a | 35 ns | 10 µA @ 200 V. | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||||||
![]() | TIP41B | - - - | ![]() | 1628 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 80 v | 6 a | 700 ähm | Npn | 1,5 V @ 600 Ma, 6a | 30 @ 300 mA, 4V | 3MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | FDS8896 | 1.0000 | ![]() | 8481 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 15a (ta) | 4,5 V, 10 V. | 6mohm @ 15a, 10V | 2,5 V @ 250 ähm | 67 NC @ 10 V | ± 20 V | 2525 PF @ 15 V | - - - | 2,5 W (TA) | ||||||||||||||||||||||||||||||||||||||||||
FD6M043N08 | 6.6400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Power-SPM ™ | Rohr | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | EPM15 | FD6M043 | MOSFET (Metalloxid) | - - - | EPM15 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 19 | 2 n-kanal (dual) | 75 V | 65a | 4,3 MOHM @ 40A, 10V | 4v @ 250 ähm | 148nc @ 10v | 6180pf @ 25v | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | FDPF5N50ft | 0,9100 | ![]() | 58 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 331 | N-Kanal | 500 V | 4,5a (TC) | 10V | 1,55 Ohm @ 2,25a, 10 V. | 5 V @ 250 ähm | 8 NC @ 10 V | ± 30 v | 700 PF @ 25 V. | - - - | 28W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | SSP1N50B | 0,3000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 520 v | 1,5a (TC) | 10V | 5.3OHM @ 750 mA, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 30 v | 340 PF @ 25 V. | - - - | 36W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | FDS4895C | 1.0000 | ![]() | 5000 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS48 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | N und p-kanal | 40V | 5,5a, 4,4a | 39mohm @ 5.5a, 10V | 5 V @ 250 ähm | 10nc @ 10v | 410pf @ 20V | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | MMBTA92 | - - - | ![]() | 3884 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 300 V | 500 mA | 250na (ICBO) | PNP | 500 mv @ 2MA, 20 mA | 40 @ 10 ma, 10V | 50 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | FGPF120N30TU | 4.2700 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Standard | 60 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | - - - | - - - | 300 V | 120 a | 180 a | 1,4 V @ 15V, 25a | - - - | 112 NC | - - - |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus