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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | KST14MTF | 0,0300 | ![]() | 287 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KST14 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 30 v | 300 ma | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 20000 @ 100ma, 5V | 125 MHz | |||||||||||||||||||||||||||||||
![]() | Fqpf4n80 | 0,8300 | ![]() | 4136 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 334 | N-Kanal | 800 V | 2.2a (TC) | 10V | 3,6OHM @ 1,1A, 10 V. | 5 V @ 250 ähm | 25 NC @ 10 V | ± 30 v | 880 PF @ 25 V. | - - - | 43W (TC) | ||||||||||||||||||||||||||||||
![]() | FJMA790 | 1.0000 | ![]() | 2286 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | FJMA79 | 1,56 w | 6-microfet (2x2) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 35 V | 2 a | 100NA (ICBO) | PNP | 450 MV @ 50 Ma, 2a | 100 @ 1,5a, 1,5 V. | - - - | |||||||||||||||||||||||||||||||
![]() | 1n5256b | 1.8600 | ![]() | 221 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 0,5% | - - - | K. Loch | Do-204AH, Do-35, axial | 1N5256 | 500 MW | - - - | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 162 | 900 MV @ 200 Ma | 100 na @ 23 v | 30 v | 49 Ohm | |||||||||||||||||||||||||||||||||
![]() | FCP600N60Z | 1.1600 | ![]() | 781 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 258 | N-Kanal | 600 V | 7.4a (TC) | 10V | 600mohm @ 3.7a, 10V | 3,5 V @ 250 ähm | 26 NC @ 10 V | ± 20 V | 1120 PF @ 25 V. | - - - | 89W (TC) | |||||||||||||||||||||||||||||||
![]() | FDPF5N50UTYDtu | 0,6300 | ![]() | 49 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDPF5N | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | |||||||||||||||||||||||||||||||||||||||||
![]() | FDMS6673BZ | 1.0000 | ![]() | 9931 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 30 v | 15,2a (TA), 28a (TC) | 4,5 V, 10 V. | 6,8 MOHM @ 15,2a, 10V | 3v @ 250 ähm | 130 nc @ 10 v | ± 25 V | 5915 PF @ 15 V | - - - | 2,5 W (TA), 73W (TC) | |||||||||||||||||||||||||||||||
![]() | MJD32CTF | - - - | ![]() | 6296 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 833 | 100 v | 3 a | 50 µA | PNP | 1,2 V @ 375 Ma, 3a | 25 @ 1a, 4V | 3MHz | ||||||||||||||||||||||||||||||||
![]() | KSA614Y | - - - | ![]() | 5342 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | KSA614 | 25 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 55 v | 3 a | 50 µA (ICBO) | PNP | 500mv @ 100 mA, 1a | 120 @ 500 mA, 5V | - - - | |||||||||||||||||||||||||||||||
![]() | NDH832p | 0,3700 | ![]() | 73 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSOP (0,130 ", 3,30 mm Breit) | MOSFET (Metalloxid) | Supersot ™ -8 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 4.2a (TA) | 2,7 V, 4,5 V. | 60MOHM @ 4,2a, 4,5 V. | 1V @ 250 ähm | 30 NC @ 4,5 V. | -8v | 1000 PF @ 10 V | - - - | 1,8W (TA) | ||||||||||||||||||||||||||||||
![]() | FDS9412 | 0,2700 | ![]() | 116 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 7.9a (ta) | 4,5 V, 10 V. | 22mohm @ 7.9a, 10V | 2v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 830 PF @ 15 V | - - - | 2,5 W (TA) | ||||||||||||||||||||||||||||||
![]() | FLZ16VC | 0,0200 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 15.000 | 1,2 V @ 200 Ma | 133 na @ 12 v | 16.1 v | 15,2 Ohm | ||||||||||||||||||||||||||||||||||||
![]() | FCH060N80-F155 | 1.0000 | ![]() | 3001 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247-3 | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 800 V | 56a (TC) | 10V | 60MOHM @ 29A, 10V | 4,5 V @ 5,8 mA | 350 NC @ 10 V | ± 20 V | 14685 PF @ 100 V | - - - | 500W (TC) | ||||||||||||||||||||||||||||||||
![]() | 1N967B | 2.8700 | ![]() | 47 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 105 | 5 µa @ 13,7 V | 18 v | 21 Ohm | |||||||||||||||||||||||||||||||||||||
![]() | 2N6520ta | 1.0000 | ![]() | 5741 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 2N6520 | 625 MW | To-92-3 | Herunterladen | 0000.00.0000 | 1 | 350 V | 500 mA | 50na (ICBO) | PNP | 1v @ 5 ma, 50 mA | 20 @ 50 Ma, 10 V | 200 MHz | |||||||||||||||||||||||||||||||||||
![]() | KSD261CGTA | 0,0300 | ![]() | 163 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 20 v | 500 mA | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 200 @ 100ma, 1V | - - - | ||||||||||||||||||||||||||||||||
FDW2507N | 0,5100 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | FDW25 | MOSFET (Metalloxid) | 1.1W | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 20V | 7.5a | 19mohm @ 7,5a, 4,5 V. | 1,5 V @ 250 ähm | 28nc @ 4,5V | 2152pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||||||
![]() | FDS6892A | 0,5600 | ![]() | 66 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS68 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8541.21.0095 | 1 | 2 n-kanal (dual) | 20V | 7.5a | 18mohm @ 7,5a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 1333pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||||||
![]() | Fmka140 | 0,3700 | ![]() | 62 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | Do-214AC, SMA | Schottky | Do-214AC (SMA) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 5.000 | SCHNELE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 40 v | 600 mv @ 1 a | 1 ma @ 40 v | -65 ° C ~ 125 ° C. | 1a | - - - | |||||||||||||||||||||||||||||||||||
![]() | MPSA10 | 0,0200 | ![]() | 7589 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.21.0095 | 1.660 | 40 v | 100 ma | 100NA (ICBO) | Npn | - - - | 40 @ 5 µA, 10 V. | 125 MHz | ||||||||||||||||||||||||||||||||||
![]() | KSE3055T | 1.0000 | ![]() | 8145 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 600 MW | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 200 | 60 v | 10 a | 700 ähm | Npn | 8v @ 3,3a, 10a | 20 @ 4a, 4V | 2MHz | ||||||||||||||||||||||||||||||||||
![]() | U1898 | 0,0600 | ![]() | 9606 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.841 | N-Kanal | 16PF @ 20V | 40 v | 15 mA @ 20 V | 2 V @ 1 na | 50 Ohm | |||||||||||||||||||||||||||||||||||
![]() | Fqu6n25tu | 0,5500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | N-Kanal | 250 V | 4.4a (TC) | 10V | 1OHM @ 2,2a, 10V | 5 V @ 250 ähm | 8,5 NC @ 10 V | ± 30 v | 300 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | ||||||||||||||||||||||||||||||
![]() | MM5Z18V | 0,0200 | ![]() | 74 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 6% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | SC-79, SOD-523F | 200 MW | SOD-523F | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-mm5Z18V-600039 | 1 | 50 NA @ 12,6 V. | 18 v | 45 Ohm | |||||||||||||||||||||||||||||||||||||
![]() | 1N759a | 1.9300 | ![]() | 91 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 156 | 1,5 V @ 200 Ma | 100 na @ 1 v | 12 v | 30 Ohm | ||||||||||||||||||||||||||||||||||||
![]() | SS33 | 0,2200 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AB, SMC | Schottky | SMC (Do-214AB) | Herunterladen | Ear99 | 8541.10.0080 | 1,350 | SCHNELE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 30 v | 500 mV @ 3 a | 500 µa @ 30 V | -55 ° C ~ 150 ° C. | 3a | - - - | ||||||||||||||||||||||||||||||||||||
![]() | Fjy3015r | 0,0200 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | FJY301 | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 33 @ 10ma, 5v | 250 MHz | 2.2 Kohms | 10 Kohms | |||||||||||||||||||||||||||||||||
![]() | FDS7064n | 1.2700 | ![]() | 65 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 16a (ta) | 4,5 v | 7,5 MOHM @ 16A, 4,5 V. | 2v @ 250 ähm | 48 NC @ 4,5 V. | ± 12 V | 3355 PF @ 15 V | - - - | 3W (TA) | ||||||||||||||||||||||||||||||
![]() | FCH125N60E | 1.0000 | ![]() | 7379 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 29a (TC) | 10V | 125mohm @ 14.5a, 10V | 3,5 V @ 250 ähm | 95 NC @ 10 V | ± 20 V | 2990 PF @ 380 V | - - - | 278W (TC) | |||||||||||||||||||||||||||||||
![]() | HUFA76409T3ST | 0,5200 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | HUFA76409 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 2.500 | - - - |
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