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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | BAS16-D87Z | 0,0600 | ![]() | 300 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Bas16 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-Bas16-D87Z-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FMM7G30US60I | 28.1700 | ![]() | 17 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | Modul | 104 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | - - - | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-FMM7G30US60i | Ear99 | 8541.29.0095 | 1 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 30 a | 2,7 V @ 15V, 30a | 250 µA | Ja | 2.1 NF @ 30 V | |||||||||||||||||||||||||||||||||
![]() | KSC5338DTU | - - - | ![]() | 8971 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 75 w | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 450 V | 5 a | 100 µA | Npn | 500mv @ 200 Ma, 1a | 6 @ 2a, 1V | 11 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | Fqpf7n10l | 0,2700 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 100 v | 5.5a (TC) | 5v, 10V | 350 MOHM @ 2,75A, 10V | 2v @ 250 ähm | 6 NC @ 5 V. | ± 20 V | 290 PF @ 25 V. | - - - | 23W (TC) | |||||||||||||||||||||||||||||||||
![]() | FQP4N25 | 0,2700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 250 V | 3.6a (TC) | 10V | 1,75OHM @ 1,8a, 10V | 5 V @ 250 ähm | 5.6 NC @ 10 V | ± 30 v | 200 PF @ 25 V. | - - - | 52W (TC) | |||||||||||||||||||||||||||||||||
![]() | RF1S70N06SM | 2.2500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | PSPICE® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 70a (TC) | 10V | 14mohm @ 70a, 10V | 4v @ 250 ähm | 215 NC @ 20 V | ± 20 V | 3000 PF @ 25 V. | - - - | 150W (TC) | |||||||||||||||||||||||||||||||
![]() | FCP130N60 | 2.8900 | ![]() | 127 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 127 | N-Kanal | 600 V | 28a (TC) | 10V | 130Mohm @ 14a, 10V | 3,5 V @ 250 ähm | 70 nc @ 10 v | ± 20 V | 3590 PF @ 380 V | - - - | 278W (TC) | ||||||||||||||||||||||||||||||||||
![]() | FJP3305H2TU | - - - | ![]() | 4328 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 75 w | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V | 4 a | 1 µA (ICBO) | Npn | 1v @ 1a, 4a | 26 @ 1a, 5V | 4MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FSBB20CH60SL | 17.8000 | ![]() | 600 | 0.00000000 | Fairchild Semiconductor | Motion-SPM® | Schüttgut | Aktiv | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | IGBT | FSBB20 | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | 3 Phase | 20 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||
![]() | BDX34B | - - - | ![]() | 5270 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 70 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 200 | 80 v | 10 a | 500 ähm | PNP - Darlington | 2,5 V @ 6ma, 3a | 750 @ 3a, 3v | - - - | |||||||||||||||||||||||||||||||||||||
![]() | KST2907A-MTF | 0,0200 | ![]() | 355 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | KST2907 | 350 MW | SOT-23-3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 60 v | 600 mA | 10NA (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | ||||||||||||||||||||||||||||||||||
![]() | 1N4935GP | 0,1700 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-204Al, Do-41, axial | Standard | DO-204AL (DO-41) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 25.000 | SCHNELE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 1,2 V @ 1 a | 150 ns | 5 µa @ 200 V. | -50 ° C ~ 150 ° C. | 1a | 12pf @ 4v, 1 MHz | |||||||||||||||||||||||||||||||||||||
![]() | EGP30f | 0,2600 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-201ad, axial | Standard | Do-201ad | Herunterladen | Ear99 | 8541.10.0080 | 1.156 | SCHNELE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 300 V | 1,25 V @ 3 a | 50 ns | 5 µA @ 300 V | -65 ° C ~ 150 ° C. | 3a | 75PF @ 4V, 1 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | Ksp14ta | 0,0500 | ![]() | 75 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 30 v | 500 mA | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 20000 @ 100ma, 5V | 125 MHz | |||||||||||||||||||||||||||||||||||||
![]() | HUF76407DK8TR4810 | - - - | ![]() | 7606 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | 0000.00.0000 | 388 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSBB15CH60C | 1.0000 | ![]() | 8353 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 3 | Schüttgut | Aktiv | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | IGBT | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 15 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||
![]() | FQB3P20TM | 0,4100 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | P-Kanal | 200 v | 2.8a (TC) | 10V | 2,7OHM @ 1,4a, 10V | 5 V @ 250 ähm | 8 NC @ 10 V | ± 30 v | 250 PF @ 25 V. | - - - | 3.13W (TA), 52W (TC) | |||||||||||||||||||||||||||||||||
![]() | FDP8442-F085 | 1.2700 | ![]() | 750 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FDP8442-F085-600039 | 1 | N-Kanal | 40 v | 23a (TA), 80A (TC) | 10V | 3.1MOHM @ 80A, 10V | 4v @ 250 ähm | 235 NC @ 10 V | ± 20 V | 12200 PF @ 25 V. | - - - | 254W (TC) | |||||||||||||||||||||||||||||||||
![]() | Fjv3114rmtf | 0,0300 | ![]() | 2898 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV311 | 200 MW | SOT-23-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 250 MHz | 4.7 Kohms | 47 Kohms | ||||||||||||||||||||||||||||||||||||
![]() | Fqu20n06TU | 0,4100 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5.040 | N-Kanal | 60 v | 16,8a (TC) | 10V | 63mohm @ 8.4a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 25 V | 590 PF @ 25 V. | - - - | 2,5 W (TA), 38W (TC) | |||||||||||||||||||||||||||||||||
![]() | 2N3904BU | 0,0400 | ![]() | 1854 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 200 ma | - - - | Npn | 300mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 300 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | KSC945YTA | 0,0400 | ![]() | 7851 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 7.397 | 50 v | 150 Ma | 100NA (ICBO) | Npn | 300mv @ 10 mA, 100 mA | 120 @ 1ma, 6v | 300 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FDS7096N3 | 0,9900 | ![]() | 183 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 14a (ta) | 4,5 V, 10 V. | 9mohm @ 14a, 10V | 3v @ 250 ähm | 22 NC @ 5 V | ± 20 V | 1587 PF @ 15 V | - - - | 3W (TA) | |||||||||||||||||||||||||||||||||
![]() | FDPF5N50NZ | 0,8500 | ![]() | 414 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Ear99 | 8542.39.0001 | 353 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUF76121D3ST | 0,4100 | ![]() | 76 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 20A (TC) | 4,5 V, 10 V. | 23mohm @ 20a, 10V | 3v @ 250 ähm | 30 NC @ 10 V | ± 20 V | 850 PF @ 25 V. | - - - | 75W (TC) | |||||||||||||||||||||||||||||||
![]() | FDMS3600AS | 1.0100 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS3600 | MOSFET (Metalloxid) | 2,2 W, 2,5W | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 N-Kanal (Dual) Asymmetrisch | 25 v | 15a, 30a | 5.6mohm @ 15a, 10V | 2,7 V @ 250 ähm | 27nc @ 10v | 1770pf @ 13v | Logikpegel -tor | |||||||||||||||||||||||||||||||||||
![]() | FDS6984As | 0,4200 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS69 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 30V | 5,5a, 8,5a | 31mohm @ 5,5a, 10V | 3v @ 250 ähm | 11nc @ 10v | 420PF @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||||||||||
FDB0300N1007L | - - - | ![]() | 2786 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-7, d²pak (6 Leads + Tab) | MOSFET (Metalloxid) | To-263-7 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 200a (TC) | 6 V, 10V | 3mohm @ 26a, 10V | 4v @ 250 ähm | 113 NC @ 10 V | ± 20 V | 8295 PF @ 50 V | - - - | 3,8 W (TA), 250 W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FDP16AN08A0 | 0,9100 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 357 | N-Kanal | 75 V | 9A (TA), 58a (TC) | 6 V, 10V | 16mohm @ 58a, 10V | 4v @ 250 ähm | 42 NC @ 10 V. | ± 20 V | 1857 PF @ 25 V. | - - - | 135W (TC) | ||||||||||||||||||||||||||||||||||
![]() | Fjv3105rmtf | 0,0300 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV310 | 200 MW | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 250 MHz | 4.7 Kohms | 10 Kohms |
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