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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | Feuchtigitesempfindlich (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - vorwärts (vf) (max) @ if | Strom - reverse -lockage @ vr | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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![]() | 1N4372a | 2.7500 | ![]() | 60 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 110 | 1,5 V @ 200 Ma | 50 µa @ 1 V | 3 v | 29 Ohm | |||||||||||||||||||||||||||
![]() | MPSL01 | - - - | ![]() | 3504 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 8.954 | 120 v | 200 ma | 1 µA (ICBO) | Npn | 300mv @ 5ma, 50 mA | 50 @ 10ma, 5v | 60 MHz | |||||||||||||||||||||||||
![]() | Fdb603al | 1.2200 | ![]() | 39 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 33a (TC) | 4,5 V, 10 V. | 22mohm @ 25a, 10V | 3v @ 250 ähm | 26 NC @ 10 V | ± 20 V | 670 PF @ 15 V | - - - | 50W (TC) | |||||||||||||||||||
![]() | FQA9N50 | - - - | ![]() | 4882 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 220 | N-Kanal | 500 V | 9,6a (TC) | 10V | 730mohm @ 4.8a, 10V | 5 V @ 250 ähm | 36 NC @ 10 V | ± 30 v | 1450 PF @ 25 V. | - - - | 160W (TC) | |||||||||||||||||||||
![]() | KSA1304Ytu | 0,2400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 20 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 150 v | 1,5 a | 10 µA (ICBO) | PNP | 1,5 V @ 50 Ma, 500 mA | 40 @ 500 mA, 10 V. | 4MHz | |||||||||||||||||||||||||
![]() | FQD5N20LTM | 0,3300 | ![]() | 4354 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 358 | N-Kanal | 200 v | 3.8a (TC) | 5v, 10V | 1,2OHM @ 1,9a, 10 V. | 2v @ 250 ähm | 6.2 NC @ 5 V. | ± 20 V | 325 PF @ 25 V. | - - - | 2,5 W (TA), 37W (TC) | ||||||||||||||||||||||
![]() | HUF76609D3 | 0,4000 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 100 v | 10a (TC) | 4,5 V, 10 V. | 160 Mohm @ 10a, 10V | 3v @ 250 ähm | 16 NC @ 10 V | ± 16 v | 425 PF @ 25 V. | - - - | 49W (TC) | |||||||||||||||||||||
![]() | 2N4124TFR | 0,0200 | ![]() | 2405 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 2156-2N4124TFR-FSTR | Ear99 | 8541.21.0075 | 2.000 | 25 v | 200 ma | 50na (ICBO) | Npn | 300mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 300 MHz | ||||||||||||||||||||||||
![]() | NDS9936 | 0,5400 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | NDS993 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 30V | 5a | 50mohm @ 5a, 10V | 3v @ 250 ähm | 35nc @ 10v | 525PF @ 15V | Logikpegel -tor | ||||||||||||||||||||||
![]() | FLZ3V3A | 0,0200 | ![]() | 75 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 14 µa @ 1 V | 3.3 v | 35 Ohm | |||||||||||||||||||||||||||
![]() | NDS336p | - - - | ![]() | 8885 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 1.2a (TA) | 2,7 V, 4,5 V. | 200mohm @ 1,3a, 4,5 V. | 1V @ 250 ähm | 8,5 NC @ 4,5 V | ± 8 v | 360 PF @ 10 V | - - - | 500 MW (TA) | |||||||||||||||||||||
![]() | SB29003TF | 0,1500 | ![]() | 124 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 2 w | SOT-223-4 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-SB29003TF | Ear99 | 8541.21.0095 | 1 | 400 V | 300 ma | 500NA | Npn | 750 mv @ 5ma, 50 mA | 50 @ 10 ma, 10V | - - - | |||||||||||||||||||||||
![]() | KSC1674OBU | 0,0200 | ![]() | 146 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | - - - | 20V | 20 ma | Npn | 70 @ 1ma, 6v | 600 MHz | 3db ~ 5 dB @ 100MHz | |||||||||||||||||||||||||
![]() | 1N968BTR | 0,0400 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 5.000 | 5 µA @ 15,2 V | 20 v | 25 Ohm | ||||||||||||||||||||||||||||
![]() | FDMD8900 | 0,9900 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 12-Powerwdfn | FDMD89 | MOSFET (Metalloxid) | 2.1W | 12-Power3.3x5 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 30V | 19a, 17a | 4mohm @ 19a, 10V | 2,5 V @ 250 ähm | 35nc @ 10v | 2605PF @ 15V | - - - | |||||||||||||||||||||||
![]() | BZX85C20 | 1.0000 | ![]() | 2810 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | K. Loch | Do-204Al, Do-41, axial | BZX85C20 | 1,3 w | DO-41G | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 500 NA @ 15 V. | 20 v | 24 Ohm | ||||||||||||||||||||||||
![]() | FDS6688S | 0,7200 | ![]() | 288 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 16a (ta) | 4,5 V, 10 V. | 6mohm @ 16a, 10V | 3V @ 1ma | 78 NC @ 10 V | ± 20 V | 3290 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||
![]() | KSB1151YS | 0,3600 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,3 w | To-126-3 | Herunterladen | 0000.00.0000 | 838 | 60 v | 5 a | 10 µA (ICBO) | PNP | 300mv @ 200 Ma, 2a | 100 @ 2a, 1V | - - - | |||||||||||||||||||||||||||
![]() | BC337 | 1.0000 | ![]() | 6122 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 210 MHz | |||||||||||||||||||||||||
![]() | FDMC6296 | 0,6000 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 11,5a (ta) | 4,5 V, 10 V. | 10,5 MOHM @ 11,5A, 10 V | 3v @ 250 ähm | 19 NC @ 5 V. | ± 20 V | 2141 PF @ 15 V | - - - | 900 MW (TA), 2,1W (TC) | |||||||||||||||||||||
![]() | FDMS3672 | - - - | ![]() | 7179 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-mlp (5x6), Power56 | Herunterladen | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDMS3672 | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 7.4a (TA), 22A (TC) | 6 V, 10V | 23mohm @ 7.4a, 10V | 4v @ 250 ähm | 44 NC @ 10 V. | ± 20 V | 2680 PF @ 50 V | - - - | 2,5 W (TA), 78 W (TC) | |||||||||||||||||||
![]() | KSC1507Ytu | 0,3600 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 15 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 50 | 300 V | 200 µA | 100 µA (ICBO) | Npn | 2v @ 5ma, 50 mA | 120 @ 10 mA, 10V | 80MHz | |||||||||||||||||||||||||
![]() | BC856AMTF | 0,0500 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC856 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 65 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||
![]() | BC550 | 0,0400 | ![]() | 17 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||
![]() | FDMS7608S | 0,5100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | FDMS7608 | MOSFET (Metalloxid) | 1W | Power56 | Herunterladen | Ear99 | 8542.39.0001 | 589 | 2 n-kanal (dual) | 30V | 12a, 15a | 10mohm @ 12a, 10V | 3v @ 250 ähm | 24nc @ 10v | 1510pf @ 15V | Logikpegel -tor | |||||||||||||||||||||||
![]() | SI3447DV | - - - | ![]() | 8313 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 5.5a (TA) | 1,8 V, 4,5 V. | 33mohm @ 5,5a, 4,5 V. | 1,5 V @ 250 ähm | 30 NC @ 4,5 V. | ± 8 v | 1926 PF @ 10 V. | - - - | 800 MW (TA) | |||||||||||||||||||
![]() | MJD32CTM | - - - | ![]() | 4788 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | To-252-3 (dpak) | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 2.500 | 100 v | 3 a | 50 µA | PNP | 1,2 V @ 375 Ma, 3a | 10 @ 3a, 4V | 3MHz | |||||||||||||||||||||||||
![]() | MMBZ5246BNL | 0,7700 | ![]() | 594 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 250 MW | SOT-23-3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 100 Na @ 12 V. | 16 v | 17 Ohm | |||||||||||||||||||||||||
![]() | FDI038AN06A0_NL | 3.8100 | ![]() | 169 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 17A (TA), 80A (TC) | 6 V, 10V | 3,8 MOHM @ 80A, 10V | 4v @ 250 ähm | 124 NC @ 10 V | ± 20 V | 6400 PF @ 25 V. | - - - | 310W (TC) | |||||||||||||||||||
![]() | 1N4744atr | 0,0300 | ![]() | 1621 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Ear99 | 8541.10.0050 | 6.867 | 5 µa @ 11,4 V | 15 v | 14 Ohm |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus