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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | Es1b | 1.0000 | ![]() | 8391 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | Standard | Do-214AC, SMA | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 100 v | 920 mv @ 1 a | 15 ns | 5 µa @ 100 V. | -50 ° C ~ 150 ° C. | 1a | - - - | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSBM15SM60A | 19.8200 | ![]() | 126 | 0.00000000 | Fairchild Semiconductor | SPM® | Schüttgut | Aktiv | K. Loch | 32-Powerdip-Modul (1,370 ", 34,80 mm) | IGBT | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 48 | 3 Phase | 15 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSB70325 | 5.0900 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 7 | Schüttgut | Aktiv | Oberflächenhalterung | 27-Powerlqfn-Modul | Mosfet | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 4.1 a | 250 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDW258p | 1.3600 | ![]() | 92 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | MOSFET (Metalloxid) | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | P-Kanal | 12 v | 9a (ta) | 1,8 V, 4,5 V. | 11MOHM @ 9A, 4,5 V. | 1,5 V @ 250 ähm | 73 NC @ 4,5 V. | ± 8 v | 5049 PF @ 5 V. | - - - | 1,3W (TA) | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Hgtd7N60C3S9A | 1.2200 | ![]() | 249 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Standard | 60 w | To-252, (d-pak) | Herunterladen | Ear99 | 8541.29.0095 | 249 | - - - | - - - | 600 V | 14 a | 56 a | 2v @ 15V, 7a | 165 µJ (EIN), 600 µJ (AUS) | 23 NC | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FFAF20U20DNTU | 0,8300 | ![]() | 720 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | TO-3P-3 Full Pack | Standard | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 30 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 200 v | 20a | 1,2 V @ 20 a | 40 ns | 20 µA @ 200 V. | -65 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FMG1G50US60H | 34.0000 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr-Ga | 250 w | Standard | 19 Uhr-Ga | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 15 | Einzel | - - - | 600 V | 50 a | 2,8 V @ 15V, 50a | 250 µA | NEIN | 3.46 NF @ 30 V | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSD1417TU | - - - | ![]() | 3788 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | - - - | K. Loch | To-220-3 Full Pack | 2 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 60 v | 7 a | 100 µA (ICBO) | NPN - Darlington | 2v @ 14ma, 7a | 2000 @ 3a, 3v | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FMG2G50US60 | 31.7500 | ![]() | 148 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr-Ga | 250 w | Standard | 19 Uhr-Ga | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 15 | Halbbrücke | - - - | 600 V | 50 a | 2,8 V @ 15V, 50a | 250 µA | NEIN | 3.46 NF @ 30 V | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | HGT1S14N36G3VLT_NL | - - - | ![]() | 5266 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Logik | 100 w | I2pak (to-262) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 124 | 300 V, 7a, 28ohm, 5 V. | - - - | 390 v | 18 a | 2,2 V @ 5v, 14a | - - - | 24 NC | -/7µs | ||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9V3036S3STSB82029A | 1.0000 | ![]() | 1646 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Logik | 150 w | D2pak (to-263) | Herunterladen | 0000.00.0000 | 50 | - - - | - - - | 360 V | 21 a | 1,6 V @ 4V, 6a | - - - | 17 NC | -/4,8 µs | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MBR2535CT | 1.0000 | ![]() | 7967 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 | MBR2535 | Schottky | To-220-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 35 V | 25a | 820 mv @ 25 a | 200 µA @ 35 V | -65 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Rurd660 | - - - | ![]() | 4302 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-251-2, ipak | Standard | To-251-2 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 1.800 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,5 V @ 6 a | 60 ns | 100 µA @ 600 V | -65 ° C ~ 175 ° C. | 6a | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Fgb7n60undf | 1.1100 | ![]() | 994 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Standard | 83 w | D2pak (to-263) | Herunterladen | Ear99 | 8541.29.0095 | 1 | 400 V, 7a, 10ohm, 15 V. | 32.3 ns | Npt | 600 V | 14 a | 21 a | 2,3 V @ 15V, 7a | 99 µJ (EIN), 104 µJ (AUS) | 18 NC | 5.9ns/32.3ns | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FGA5065ADF | 2.5200 | ![]() | 325 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 268 w | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V, 50A, 6OHM, 15 V. | 31.8 ns | TRABENFELD STOPP | 650 V | 100 a | 150 a | 2,2 V @ 15V, 50A | 1,35MJ (EIN), 309 µJ (AUS) | 72.2 NC | 20,8ns/62,4ns | |||||||||||||||||||||||||||||||||||||||||||||
![]() | KSA643CYTA | 0,0400 | ![]() | 6054 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.850 | 20 v | 500 mA | 200na (ICBO) | PNP | 400 mv @ 50 mA, 500 mA | 120 @ 100 mA, 1V | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FGA180N30DTU | 4.0400 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA180 | Standard | 480 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | - - - | 21 ns | - - - | 300 V | 180 a | 450 a | 1,4 V @ 15V, 40a | - - - | 185 NC | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | HGT1S14N36G3VLT | 1.5400 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Logik | 100 w | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | 300 V, 7a, 25 Ohm, 5 V | - - - | 390 v | 18 a | 2,2 V @ 5v, 14a | - - - | 24 NC | -/7µs | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Fga40n60ufdtu | 2.1700 | ![]() | 142 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 160 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 142 | 300 V, 20a, 10ohm, 15 V. | 95 ns | - - - | 600 V | 40 a | 160 a | 3v @ 15V, 20a | 470 µJ (EIN), 130 µJ (AUS) | 77 NC | 15ns/65ns | ||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9V2040p3 | 1.0000 | ![]() | 8532 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Rohr | Veraltet | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | Logik | 130 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | 300 V, 1kohm, 5V | - - - | 430 v | 10 a | 1,9 V @ 4V, 6a | - - - | 12 NC | -/3,64 µs | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FGH40N60SFTU | 2.4800 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Ear99 | 8542.39.0001 | 122 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBZ5256B | - - - | ![]() | 9886 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 225 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 100 na @ 23 v | 30 v | 49 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
MMSZ5234B | 0,0200 | ![]() | 426 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | SOD-123 | MMSZ5234 | 500 MW | SOD-123 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 5 µa @ 4 V | 6.2 v | 7 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDP8870-F085 | 1.1200 | ![]() | 291 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0095 | 291 | N-Kanal | 30 v | 19A (TA), 156a (TC) | 4,5 V, 10 V. | 4.1MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 132 NC @ 10 V | ± 20 V | 5200 PF @ 15 V | - - - | 160W (TC) | ||||||||||||||||||||||||||||||||||||||||||||
![]() | HUF76432p3 | - - - | ![]() | 5532 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 566 | N-Kanal | 60 v | 59a (TC) | 4,5 V, 10 V. | 17mohm @ 59a, 10V | 3v @ 250 ähm | 53 NC @ 10 V | ± 16 v | 1765 PF @ 25 V. | - - - | 130W (TC) | ||||||||||||||||||||||||||||||||||||||||||||
![]() | GBU8K | - - - | ![]() | 1472 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | 4-ESIP, GBU | Standard | GBU | Herunterladen | Ear99 | 8541.10.0080 | 1 | 1 V @ 8 a | 5 µa @ 800 V | 5.6 a | Einphase | 800 V | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SSF7N60B | - - - | ![]() | 6587 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 5.4a (TC) | 10V | 1,2OHM @ 2,7a, 10V | 4v @ 250 ähm | 50 nc @ 10 v | ± 30 v | 1800 PF @ 25 V. | - - - | 86W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9R860S3ST_NL | 0,7000 | ![]() | 583 | 0.00000000 | Fairchild Semiconductor | Stealth ™ | Schüttgut | Aktiv | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Standard | To-263ab (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 2,4 V @ 8 a | 30 ns | 100 µA @ 600 V | -55 ° C ~ 175 ° C. | 8a | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Bas21ht1g | - - - | ![]() | 4608 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Bas21 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 2156-Bas21HT1G-600039 | Ear99 | 8541.10.0070 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1n5988b | 2.7500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 110 | 1,2 V @ 200 Ma | 25 µa @ 1 V | 3.3 v | 95 Ohm |
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