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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FQAF9N50 | 1.0100 | ![]() | 673 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 500 V | 7.2a (TC) | 10V | 730mohm @ 3.6a, 10V | 5 V @ 250 ähm | 36 NC @ 10 V | ± 30 v | 1450 PF @ 25 V. | - - - | 90W (TC) | |||||||||||||||||||||||||||||||||||||
![]() | MMSZ5228B | - - - | ![]() | 6434 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | SOD-123 | MMSZ52 | 500 MW | SOD-123 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 10 µa @ 1 V | 3,9 v | 24 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | FQA13N50CF | 1.0000 | ![]() | 8834 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 15a (TC) | 10V | 480MOHM @ 7,5a, 10V | 4v @ 250 ähm | 56 NC @ 10 V | ± 30 v | 2055 PF @ 25 V. | - - - | 218W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | FDS6064N3 | 1.6200 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 20 v | 23a (ta) | 1,8 V, 4,5 V. | 4mohm @ 23a, 4,5 V. | 1,5 V @ 250 ähm | 98 NC @ 4,5 V. | ± 8 v | 7191 PF @ 10 V | - - - | 3W (TA) | |||||||||||||||||||||||||||||||||||||
![]() | 1N4744A-T50A | - - - | ![]() | 6004 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | Do-41 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-1n4744a-T50A-600039 | 1 | 5 µa @ 11,4 V | 15 v | 14 Ohm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FDP5800 | 1.0000 | ![]() | 3857 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 60 v | 14A (TA), 80A (TC) | 4,5 V, 10 V. | 6mohm @ 80a, 10V | 2,5 V @ 250 ähm | 145 NC @ 10 V. | ± 20 V | 9160 PF @ 15 V | - - - | 242W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | HUF75639S3_NL | 1.1300 | ![]() | 655 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 56a (TC) | 10V | 25mohm @ 56a, 10V | 4v @ 250 ähm | 130 NC @ 20 V | ± 20 V | 2000 PF @ 25 V. | - - - | 200W (TC) | |||||||||||||||||||||||||||||||||||
![]() | Mm3z3v6c | 0,0300 | ![]() | 128 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1 V @ 10 mA | 4,5 µa @ 1 V | 3.6 V | 84 Ohm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N6015B | 1.8400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 100 na @ 33 v | 43 v | 150 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | BZX85C6V2-T50A | 0,0400 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 6,45% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | - - - | Verkäfer undefiniert | Reichweiite Betroffen | 2156-BZX85C6V2-T50A-600039 | 1 | 1,2 V @ 200 Ma | 1 µa @ 3 V | 6.2 v | 4 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | FQA16N50 | 4.1900 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 450 | N-Kanal | 500 V | 16a (TC) | 10V | 320mohm @ 8a, 10V | 5 V @ 250 ähm | 75 NC @ 10 V | ± 30 v | 3000 PF @ 25 V. | - - - | 200W (TC) | |||||||||||||||||||||||||||||||||||||
![]() | BCW31 | 0,0200 | ![]() | 6326 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 681 | 32 v | 500 mA | 100NA (ICBO) | Npn | 250 mV @ 500 µA, 10 mA | 110 @ 2MA, 5V | 200 MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | FLZ4V7A | 1.0000 | ![]() | 4660 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 190 na @ 1 v | 4.6 v | 21 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Rurd660s | 1.0000 | ![]() | 6699 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Lawine | To-252, (d-pak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,5 V @ 6 a | 60 ns | 100 µA @ 600 V | -65 ° C ~ 175 ° C. | 6a | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | HGTP14N44G3VL | 1.0000 | ![]() | 9388 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | Logik | 231 w | To-220ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | 300 V, 7,5a, 1kohm, 5 V. | - - - | 490 v | 27 a | 1,9 V @ 4,5 V, 8a | - - - | -/18 µs | ||||||||||||||||||||||||||||||||||||||
![]() | MM5Z18V-FS | 1.0000 | ![]() | 2653 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 6,39% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | SC-79, SOD-523 | 200 MW | SOD-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 8.000 | 50 NA @ 12,6 V. | 18 v | 45 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | EGF1B | 0,2500 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | Standard | Do-214AC (SMA) | Herunterladen | Ear99 | 8541.10.0080 | 1.205 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 100 v | 1 V @ 1 a | 50 ns | 10 µa @ 100 V. | -65 ° C ~ 175 ° C. | 1a | 15PF @ 4V, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4742ATR | 1.0000 | ![]() | 9155 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 5 µa @ 9,1 V | 12 v | 9 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX84C4V7 | - - - | ![]() | 5180 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BZX84C4 | 250 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 3 µa @ 2 V | 4,7 v | 80 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | USB10H | 1.0000 | ![]() | 1200 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | USB10 | MOSFET (Metalloxid) | 700 MW | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 p-kanal (dual) | 20V | 1.9a | 170 MOHM @ 1,9a, 4,5 V. | 1,5 V @ 250 ähm | 4.2nc @ 4.5V | 441pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||
![]() | Fam65v05df1 | 41.0100 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | Auto SPM® | Schüttgut | Aktiv | K. Loch | 27-Powerdip-Modul (0,300 ", 7,62 mm) | IGBT | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 50 a | 650 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | GF1M | - - - | ![]() | 2560 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | GF1 | Standard | SMA (Do-214AC) | Herunterladen | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 1000 v | 1,2 V @ 1 a | 2 µs | 5 µa @ 1 V | -65 ° C ~ 175 ° C. | 1a | 15PF @ 4V, 1 MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | 1n3070 | 6.2400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.10.0070 | 49 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 1 V @ 100 mA | 50 ns | 100 na @ 175 V | 175 ° C (max) | 500 mA | 5PF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | SS9015-DBU | 0,0200 | ![]() | 6618 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 450 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 9.900 | 45 V | 100 ma | 50na (ICBO) | PNP | 700 mv @ 5ma, 100 mA | 400 @ 1ma, 5v | 190 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | S310 | 0,3400 | ![]() | 378 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AB, SMC | Schottky | SMC (Do-214AB) | Herunterladen | Ear99 | 8541.10.0080 | 948 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 100 v | 850 mv @ 3 a | 500 µa @ 100 V. | -55 ° C ~ 150 ° C. | 3a | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | SS16 | - - - | ![]() | 8293 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | SS16 | Schottky | SMA (Do-214AC) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.10.0080 | 3,316 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 60 v | 700 mv @ 1 a | 200 µa @ 60 V | -65 ° C ~ 125 ° C. | 1a | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | FGAF40N60UFTU | 1.8800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Ear99 | 8542.39.0001 | 160 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S2B | - - - | ![]() | 1122 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214aa, SMB | Standard | SMB (Do-214AA) | Herunterladen | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 100 v | 1,15 V @ 2 a | 1,5 µs | 5 µa @ 100 V. | -50 ° C ~ 150 ° C. | 2a | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | Fdll914b | 0,0300 | ![]() | 120 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | Standard | SOD-80 | Herunterladen | Ear99 | 8542.39.0001 | 11.539 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 5 mA | 4 ns | 5 µa @ 75 V | 175 ° C (max) | 200 ma | 4PF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | FGH40T65SHD-F155 | 1.0000 | ![]() | 5048 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | FGH40 | Standard | 268 w | To-247 Lange Hinese | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 400 V, 40a, 6OHM, 15 V. | 31.8 ns | TRABENFELD STOPP | 650 V | 80 a | 120 a | 2,1 V @ 15V, 40a | 1,01MJ (EIN), 297 µJ (AUS) | 72.2 NC | 19,2ns/65,6ns |
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