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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | Strom - Spitzenausgang | FET -Typ | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Breakover | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Strom - Breakover |
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![]() | FSBB15CH60C | 1.0000 | ![]() | 8353 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 3 | Schüttgut | Aktiv | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | IGBT | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 15 a | 600 V | 2500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||
![]() | SB360 | 0,1700 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-201aa, Do-27, axial | Schottky | Do-201 | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 60 v | 680 mv @ 3 a | 500 µa @ 60 V | -50 ° C ~ 150 ° C. | 3a | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | FFPF06U150stu | 0,2300 | ![]() | 9529 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-2 Full Pack | Standard | To-220f-2l | - - - | ROHS3 -KONFORM | 2156-FFPF06U150stu-FS | Ear99 | 8541.10.0080 | 1.000 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1500 V | 1,8 V @ 6 a | 150 ns | 10 µa @ 1500 V | -65 ° C ~ 150 ° C. | 6a | - - - | |||||||||||||||||||||||||||||||||||||
![]() | HUF76407D3ST | - - - | ![]() | 2034 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 12a (TC) | 4,5 V, 10 V. | 92mohm @ 13a, 10V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FFPF06U20DPTU | 0,2000 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 Full Pack | Standard | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 50 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 200 v | 6a | 1,2 V @ 6 a | 35 ns | 6 µa @ 200 V. | -65 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||||||||
![]() | MM3Z20VC | 0,0300 | ![]() | 55 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1 V @ 10 mA | 45 na @ 14 v | 20 v | 51 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | MBR1545CT | 1.0000 | ![]() | 2464 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 | Schottky | To-220-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 45 V | 15a | 840 mv @ 15 a | 100 µA @ 45 V | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||
![]() | BZX84C3V9 | 0,0200 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | BZX84C3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-BZX84C3V9-600039 | Ear99 | 8541.10.0050 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | SFS9634 | 0,3900 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 250 V | 3.4a (TC) | 10V | 1,30 Ohm bei 1,7a, 10 V | 4v @ 250 ähm | 37 NC @ 10 V. | ± 30 v | 975 PF @ 25 V. | - - - | 33W (TC) | ||||||||||||||||||||||||||||||||
![]() | 1N5257B-FS | 2.0200 | ![]() | 185 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 162 | 1,2 V @ 200 Ma | 100 Na @ 25 V. | 33 v | 58 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | SS23 | 1.0000 | ![]() | 6808 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214aa, SMB | Schottky | Do-214AA (SMB) | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 30 v | 500 mV @ 2 a | 400 µa @ 30 V | -65 ° C ~ 125 ° C. | 2a | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | FQB12N60TM | 1.3900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | QFET ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 217 | N-Kanal | 600 V | 10.5a (TC) | 10V | 700MOHM @ 5.3A, 10V | 5 V @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1900 PF @ 25 V. | - - - | 3.13W (TA), 180 W (TC) | ||||||||||||||||||||||||||||||||
![]() | FDBL0120N40 | - - - | ![]() | 4932 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerfn | MOSFET (Metalloxid) | 8-hpsof | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 40 v | 240a (TC) | 10V | 1,2 MOHM @ 80A, 10V | 4v @ 250 ähm | 107 NC @ 10 V | ± 20 V | 7735 PF @ 25 V. | - - - | 300W (TJ) | |||||||||||||||||||||||||||||||||||
![]() | PN2222ATF | 0,0400 | ![]() | 2756 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 50 | 40 v | 1 a | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | 1N4446 | 0,0600 | ![]() | 106 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0070 | 179 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 20 mA | 4 ns | 25 Na @ 20 V | 175 ° C (max) | 200 ma | 4PF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FQA90N15 | - - - | ![]() | 2864 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 150 v | 90a (TC) | 10V | 18mohm @ 45a, 10V | 4v @ 250 ähm | 285 NC @ 10 V | ± 25 V | 8700 PF @ 25 V. | - - - | 375W (TC) | |||||||||||||||||||||||||||||||||||
![]() | RHRG1560CC-F085 | - - - | ![]() | 2886 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | K. Loch | To-247-3 | Standard | To-247-3 | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 600 V | 15a | 2,3 V @ 15 a | 55 ns | 100 µA @ 600 V | -55 ° C ~ 175 ° C. | |||||||||||||||||||||||||||||||||||||||
![]() | RB521S30T5G | - - - | ![]() | 3609 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-79, SOD-523 | Schottky | SOD-523 | Herunterladen | Ear99 | 8541.10.0070 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 30 v | 500 MV @ 200 Ma | 30 µa @ 10 V | -55 ° C ~ 125 ° C. | 200 ma | - - - | ||||||||||||||||||||||||||||||||||||||||
![]() | FFPF04H60STU | 0,4700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-2 Full Pack | Standard | To-220f-2l | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 1.000 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 2.1 V @ 4 a | 45 ns | 100 µA @ 600 V | -65 ° C ~ 150 ° C. | 4a | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | RF1K49092 | 0,5200 | ![]() | 9021 | 0.00000000 | Fairchild Semiconductor | Littlefet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | RF1K4 | MOSFET (Metalloxid) | 2W (TA) | 8-soic | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 3 | N und p-kanal | 12V | 3,5a (TA), 2,5a (TA) | 50 MOHM @ 3,5A, 5 V, 130 MOHM @ 2,5A, 5V | 2v @ 250 ähm | 25nc @ 10v, 24nc @ 10v | 750pf @ 10v, 775PF @ 10v | - - - | |||||||||||||||||||||||||||||||||
![]() | FLZ33VB | 0,0200 | ![]() | 68 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 25 v | 31.1 v | 55 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | MMBZ5231B_S00Z | 1.0000 | ![]() | 8874 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SFS9Z34 | 0,3700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 12a (TC) | 10V | 140Mohm @ 6a, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 30 v | 1155 PF @ 25 V. | - - - | 36W (TC) | ||||||||||||||||||||||||||||||||
![]() | FLZ4V3B | 0,0200 | ![]() | 48 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 470 na @ 1 v | 4.3 v | 32 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | 1N5222b | 0,0200 | ![]() | 94 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 15.000 | 1,2 V @ 200 Ma | 100 µa @ 1 V | 2,5 v | 30 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | SFW9510TM | 0,3400 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 3.6a (TC) | 10V | 1,2OHM @ 1,8a, 10V | 4v @ 250 ähm | 10 nc @ 10 v | ± 30 v | 335 PF @ 25 V. | - - - | 3,8 W (TA), 32W (TC) | ||||||||||||||||||||||||||||||||
![]() | 1N4737A-T50A | 0,0500 | ![]() | 42 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | Do-41 | - - - | 2156-1n4737a-T50A | 6,231 | 10 µa @ 5 V | 7,5 v | 4 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | HUF75229P3_NL | 0,7000 | ![]() | 1655 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 319 | N-Kanal | 50 v | 44a (TC) | 10V | 22mohm @ 44a, 10V | 4v @ 250 ähm | 75 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 90W (TC) | ||||||||||||||||||||||||||||||||
![]() | DB3 | 0,0400 | ![]() | 861 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 125 ° C (TJ) | Do-204AH, Do-35, axial | Do-35 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.30.0080 | 6.836 | 2 a | 28 ~ 36 V | 50 µA | ||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N6024B | - - - | ![]() | 5035 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 175 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | - - - | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0050 | 1 | 1,1 V @ 200 Ma | 100 na @ 76 v | 100 v | 500 Ohm |
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