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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | ZTX614 | - - - | ![]() | 3011 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 378 | 100 v | 800 mA | 100NA (ICBO) | NPN - Darlington | 1,25 V @ 8ma, 800 mA | 10000 @ 500 mA, 5V | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | FDBL0150N60 | 4.4900 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerfn | MOSFET (Metalloxid) | 8-hpsof | Herunterladen | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDBL0150N60 | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 240a (TC) | 10V | 1,5 MOHM @ 80A, 10V | 4v @ 250 ähm | 169 NC @ 10 V | ± 20 V | 10300 PF @ 30 V | - - - | 357W (TJ) | |||||||||||||||||||||||||||||||||
![]() | PN2222ATA | 1.0000 | ![]() | 6789 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | - - - | 0000.00.0000 | 1 | 40 v | 1 a | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | MM3Z75VC | 0,0400 | ![]() | 172 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 7.340 | 1 V @ 10 mA | 45 NA @ 52,5 V. | 75 V | 240 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | BC33740ta | 1.0000 | ![]() | 1559 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 250 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | Fjy3004r | 0,0300 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-89, SOT-490 | Fjy300 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 56 @ 5ma, 5V | 250 MHz | 47 Kohms | 47 Kohms | |||||||||||||||||||||||||||||||||||
![]() | Fga40n60ufdtu | 2.1700 | ![]() | 142 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 160 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 142 | 300 V, 20a, 10ohm, 15 V. | 95 ns | - - - | 600 V | 40 a | 160 a | 3v @ 15V, 20a | 470 µJ (EIN), 130 µJ (AUS) | 77 NC | 15ns/65ns | |||||||||||||||||||||||||||||||||||
![]() | Mm5z8v2 | 0,0200 | ![]() | 249 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-79, SOD-523 | MM5Z8 | 200 MW | SOD-523 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 8.000 | 700 NA @ 5 V. | 8.2 v | 15 Ohm | |||||||||||||||||||||||||||||||||||||||
![]() | KSD526Ytu | 1.0000 | ![]() | 7595 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 30 w | To-220-3 | Herunterladen | 0000.00.0000 | 1 | 80 v | 4 a | 30 µA (ICBO) | Npn | 1,5 V @ 300 Ma, 3a | 120 @ 500 mA, 5V | 8MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | 1md2 | 0,0200 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 0000.00.0000 | 10.000 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TIP110 | 1.0000 | ![]() | 9843 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 60 v | 2ma | NPN - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | 25 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | BZX79C30-T50A | 0,0200 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-BZX79C30-T50A | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 50 na @ 21 v | 30 v | 80 Ohm | |||||||||||||||||||||||||||||||||||||||
![]() | FCP11N65 | 1.4900 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FCP11 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDS2070N3 | 1.9800 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 150 v | 4.1a (ta) | 6 V, 10V | 78mohm @ 4.1a, 10V | 4v @ 250 ähm | 53 NC @ 10 V | ± 20 V | 1884 PF @ 75 V. | - - - | 3W (TA) | |||||||||||||||||||||||||||||||||||
![]() | HUF75639S3ST | 1.2800 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8541.29.0095 | 235 | N-Kanal | 100 v | 56a (TC) | 10V | 25mohm @ 56a, 10V | 4v @ 250 ähm | 130 NC @ 20 V | ± 20 V | 2000 PF @ 25 V. | - - - | 200W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | FJV4110RMTF | 0,0200 | ![]() | 54 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV411 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 200 MHz | 10 Kohms | ||||||||||||||||||||||||||||||||||||||
![]() | FQI50N06LTU | 1.3100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 52,4a (TC) | 5v, 10V | 21mohm @ 26.2a, 10V | 2,5 V @ 250 ähm | 32 NC @ 5 V. | ± 20 V | 1630 PF @ 25 V. | - - - | 3,75W (TA), 121W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FDC6302p | 0,2800 | ![]() | 151 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | FDC6302 | MOSFET (Metalloxid) | 700 MW | Supersot ™ -6 | Herunterladen | Ear99 | 8541.21.0095 | 1 | 2 p-kanal (dual) | 25 v | 120 Ma | 10OHM @ 200 Ma, 4,5 V. | 1,5 V @ 250 ähm | 0,31nc @ 4,5 V | 11pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||||||||||||
![]() | BZX84C22 | 0,0200 | ![]() | 60 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Bzx84 | 300 MW | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 100 Na @ 15,4 V. | 22 v | 70 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | FDB8444 | 1.1400 | ![]() | 167 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 264 | N-Kanal | 40 v | 70a (TC) | 10V | 5,5 MOHM @ 70A, 10V | 4v @ 250 ähm | 128 NC @ 10 V | ± 20 V | 8035 PF @ 25 V. | - - - | 167W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | Fcb20n60f | - - - | ![]() | 4081 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Fcb20n | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | SB350 | 0,1200 | ![]() | 1361 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-201aa, Do-27, axial | Schottky | Do-201 | Herunterladen | Ear99 | 8541.10.0080 | 1,954 | SCHNELE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 50 v | 680 mv @ 3 a | 500 µa @ 50 V | -50 ° C ~ 150 ° C. | 3a | - - - | |||||||||||||||||||||||||||||||||||||||||
![]() | FDBL0090N40 | 1.0000 | ![]() | 9399 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerfn | MOSFET (Metalloxid) | 8-hpsof | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 40 v | 240a (TC) | 10V | 0,9 MOHM @ 80A, 10V | 4v @ 250 ähm | 188 NC @ 10 V. | ± 20 V | 12000 PF @ 25 V. | - - - | 357W (TJ) | ||||||||||||||||||||||||||||||||||||
![]() | FDMC7672 | 0,4200 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 715 | N-Kanal | 30 v | 16,9a (TA), 20A (TC) | 4,5 V, 10 V. | 5.7mohm @ 16.9a, 10V | 3v @ 250 ähm | 57 NC @ 10 V | ± 20 V | 3890 PF @ 15 V | - - - | 2,3 W (TA), 33W (TC) | ||||||||||||||||||||||||||||||||||||
![]() | FGP3440G2 | - - - | ![]() | 8360 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | But11TU | 0,4000 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 100 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 400 V | 5 a | 1ma | Npn | 1,5 V @ 600 Ma, 3a | - - - | - - - | |||||||||||||||||||||||||||||||||||||
![]() | MMSZ5246ET1G | - - - | ![]() | 3310 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOD-123 | 500 MW | SOD-123 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-mmsz5246ET1G-600039 | 1 | 900 mv @ 10 mA | 100 Na @ 12 V. | 16 v | 17 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | MPSA06 | 0,0800 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MPSA06 | 625 MW | To-92 | Herunterladen | Ear99 | 8541.21.0075 | 3.842 | 80 v | 500 mA | 100NA (ICBO) | Npn | 250mv @ 10 mA, 100 mA | 100 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | BZX79C6V8-T50A | - - - | ![]() | 6600 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 2 µa @ 4 V. | 6,8 v | 15 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | SFU9034TU | 0,2600 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 14a (TC) | 10V | 140 MOHM @ 7A, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 25 V | 1155 PF @ 25 V. | - - - | 2,5 W (TA), 49W (TC) |
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Standardprodukteinheit
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Lagerhaus