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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FDS2570 | - - - | ![]() | 6447 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 2.500 | N-Kanal | 150 v | 4a (ta) | 6 V, 10V | 72mohm @ 4a, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 20 V | 1907 PF @ 75 V | - - - | 1W (TA) | ||||||||||||||||||||||||||||||||
![]() | S1J | 1.0000 | ![]() | 8096 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | Standard | Do-214AC, SMA | Herunterladen | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 600 V | 1,1 V @ 1 a | 1,5 µs | 5 µa @ 600 V | -50 ° C ~ 150 ° C. | 1a | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | MMBT3906K | 0,0200 | ![]() | 865 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 200 ma | - - - | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | HUF755545S3S | 1.0000 | ![]() | 8349 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 80 v | 75a (TC) | 10V | 10MOHM @ 75A, 10V | 4v @ 250 ähm | 235 NC @ 20 V | ± 20 V | 3750 PF @ 25 V. | - - - | 270W (TC) | ||||||||||||||||||||||||||||||||||
![]() | 1N914B | 0,0300 | ![]() | 140 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | Standard | Do-35 | Herunterladen | Ear99 | 8541.10.0070 | 11.539 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 200 Ma | 4 ns | 5 µa @ 75 V | -65 ° C ~ 175 ° C. | 200 ma | 4PF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||
![]() | 1N5235BTA | 0,0600 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | 200 ° C | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 5.000 | 1,1 V @ 200 Ma | 3 µa @ 4,8 V. | 6,8 v | 5 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | 2N4402TF | 0,0200 | ![]() | 9157 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 10.000 | 40 v | 600 mA | - - - | PNP | 750 MV @ 50 Ma, 500 mA | 50 @ 150 mA, 2V | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FDQ7238AS | 0,8300 | ![]() | 643 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 14-SOIC (0,154 ", 3,90 mm Breit) | FDQ72 | MOSFET (Metalloxid) | 1,3W, 1,1W | 14-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 30V | 14a, 11a | 13,2mohm @ 11a, 10V | 3v @ 250 ähm | 24nc @ 10v | 920PF @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||||||||||
![]() | KSH127TF-FS | 1.0000 | ![]() | 3250 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | Dpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100 v | 8 a | 10 µA | PNP - Darlington | 4v @ 80 Ma, 8a | 1000 @ 4a, 4V | - - - | ||||||||||||||||||||||||||||||||||||
![]() | FQA70N15 | - - - | ![]() | 3024 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 150 v | 70a (TC) | 10V | 28mohm @ 35a, 10V | 4v @ 250 ähm | 175 NC @ 10 V | ± 25 V | 5400 PF @ 25 V. | - - - | 330W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FLZ12VB | 0,0200 | ![]() | 1854 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 10.000 | 1,2 V @ 200 Ma | 133 na @ 9 v | 11.7 v | 9,5 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | MMSZ36VCF-FS | - - - | ![]() | 9277 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | 150 ° C (TJ) | Oberflächenhalterung | SOD-123F | 1 w | SOD-123F | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.10.0050 | 2.535 | 1,2 V @ 200 Ma | 1 µa @ 27 V | 36 v | 40 Ohm | ||||||||||||||||||||||||||||||||||||||
MMSZ5232B | 0,0200 | ![]() | 303 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | SOD-123 | MMSZ52 | 500 MW | SOD-123 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 900 mv @ 10 mA | 5 µa @ 3 V | 5.6 v | 17 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | Flz15va | 0,0200 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 11 v | 13,8 v | 13,3 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | Fypf1010dntu | 0,6300 | ![]() | 383 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 Full Pack | Schottky | To-220f-3 | Herunterladen | Ear99 | 8541.10.0080 | 477 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 100 v | 10a | 950 mv @ 10 a | 1 ma @ 100 v | -40 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||||||||||
2SA1707S-AN-FS | - - - | ![]() | 9949 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | SC-71 | 2SA1707 | 1 w | 3-nmp | Herunterladen | Nicht Anwendbar | 3 (168 Stunden) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | 50 v | 3 a | 1 µA (ICBO) | PNP | 700mv @ 100 mA, 2a | 140 @ 100 mA, 2V | 150 MHz | ||||||||||||||||||||||||||||||||||||
![]() | MMBZ5232B | 0,0200 | ![]() | 8809 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.10.0050 | 14.852 | 900 mv @ 10 mA | 5 µa @ 3 V | 5.6 v | 11 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | BC637 | 0,0500 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 60 v | 1 a | 100NA (ICBO) | Npn | 500 mv @ 50 mA, 500 mA | 40 @ 150 mA, 2V | 200 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | 1N4737ATR | 0,0300 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1N4737 | 1 w | Do-41 | Herunterladen | Ear99 | 8541.10.0050 | 1 | 10 µa @ 5 V | 7,5 v | 4 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | Fjv1845emtf | 0,0300 | ![]() | 151 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV184 | 300 MW | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 120 v | 50 ma | 50na (ICBO) | Npn | 300 mV @ 1ma, 10 mA | 400 @ 1ma, 6v | 110 MHz | |||||||||||||||||||||||||||||||||||
![]() | 1N6009b | 1.8400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 100 Na @ 18 V. | 24 v | 62 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | 1N5239BTR | 0,0200 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 3 µa @ 7 V. | 9.1 v | 10 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | FDSS2407 | 0,7200 | ![]() | 565 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDSS24 | MOSFET (Metalloxid) | 2.27W | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 62V | 3.3a | 110 Mohm @ 3,3a, 10 V | 3v @ 250 ähm | 4.3nc @ 5v | 300PF @ 15V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||
![]() | FQA24N50 | - - - | ![]() | 9456 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FQA2 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | N-Kanal | 500 V | 24a (TC) | 10V | 200mohm @ 12a, 10V | 5 V @ 250 ähm | 120 nc @ 10 v | ± 30 v | 4500 PF @ 25 V. | - - - | 290W (TC) | |||||||||||||||||||||||||||||||
![]() | FDFS2P103A | 0,4300 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | P-Kanal | 30 v | 5.3a (ta) | 4,5 V, 10 V. | 59mohm @ 5.3a, 10V | 3v @ 250 ähm | 8 NC @ 5 V | ± 25 V | 535 PF @ 15 V | Schottky Diode (Isolier) | 900 MW (TA) | ||||||||||||||||||||||||||||||||||
![]() | MBR1560CT | 1.0000 | ![]() | 5560 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 | Schottky | To-220-3 | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 60 v | 15a | 900 mv @ 15 a | 1 ma @ 60 v | -65 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||||||||||
![]() | FGPF70N30TTU | 1.2100 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Standard | 49,2 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | - - - | Graben | 300 V | 160 a | 1,5 V @ 15V, 20a | - - - | 125 NC | - - - | ||||||||||||||||||||||||||||||||||||
![]() | KSA1242OTU | 0,1800 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | 10 w | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 5.040 | 20 v | 5 a | 100 µA (ICBO) | PNP | 1v @ 100 mA, 4a | 100 @ 500 mA, 2V | 180 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | 1N5235BTR | 0,0200 | ![]() | 254 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 3 µa @ 5 V | 6,8 v | 5 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | FGPF7N60RUFDTU | 0,5100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Standard | 41 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 300 V, 7a, 30ohm, 15 V. | 65 ns | - - - | 600 V | 14 a | 21 a | 2,8 V @ 15V, 7a | 230 µJ (EIN), 100 µJ (AUS) | 24 NC | 60ns/60ns |
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