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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FDSS2407S_B82086 | 0,7000 | ![]() | 783 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDSS24 | MOSFET (Metalloxid) | 2.27W (TA) | 8-soic | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 62V | 3.3a (ta) | 110 Mohm @ 3,3a, 10 V | 3v @ 250 ähm | 4.3nc @ 5v | 300PF @ 15V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||
![]() | FJPF13009H1TU | 0,8900 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | 50 w | To-220F-3 (Y-Forming) | Herunterladen | Ear99 | 8542.39.0001 | 337 | 400 V | 12 a | - - - | Npn | 3v @ 3a, 12a | 6 @ 8a, 5V | 4MHz | ||||||||||||||||||||||||||||||||||||||||||||
![]() | PN2222ATA | 1.0000 | ![]() | 6789 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | - - - | 0000.00.0000 | 1 | 40 v | 1 a | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10V | 300 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | KSD526Ytu | 1.0000 | ![]() | 7595 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 30 w | To-220-3 | Herunterladen | 0000.00.0000 | 1 | 80 v | 4 a | 30 µA (ICBO) | Npn | 1,5 V @ 300 Ma, 3a | 120 @ 500 mA, 5V | 8MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Fjy3004r | 0,0300 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-89, SOT-490 | Fjy300 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 56 @ 5ma, 5V | 250 MHz | 47 Kohms | 47 Kohms | |||||||||||||||||||||||||||||||||||||||
![]() | Mm5z8v2 | 0,0200 | ![]() | 249 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-79, SOD-523 | MM5Z8 | 200 MW | SOD-523 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 8.000 | 700 NA @ 5 V. | 8.2 v | 15 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | NDS9952a | - - - | ![]() | 3220 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | NDS995 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N und p-kanal | 30V | 3,7a, 2,9a | 80Mohm @ 1a, 10V | 2,8 V @ 250 ähm | 25nc @ 10v | 320pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||||||||||||||||
![]() | RFD4N06LSM9A | 0,5600 | ![]() | 67 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 4a (TC) | 5v | 600MOHM @ 1A, 5V | 2,5 V @ 250 ähm | 8 NC @ 10 V | ± 10 V | - - - | 30W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | FDP2670 | 1.5900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 200 v | 19a (ta) | 10V | 130mohm @ 10a, 10V | 4,5 V @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1320 PF @ 100 V | - - - | 93W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | BAW76 | 1.0000 | ![]() | 7262 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | BAW76 | Standard | Do-35 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0070 | 10.000 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 75 V | 1 V @ 100 mA | 4 ns | 100 na @ 50 V | 175 ° C (max) | 300 ma | 2PF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||||
![]() | FMBA14 | 0,1900 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | Fmba1 | 700 MW | Supersot ™ -6 | Herunterladen | Ear99 | 8541.21.0095 | 1.750 | 30V | 1.2a | 100NA (ICBO) | 2 NPN (Dual) | 1,5 V @ 100 µA, 100 mA | 20000 @ 100ma, 5V | 1,25 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | ZTX614 | - - - | ![]() | 3011 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 378 | 100 v | 800 mA | 100NA (ICBO) | NPN - Darlington | 1,25 V @ 8ma, 800 mA | 10000 @ 500 mA, 5V | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | 1md2 | 0,0200 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 0000.00.0000 | 10.000 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX79C30-T50A | 0,0200 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-BZX79C30-T50A | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 50 na @ 21 v | 30 v | 80 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | BD239ATU | - - - | ![]() | 4709 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 30 w | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 60 v | 2 a | 300 µA | Npn | 700mv @ 200 Ma, 1a | 15 @ 1a, 4V | - - - | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FSBB15CH60F | 15.2500 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 3 | Schüttgut | Aktiv | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | IGBT | FSBB15 | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 15 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FSAM30SM60A | 62.5600 | ![]() | 398 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 2 | Schüttgut | Aktiv | K. Loch | 32-Powerdip-Modul (1,370 ", 34,80 mm) | IGBT | FSAM30 | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | Reichweiite Betroffen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 30 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mm5z4v7 | 0,0300 | ![]() | 3685 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C. | Oberflächenhalterung | SC-79, SOD-523F | 500 MW | SOD-523F | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-mm5z4v7-600039 | 1 | 3 µa @ 2 V | 4,7 v | 80 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX85C11TR5K | 0,0200 | ![]() | 185 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0050 | 5.000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1md2_fdh3369c | 0,0200 | ![]() | 4131 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 0000.00.0000 | 9.992 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDY4001CZ | 0,1000 | ![]() | 111 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | FDY40 | MOSFET (Metalloxid) | 446 MW | SOT-563F | Herunterladen | Nicht Anwendbar | Ear99 | 8541.21.0095 | 3.000 | N und p-kanal | 20V | 200 mA, 150 mA | 5OHM @ 200 Ma, 4,5 V. | 1,5 V @ 250 ähm | 1,1NC @ 4,5V | 60pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||||
![]() | Fga40n60ufdtu | 2.1700 | ![]() | 142 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 160 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 142 | 300 V, 20a, 10ohm, 15 V. | 95 ns | - - - | 600 V | 40 a | 160 a | 3v @ 15V, 20a | 470 µJ (EIN), 130 µJ (AUS) | 77 NC | 15ns/65ns | |||||||||||||||||||||||||||||||||||||||
![]() | KSC900GTA | 0,0200 | ![]() | 9320 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 12.000 | 25 v | 50 ma | 50na (ICBO) | Npn | 200mv @ 2ma, 20 mA | 200 @ 500 ähm, 3v | 100 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | FFPF15U120Stu | - - - | ![]() | 7989 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-2 Full Pack | Standard | To-220f-2l | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1200 V | 3,5 V @ 15 a | 100 ns | 15 µA @ 1200 V | -65 ° C ~ 150 ° C. | 15a | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5257B-FS | 2.0200 | ![]() | 185 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 162 | 1,2 V @ 200 Ma | 100 Na @ 25 V. | 33 v | 58 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | 2N5550TFR | 0,0400 | ![]() | 76 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7.416 | 140 v | 600 mA | 100NA (ICBO) | Npn | 250mv @ 5 mA, 50 mA | 60 @ 10ma, 5V | 300 MHz | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMA530PZ | - - - | ![]() | 5634 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | MOSFET (Metalloxid) | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 418 | P-Kanal | 30 v | 6.8a (ta) | 4,5 V, 10 V. | 35mohm @ 6.8a, 10V | 3v @ 250 ähm | 24 nc @ 10 v | ± 25 V | 1070 PF @ 15 V | - - - | 2.4W (TA) | ||||||||||||||||||||||||||||||||||||||||
![]() | FDS4070N3 | 1.6200 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 15.3a (ta) | 10V | 7,5 MOHM @ 15,3a, 10V | 5 V @ 250 ähm | 67 NC @ 10 V | ± 20 V | 2819 PF @ 20 V | - - - | 3W (TA) | |||||||||||||||||||||||||||||||||||||||
![]() | MJE2955Ttu | - - - | ![]() | 3619 | 0.00000000 | Fairchild Semiconductor | MJE2955T | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 600 MW | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 60 v | 10 a | 700 ähm | PNP | 8v @ 3,3a, 10a | 20 @ 4a, 4V | 2MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | 1N5817 | 5.2900 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | DO-204AC, DO-15, Axial | 1N5817 | Schottky | Do15/do204ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 57 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 20 v | 750 mv @ 3 a | 1 ma @ 20 v | -50 ° C ~ 150 ° C. | 1a | - - - |
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