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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | BZX55C6V8 | 0,0600 | ![]() | 209 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 3 v | 6,8 v | 8 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSD1621TTF | 0,0600 | ![]() | 56 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 25 v | 2 a | 100NA (ICBO) | Npn | 400mv @ 75 mA, 1,5a | 200 @ 100 Ma, 2V | 150 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BC183LC | 1.0000 | ![]() | 1099 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 40 @ 10 µA, 5 V | 150 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5232BTR | 0,0300 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1,2 V @ 200 Ma | 5 µa @ 3 V | 5.6 v | 11 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EGP20J | 0,2200 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | DO-204AC, DO-15, Axial | Standard | Do-15 | Herunterladen | Ear99 | 8541.10.0080 | 1,385 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,7 V @ 2 a | 75 ns | 5 µa @ 600 V | -65 ° C ~ 150 ° C. | 2a | 45PF @ 4V, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | GBPC35005 | 2.6000 | ![]() | 9172 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC | Standard | GBPC | Herunterladen | Ear99 | 8541.10.0080 | 100 | 1,1 V @ 17.5 a | 5 µa @ 50 V | 35 a | Einphase | 50 v | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBT4126 | - - - | ![]() | 9358 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT4126 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 25 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 250 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA75343P3 | 0,7800 | ![]() | 643 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 75a (TC) | 10V | 9mohm @ 75a, 10V | 4v @ 250 ähm | 205 NC @ 20 V | ± 20 V | 3000 PF @ 25 V. | - - - | 270W (TC) | |||||||||||||||||||||||||||||||||||||||||
SI6433DQ | 1.0900 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | MOSFET (Metalloxid) | 8-tssop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 2.500 | P-Kanal | 20 v | 4,5a (TA) | 1,8 V, 4,5 V. | 47mohm @ 4,5a, 4,5 V. | 1,5 V @ 250 ähm | 18 NC @ 4,5 V. | ± 8 v | 1193 PF @ 10 V | - - - | 600 MW (TA) | ||||||||||||||||||||||||||||||||||||||||
![]() | RFD14N05SM9A_NL | - - - | ![]() | 5637 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 50 v | 14a (TC) | 10V | 100mohm @ 14a, 10V | 4v @ 250 ähm | 40 NC @ 20 V | ± 20 V | 570 PF @ 25 V. | - - - | 48W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | IRFR420T | 0,6200 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | IRFR420 | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-IRFR420T-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SS8550BBU | 0,0300 | ![]() | 2249 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-92-3 | Herunterladen | Ear99 | 8541.29.0075 | 2,493 | 25 v | 1,5 a | 100NA (ICBO) | PNP | 500mv @ 80 mA, 800 mA | 85 @ 100 mA, 1V | 200 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSB50325s | 4.0400 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | SPM® | Schüttgut | Veraltet | Oberflächenhalterung | 23-Powermd-Modul, Möwenflügel | Mosfet | Herunterladen | ROHS3 -KONFORM | Ear99 | 8542.39.0001 | 450 | 3 Phase | 1,5 a | 250 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4148WT | 0,0300 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | 1N4148 | Standard | Herunterladen | Ear99 | 8541.10.0070 | 11.539 | 4 ns | 125 Ma | 2PF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSD471ACGBU | 0,0200 | ![]() | 790 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 30 v | 1 a | 100NA (ICBO) | Npn | 500mv @ 100 mA, 1a | 200 @ 100ma, 1V | 130 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | US2DA | 0,1100 | ![]() | 9688 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AC, SMA | Standard | Do-214AC (SMA) | Herunterladen | Ear99 | 8541.10.0080 | 1,984 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 1 V @ 1,5 a | 50 ns | 5 µa @ 200 V. | -55 ° C ~ 150 ° C. | 1,5a | 50pf @ 4v, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQA13N50CF | 1.0000 | ![]() | 8834 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 15a (TC) | 10V | 480MOHM @ 7,5a, 10V | 4v @ 250 ähm | 56 NC @ 10 V | ± 30 v | 2055 PF @ 25 V. | - - - | 218W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | FDS2170N3 | 2.0700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 200 v | 3a (ta) | 10V | 128mohm @ 3a, 10V | 4,5 V @ 250 ähm | 36 NC @ 10 V | ± 20 V | 1292 PF @ 100 V | - - - | 3W (TA) | |||||||||||||||||||||||||||||||||||||||||
![]() | Fga30n60lsdtu | 2.9000 | ![]() | 551 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA30N60 | Standard | 480 w | To-3p | Herunterladen | Ear99 | 8542.39.0001 | 104 | 400 V, 30a, 6,8 Ohm, 15 V. | 35 ns | TRABENFELD STOPP | 600 V | 60 a | 90 a | 1,4 V @ 15V, 30a | 1,1MJ (EIN), 21MJ (AUS) | 225 NC | 18ns/250ns | |||||||||||||||||||||||||||||||||||||||||
![]() | FQA12N60 | 1.4700 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 600 V | 12a (TC) | 10V | 700MOHM @ 6a, 10V | 5 V @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1900 PF @ 25 V. | - - - | 240W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | FDMS0346 | 0,1800 | ![]() | 108 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | MOSFET (Metalloxid) | Power56 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 25 v | 17a (ta), 28a (TC) | 4,5 V, 10 V. | 5.8mohm @ 17a, 10V | 3v @ 250 ähm | 25 NC @ 10 V | ± 20 V | 1625 PF @ 13 V. | - - - | 2,5 W (TA), 33W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | FFP06U40DNTU | 0,3600 | ![]() | 6200 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 | Standard | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 617 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 400 V | 6a | 1,4 V @ 6 a | 50 ns | 20 µA @ 400 V | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BD14016stu | - - - | ![]() | 5478 | 0.00000000 | Fairchild Semiconductor | BD140 | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,25 w | To-126-3 | - - - | 2156-BD14016stu | 1 | 80 v | 1,5 a | 100NA (ICBO) | PNP | 500 mv @ 50 mA, 500 mA | 100 @ 150 mA, 2V | - - - | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQA10N80 | 1.7100 | ![]() | 58 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 800 V | 9,8a (TC) | 10V | 1,05OHM @ 4,9a, 10V | 5 V @ 250 ähm | 71 NC @ 10 V | ± 30 v | 2700 PF @ 25 V. | - - - | 240W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | SS23 | 1.0000 | ![]() | 6808 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214aa, SMB | Schottky | Do-214AA (SMB) | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 30 v | 500 mV @ 2 a | 400 µa @ 30 V | -65 ° C ~ 125 ° C. | 2a | - - - | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FLZ4V7A | 1.0000 | ![]() | 4660 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 190 na @ 1 v | 4.6 v | 21 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Fqi11p06tu | 0,3700 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 60 v | 11.4a (TC) | 10V | 175mohm @ 5.7a, 10V | 4v @ 250 ähm | 17 NC @ 10 V | ± 25 V | 550 PF @ 25 V. | - - - | 3.13W (TA), 53W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | FFPF15UP20STtu | 0,4400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-2 Full Pack | Standard | To-220f-2l | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 50 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 1,15 V @ 15 a | 45 ns | 100 µA @ 200 V. | -65 ° C ~ 150 ° C. | 15a | - - - | |||||||||||||||||||||||||||||||||||||||||||||
![]() | SFR9220TM | 1.0000 | ![]() | 3228 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 200 v | 3.1a (TC) | 10V | 1,5OHM @ 1,6a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 30 v | 540 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | NDP5060 | 0,5200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | Verkäfer undefiniert | 2156P5060-600039 | 1 |
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