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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | 1N4730A-T50A-FS | 0,0300 | ![]() | 54 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | Do-41 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 50 µa @ 1 V | 3,9 v | 9 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | EGP30C | 0,2700 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-201ad, axial | Standard | Do-201ad | Herunterladen | Ear99 | 8541.10.0080 | 1,212 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 150 v | 950 mv @ 3 a | 50 ns | 5 µa @ 150 V | -65 ° C ~ 150 ° C. | 3a | 95PF @ 4V, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BC32716 | 0,0500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | HUF75309P3 | 0,4100 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 19A (TC) | 10V | 70 MOHM @ 19A, 10V | 4v @ 250 ähm | 24 NC @ 20 V | ± 20 V | 350 PF @ 25 V. | - - - | 55W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | FMG1G50US60H | 34.0000 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr-Ga | 250 w | Standard | 19 Uhr-Ga | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 15 | Einzel | - - - | 600 V | 50 a | 2,8 V @ 15V, 50a | 250 µA | NEIN | 3.46 NF @ 30 V | |||||||||||||||||||||||||||||||||||||||||||
MMSZ5244B | - - - | ![]() | 9892 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | SOD-123 | MMSZ52 | 500 MW | SOD-123 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 622 | 900 mv @ 10 mA | 100 na @ 10 v | 14 v | 15 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | SGR15N40LTM | 0,8000 | ![]() | 765 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SGR15 | Standard | 45 w | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | - - - | Graben | 400 V | 130 a | 8v @ 4,5 V, 130a | - - - | - - - | |||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4755a | 0,0300 | ![]() | 43 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | 1 w | Herunterladen | Ear99 | 8541.10.0050 | 9.616 | 5 µA @ 32,7 V. | 43 v | 70 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQD6N40TM | 1.0000 | ![]() | 4740 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 400 V | 4.2a (TC) | 10V | 1,15OHM @ 2,1a, 10 V. | 5 V @ 250 ähm | 17 NC @ 10 V | ± 30 v | 620 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | Fdn338p | - - - | ![]() | 3808 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | 0000.00.0000 | 1 | P-Kanal | 20 v | 1,6a (ta) | 2,5 V, 4,5 V. | 115mohm @ 1,6a, 4,5 V. | 1,5 V @ 250 ähm | 6,2 NC @ 4,5 V. | ± 8 v | 451 PF @ 10 V. | - - - | 500 MW (TA) | |||||||||||||||||||||||||||||||||||||||||||
![]() | KSH45H11ITU | - - - | ![]() | 9624 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | 1,75 w | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 80 v | 8 a | 10 µA | PNP | 1v @ 400 mA, 8a | 60 @ 2a, 1V | 40 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | FDS6064N3 | 1.6200 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 20 v | 23a (ta) | 1,8 V, 4,5 V. | 4mohm @ 23a, 4,5 V. | 1,5 V @ 250 ähm | 98 NC @ 4,5 V. | ± 8 v | 7191 PF @ 10 V | - - - | 3W (TA) | |||||||||||||||||||||||||||||||||||||||||
![]() | 1n5992b | 1.8400 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 3 µa @ 1,5 V | 4,7 v | 70 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | D44H11TU | 1.0000 | ![]() | 1296 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | D44H | 60 w | To-220-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 80 v | 10 a | 10 µA | Npn | 1v @ 400 mA, 8a | 40 @ 4a, 1V | 50 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | BZX84C12 | - - - | ![]() | 6397 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5,42% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 250 MW | SOT-23-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-BZX84C12-600039 | 1 | 900 mv @ 10 mA | 100 na @ 8 v | 12 v | 10 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N7000 | - - - | ![]() | 9204 | 0.00000000 | Fairchild Semiconductor | Stripfet ™ | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 2N70 | MOSFET (Metalloxid) | To-92-3 | Herunterladen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 60 v | 350 Ma (TC) | 4,5 V, 10 V. | 5ohm @ 500 mA, 10V | 3v @ 250 ähm | 2 NC @ 5 V. | ± 18 v | 43 PF @ 25 V. | - - - | 350 MW (TA) | |||||||||||||||||||||||||||||||||||||||||
![]() | 1N4750A_NL | 0,0500 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | Do-41 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0050 | 6.662 | 5 µa @ 20,6 V | 27 v | 35 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX55C6V8 | 0,0600 | ![]() | 209 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 3 v | 6,8 v | 8 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSD1621TTF | 0,0600 | ![]() | 56 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 25 v | 2 a | 100NA (ICBO) | Npn | 400mv @ 75 mA, 1,5a | 200 @ 100 Ma, 2V | 150 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BC183LC | 1.0000 | ![]() | 1099 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 40 @ 10 µA, 5 V | 150 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5232BTR | 0,0300 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1,2 V @ 200 Ma | 5 µa @ 3 V | 5.6 v | 11 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EGP20J | 0,2200 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | DO-204AC, DO-15, Axial | Standard | Do-15 | Herunterladen | Ear99 | 8541.10.0080 | 1,385 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,7 V @ 2 a | 75 ns | 5 µa @ 600 V | -65 ° C ~ 150 ° C. | 2a | 45PF @ 4V, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | GBPC35005 | 2.6000 | ![]() | 9172 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC | Standard | GBPC | Herunterladen | Ear99 | 8541.10.0080 | 100 | 1,1 V @ 17.5 a | 5 µa @ 50 V | 35 a | Einphase | 50 v | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBT4126 | - - - | ![]() | 9358 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT4126 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 25 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 250 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA75343P3 | 0,7800 | ![]() | 643 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 75a (TC) | 10V | 9mohm @ 75a, 10V | 4v @ 250 ähm | 205 NC @ 20 V | ± 20 V | 3000 PF @ 25 V. | - - - | 270W (TC) | |||||||||||||||||||||||||||||||||||||||||
SI6433DQ | 1.0900 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | MOSFET (Metalloxid) | 8-tssop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 2.500 | P-Kanal | 20 v | 4,5a (TA) | 1,8 V, 4,5 V. | 47mohm @ 4,5a, 4,5 V. | 1,5 V @ 250 ähm | 18 NC @ 4,5 V. | ± 8 v | 1193 PF @ 10 V | - - - | 600 MW (TA) | ||||||||||||||||||||||||||||||||||||||||
![]() | RFD14N05SM9A_NL | - - - | ![]() | 5637 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 50 v | 14a (TC) | 10V | 100mohm @ 14a, 10V | 4v @ 250 ähm | 40 NC @ 20 V | ± 20 V | 570 PF @ 25 V. | - - - | 48W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | IRFR420T | 0,6200 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | IRFR420 | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-IRFR420T-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SS8550BBU | 0,0300 | ![]() | 2249 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-92-3 | Herunterladen | Ear99 | 8541.29.0075 | 2,493 | 25 v | 1,5 a | 100NA (ICBO) | PNP | 500mv @ 80 mA, 800 mA | 85 @ 100 mA, 1V | 200 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FSB50325s | 4.0400 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | SPM® | Schüttgut | Veraltet | Oberflächenhalterung | 23-Powermd-Modul, Möwenflügel | Mosfet | Herunterladen | ROHS3 -KONFORM | Ear99 | 8542.39.0001 | 450 | 3 Phase | 1,5 a | 250 V | 1500 VRMs |
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