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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min rds an) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | 1N5352BRLG | - - - | ![]() | 2884 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | T-18, axial | 5 w | Axial | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 1 a | 1 µA @ 11,5 V. | 15 v | 2,5 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDP14AN06LA0 | 3.0100 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 10A (TA), 67A (TC) | 5v, 10V | 11.6mohm @ 67a, 10V | 3v @ 250 ähm | 31 NC @ 5 V. | ± 20 V | 2900 PF @ 25 V. | - - - | 125W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | MM3Z75VC | 0,0400 | ![]() | 172 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 7.340 | 1 V @ 10 mA | 45 NA @ 52,5 V. | 75 V | 240 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FJAFS1510ATU | 2.2800 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | ESBC ™ | Schüttgut | Aktiv | -55 ° C ~ 125 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | 60 w | To-3Pf | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FJAFS1510ATU-600039 | 1 | 750 V | 6 a | 100 µA | Npn | 500mv @ 1,5a, 6a | 7 @ 3a, 5v | 15,4 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Fga15n120antdtu | - - - | ![]() | 5007 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA15N120 | Standard | 186 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | 600 V, 15a, 10ohm, 15 V. | 330 ns | Npt und griffen | 1200 V | 30 a | 45 a | 2,4 V @ 15V, 15a | 3MJ (EIN), 600 µJ (AUS) | 120 NC | 15ns/160ns | |||||||||||||||||||||||||||||||||||||||||
![]() | FGD3440G2 | - - - | ![]() | 5523 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | FGD3 | Logik | 166 w | To-252aa | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | 300 V, 6,5a, 1kohm, 5 V. | - - - | 400 V | 26.9 a | 1,2 V @ 4V, 6a | - - - | 24 NC | -/5,3 µs | |||||||||||||||||||||||||||||||||||||||||
![]() | HUF75939S3ST | 2.3100 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 200 v | 22a (TC) | 10V | 125mohm @ 22a, 10V | 4v @ 250 ähm | 152 NC @ 20 V | ± 20 V | 2200 PF @ 25 V. | - - - | 180W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | FFPF15U20DPTU | - - - | ![]() | 2187 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 Full Pack | Standard | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 50 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 200 v | 15a | 1,2 V @ 15 a | 40 ns | 15 µA @ 200 V. | -65 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | SB160 | 0,0900 | ![]() | 128 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | DO-204AC, DO-15, Axial | Schottky | Do15/do204ac | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 60 v | 700 mv @ 1 a | 500 µa @ 60 V | -50 ° C ~ 150 ° C. | 1a | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FMG1G100US60L | 37.9900 | ![]() | 46 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr-Ga | 400 w | Standard | 19 Uhr-Ga | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 15 | Einzel | - - - | 600 V | 100 a | 2,8 V @ 15V, 100a | 250 µA | NEIN | 10.84 NF @ 30 V | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FcPf7n60nt | 1.4900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Supremos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8541.29.0095 | 202 | N-Kanal | 600 V | 6.8a (TC) | 10V | 520mohm @ 3.4a, 10V | 4v @ 250 ähm | 35.6 NC @ 10 V. | ± 30 v | 960 PF @ 100 V | - - - | 30,5 W (TC) | |||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9V3036D3S | 1.2300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Rohr | Veraltet | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Logik | 150 w | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | 300 V, 1kohm, 5V | - - - | 360 V | 21 a | 1,6 V @ 4V, 6a | - - - | 17 NC | -/4,8 µs | ||||||||||||||||||||||||||||||||||||||||||||
![]() | NDP7061 | 2.3200 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 64a (TC) | 10V | 16mohm @ 35a, 10V | 4v @ 250 ähm | 100 nc @ 10 v | ± 20 V | 1930 PF @ 25 V. | - - - | 130W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | Fypf2045dntu | 0,5100 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 Full Pack | Schottky | To-220f-3 | Herunterladen | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 45 V | 20a | 700 mV @ 20 a | 1 ma @ 45 v | -65 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FGPF7N60RUFDTU | 0,5100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Standard | 41 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 300 V, 7a, 30ohm, 15 V. | 65 ns | - - - | 600 V | 14 a | 21 a | 2,8 V @ 15V, 7a | 230 µJ (EIN), 100 µJ (AUS) | 24 NC | 60ns/60ns | ||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4734A-T50R | 0,0500 | ![]() | 9390 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 10 µa @ 2 V | 5.6 v | 5 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FPDB30PH60 | 29.3200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | PFC SPM® 3 | Schüttgut | Aktiv | K. Loch | 27-Powerdip-Modul (1,205 ", 30.60 mm) | IGBT | FPDB30 | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8542.39.0001 | 1 | 2 Phase | 20 a | 600 V | 2500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | But11TU | 0,4000 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 100 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 400 V | 5 a | 1ma | Npn | 1,5 V @ 600 Ma, 3a | - - - | - - - | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FFH50US60S | 1.0000 | ![]() | 8423 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-247-2 | Standard | To-247-2 | Herunterladen | Ear99 | 8542.39.0001 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,54 V @ 50 a | 124 ns | 100 µA @ 600 V | -55 ° C ~ 175 ° C. | 50a | - - - | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMA1028nz | 0,4600 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | FDMA1028 | MOSFET (Metalloxid) | 700 MW | 6-microfet (2x2) | Herunterladen | Ear99 | 8541.29.0095 | 654 | 2 n-kanal (dual) | 20V | 3.7a | 68mohm @ 3,7a, 4,5 V. | 1,5 V @ 250 ähm | 6nc @ 4,5 V | 340PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||||||||
![]() | SB350 | 0,1200 | ![]() | 1361 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-201aa, Do-27, axial | Schottky | Do-201 | Herunterladen | Ear99 | 8541.10.0080 | 1,954 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 50 v | 680 mv @ 3 a | 500 µa @ 50 V | -50 ° C ~ 150 ° C. | 3a | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUFA76423D3ST | 0,3300 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 32mohm @ 20a, 10V | 3v @ 250 ähm | 34 NC @ 10 V. | ± 16 v | 1060 PF @ 25 V. | - - - | 85W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | FGH20N60SFDTU-F085 | - - - | ![]() | 4352 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 165 w | To-247 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 400 V, 20A, 10OHM, 15 V. | 40 ns | Feldstopp | 600 V | 40 a | 60 a | 2,8 V @ 15V, 20a | 430 µJ (EIN), 130 µJ (AUS) | 66 NC | 13ns/90ns | |||||||||||||||||||||||||||||||||||||||||||
![]() | FPAM50LH60G | - - - | ![]() | 5732 | 0.00000000 | Fairchild Semiconductor | PFC SPM® 2 | Schüttgut | Veraltet | K. Loch | 32-Powerdip-Modul (1,370 ", 34,80 mm) | IGBT | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FPAM50LH60G-600039 | 1 | 2 Phase | 50 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||||||
FSB50260SF | 4.4800 | ![]() | 540 | 0.00000000 | Fairchild Semiconductor | Motion SPM® 5 Superfet® | Rohr | Veraltet | K. Loch | 23-Powerdip-Modul (0,551 ", 14,00 mm) | Mosfet | Herunterladen | Nicht Anwendbar | Ear99 | 8542.39.0001 | 270 | 3 Phase | 1.7 a | 600 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDU8874 | 0,7600 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 30 v | 18a (TA), 116a (TC) | 4,5 V, 10 V. | 5.1MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 72 NC @ 10 V | ± 20 V | 2990 PF @ 15 V | - - - | 110W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | MPS6518 | - - - | ![]() | 6828 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.365 | 40 v | 200 ma | 500NA (ICBO) | PNP | 500mv @ 5ma, 50 mA | 150 @ 2MA, 10V | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | PN4250 | 0,0500 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 40 v | 500 mA | 10NA (ICBO) | PNP | 250 mV @ 500 µA, 10 mA | 250 @ 100 µA, 5V | - - - | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | RF1S9640SM9A | 1.6400 | ![]() | 1199 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 165 | P-Kanal | 200 v | 11a (TC) | 10V | 500mohm @ 6a, 10V | 4v @ 250 ähm | 90 nc @ 10 v | ± 20 V | 1100 PF @ 25 V. | - - - | 125W (TC) | ||||||||||||||||||||||||||||||||||||||||
![]() | BZX55C39 | 0,0300 | ![]() | 8361 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 9.000 | 1,3 V @ 100 mA | 100 na @ 28 v | 39 v | 90 Ohm |
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