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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FGH40T65SHD-F155 | 1.0000 | ![]() | 5048 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | FGH40 | Standard | 268 w | To-247 Lange Hinese | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 400 V, 40a, 6OHM, 15 V. | 31.8 ns | TRABENFELD STOPP | 650 V | 80 a | 120 a | 2,1 V @ 15V, 40a | 1,01MJ (EIN), 297 µJ (AUS) | 72.2 NC | 19,2ns/65,6ns | |||||||||||||||||||||||||||||||
![]() | IRLS540A | 0,7100 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 17a (TC) | 5v | 58mohm @ 8.5a, 5V | 2v @ 250 ähm | 54 NC @ 5 V. | ± 20 V | 1580 PF @ 25 V. | - - - | 44W (TC) | ||||||||||||||||||||||||||||||||
![]() | FDG314p | 0,1000 | ![]() | 335 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metalloxid) | SC-88 (SC-70-6) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 25 v | 650 Ma (TA) | 2,7 V, 4,5 V. | 1,1OHM @ 500 mA, 4,5 V. | 1,5 V @ 250 ähm | 1,5 NC @ 4,5 V. | ± 8 v | 63 PF @ 10 V | - - - | 750 MW (TA) | ||||||||||||||||||||||||||||||||||
![]() | NSBC114YDXV6T1G | 0,0800 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Ear99 | 8542.39.0001 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDD8880_F054 | 0,4200 | ![]() | 501 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4739atr | 0,0300 | ![]() | 44 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Ear99 | 8541.10.0050 | 11.053 | 10 µa @ 7 V. | 9.1 v | 5 Ohm | ||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4148TR | 0,0200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | 1N4148 | Standard | Do-35 | Herunterladen | Ear99 | 8541.10.0070 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 10 mA | 4 ns | 5 µa @ 75 V | -65 ° C ~ 175 ° C. | 200 ma | 4PF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FQP5N40 | - - - | ![]() | 5148 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 400 V | 4,5a (TC) | 10V | 1,6OHM @ 2,25A, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 460 PF @ 25 V. | - - - | 70W (TC) | ||||||||||||||||||||||||||||||||||
![]() | BD438S | 0,3100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 36 w | To-126-3 | Herunterladen | Ear99 | 8541.29.0095 | 1.037 | 45 V | 4 a | 100 µA | PNP | 600mv @ 200 Ma, 2a | 30 @ 10ma, 5v | 3MHz | |||||||||||||||||||||||||||||||||||||||
![]() | 1N5233B | 0,0300 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | K. Loch | 500 MW | - - - | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 5 µa @ 3,5 V | 6 v | 7 Ohm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MMSZ5254B-FS | 1.0000 | ![]() | 9212 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FGB3040Cs | 1.8200 | ![]() | 56 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-7, d²pak (6 Leads + Tab), to-263CB | Logik | 150 w | D²pak-6 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 300 V, 1kohm, 5V | - - - | 430 v | 21 a | 1,6 V @ 4V, 6a | - - - | 15 NC | -/4,7 µs | |||||||||||||||||||||||||||||||||||||
![]() | 2N5308 | - - - | ![]() | 6197 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 22 | 40 v | 1.2 a | 100NA (ICBO) | NPN - Darlington | 1,4 V @ 200 UA, 200 Ma | 7000 @ 2MA, 5V | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | KSD560Ytu | - - - | ![]() | 5589 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | KSD560 | 1,5 w | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 100 v | 5 a | 1 µA (ICBO) | NPN - Darlington | 1,5 V @ 3ma, 3a | 5000 @ 3a, 2v | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | Mm5z6v8 | 1.0000 | ![]() | 6251 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-79, SOD-523 | MM5Z6 | 200 MW | SOD-523 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 8.000 | 2 µa @ 4 V. | 6,8 v | 15 Ohm | ||||||||||||||||||||||||||||||||||||||
![]() | FDMS8026s | 0,9600 | ![]() | 72 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8541.29.0095 | 314 | N-Kanal | 30 v | 19A (TA), 22A (TC) | 4,5 V, 10 V. | 4,3 MOHM @ 19A, 10V | 3V @ 1ma | 37 NC @ 10 V. | ± 20 V | 2280 PF @ 15 V | - - - | 2,5 W (TA), 41W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FDI025N06 | 3.0400 | ![]() | 8621 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 29 | N-Kanal | 60 v | 265a (TC) | 10V | 2,5 MOHM @ 75A, 10V | 4,5 V @ 250 ähm | 226 NC @ 10 V | ± 20 V | 14885 PF @ 25 V. | - - - | 395W (TC) | ||||||||||||||||||||||||||||||||||
![]() | NDP7050 | 2.4000 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 50 v | 75a (TC) | 10V | 13mohm @ 40a, 10V | 4v @ 250 ähm | 115 NC @ 10 V | ± 20 V | 3600 PF @ 25 V. | - - - | 150W (TC) | ||||||||||||||||||||||||||||||||||
![]() | SFR9014TF | 0,1900 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 60 v | 5.3a (TC) | 10V | 500MOHM @ 2,7a, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 30 v | 350 PF @ 25 V. | - - - | 2,5 W (TA), 24 W (TC) | ||||||||||||||||||||||||||||||||||
![]() | HGTG30N60B3_NL | 6.0400 | ![]() | 51 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 208 w | To-247 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 51 | 480 V, 60A, 3OHM, 15 V. | Npt | 600 V | 60 a | 220 a | 1,9 V @ 15V, 30a | 550 µJ (EIN), 680 µJ (AUS) | 250 NC | 36ns/137ns | |||||||||||||||||||||||||||||||||
![]() | FGPF4633TU | 1.0000 | ![]() | 8367 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Standard | 30,5 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | 200 V, 20a, 5ohm, 15 V | Graben | 330 V | 300 a | 1,8 V @ 15V, 70a | - - - | 60 nc | 8ns/52ns | ||||||||||||||||||||||||||||||||||
![]() | 2N4401RA | - - - | ![]() | 7300 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 2N4401 | 625 MW | To-92 (to-226) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 2.000 | 40 v | 600 mA | 100na | Npn | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 1V | 250 MHz | |||||||||||||||||||||||||||||||||||
![]() | Irf530a | 0,6300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 14a (TC) | 10V | 110Mohm @ 7a, 10V | 4v @ 250 ähm | 36 NC @ 10 V | - - - | 790 PF @ 25 V. | - - - | 55W (TC) | |||||||||||||||||||||||||||||||||||
![]() | FDMB2307NZ | 1.0000 | ![]() | 5524 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | FDMB2307 | MOSFET (Metalloxid) | 800 MW | 6-mlp (2x3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 N-Kanal (dual) gemeinsame Abfluss | - - - | - - - | - - - | - - - | 28nc @ 5v | - - - | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||
![]() | HUF75639S3ST_Q | 1.1700 | ![]() | 36 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | HUF75639 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 800 | - - - | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX85C7V5 | 0,0300 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | K. Loch | Do-204Al, Do-41, axial | BZX85C7 | 1,3 w | DO-41G | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 1 µA @ 4,5 V. | 7,5 v | 3 Ohm | |||||||||||||||||||||||||||||||||||||
![]() | GBPC3508 | 3.0800 | ![]() | 100 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC | Standard | GBPC | Herunterladen | Ear99 | 8541.10.0080 | 100 | 1,1 V @ 17.5 a | 5 µa @ 800 V | 35 a | Einphase | 800 V | |||||||||||||||||||||||||||||||||||||||||
![]() | FDP13AN06A0 | 0,9000 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 10.9a (TA), 62A (TC) | 6 V, 10V | 13,5 MOHM @ 62A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1350 PF @ 25 V. | - - - | 115W (TC) | ||||||||||||||||||||||||||||||||||
![]() | HGTG20N60B3-FS | 3.5900 | ![]() | 42 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 165 w | To-247 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | - - - | - - - | 600 V | 40 a | 160 a | 2v @ 15V, 20a | - - - | 135 NC | - - - | |||||||||||||||||||||||||||||||||
![]() | BC846a | 0,0700 | ![]() | 96 | 0.00000000 | Fairchild Semiconductor | SOT-23 | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 200 MW | SOT-23 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 3.000 | 65 V | 100 ma | 100NA (ICBO) | Npn | 500 mV @ 5ma, 100 mA | 110 @ 2MA, 5V | 100 MHz |
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