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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Gewinnen | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | FDPF55N06 | 0,8700 | ![]() | 97 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 344 | N-Kanal | 60 v | 55a (TC) | 10V | 22mohm @ 27.5a, 10V | 4v @ 250 ähm | 37 NC @ 10 V. | ± 25 V | 1510 PF @ 25 V. | - - - | 48W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | FSB50550T | 10.5600 | ![]() | 410 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 5 | Schüttgut | Aktiv | K. Loch | 23-Powerdip-Modul (0,748 ", 19,00 mm) | Mosfet | FSB505 | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | Reichweiite Betroffen | Ear99 | 8542.39.0001 | 29 | 3 Phase | 1,8 a | 500 V | 1500 VRMs | |||||||||||||||||||||||||||||||||||||||||||
![]() | FCP165N65S3R0 | 2.1000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Superfet® III | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Verkäfer undefiniert | 2156-FCP165N65S3R0 | Ear99 | 8541.29.0095 | 155 | N-Kanal | 650 V | 19A (TC) | 10V | 165mohm @ 9.5a, 10V | 4,5 V @ 440 mA | 39 NC @ 10 V. | ± 30 v | 1500 PF @ 400 V | - - - | 154W (TC) | |||||||||||||||||||||||||||||||||||
![]() | 2N4125BU | - - - | ![]() | 6970 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.000 | 30 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 50 @ 2MA, 1V | - - - | |||||||||||||||||||||||||||||||||||||||||
![]() | FDS3601 | 0,3700 | ![]() | 49 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS36 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 100V | 1.3a | 480MOHM @ 1,3a, 10V | 4v @ 250 ähm | 5nc @ 10v | 153pf @ 50V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||||
![]() | RFD16N05LSM_NL | - - - | ![]() | 5616 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 50 v | 16a | 4V, 5V | 47mohm @ 16a, 5V | 2v @ 250 mA | 80 nc @ 10 v | ± 10 V | - - - | 60W | ||||||||||||||||||||||||||||||||||||
![]() | FQAF44N08 | 0,8300 | ![]() | 720 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 80 v | 35.6a (TC) | 10V | 34mohm @ 17.8a, 10V | 4v @ 250 ähm | 50 nc @ 10 v | ± 25 V | 1430 PF @ 25 V. | - - - | 83W (TC) | |||||||||||||||||||||||||||||||||||||
![]() | FQA10N80 | 1.7100 | ![]() | 58 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 800 V | 9,8a (TC) | 10V | 1,05OHM @ 4,9a, 10V | 5 V @ 250 ähm | 71 NC @ 10 V | ± 30 v | 2700 PF @ 25 V. | - - - | 240W (TC) | |||||||||||||||||||||||||||||||||||||
![]() | FFP06U40DNTU | 0,3600 | ![]() | 6200 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 | Standard | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 617 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 400 V | 6a | 1,4 V @ 6 a | 50 ns | 20 µA @ 400 V | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||||
![]() | FCI25N60N-F102 | - - - | ![]() | 8999 | 0.00000000 | Fairchild Semiconductor | Supremos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 600 V | 25a (TC) | 10V | 125mohm @ 12.5a, 10V | 4v @ 250 ähm | 74 NC @ 10 V | ± 30 v | 3352 PF @ 100 V | - - - | 216W (TC) | ||||||||||||||||||||||||||||||||||||||
![]() | Fjv3111rmtf | - - - | ![]() | 4062 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV311 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 40 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 250 MHz | 22 Kohms | ||||||||||||||||||||||||||||||||||||||||
![]() | BC32825ta | 0,0200 | ![]() | 1412 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 596 | 25 v | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | KSC2310YBU | 0,0500 | ![]() | 118 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 500 | 150 v | 50 ma | 100NA (ICBO) | Npn | 500mv @ 1ma, 10 mA | 120 @ 10 Ma, 5V | 100 MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | HUF755545S3S | 1.0000 | ![]() | 8349 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 80 v | 75a (TC) | 10V | 10MOHM @ 75A, 10V | 4v @ 250 ähm | 235 NC @ 20 V | ± 20 V | 3750 PF @ 25 V. | - - - | 270W (TC) | |||||||||||||||||||||||||||||||||||||
![]() | FJV1845PMTF | - - - | ![]() | 3428 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 300 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 120 v | 50 ma | 50na (ICBO) | Npn | 300 mV @ 1ma, 10 mA | 200 @ 1ma, 6v | 110 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FDMS5362L | 0,2900 | ![]() | 45 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMS5362 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PN200A-FS | 0,1000 | ![]() | 17 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 45 V | 500 mA | 50na | PNP | 400mv @ 20 mA, 200 mA | 300 @ 10 mA, 1V | 250 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FCPF380N60E | 1.0000 | ![]() | 3434 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | FCPF380 | MOSFET (Metalloxid) | To-220f | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 10.2a (TC) | 10V | 380Mohm @ 5a, 10V | 3,5 V @ 250 ähm | 45 nc @ 10 v | ± 20 V | 1770 PF @ 25 V. | - - - | 31W (TC) | |||||||||||||||||||||||||||||||||||||
![]() | KSP45TA | - - - | ![]() | 9895 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 350 V | 300 ma | 500NA | Npn | 750 mv @ 5ma, 50 mA | 50 @ 10 ma, 10V | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | TN2907A | 0,2700 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-226-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.500 | 60 v | 800 mA | 10NA (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | - - - | |||||||||||||||||||||||||||||||||||||||||
![]() | MJD31CTF-FS | 1.0000 | ![]() | 5695 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MJD31 | 1,56 w | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100 v | 3 a | 50 µA | Npn | 1,2 V @ 375 Ma, 3a | 25 @ 1a, 4V | 3MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FMC7G50US60 | - - - | ![]() | 3299 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Modul | 200 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 50 a | 2,8 V @ 15V, 50a | 250 µA | NEIN | 3.46 NF @ 30 V | |||||||||||||||||||||||||||||||||||||
![]() | 1N755a | 2.0800 | ![]() | 89 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 156 | 1,5 V @ 200 Ma | 100 na @ 1 v | 7,5 v | 6 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Fan5009amx | 0,3000 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Fan5009 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 2.500 | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N748ATR | - - - | ![]() | 2616 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 7.503 | 1,5 V @ 200 Ma | 10 µa @ 1 V | 3,9 v | 23 Ohm | |||||||||||||||||||||||||||||||||||||||||||
![]() | MPSL51 | 0,0400 | ![]() | 6686 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 446 | 100 v | 200 ma | 1 µA (ICBO) | PNP | 300mv @ 5ma, 50 mA | 40 @ 50 Ma, 5V | 60 MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | NJVMJB44H11T4G | 0,6700 | ![]() | 81 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | 2 w | D²pak | Herunterladen | Ear99 | 8541.29.0075 | 484 | 80 v | 10 a | 10 µA | Npn | 1v @ 400 mA, 8a | 40 @ 4a, 1V | 50 MHz | ||||||||||||||||||||||||||||||||||||||||||
![]() | KSC3953DSTU | 0,1000 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,3 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 1.920 | 120 v | 200 ma | 100NA (ICBO) | Npn | 1v @ 3ma, 30 mA | 60 @ 10 ma, 10V | 400 MHz | |||||||||||||||||||||||||||||||||||||||||
![]() | NDS352p | 0,3000 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 987 | P-Kanal | 20 v | 850 Ma (TA) | 4,5 V, 10 V. | 350Mohm @ 1a, 10V | 2,5 V @ 250 ähm | 4 NC @ 5 V. | ± 12 V | 125 PF @ 10 V. | - - - | 500 MW (TA) | |||||||||||||||||||||||||||||||||||||
![]() | MPSH11 | 0,0500 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | - - - | 25 v | 50 ma | Npn | 60 @ 4ma, 10V | 650 MHz | - - - |
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