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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Testedingung | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FSB50660SFS | - - - | ![]() | 5766 | 0.00000000 | Fairchild Semiconductor | Motion SPM® 5 Superfet® | Schüttgut | Aktiv | Oberflächenhalterung | 23-Powermd-Modul, Möwenflügel | Mosfet | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 3.1 a | 600 V | 1500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBZ5232B | 0,0200 | ![]() | 8809 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -55 ° C ~ 150 ° C. | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | Ear99 | 8541.10.0050 | 14.852 | 900 mv @ 10 mA | 5 µa @ 3 V | 5.6 v | 11 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4745atr | 0,0300 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1N4745 | 1 w | Do-41 | Herunterladen | Ear99 | 8541.10.0050 | 10,193 | 5 µA @ 12,2 V. | 16 v | 16 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4738a | 0,0300 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -55 ° C ~ 175 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | Do-41 | Herunterladen | Ear99 | 8541.10.0050 | 9.616 | 1,2 V @ 200 Ma | 10 µa @ 6 V | 8.2 v | 4,5 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N749atr | 0,0200 | ![]() | 67 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 5.000 | 1,5 V @ 200 Ma | 2 µa @ 1 V | 4.3 v | 22 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FJNS4206RTA | 0,0200 | ![]() | 9676 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 Kurzkörper | Fjns42 | 300 MW | To-92s | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.998 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 10 Kohms | 47 Kohms | |||||||||||||||||||||||||||||||||||||||||||
![]() | KSC10080BU | 0,0200 | ![]() | 630 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 800 MW | To-92-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-kSC10080BU-600039 | Ear99 | 8541.21.0095 | 1 | 60 v | 700 Ma | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 40 @ 50 Ma, 2V | 50 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | PN2222TF | 0,0500 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 5,805 | 30 v | 600 mA | 10NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 150 mA, 10mV | 300 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | ISL9N312AS3ST | 0,8700 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 58a (TC) | 4,5 V, 10 V. | 12mohm @ 58a, 10V | 3v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1450 PF @ 15 V | - - - | 75W (TA) | |||||||||||||||||||||||||||||||||||||||
![]() | 1n5261b | 1.8600 | ![]() | 137 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 162 | 1,2 V @ 200 Ma | 100 na @ 36 v | 47 v | 105 Ohm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FQD2N50TF | 0,3400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 500 V | 1,6a (TC) | 10V | 5.3OHM @ 800 mA, 10V | 5 V @ 250 ähm | 8 NC @ 10 V | ± 30 v | 230 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | Fqpf7n20 | 0,3100 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 4.8a (TC) | 10V | 690MOHM @ 2,4a, 10V | 5 V @ 250 ähm | 10 nc @ 10 v | ± 30 v | 400 PF @ 25 V. | - - - | 37W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | SSF10N80A | 2.4500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 800 V | 6,5a (TC) | 10V | 950mohm @ 3a, 10V | 3,5 V @ 250 ähm | 165 NC @ 10 V. | ± 30 v | 3500 PF @ 25 V. | - - - | 100 W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | 1N5282 | 1.0000 | ![]() | 3457 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0070 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 80 v | 900 mv @ 100 mA | 4 ns | 100 na @ 55 V | 175 ° C (max) | 200 ma | 2.5PF @ 0V, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDS6688 | 1.0700 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 16a (ta) | 4,5 V, 10 V. | 6mohm @ 16a, 10V | 3v @ 250 ähm | 56 NC @ 5 V. | ± 20 V | 3888 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||||||||||||||||||
![]() | BC239BTA | 0,0200 | ![]() | 6681 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1,241 | 25 v | 100 ma | 15na | Npn | 600mv @ 5ma, 100 mA | 180 @ 2MA, 5V | 250 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FJX3906TF | 0,0500 | ![]() | 268 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | SC-70, SOT-323 | 350 MW | SOT-323 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 40 v | 200 ma | 50na | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | |||||||||||||||||||||||||||||||||||||||||||
![]() | KSC2001YBU | 0,0200 | ![]() | 147 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 600 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 10.000 | 25 v | 700 Ma | 100NA (ICBO) | Npn | 600mv @ 70 mA, 700 mA | 135 @ 100 mA, 1V | 170 MHz | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FFP06U20DNTU | 0,2000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 | Standard | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 1.000 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 200 v | 6a | 1,2 V @ 6 a | 35 ns | 6 µa @ 200 V. | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N6002B | 2.0000 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 163 | 1,2 V @ 200 Ma | 100 NA @ 9.1 V. | 12 v | 22 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FGA90N30TU | 1.1500 | ![]() | 891 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 219 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | - - - | - - - | 300 V | 90 a | 220 a | 1,4 V @ 15V, 20a | - - - | 87 NC | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | FFPF04U40DPTU | 0,2400 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 Full Pack | Standard | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 1.000 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar -Gemeinsamer -Anode | 400 V | 4a | 1,4 V @ 4 a | 45 ns | 10 µa @ 400 V | -65 ° C ~ 150 ° C. | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FDP8442-F085 | 1.2700 | ![]() | 750 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FDP8442-F085-600039 | 1 | N-Kanal | 40 v | 23a (TA), 80A (TC) | 10V | 3.1MOHM @ 80A, 10V | 4v @ 250 ähm | 235 NC @ 10 V | ± 20 V | 12200 PF @ 25 V. | - - - | 254W (TC) | |||||||||||||||||||||||||||||||||||||||||
![]() | MMBD1202 | - - - | ![]() | 6934 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBD12 | Standard | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0070 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 200 Ma | 4 ns | 25 na @ 100 v | 150 ° C (max) | 200 ma | - - - | ||||||||||||||||||||||||||||||||||||||||||
![]() | SFS9640 | 0,5100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 200 v | 6.2a (TC) | 10V | 500mohm @ 3.1a, 10 V. | 4v @ 250 ähm | 59 NC @ 10 V | ± 30 v | 1585 PF @ 25 V. | - - - | 40W (TC) | |||||||||||||||||||||||||||||||||||||||
![]() | HGT1S14N36G3VLT_NL | - - - | ![]() | 5266 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Logik | 100 w | I2pak (to-262) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 124 | 300 V, 7a, 28ohm, 5 V. | - - - | 390 v | 18 a | 2,2 V @ 5v, 14a | - - - | 24 NC | -/7µs | |||||||||||||||||||||||||||||||||||||||||
![]() | FQPF2N70 | 0,6300 | ![]() | 42 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 700 V | 2a (TC) | 10V | 6.3OHM @ 1a, 10V | 5 V @ 250 ähm | 11 NC @ 10 V | ± 30 v | 350 PF @ 25 V. | - - - | 28W (TC) | ||||||||||||||||||||||||||||||||||||||||||
![]() | MJD47TF-FS | 0,3400 | ![]() | 86 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MJD47 | 1,56 w | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 200 µA | Npn | 1v @ 200 Ma, 1a | 30 @ 300 mA, 10V | 10 MHz | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMA710PZ | - - - | ![]() | 8028 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | MOSFET (Metalloxid) | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.29.0095 | 1 | P-Kanal | 20 v | 7.8a (ta) | 1,8 V, 5 V. | 24MOHM @ 7.8a, 5V | 1,5 V @ 250 ähm | 42 NC @ 5 V | ± 8 v | 2015 PF @ 10 V | - - - | 900 MW (TA) | ||||||||||||||||||||||||||||||||||||||||||
![]() | HUF76429D3ST | 0,5300 | ![]() | 2959 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 404 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 23mohm @ 20a, 10V | 3v @ 250 ähm | 46 NC @ 10 V | ± 16 v | 1480 PF @ 25 V. | - - - | 110W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus