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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | BC32716ta | 0,0300 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||
![]() | UF4005 | 0,0900 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204Al, Do-41, axial | UF400 | Standard | Do-41 | Herunterladen | Ear99 | 8541.10.0080 | 3.386 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,7 V @ 1 a | 75 ns | 5 µa @ 600 V | -50 ° C ~ 175 ° C. | 1a | - - - | ||||||||||||||||||||||||||||||
![]() | BZX79C3V0 | 0,0200 | ![]() | 111 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | BZX79C3 | 500 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 50 µa @ 1 V | 3 v | 95 Ohm | |||||||||||||||||||||||||||||
![]() | BC548ATA | 0,0200 | ![]() | 4991 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2,432 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | ||||||||||||||||||||||||||||||
![]() | KSB772OS | 0,1000 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 250 | 30 v | 3 a | 1 µA (ICBO) | PNP | 500mv @ 200 Ma, 2a | 100 @ 1a, 2v | 80MHz | ||||||||||||||||||||||||||||||
![]() | MBR1645 | 1.0000 | ![]() | 1491 | 0.00000000 | Fairchild Semiconductor | SwitchMode ™ | Schüttgut | Aktiv | K. Loch | To-220-2 | MBR1645 | Schottky | To-220-2 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.10.0080 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 45 V | 630 mv @ 16 a | 1 ma @ 45 v | -65 ° C ~ 175 ° C. | 16a | 1400pf @ 5v, 1 MHz | ||||||||||||||||||||||||||||
![]() | BC857S | - - - | ![]() | 2842 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | BC857 | 300 MW | SC-88 (SC-70-6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 200 ma | 15NA (ICBO) | 2 PNP (Dual) | 650 mv @ 5ma, 100 mA | 125 @ 2MA, 5V | 200 MHz | |||||||||||||||||||||||||||
![]() | KSC838YBU | 0,0300 | ![]() | 1327 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 9.744 | 30 v | 30 ma | 100NA (ICBO) | Npn | 400mv @ 1ma, 10 mA | 120 @ 2MA, 12V | 250 MHz | ||||||||||||||||||||||||||||||
![]() | HUF75542S3S | 1.5900 | ![]() | 400 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 80 v | 75a (TC) | 10V | 14mohm @ 75a, 10V | 4v @ 250 ähm | 180 NC @ 20 V. | ± 20 V | 2750 PF @ 25 V. | - - - | 230W (TC) | ||||||||||||||||||||||||
![]() | BC557ata | 0,0400 | ![]() | 145 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7,322 | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||||||||||||
![]() | RS1DFA | 0,0700 | ![]() | 9184 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Aktiv | Oberflächenhalterung | SOD-123W | RS1D | Standard | SOD-123FA | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0080 | 658 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 1,3 V @ 800 mA | 150 ns | 5 µa @ 200 V. | -55 ° C ~ 150 ° C. | 800 mA | 10pf @ 4v, 1 MHz | |||||||||||||||||||||||||||
![]() | KSA614O | 1.0000 | ![]() | 8695 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 25 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 200 | 55 v | 3 a | 50 µA (ICBO) | PNP | 500mv @ 100 mA, 1a | 70 @ 500 mA, 5V | - - - | ||||||||||||||||||||||||||||||
![]() | FDP12N50NZ | - - - | ![]() | 9483 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 11,5a (TC) | 10V | 520MOHM @ 5.75A, 10V | 5 V @ 250 ähm | 30 NC @ 10 V | ± 25 V | 1235 PF @ 25 V. | - - - | 170W (TC) | |||||||||||||||||||||||||||
![]() | FDS7066ASN3 | 1.1900 | ![]() | 623 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 19a (ta) | 4,5 V, 10 V. | 4,8 MOHM @ 19A, 10V | 3V @ 1ma | 62 NC @ 10 V | ± 20 V | 2460 PF @ 15 V | - - - | 3W (TA) | ||||||||||||||||||||||||||
![]() | DFB2005 | 1.3600 | ![]() | 600 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-SIP, TS-6P | Standard | TS-6P | Herunterladen | Ear99 | 8541.10.0080 | 240 | 1,1 V @ 20 a | 10 µa @ 50 V | 20 a | Einphase | 50 v | |||||||||||||||||||||||||||||||||
![]() | BSR13 | 1.0000 | ![]() | 5723 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 500 mA | 30NA (ICBO) | Npn | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 250 MHz | ||||||||||||||||||||||||||||||
![]() | BC307CBU | 0,0200 | ![]() | 1289 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 629 | 45 V | 100 ma | 15na | PNP | 500 mV @ 5ma, 100 mA | 380 @ 2MA, 5V | 130 MHz | ||||||||||||||||||||||||||||||
![]() | ISL9R18120G2 | 1.0000 | ![]() | 2861 | 0.00000000 | Fairchild Semiconductor | Stealth ™ | Schüttgut | Aktiv | K. Loch | To-247-2 | Standard | To-247-2 | Herunterladen | Ear99 | 8542.39.0001 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1200 V | 3,3 V @ 18 a | 70 ns | 100 µA @ 1200 V | -55 ° C ~ 150 ° C. | 18a | - - - | |||||||||||||||||||||||||||||||
![]() | FLZ20VA | 1.0000 | ![]() | 8727 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 NA @ 15 V | 18,5 v | 23,5 Ohm | ||||||||||||||||||||||||||||||||
![]() | Mm3z4v7c | 0,0300 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1 V @ 10 mA | 2,7 µa @ 2 V | 4,7 v | 75 Ohm | |||||||||||||||||||||||||||||||||
![]() | FDS6670S | 0,9600 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 13,5a (TA) | 4,5 V, 10 V. | 9mohm @ 13.5a, 10V | 3V @ 1ma | 34 NC @ 5 V. | ± 20 V | 2674 PF @ 15 V | - - - | 1W (TA) | ||||||||||||||||||||||||
![]() | MPSA13 | - - - | ![]() | 2833 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 5.000 | 30 v | 500 mA | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | ||||||||||||||||||||||||||||||
![]() | 2N3906 | - - - | ![]() | 3505 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 2n39 | 625 MW | To-92 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 1 | 40 v | 200 ma | 50na | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | |||||||||||||||||||||||||||
![]() | Si4884dy | - - - | ![]() | 8699 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2.500 | ||||||||||||||||||||||||||||||||||||||||
![]() | 2SK4085LS-1E | 1.3000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C. | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220F-3Fs | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 11a (TC) | 430mohm @ 8a, 10V | 5v @ 1ma | 46.6 NC @ 10 V. | ± 30 v | 1200 PF @ 30 V | - - - | 2W (TA), 40W (TC) | |||||||||||||||||||||||||||
![]() | Fes10g | - - - | ![]() | 3076 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-277, 3-Powerdfn | Standard | To-277-3 | Herunterladen | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 400 V | 1,2 V @ 10 a | 30 ns | 5 µa @ 400 V | -55 ° C ~ 175 ° C. | 10a | 140pf @ 4v, 1 MHz | |||||||||||||||||||||||||||||||
![]() | SSD2025TF | - - - | ![]() | 4169 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SSD2025 | MOSFET (Metalloxid) | 2W | 8-soic | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 3.3a | 100MOHM @ 3.3a, 10V | 1V @ 250 ähm | 30nc @ 10v | - - - | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | FCPF7N60YDtu | 1.0100 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | MOSFET (Metalloxid) | To-220F-3 (Y-Forming) | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 7a (TC) | 10V | 600 MOHM @ 3,5A, 10 V. | 5 V @ 250 ähm | 30 NC @ 10 V | ± 30 v | 920 PF @ 25 V. | - - - | 31W (TC) | |||||||||||||||||||||||||||
![]() | S2K | - - - | ![]() | 4949 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214aa, SMB | Standard | SMB (Do-214AA) | Herunterladen | Ear99 | 8541.10.0080 | 2.185 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 800 V | 1,15 V @ 2 a | 1,5 µs | 5 µa @ 800 V | -50 ° C ~ 150 ° C. | 2a | - - - | |||||||||||||||||||||||||||||||
![]() | FDS2170N7 | 2.0100 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 200 v | 3a (ta) | 10V | 128mohm @ 3a, 10V | 4,5 V @ 250 ähm | 36 NC @ 10 V | ± 20 V | 1292 PF @ 100 V | - - - | 3W (TA) |
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