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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Geschwindigkeit | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | Mm3z4v3b | 0,0300 | ![]() | 179 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 2% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1 V @ 10 mA | 2,7 µa @ 1 V | 4.3 v | 84 Ohm | ||||||||||||||||||||||||||||||||||
![]() | GBPC1206 | 2.6000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | QC -terminal | 4 Quadratmeter, GBPC | Standard | GBPC | Herunterladen | Ear99 | 8541.10.0080 | 1 | 1,1 V @ 6 a | 5 µa @ 600 V | 12 a | Einphase | 600 V | ||||||||||||||||||||||||||||||||||
![]() | FJPF3305TU | 0,3000 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 30 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 400 V | 4 a | 1 µA (ICBO) | Npn | 1v @ 1a, 4a | 19 @ 1a, 5V | 4MHz | |||||||||||||||||||||||||||||||
![]() | 2n3906tar | - - - | ![]() | 2685 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 200 ma | - - - | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | ||||||||||||||||||||||||||||||||
![]() | KSD261CYBU | 0,0300 | ![]() | 3939 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 9.000 | 20 v | 500 mA | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 120 @ 100 mA, 1V | - - - | |||||||||||||||||||||||||||||||
![]() | 2n5210tf | 0,0200 | ![]() | 57 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 50 v | 100 ma | 50na (ICBO) | Npn | 700 mv @ 1ma, 10 mA | 200 @ 100 µA, 5V | 30 MHz | |||||||||||||||||||||||||||||||
![]() | FJN3304RBU | 0,0200 | ![]() | 54 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | Fjn330 | 300 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 250 MHz | 47 Kohms | 47 Kohms | |||||||||||||||||||||||||||||
![]() | BZX79C24 | 0,0200 | ![]() | 31 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 50 Na @ 16,8 V. | 24 v | 70 Ohm | |||||||||||||||||||||||||||||||
![]() | KSD1616GBU | 0,0500 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 50 v | 1 a | 100NA (ICBO) | Npn | 300 mV @ 50 Ma, 1a | 200 @ 100 Ma, 2V | 160 MHz | |||||||||||||||||||||||||||||||
![]() | MPSA12 | 0,0500 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 5.000 | 20 v | 100NA (ICBO) | NPN - Darlington | 1 V @ 10 µA, 10 mA | 20000 @ 10ma, 5V | - - - | ||||||||||||||||||||||||||||||||
![]() | FSV330AF | 0,1200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214AD, SMAF | Schottky | Do-214AD (SMAF) | Herunterladen | Ear99 | 8542.39.0001 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 30 v | 500 mV @ 3 a | 12,5 ns | 100 µa @ 30 V | -55 ° C ~ 150 ° C. | 3a | 485PF @ 0V, 1 MHz | ||||||||||||||||||||||||||||||||
![]() | FMBS549 | 0,0400 | ![]() | 6326 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | 700 MW | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 5 | 30 v | 1 a | 100NA (ICBO) | PNP | 750 MV @ 200ma, 2a | 100 @ 500 mA, 2V | 100 MHz | |||||||||||||||||||||||||||||||
![]() | FCD900N60Z | 0,7800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8541.29.0095 | 385 | N-Kanal | 600 V | 4,5a (TC) | 10V | 900mohm @ 2,3a, 10 V | 3,5 V @ 250 ähm | 17 NC @ 10 V | ± 20 V | 720 PF @ 25 V. | - - - | 52W (TC) | ||||||||||||||||||||||||||||
![]() | DF02s | 1.0000 | ![]() | 7019 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 4-smd, Möwenflügel | Standard | Df-s | Herunterladen | Ear99 | 8541.10.0080 | 1 | 1,1 V @ 1,5 a | 10 µA @ 200 V. | 1 a | Einphase | 200 v | ||||||||||||||||||||||||||||||||||
![]() | FDB3672-F085 | 1.0000 | ![]() | 9590 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 7.2a (TA), 44a (TC) | 6 V, 10V | 28mohm @ 44a, 10V | 4v @ 250 ähm | 31 NC @ 10 V | ± 20 V | 1710 PF @ 25 V | - - - | 120W (TC) | ||||||||||||||||||||||||||||
![]() | HUFA76407P3 | 0,3300 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 13a (TC) | 4,5 V, 10 V. | 92mohm @ 13a, 10V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | |||||||||||||||||||||||||||
![]() | FDS6064N7 | 0,8100 | ![]() | 6598 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 310 | N-Kanal | 20 v | 23a (ta) | 1,8 V, 4,5 V. | 3,5 MOHM @ 23A, 4,5 V. | 1,5 V @ 250 ähm | 98 NC @ 4,5 V. | ± 8 v | 7191 PF @ 10 V | - - - | 3W (TA) | |||||||||||||||||||||||||||
![]() | 2N3906ta | 1.0000 | ![]() | 3314 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 200 ma | - - - | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | ||||||||||||||||||||||||||||||||
![]() | FJAF6810ATU | - - - | ![]() | 4768 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | 60 w | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | 750 V | 10 a | 1ma | Npn | 3v @ 1,5a, 6a | 5 @ 6a, 5V | - - - | |||||||||||||||||||||||||||||||
![]() | FQL40N50F | - - - | ![]() | 2298 | 0.00000000 | Fairchild Semiconductor | FRFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | MOSFET (Metalloxid) | HPM F2 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 40a (TC) | 10V | 110MOHM @ 20A, 10V | 5 V @ 250 ähm | 200 nc @ 10 v | ± 30 v | 7500 PF @ 25 V. | - - - | 460W (TC) | ||||||||||||||||||||||||||||
![]() | KSP13TA | 1.0000 | ![]() | 9872 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | 0000.00.0000 | 1 | 30 v | 500 mA | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | |||||||||||||||||||||||||||||||||
![]() | IRL620A | 0,3300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 5a (TC) | 5v | 800 MOHM @ 2,5A, 5V | 2v @ 250 ähm | 15 NC @ 5 V | ± 20 V | 430 PF @ 25 V. | - - - | 39W (TC) | |||||||||||||||||||||||||
![]() | Fjn5471ta | 0,0200 | ![]() | 1678 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 327 | 20 v | 5 a | 100NA (ICBO) | Npn | 500mv @ 100 mA, 3a | 700 @ 500 mA, 2 V | 150 MHz | |||||||||||||||||||||||||||||||
![]() | KSA916YTA | 0,0900 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | 900 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 3.845 | 120 v | 800 mA | 100NA (ICBO) | PNP | 1v @ 50 mA, 500 mA | 100 @ 100 Ma, 5V | 120 MHz | ||||||||||||||||||||||||||||||||
![]() | FDH600 | 0,7000 | ![]() | 31 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0070 | 2.000 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 50 v | 1 V @ 200 Ma | 4 ns | 100 na @ 50 V | 175 ° C (max) | 200 ma | 2.5PF @ 0V, 1 MHz | |||||||||||||||||||||||||||||||
![]() | BC849CMTF | 0,0200 | ![]() | 130 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||||||
![]() | BC32716ta | 0,0300 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||
![]() | UF4005 | 0,0900 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204Al, Do-41, axial | UF400 | Standard | Do-41 | Herunterladen | Ear99 | 8541.10.0080 | 3.386 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 1,7 V @ 1 a | 75 ns | 5 µa @ 600 V | -50 ° C ~ 175 ° C. | 1a | - - - | |||||||||||||||||||||||||||||||
![]() | BZX79C3V0 | 0,0200 | ![]() | 111 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | BZX79C3 | 500 MW | Do-35 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 50 µa @ 1 V | 3 v | 95 Ohm | ||||||||||||||||||||||||||||||
![]() | BC548ATA | 0,0200 | ![]() | 4991 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2,432 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz |
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