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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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![]() | 2N5401_D28Z | 1.0000 | ![]() | 2181 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | - - - | Nicht Anwendbar | Ear99 | 8541.21.0075 | 2.000 | 150 v | 600 mA | 50na (ICBO) | PNP | 500mv @ 5ma, 50 mA | 60 @ 10ma, 5V | 400 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | KSP24TA | 0,0200 | ![]() | 9807 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 135 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.407 | 30 v | 100 ma | 50na (ICBO) | Npn | - - - | 30 @ 8ma, 10V | 620 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | 1N4744A-T50A | - - - | ![]() | 6004 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | Do-41 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-1n4744a-T50A-600039 | 1 | 5 µa @ 11,4 V | 15 v | 14 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | FFB3904 | 0,0800 | ![]() | 423 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | Ffb39 | 300 MW | SC-88 (SC-70-6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 40V | 200 ma | - - - | 2 NPN (Dual) | 300mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | |||||||||||||||||||||||||||||||||||
![]() | 2SA1699E-PM-AA | 0,5300 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | Verkäfer undefiniert | 2156-2SA1699E-PM-AA-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NDP4050 | 0,4800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Verkäfer undefiniert | Verkäfer undefiniert | 2156P4050-600039 | 1 | N-Kanal | 50 v | 15a (TC) | 100mohm @ 7,5a, 10 V | 4v @ 250 ähm | 17 NC @ 10 V | 450 PF @ 25 V. | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FMG1G75US60H | 39.0100 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr-Ga | 310 w | Standard | 19 Uhr-Ga | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 15 | Einzel | - - - | 600 V | 75 a | 2,8 V @ 15V, 75a | 250 µA | NEIN | 7.056 NF @ 30 V | ||||||||||||||||||||||||||||||||||||
![]() | FQI50N06TU | 0,7300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 50a (TC) | 10V | 22mohm @ 25a, 10V | 4v @ 250 ähm | 41 nc @ 10 v | ± 25 V | 1540 PF @ 25 V. | - - - | 3,75W (TA), 120W (TC) | |||||||||||||||||||||||||||||||||||
![]() | RF3S49092SM9A | 2.8100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-6, d²pak (5 Leads + Tab), to-263ba | RF3S49092 | MOSFET (Metalloxid) | 50W (TC) | To-263-5 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N und p-kanal | 12V | 20A (TC), 10a (TC) | 60MOHM @ 20A, 5V, 140MOHM @ 10A, 5V | 1V @ 250 ähm | 25nc @ 10v, 24nc @ 10v | 750pf @ 10v, 775PF @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||||||||
![]() | Bax16 | 0,0300 | ![]() | 73 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0070 | 8.663 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 150 v | 650 mv @ 1 mA | 120 ns | 100 NA @ 150 V | 175 ° C (max) | 200 ma | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | MMBD1401A | 0,0300 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Standard | SOT-23-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 175 v | 1 V @ 200 Ma | 50 ns | 100 na @ 175 V | 150 ° C (max) | 200 ma | 2PF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FQP5N60C | 0,7200 | ![]() | 74 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 417 | N-Kanal | 600 V | 4,5a (TC) | 10V | 2,5OHM @ 2,25a, 10 V. | 4v @ 250 ähm | 19 NC @ 10 V | ± 30 v | 670 PF @ 25 V. | - - - | 100 W (TC) | |||||||||||||||||||||||||||||||||||
![]() | HUFA76413D3ST | 0,2800 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 49mohm @ 20a, 10V | 3v @ 250 ähm | 20 nc @ 10 v | ± 16 v | 645 PF @ 25 V. | - - - | 60 W (TC) | ||||||||||||||||||||||||||||||||||
![]() | KST4126MTF | 0,0200 | ![]() | 89 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 25 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 250 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | HUF75842S3 | 1,5000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | HUF75842 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | |||||||||||||||||||||||||||||||||||||||||||||
2SA1507T | 0,3200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,5 w | To-225-3 | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0075 | 200 | 160 v | 1,5 a | 1 µA (ICBO) | PNP | 450 MV @ 50 Ma, 500 mA | 200 @ 100ma, 5V | 120 MHz | |||||||||||||||||||||||||||||||||||||||
![]() | 2SA1708T-AN | - - - | ![]() | 8379 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | SC-71 | 1 w | 3-nmp | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-2SA1708T-AN-600039 | 1 | 100 v | 1 a | 100na | PNP | 600mv @ 40 mA, 400 mA | 200 @ 100ma, 5V | 120 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | BD17510stu | - - - | ![]() | 3315 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 30 w | To-126-3 | Herunterladen | Ear99 | 8541.29.0095 | 553 | 45 V | 3 a | 100 µA (ICBO) | Npn | 800mv @ 100 mA, 1a | 63 @ 150 mA, 2V | 3MHz | |||||||||||||||||||||||||||||||||||||||
![]() | 1N5228BTR | 0,0200 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 1N5228 | 500 MW | Do-35 | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 10 µa @ 1 V | 3,9 v | 23 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | KSA643CYTA | 0,0400 | ![]() | 6054 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.850 | 20 v | 500 mA | 200na (ICBO) | PNP | 400 mv @ 50 mA, 500 mA | 120 @ 100 mA, 1V | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FDH210N08 | - - - | ![]() | 5855 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 75 V | - - - | 10V | - - - | - - - | ± 20 V | - - - | 462W (TC) | |||||||||||||||||||||||||||||||||||||
![]() | Bas21ht1g | - - - | ![]() | 4608 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Bas21 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 2156-Bas21HT1G-600039 | Ear99 | 8541.10.0070 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | SS9012GBU | 0,0200 | ![]() | 318 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 20 v | 500 mA | 100NA (ICBO) | PNP | 600mv @ 50 mA, 500 mA | 64 @ 50 Ma, 1V | - - - | ||||||||||||||||||||||||||||||||||||
![]() | KSA733CYBU | - - - | ![]() | 3933 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 50 v | 150 Ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 120 @ 1ma, 6v | 180 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FQD1N50TM | 0,5300 | ![]() | 241 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 500 V | 1.1a (TC) | 10V | 9OHM @ 550 mA, 10V | 5 V @ 250 ähm | 5,5 NC @ 10 V. | ± 30 v | 150 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | ||||||||||||||||||||||||||||||||||
![]() | FDD5810 | 0,9000 | ![]() | 540 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 7.4a (TA), 37a (TC) | 5v, 10V | 22mohm @ 32a, 10V | 2v @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1890 PF @ 25 V. | - - - | 72W (TC) | ||||||||||||||||||||||||||||||||||
![]() | DBG150G | 3.9000 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | 4-sip, dbf | Standard | - - - | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 250 | 900 mV @ 7,5 a | 10 µa @ 600 V | 3.6 a | Einphase | 600 V | ||||||||||||||||||||||||||||||||||||||||
![]() | 3n255 | 0,2500 | ![]() | 5782 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4-sip, kbpm | Standard | Kbpm | Herunterladen | ROHS3 -KONFORM | 2156-3N255-FS | Ear99 | 8541.10.0080 | 30 | 1,1 V @ 3.14 a | 5 µa @ 200 V. | 2 a | Einphase | 200 v | |||||||||||||||||||||||||||||||||||||||
![]() | 3n246 | 0,2200 | ![]() | 8906 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 165 ° C (TJ) | K. Loch | 4-sip, kbpm | Standard | Kbpm | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 112 | 1 V @ 1 a | 5 µa @ 50 V | 1,5 a | Einphase | 50 v | ||||||||||||||||||||||||||||||||||||||||
![]() | KSC1393YBU | 0,0200 | ![]() | 879 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 20 dB ~ 24 dB | 30V | 20 ma | Npn | 90 @ 2MA, 10V | 700 MHz | 2db ~ 3db @ 200 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus